Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C. |
High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs |
1999 |
Journal of applied physics |
85 |
6 |
UA library record; WoS full record; WoS citing articles |
Dobrynin, A.N.; Temst, K.; Lievens, P.; Margueritat, J.; Gonzalo, J.; Afonso, C.N.; Piscopiello, E.; Van Tendeloo, G. |
Observation of Co/CoO nanoparticles below the critical size for exchange bias |
2007 |
Journal of applied physics |
101 |
27 |
UA library record; WoS full record; WoS citing articles |
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. |
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques |
2002 |
Journal of applied physics |
91 |
27 |
UA library record; WoS full record; WoS citing articles |
Tadić, M.; Peeters, F.M.; Janssens, K.L.; Korkusinski, M.; Hawrylak, P. |
Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots |
2002 |
Journal of applied physics |
92 |
73 |
UA library record; WoS full record; WoS citing articles |
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
2001 |
Journal of applied physics |
90 |
97 |
UA library record; WoS full record; WoS citing articles |
Cornelissens, Y.G.; Peeters, F.M. |
Response function of a Hall magnetosensor in the diffusive regime |
2002 |
Journal of applied physics |
92 |
24 |
UA library record; WoS full record; WoS citing articles |
Papp, G.; Borza, S.; Peeters, F.M. |
Spin transport in a Mn-doped ZnSe asymmetric tunnel structure |
2005 |
Journal of applied physics |
97 |
26 |
UA library record; WoS full record; WoS citing articles |
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Rethfeld, B.; Bogaerts, A. |
Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions |
2012 |
Journal of applied physics |
111 |
30 |
UA library record; WoS full record; WoS citing articles |
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
Zhang, M.-L.; March, N.H.; Peeters, A.; van Alsenoy, C.; Howard, I.; Lamoen, D.; Leys, F. |
Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics |
2003 |
Journal Of Applied Physics |
93 |
|
UA library record; WoS full record; |
Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. |
Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures |
1999 |
Journal Of Applied Physics |
85 |
16 |
UA library record; WoS full record; WoS citing articles |
Milants, K.; Verheyden, J.; Barancira, T.; Deweerd, W.; Pattyn, H.; Bukshpan, S.; Williamson, D.L.; Vermeiren, F.; Van Tendeloo, G.; Vlekken, C.; Libbrecht, S.; van Haesendonck, C. |
Size distribution and magnetic behavior of lead inclusions in silicon single crystals |
1997 |
Journal of applied physics |
81 |
8 |
UA library record; WoS full record; WoS citing articles |
Chu, D.P.; Peeters, F.M.; Kolodinski, S.; Roca, E. |
Theoretical investigation of CoSi2/Si1-xGex detectors: influence of a Si tunneling barrier on the electro-optical characteristics |
1996 |
Journal of applied physics |
79 |
3 |
UA library record; WoS full record; WoS citing articles |