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“Phase transitions in thin mesoscopic superconducting disks”. Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 57, 13817 (1998). http://doi.org/10.1103/PhysRevB.57.13817
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 200
DOI: 10.1103/PhysRevB.57.13817
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“Phonon-assisted Zener tunneling in a cylindrical nanowire transistor”. Carrillo-Nuñez H, Magnus W, Vandenberghe WG, Sorée B, Peeters FM, Journal of applied physics 113, 184507 (2013). http://doi.org/10.1063/1.4803715
Abstract: The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrodinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored. (C) 2013 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 4
DOI: 10.1063/1.4803715
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“Phonon-assisted Zener tunneling in a p-n diode silicon nanowire”. Carrillo-Nunez H, Magnus W, Vandenberghe WG, Sorée B, Peeters FM, Solid state electronics 79, 196 (2013). http://doi.org/10.1016/j.sse.2012.09.004
Abstract: The Zener tunneling current flowing through a biased, abrupt p-n junction embedded in a cylindrical silicon nanowire is calculated. As the band gap becomes indirect for sufficiently thick wires, Zener tunneling and its related transitions between the valence and conduction bands are mediated by short-wavelength phonons interacting with mobile electrons. Therefore, not only the high electric field governing the electrons in the space-charge region but also the transverse acoustic (TA) and transverse optical (TO) phonons have to be incorporated in the expression for the tunneling current. The latter is also affected by carrier confinement in the radial direction and therefore we have solved the Schrodinger and Poisson equations self-consistently within the effective mass approximation for both conduction and valence band electrons. We predict that the tunneling current exhibits a pronounced dependence on the wire radius, particularly in the high-bias regime. (C) 2012 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2012.09.004
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“Phonon band structure of Si nanowires: a stability analysis”. Peelaers H, Partoens B, Peeters FM, Nano letters 9, 107 (2009). http://doi.org/10.1021/nl802613p
Abstract: We present full ab initio calculations of the phonon band structure of thin Si nanowires oriented along the [110] direction. Using these phonon dispersion relations, we investigate the structural stability of these wires. We found that all studied wires were stable also when doped with either B or P, if the unit cell was taken sufficiently large along the wire axis. The evolution of the phonon dispersion relations and of the sound velocities with respect to the wire diameters is discussed. Softening is observed for acoustic modes and hardening for optical phonon modes with increasing wire diameters.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 12.712
Times cited: 51
DOI: 10.1021/nl802613p
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“Phonon band structures of Si nanowires”. Peelaers H, Partoens B, Peeters FM, AIP conference proceedings 1199, 323 (2009). http://doi.org/10.1063/1.3295432
Abstract: We present full ab initio calculations of the phonon band structure of thin Si nanowires oriented along the [110] direction. Using these phonon dispersion relations we investigate the structural stability of these wires. We found that all studied wires were stable also when doped with either B or P, if the unit cell was taken sufficiently large along the wire axis. The evolution of the phonon dispersion relations and of the sound velocities with respect to the wire diameters is discussed. Softening is observed for acoustic modes and hardening for optical phonon modes with increasing wire diameters.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1063/1.3295432
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“Phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride”. Michel KH, Verberck B, Physical review : B : condensed matter and materials physics 83, 115328 (2011). http://doi.org/10.1103/PhysRevB.83.115328
Abstract: A unified theory of phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride (h-BN) is derived. The dynamical matrix is calculated on the basis of an empirical force constant model of intralayer valence and interlayer van der Waals interactions. Coulomb interactions are calculated by Ewalds method, adapted for the three-dimensional (3D) and the multilayer case. The deformation of the ionic charge distribution with long-wave lattice displacements is taken into account. Special attention is devoted to the nonanalytic long-range Coulomb contribution to the dynamical matrix which is different for the 3D crystal and the multilayer case. Consequently there is a splitting of the transverse optical (TO) and longitudinal optical (LO) phonon branches of E1u symmetry and a discontinuity of the A2u branch at the Γ point in 3D h-BN. No such splitting and discontinuity at Γ are present in multilayer crystals with a finite number N of layers. There a diverging bundle of N overbending optical phonon branches emerges from Γ. Borns long-wave theory is applied and extended for the study of piezoelectricity in layered crystals. While 3D h-BN and h-BN multilayers with an even number of layers (symmetry D6h) are not piezoelectric, multilayers with an uneven number of Nu layers (symmetry D3h) are piezoelectric; the piezoelectric coefficient e1,11 is inversely proportional to Nu.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 82
