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Author	Pop, N.; Pralong, V.; Caignaert, V.; Colin, J.F.; Malo, S.; Van Tendeloo, G.; Raveau, B.
Title	Topotactic transformation of the cationic conductor Li₄Mo₅O₁₇ into a rock salt type oxide Li₁₂Mo₅O₁₇			Type	A1 Journal article
Year	2009	Publication	Chemistry of materials	Abbreviated Journal	Chem Mater
Volume	21	Issue	14	Pages	3242-3250
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Intercalation of lithium in the ribbon structure Li4Mo5O17 has been achieved, using both electrochemistry and soft chemistry. The ab initio structure determination of the ¡°Mo−O¡± framework of Li12Mo5O17 shows that the [Mo5O17]¡Þ ribbons keep the same arrangement of edge sharing MoO6 octahedra and the same orientation as in the parent structure but that a topotactic antidistortion of the ribbons appears, as a result of the larger size of Mo4+ in ¡°Li12¡± compared to Mo6+ in ¡°Li4¡±. On the basis of bond valence calculations, it is observed that 12 octahedral sites are available for Li+ in the new structure so that an ordered hypothetical rock salt type structure can be proposed for Li12Mo5O17. After the first Li insertion, a stable reversible capacity of 100 mA¡¤h/g is maintained after 20 cycles. A complete structural reversibility leading back to the ribbon type Li4Mo5O17 structure is obtained using a very low rate of C/100. The exploration of the Li mobility in those oxides shows that Li4Mo5O17 is a cationic conductor with ¦Ò = 10−3.5 S/cm at 500 ¡ãC and Ea = 0.35 eV.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Washington, D.C.	Editor
Language		Wos	000268174400032	Publication Date	2009-06-24
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0897-4756;1520-5002;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	9.466	Times cited	18	Open Access
Notes				Approved	Most recent IF: 9.466; 2009 IF: 5.368
Call Number	UA @ lucian @ c:irua:78285			Serial	3682
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Author	Charkin, D.O.; Demchyna, R.; Prots, Y.; Borrmann, H.; Burkhardt, U.; Schwarz, U.; Schnelle, W.; Plokhikh, I.V.; Kazakov, S.M.; Abakumov, A.M.; Batuk, D.; Verchenko, V.Y.; Tsirlin, A.A.; Curfs, C.; Grin, Y.; Shevelkov, A.V.;
Title	Two New Arsenides, Eu7Cu44As23 and Sr7Cu44As23, With a New Filled Variety of the BaHg11 Structure			Type	A1 Journal article
Year	2014	Publication	Inorganic chemistry	Abbreviated Journal	Inorg Chem
Volume	53	Issue	20	Pages	11173-11184
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Two new ternary arsenides, namely, Eu7Cu44As23 and Sr7Cu44As23, were synthesized from elements at 800 degrees C. Their crystal structure represents a new filled version of the BaHg11 motif with cubic voids alternately occupied by Eu(Sr) and As atoms, resulting in a 2 x 2 x 2 superstructure of the aristotype: space group Fm (3) over barm, a = 16.6707(2) angstrom and 16.7467(2) angstrom, respectively. The Eu derivative exhibits ferromagnetic ordering below 17.5 K. In agreement with band structure calculations both compounds are metals, exhibiting relatively low thermopower, but high electrical and low thermal conductivity.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Easton, Pa	Editor
Language		Wos	000343527700049	Publication Date	2014-09-29
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0020-1669;1520-510X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	4.857	Times cited	9	Open Access
Notes				Approved	Most recent IF: 4.857; 2014 IF: 4.762
Call Number	UA @ lucian @ c:irua:121141			Serial	3784
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Author	Misko, V.R.; Lin, N.S.; Peeters, F.M.
