| Records |
| Author |
Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. |
| Title |
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE |
Type |
A1 Journal article |
| Year |
1999 |
Publication |
Physica: B : condensed matter
T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA |
Abbreviated Journal |
Physica B |
| Volume |
273-4 |
Issue |
|
Pages |
140-143 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
000084452200031 |
Publication Date |
2002-07-26 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0921-4526; |
ISBN |
|
Additional Links  |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.386 |
Times cited |
5 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.386; 1999 IF: 0.725 |
| Call Number |
UA @ lucian @ c:irua:102892 |
Serial |
2925 |
| Permanent link to this record |
| |
|
| |
| Author |
Geim, A.K.; Grigorieva, I.V.; Dubonos, S.V.; Lok, J.G.S.; Maan, J.C.; Filippov, A.E.; Peeters, F.M.; Deo, P.S. |
| Title |
Mesoscopic superconductors as 'artificial atoms' made from Cooper pairs |
Type |
A1 Journal article |
| Year |
1998 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
| Volume |
249/251 |
Issue |
|
Pages |
445-452 |
| Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
000074919400095 |
Publication Date |
0000-00-00 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0921-4526 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.386 |
Times cited |
4 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.386; 1998 IF: 0.619 |
| Call Number |
UA @ lucian @ c:irua:24180 |
Serial |
2003 |
| Permanent link to this record |
| |
|
| |
| Author |
van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
| Title |
Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs |
Type |
A1 Journal article |
| Year |
1995 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
| Volume |
211 |
Issue |
|
Pages |
455-457 |
| Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
A1995RD54400118 |
Publication Date |
0000-00-00 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0921-4526 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.319 |
Times cited |
2 |
Open Access |
|
| Notes |
|
Approved |
no |
| Call Number |
UA @ lucian @ c:irua:13038 |
Serial |
600 |
| Permanent link to this record |