DOI: 10.1103/PhysRevB.83.115328
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“Hematite iron oxide nanorod patterning inside COK-12 mesochannels as an efficient visible light photocatalyst”. Wee LH, Meledina M, Turner S, Custers K, Kerkhofs S, Van Tendeloo G, Martens JA, Journal of materials chemistry A : materials for energy and sustainability 3, 19884 (2015). http://doi.org/10.1039/C5TA05075H
Abstract: The uniform dispersion of functional oxide nanoparticles on the walls of ordered mesoporous silica to tailor optical, electronic, and magnetic properties for biomedical and environmental applications is a scientific challenge. Here, we demonstrate homogeneous confined growth of 5 nanometer-sized hematite iron oxide (α-Fe2O3) inside mesochannels of ordered mesoporous COK-12 nanoplates. The three-dimensional inclusion of the α-Fe2O3 nanorods in COK-12 particles is studied using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM), energy-dispersive X-ray (EDX) spectroscopy and electron tomography. High resolution imaging and EDX spectroscopy provide information about the particle size, shape and crystal phase of the loaded α-Fe2O3 material, while electron tomography provides detailed information on the spreading of the nanorods throughout the COK-12 host. This nanocomposite material, having a semiconductor band gap energy of 2.40 eV according to diffuse reflectance spectroscopy, demonstrates an improved visible light photocatalytic degradation activity with rhodamine 6G and 1-adamantanol model compounds.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 8.867
Times cited: 9
DOI: 10.1039/C5TA05075H
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“Phonon-induced pure dephasing in exciton-biexciton quantum dot systems driven by ultrafast laser pulse sequences”. Axt VM, Kuhn T, Vagov A, Peeters FM, Physical review : B : condensed matter and materials physics 72, 125309 (2005). http://doi.org/10.1103/PhysRevB.72.125309
Abstract: A semiconductor quantum dot model accounting for single exciton as well as biexciton states coupled to phonons and laser light is investigated in the limit of strong electronic confinement. For an arbitrary sequence of excitations with ultrafast pulses analytical solutions are obtained for all density-matrix elements. The results are nonperturbative with respect to both the carrier-phonon and the carrier-light coupling. Numerical results for a single pulse excitation are presented illustrating spectral features of our solution as well as pulse area and temperature dependences.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 48
DOI: 10.1103/PhysRevB.72.125309
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“Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2”. Horzum S, Sahin H, Cahangirov S, Cudazzo P, Rubio A, Serin T, Peeters FM, Physical review : B : condensed matter and materials physics 87, 125415 (2013). http://doi.org/10.1103/PhysRevB.87.125415
Abstract: Motivated by recent experimental observations of Tongay et al. [Nano Lett. 12, 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain. We found that with increasing strain: (1) the E' and E '' Raman peaks (E-2g and E-1g in bulk) exhibit significant redshifts (up to similar to 30 cm(-1)), (2) the position of the A'(1) peak remains at similar to 180 cm(-1) (A(1g) in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear, and (4) the electronic band structure undergoes a direct to indirect band gap crossover under similar to 3% biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational, and optical properties of single layer MoSe2 and similar MX2 dichalcogenides. DOI:10.1103/PhysRevB.87.125415
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 171
DOI: 10.1103/PhysRevB.87.125415
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“Phonons in Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 95, 122110 (2009). http://doi.org/10.1063/1.3236526
Abstract: The phonon spectra of thin freestanding, hydrogen passivated, Ge nanowires are calculated by ab initio techniques. The effect of confinement on the phonon modes as caused by the small diameters of the wires is investigated. Confinement causes a hardening of the optical modes and a softening of the longitudinal acoustic modes. The stability of the nanowires, undoped or doped with B or P atoms, is investigated using the obtained phonon spectra. All considered wires were stable, except for highly doped, very thin nanowires.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.3236526
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“Photo-excited carriers and optical conductance and transmission in graphene in the presence of phonon scattering”. Dong HM, Xu W, Zhang J, Peeters FM, Vasilopoulos P, Physica. E: Low-dimensional systems and nanostructures 42, 748 (2010). http://doi.org/10.1016/j.physe.2009.11.048
Abstract: We present a theoretical study of the optoelectronic properties of monolayer graphene. Including the effect of the electron-photon-phonon scattering, we employ the mass- and energy-balance equations derived from the Boltzmann equation to evaluate self-consistently the carrier densities, optical conductance and transmission coefficient in graphene in the presence of linearly polarized radiation field. We find that the photo-excited carrier density can be increased under infrared radiation and depend strongly on radiation intensity and frequency. For short wavelengths (lambda <3 mu m), the universal optical conductance sigma(0) = e(2)/4h is obtained and the light transmittance is about 0.97-0.98. Interestingly, there is an optical absorption window in the range 4-100 mu m which is induced by different transition energies required for inter- and intra-band optical absorption. The position and width of this absorption window depend sensitively on temperature and carrier density of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 7
