| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links  |
| Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. |
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE |
1999 |
Physica: B : condensed matter
T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA |
273-4 |
5 |
UA library record; WoS full record; WoS citing articles |
| Geim, A.K.; Grigorieva, I.V.; Dubonos, S.V.; Lok, J.G.S.; Maan, J.C.; Filippov, A.E.; Peeters, F.M.; Deo, P.S. |
Mesoscopic superconductors as 'artificial atoms' made from Cooper pairs |
1998 |
Physica: B : condensed matter |
249/251 |
4 |
UA library record; WoS full record; WoS citing articles |
| van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs |
1995 |
Physica: B : condensed matter |
211 |
2 |
UA library record; WoS full record; WoS citing articles |