Title	Unconventional dynamics of vortex shells in mesoscopic superconducting corbino disks			Type	A1 Journal article
Year	2010	Publication	Physica: C : superconductivity	Abbreviated Journal	Physica C
Volume	470	Issue	19	Pages	939-941
Keywords	A1 Journal article; Condensed Matter Theory (CMT)
Abstract	The dynamics of vortex matter in mesoscopic superconducting Corbino disk is strongly influenced by the discrete vortex structure arranged in shells. While in previous works the vortex dynamics has been studied in large (macroscopic) and in very small mesoscopic disks (containing only few shells), in the intermediate-size regime it is much more complex and unusual, due to: (i) the competition between the vortexvortex interaction and confinement and (ii) (in)commensurability among the vortex shells. We found that the interplay between these effects can result in a very unusual vortex dynamical behavior: (i) unconventional angular melting (i.e., propagating from the boundary, where the shear stress is minimum, towards the center) and (ii) unconventional dynamics of shells (i.e., the inversion of shell velocities with respect to the gradient driving force). This unusual behavior is found for different number of shells.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Amsterdam	Editor
Language		Wos	000282454400059	Publication Date	2010-03-04
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0921-4534;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	1.404	Times cited	3	Open Access
Notes	; ;			Approved	Most recent IF: 1.404; 2010 IF: 1.415
Call Number	UA @ lucian @ c:irua:85036			Serial	3799
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Author	Lin, N.S.; Misko, V.R.; Peeters, F.M.
Title	Unconventional vortex dynamics in mesoscopic superconducting corbino disks			Type	A1 Journal article
Year	2009	Publication	Physical review letters	Abbreviated Journal	Phys Rev Lett
Volume	102	Issue	19	Pages	197003,1-197003,4
Keywords	A1 Journal article; Condensed Matter Theory (CMT)
Abstract	The discrete shell structure of vortex matter strongly influences the flux dynamics in mesoscopic superconducting Corbino disks. While the dynamical behavior is well understood in large and in very small disks, in the intermediate-size regime it occurs to be much more complex and unusual, due to (in)commensurability between the vortex shells. We demonstrate unconventional vortex dynamics (inversion of shell velocities with respect to the gradient driving force) and angular melting (propagating from the boundary where the shear stress is minimum, towards the center) in mesoscopic Corbino disks.
Address
Corporate Author				Thesis
Publisher		Place of Publication	New York, N.Y.	Editor
Language		Wos	000266207700063	Publication Date	2009-05-14
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0031-9007;1079-7114;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	8.462	Times cited	18	Open Access
Notes				Approved	Most recent IF: 8.462; 2009 IF: 7.328
Call Number	UA @ lucian @ c:irua:77396			Serial	3800
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Author	Zeng, Y.I.; Menghini, M.; Li, D.Y.; Lin, S.S.; Ye, Z.Z.; Hadermann, J.; Moorkens, T.; Seo, J.W.; Locquet, J.-P.; van Haesendonck, C.
Title	Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts			Type	A1 Journal article
Year	2011	Publication	Physical chemistry, chemical physics	Abbreviated Journal	Phys Chem Chem Phys
Volume	13	Issue	15	Pages	6931-6935
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Relying on combined electron-beam lithography and lift-off methods Au/Ti bilayer electrical contacts were attached to individual ZnO nanowires (NWs) that were grown by a vapor phase deposition method. Reliable Schottky-type as well as ohmic contacts were obtained depending on whether or not an ion milling process was used. The response of the ZnO NWs to ultraviolet light was found to be sensitive to the type of contacts. The intrinsic electronic properties of the ZnO NWs were studied in a field-effect transistor configuration. The transfer characteristics, including gate threshold voltage, hysteresis and operational mode, were demonstrated to unexpectedly respond to visible light. The origin of this effect could be accounted for by the presence of point defects in the ZnO NWs.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Cambridge	Editor
Language		Wos	000288951000019	Publication Date	2011-03-14
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1463-9076;1463-9084;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	4.123	Times cited	7	Open Access
Notes				Approved	Most recent IF: 4.123; 2011 IF: 3.573
Call Number	UA @ lucian @ c:irua:89378			Serial	3807
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Author	Kazakov, S.M.; Abakumov, A.M.; Perz-Mato, J.M.; Ovchinnikov, A.V.; Roslova, M.V.; Boltalin, A.I.; Morozov, I.V.; Antipov, E.V.; Van Tendeloo, G.