DOI: 10.1016/j.physe.2009.11.048
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“Photocatalytic acetaldehyde oxidation in air using spacious TiO2 films prepared by atomic layer deposition on supported carbonaceous sacrificial templates”. Verbruggen SW, Deng S, Kurttepeli M, Cott DJ, Vereecken PM, Bals S, Martens JA, Detavernier C, Lenaerts S, Applied catalysis : B : environmental 160, 204 (2014). http://doi.org/10.1016/j.apcatb.2014.05.029
Abstract: Supported carbon nanosheets and carbon nanotubes served as sacrificial templates for preparing spacious TiO2 photocatalytic thin films. Amorphous TiO2 was deposited conformally on the carbonaceous template material by atomic layer deposition (ALD). Upon calcination at 550 °C, the carbon template was oxidatively removed and the as-deposited continuous amorphous TiO2 layers transformed into interlinked anatase nanoparticles with an overall morphology commensurate to the original template structure. The effect of type of template, number of ALD cycles and gas residence time of pollutant on the photocatalytic activity, as well as the stability of the photocatalytic performance of these thin films was investigated. The TiO2 films exhibited excellent photocatalytic activity toward photocatalytic degradation of acetaldehyde in air as a model reaction for photocatalytic indoor air pollution abatement. Optimized films outperformed a reference film of commercial PC500.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Sustainable Energy, Air and Water Technology (DuEL)
Impact Factor: 9.446
Times cited: 37
DOI: 10.1016/j.apcatb.2014.05.029
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“Photocatalytic process optimisation for ethylene oxidation”. Tytgat T, Hauchecorne B, Abakumov AM, Smits M, Verbruggen SW, Lenaerts S, Chemical engineering journal 209, 494 (2012). http://doi.org/10.1016/j.cej.2012.08.032
Abstract: When studying photocatalysis it is important to consider, beside the chemical approach, the engineering part related to process optimisation. To achieve this a fixed bed photocatalytic set-up consisting of different catalyst placings, in order to vary catalyst distribution, is studied. The use of a fixed quantity of catalyst placed packed or randomly distributed in the reactor, results in an almost double degradation for the distributed catalyst. Applying this knowledge leads to an improved performance with limited use of catalyst. A reactor only half filled with catalyst leads to higher degradation performance compared to a completely filled reactor. Taking into account this simple process optimisation by better distributing the catalyst a more sustainable photocatalytic air purification process is achieved. (C) 2012 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Sustainable Energy, Air and Water Technology (DuEL)
Impact Factor: 6.216
Times cited: 12
DOI: 10.1016/j.cej.2012.08.032
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“Photoconductivity of nanocrystalline SnO2 sensitized with colloidal CdSe quantum dots”. Vasiliev RB, Babynina AV, Maslova OA, Rumyantseva MN, Ryabova LI, Dobrovolsky AA, Drozdov KA, Khokhlov DR, Abakumov AM, Gaskov AM, Journal of materials chemistry C : materials for optical and electronic devices 1, 1005 (2013). http://doi.org/10.1039/c2tc00236a
Abstract: A highly reproducible photoresponse is observed in nanocrystalline SnO2 thick films sensitized with CdSe quantum dots. The effect of the SnO2 matrix microstructure on the photoconductivity kinetics and photoresponse amplitude is demonstrated. The photoresponse of the sensitized SnO2 thick films reaches more than two orders of magnitude under illumination with the wavelength of the excitonic transition of the quantum dots. Long-term photoconductivity kinetics and photoresponse dependence on illumination intensity reveal power-law behavior inherent to the disordered nature of SnO2. The photoconductivity of the samples rises with the coarsening of the granular structure of the SnO2 matrix. At the saturation region, the photoresponse amplitude remains stable under 10(4) pulses of illumination switching, demonstrating a remarkably high stability.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.256
Times cited: 13
DOI: 10.1039/c2tc00236a
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“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
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“Photoemission study of CF4 rf-plasma treated multi-wall carbon nanotubes”. Felten A, Ghijsen J, Pireaux J-J, Whelan CM, Liang D, Van Tendeloo G, Bittencourt C, Carbon 46, 1271 (2008). http://doi.org/10.1016/j.carbon.2008.04.027
