| Records |
| Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
| Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
| Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
| Volume |
|
Issue |
169 |
Pages |
481-484 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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Thesis |
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Place of Publication |
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Editor |
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| Language |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition  |
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| ISSN |
0-7503-0818-4 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
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Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
| Permanent link to this record |
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| Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
| Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
| Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
| Volume |
|
Issue |
164 |
Pages |
495-498 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
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Wos |
000166835300106 |
Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
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Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
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| Author |
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
| Title |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
Type |
A1 Journal article |
| Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
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| Volume |
|
Issue |
169 |
Pages |
415-418 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
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Thesis |
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Place of Publication |
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Editor |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0-7503-0818-4; 0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
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Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:103432 |
Serial |
877 |
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| Author |
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
| Title |
HREM investigation of a Fe/GaN/Fe tunnel junction |
Type |
A1 Journal article |
| Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
Abbreviated Journal |
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| Volume |
|
Issue |
169 |
Pages |
53-56 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
IOP Publishing |
Place of Publication |
Bristol |
Editor |
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| Language |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0-7503-0818-4 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
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Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:95715 |
Serial |
1503 |
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| Author |
Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G. |
| Title |
A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films |
Type |
A1 Journal article |
| Year |
2003 |
Publication |
Institute of physics conference series
T2 – Microscopy of semiconducting materials |
Abbreviated Journal |
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| Volume |
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Issue |
|
Pages |
397-400 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
Iop |
Place of Publication |
Cambridge |
Editor |
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| Language |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0-7503-0979-2 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
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Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:54860 |
Serial |
2048 |
| Permanent link to this record |
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| Author |
Rosenauer, A.; Gerthsen, D.; Van Aert, S.; van Dyck, D.; den Dekker, A.J. |
| Title |
Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis |
Type |
A1 Journal article |
| Year |
2003 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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| Volume |
|
Issue |
180 |
Pages |
19-22 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
| Abstract |
Semiconductor heterostructures are used for the fabrication of optoelectronic devices. Performance of such devices is governed by their chemical morphology. The composition distribution of quantum wells and dots is influenced by kinetic growth processes which are not understood completely at present. To obtain more information about these effects, methods for composition determination with a spatial resolution at a near atomic scale are necessary. In this paper we focus on the present state of the composition evaluation by the lattice fringe analysis (CELFA) technique and explain the basic ideas, optimum imaging conditions, precision and accuracy. |
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Thesis |
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Place of Publication |
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Editor |
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| Language |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0-7503-0979-2 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:95118 |
Serial |
2710 |
| Permanent link to this record |
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| Author |
Vasiliev, A.L.; Van Tendeloo, G.; Boikov, Y.; Olsson, E.; Ivanov, Z.; Claeson, T.; Kiselev, N.A. |
| Title |
Structural aspects of the combination of Si and YBa2Cu3O7-x |
Type |
A1 Journal article |
| Year |
1995 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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| Volume |
146 |
Issue |
|
Pages |
333-336 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
The microstructure of defects and interfaces as well as interfacial reactions of the YBa2Cu3O7-x (YBCO) thin films on Si or Si on sapphire with single Y-stabilized ZrO2 (YSZ), double CeO2/YSZ or triple MgO/CeO2/YSZ buffer layer has been characterized by transmission electron microscopy The complex buffer made it possible to prevent detrimental interdiffusion and to control the orientation of YBCO layers. |
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Thesis |
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Place of Publication |
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Editor |
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| Language |
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Wos |
A1995BE73Q00070 |
Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
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Approved |
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| Call Number |
UA @ lucian @ c:irua:95922 |
Serial |
3211 |
| Permanent link to this record |
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| Author |
Van Tendeloo, G.; op de Beeck, M.; De Meulenaere, P.; van Dyck, D. |
| Title |
Towards quantitative high resolution electron microscopy? |
Type |
A1 Journal article |
| Year |
1995 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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| Volume |
147 |
Issue |
|
Pages |
67-72 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
| Abstract |
The basics of the interpretation of high resolution images showing detail of the order of 0.1 nm are shortly explained here. The use of a field emission source, a CCD camera and an adapted reconstruction method for restoring the projected crystal potential (focus variation method) allows a quantitative interpretation of HREM images. Examples of partially disordered alloys and carbonate ordering in high Tc superconductors are presented. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
London |
Editor |
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| Language |
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Wos |
A1995BE67F00014 |
Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0-7503-0357-3; 0951-3248; 0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| Impact Factor |
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Times cited |
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Open Access |
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| Notes |
|
Approved |
no |
| Call Number |
UA @ lucian @ c:irua:13015 |
Serial |
3688 |
| Permanent link to this record |
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| Author |
Vincze, L.; Janssens, K.; Adams, F. |
| Title |
X-ray optics for synchrotron-radiation-induced X-ray micro fluorescence at the european synchrotron-radiation facility, Grenoble |
Type |
A1 Journal article |
| Year |
1993 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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| Volume |
|
Issue |
130 |
Pages |
613-616 |
| Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
| Abstract |
Different optical designs for generating synchrotron x-ray micro beams suitable for use in an X-ray fluorescence microscope using an ESRF bending magnet X-ray source are compared. Attention is devoted to the spatial and energy distribution of the photons in the micro beam and to the minimum detection limits that are achievable with each alternative optical system. |
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Thesis |
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Place of Publication |
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Editor |
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Wos |
A1993LW34000126 |
Publication Date |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0305-2346 |
ISBN |
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Additional Links |
UA library record; WoS full record |
| Impact Factor |
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Times cited |
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Open Access |
|
| Notes |
|
Approved |
no |
| Call Number |
UA @ admin @ c:irua:104541 |
Serial |
5917 |
| Permanent link to this record |
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| Author |
Eeckhaoudt, S.; Landsberg, J.; Van Grieken, R.; Jacob, W.; Watt, F.; Witters, H. |
| Title |
A microanalytical study of the gills of aluminium-exposed catfish |
Type |
P1 Proceeding |
| Year |
1993 |
Publication |
Institute of physics conference series
T2 – Proceedings of the 13th International Congress on X-Ray Optics and Microanalysis / Kenway, P.B. [edit.] |
Abbreviated Journal |
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| Volume |
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Issue |
|
Pages |
251-254 |
| Keywords |
P1 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
| Abstract |
Through a combined use of light- and electron microscopy with microanalytical techniques, the aluminium distribution in gills of aluminium-exposed catfish was investigated. This study demonstrates that also with the ''acid-resistant'' catfish, exposed during seven days to acidified water (pH=4.3) with an elevated aluminium concentration (1 mg Al/l), aluminium can be found at, and even in, the gills. |
| Address |
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Thesis |
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Place of Publication |
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Editor |
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| Language |
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Wos |
A1993LW34000051 |
Publication Date |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0951-3248; 2154-6630 |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| Impact Factor |
|
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
no |
| Call Number |
UA @ admin @ c:irua:6264 |
Serial |
8239 |
| Permanent link to this record |