Abstract: Multi-wall carbon nanotubes (MWCNTs) were exposed to a CF4 rf-plasma. X-ray photoelectron spectroscopy analysis shows that the treatment effectively grafts fluorine atoms onto the MWCNTs. The fluorine atomic concentration and the nature of the CF bond (semi-ionic or covalent) can be tuned by varying the exposure time. Ultraviolet photoelectron spectroscopy analysis confirms that the valence electronic states are altered by the grafting of fluorine atoms. Characterization with high-resolution transmission electron microscopy reveals that while the plasma treatment does not induce significant etching impact on the CNT-surface, it does increase the number of active sites for gold cluster formation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.337
Times cited: 21
DOI: 10.1016/j.carbon.2008.04.027
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“Photographic materials”. Verlinden G, Gijbels R, Geuens I Surface Spectra IM, Chichester, page 727 (2001).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Photoluminescence of negatively charged excitons in high magnetic fields”. Hayne M, Jones CL, Bogaerts R, Riva C, Usher A, Peeters FM, Herlach F, Moshchalkov VV, Henini M, Physical review : B : condensed matter and materials physics 59, 2927 (1999). http://doi.org/10.1103/PhysRevB.59.2927
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 86
DOI: 10.1103/PhysRevB.59.2927
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“Photovoltaic effect and evidence of carrier multiplication in graphene vertical homojunctions with asymmetrical metal contacts”. Chen JJ, Wang Q, Meng J, Ke X, Van Tendeloo G, Bie YQ, Liu J, Liu K, Liao ZM, Sun D, Yu D;, ACS nano 9, 8851 (2015). http://doi.org/10.1021/acsnano.5b02356
Abstract: Graphene exhibits exciting potentials for high-speed wideband photodetection and high quantum efficiency solar energy harvest because of its broad spectral absorption, fast photoelectric response, and potential carrier multiplication. Although photocurrent can be generated near a metalgraphene interface in lateral devices, the photoactive area is usually limited to a tiny one-dimensional line-like interface region. Here, we report photoelectric devices based on vertical graphene two-dimensional homojunction, which is fabricated via vertically stacking four graphene monolayers with asymmetric metal contacts. The devices show excellent photovoltaic output with excitation wavelength ranging from visible light to mid-infrared. The wavelength dependence of the internal quantum efficiency gives direct evidence of the carrier multiplication effect in graphene. The simple fabrication process, easy scale-up, large photoresponsive active area, and broadband response of the vertical graphene device are very promising for practical applications in optoelectronics and photovoltaics.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 13.942
Times cited: 11
DOI: 10.1021/acsnano.5b02356
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“Physical limits on atomic resolution”. van Dyck D, Van Aert S, den Dekker AJ, Microscopy and microanalysis 10, 153 (2004). http://doi.org/10.1017/S143192760404036X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
Times cited: 14
DOI: 10.1017/S143192760404036X
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“Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers”. Zhang Y, Fischetti MV, Sorée B, Magnus W, Heyns M, Meuris M, Journal of applied physics 106, 083704 (2009). http://doi.org/10.1063/1.3245327
Abstract: We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k·p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent methodmaking use of a nonuniform spatial mesh and of the Broyden second methodto solve the coupled envelope-wave function k·p and Poisson equations. The hole mobility is computed using the KuboGreenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high- insulator, to Coulomb scattering interface traps or oxide chargesignored in our calculationsand to different channel structures employed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 29
DOI: 10.1063/1.3245327
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“Physicochemical and structural characterization of mesoporous aluminosilicates synthesized from leached saponite with additional aluminum incorporation”. Linssen T, Cassiers K, Cool P, Lebedev O, Whittaker A, Vansant EF, Chemistry of materials 15, 4863 (2003). http://doi.org/10.1021/cm031111a
Abstract: A thorough investigation was performed on the physical (mechanical, thermal, and hydrothermal stability) and chemical (ion exchange capacity and silanol number) characteristics of aluminosilicate FSMs, synthesized via a new successful short-time synthesis route using leached saponite and a low concentration of CTAB. Moreover, the influence of an additional Al incorporation, utilizing different aluminum sources, on the structure of the FSM derived from saponite is studied. A mesoporous aluminosilicate with a low Si/Al ratio of 12.8 is synthesized, and still has a very large surface area of 1130 m(2)/g and pore volume of 0.92 cm(3)/g. The aluminum-containing samples all have a high cation exchange capacity of around 1 mmol/9 while they still have a silanol number of about 0.9 OH/nm(2); both characteristics being interesting for high-yield postsynthesis modification reactions. Finally, a study is performed on the transformation of the aluminosilicates into their Bronsted acid form via the exchange with ammonium ions and a consecutive heat treatment.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Impact Factor: 9.466
Times cited: 11
DOI: 10.1021/cm031111a
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“Physics of generation and detection of signals used for microcharacterization”. Remond G, Gijbels R, Levenson LL, Shimizu R Scanning Microscopy International, Chicago, Ill. (1994).
Keywords: ME3 Book as editor; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“PIC-MC simulation of an RF capacitively coupled Ar/H2 discharge”. Neyts E, Yan M, Bogaerts A, Gijbels R, Nuclear instruments and methods in physics research: B 202, 300 (2003). http://doi.org/10.1016/S0168-583X(02)01873-6
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.109
Times cited: 8
DOI: 10.1016/S0168-583X(02)01873-6
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“PIC –, MCC numerical simulation of a DC planar magnetron”. Kolev I, Bogaerts A, Plasma processes and polymers 3, 127 (2006). http://doi.org/10.1002/ppap.200500118
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.846
Times cited: 27
DOI: 10.1002/ppap.200500118
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“Piezoelectric surface acoustical phonon limited mobility of electrons in graphene on a GaAs substrate”. Zhang SH, Xu W, Badalyan SM, Peeters FM, Physical review : B : condensed matter and materials physics 87, 075443 (2013). http://doi.org/10.1103/PhysRevB.87.075443
Abstract: We study the mobility of Dirac fermions in monolayer graphene on a GaAs substrate, limited by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (PA) and of the intrinsic deformation potential of acoustical phonons in graphene (DA). In the high-temperature (T) regime, the momentum relaxation rate exhibits the same linear dependence on T but different dependencies on the carrier density n, corresponding to the mobility mu proportional to 1 root n and 1/n, respectively for the PA and DA scattering mechanisms. In the low-T Bloch-Gruneisen regime, the mobility shows the same square-root density dependence mu proportional to root n, but different temperature dependencies mu proportional to T-3 and T-4, respectively for PA and DA phonon scattering. DOI: 10.1103/PhysRevB.87.075443
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 25
DOI: 10.1103/PhysRevB.87.075443
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“Pillars as antipinning centers in superconducting films”. Berdiyorov GR, Misko VR, Milošević, MV, Escoffier W, Grigorieva IV, Peeters FM, Physical review : B : condensed matter and materials physics 77, 024526 (2008). http://doi.org/10.1103/PhysRevB.77.024526
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 35
DOI: 10.1103/PhysRevB.77.024526
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“Pinning and depinning of a classic quasi-one-dimensional Wigner crystal in the presence of a constriction”. Piacente G, Peeters FM, Physical review : B : condensed matter and materials physics 72, 205208 (2005). http://doi.org/10.1103/PhysRevB.72.205208
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 46
DOI: 10.1103/PhysRevB.72.205208
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“Pinning-induced formation of vortex clusters and giant vortices in mesoscopic superconducting disks”. Grigorieva IV, Escoffier W, Misko VR, Baelus BJ, Peeters F, Vinnikov LY, Dubonos SV, Physical review letters 99, 147003 (2007). http://doi.org/10.1103/PhysRevLett.99.147003
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 75
DOI: 10.1103/PhysRevLett.99.147003
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“Pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79”. Idrissi H, Schryvers D, Salje EKH, Zhang H, Carpenter MA, Moya X, , 02029 (2009). http://doi.org/10.1051/esomat/200902029
Abstract: A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246K and 232K under heating and cooling, respectively. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and can not be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was revealed by Dynamical Mechanical Analysis and Resonant Ultrasound Spectroscopy. Transmission Electron Microscopy shows that the pinning is generated by dislocations, which are inherited from the austenite phase. Such dislocations can hinder the movement of stacking faults in the 18R martensite structure or twin boundaries between martensite variants.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/esomat/200902029
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