Title	Uniform patterns of Fe-vacancy ordering in the K_x(Fe,Co)_2-ySe₂ superconductors			Type	A1 Journal article
Year	2011	Publication	Chemistry of materials	Abbreviated Journal	Chem Mater
Volume	23	Issue	19	Pages	4311-4316
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	The Fe-vacancy ordering patterns in the superconducting KxFe2ySe2 and nonsuperconducting Kx(Fe,Co)2ySe2 samples have been investigated by electron diffraction and high angle annular dark field scanning transmission electron microscopy. The Fe-vacancy ordering occurs in the ab plane of the parent ThCr2Si2-type structure, demonstrating two types of patterns. Superstructure I retains the tetragonal symmetry and can be described with the aI = bI = as√5 (as is the unit cell parameter of the parent ThCr2Si2-type structure) supercell and I4/m space group. Superstructure II reduces the symmetry to orthorhombic with the aII = as√2, bII = 2as√2 supercell and the Ibam space group. This type of superstructure is observed for the first time in KxFe2ySe2. The Fe-vacancy ordering is inhomogeneous: the disordered areas interleave with the superstructures I and II in the same crystallite. The observed superstructures represent the compositionally dependent uniform ordering patterns of two species (the Fe atoms and vacancies) on a square lattice. More complex uniform ordered configurations, including compositional stripes, can be predicted for different chemical compositions of the KxFe2ySe2 (0 < y < 0.5) solid solutions.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Washington, D.C.	Editor
Language		Wos	000295487800005	Publication Date	2011-09-13
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0897-4756;1520-5002;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	9.466	Times cited	20	Open Access
Notes				Approved	Most recent IF: 9.466; 2011 IF: 7.286
Call Number	UA @ lucian @ c:irua:92805			Serial	3810
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Author	Hawrylak, P.; Peeters, F.; Ensslin, K.
Title	Carbononics : integrating electronics, photonics and spintronics with graphene quantum dots Preface			Type	Editorial
Year	2016	Publication	Physica status solidi: rapid research letters	Abbreviated Journal	Phys Status Solidi-R
Volume	10	Issue	10	Pages	11-12
Keywords	Editorial; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author				Thesis
Publisher	Wiley-v c h verlag gmbh	Place of Publication	Weinheim	Editor
Language		Wos	000368814500002	Publication Date	2016-01-20
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1862-6254	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	3.032	Times cited	7	Open Access
Notes	; ;			Approved	Most recent IF: 3.032
Call Number	UA @ lucian @ c:irua:131600			Serial	4146
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Author	Liao, Z.L.; Green, R.J.; Gauquelin, N.; Gonnissen, J.; Van Aert, S.; Verbeeck, J.; et al.
Title	Engineering properties by long range symmetry propagation initiated at perovskite heterostructure interface			Type	A1 Journal article
Year	2016	Publication	Advanced functional materials	Abbreviated Journal	Adv Funct Mater
Volume		Issue		Pages	1-25
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	In epitaxial thin film systems, the crystal structure and its symmetry deviate from the bulk counterpart due to various mechanisms such as epitaxial strain and interfacial structural coupling, which induce an accompanying change in their properties. In perovskite materials, the crystal symmetry can be described by rotations of 6-fold coordinated transition metal oxygen octahedra, which are found to be altered at interfaces. Here, we unravel how the local oxygen octahedral coupling (OOC) at perovskite heterostructural interfaces initiates a different symmetry in epitaxial films and provide design rules to induce various symmetries in thin films by careful selecting appropriate combinations of substrate/buffer/film. Very interestingly we discovered that these combinations lead to symmetry changes throughout the full thickness of the film. Our results provide a deep insight into understanding the origin of induced crystal symmetry in a perovskite heterostructure and an intelligent route to achieve unique functional properties.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Weinheim	Editor
Language		Wos		Publication Date
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1616-301x	ISBN		Additional Links	UA library record
Impact Factor	12.124	Times cited		Open Access
Notes				Approved	Most recent IF: 12.124
Call Number	UA @ lucian @ c:irua:134842			Serial	4176
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Author	Neubert, S.; Mitoraj, D.; Shevlin, S.A.; Pulisova, P.; Heimann, M.; Du, Y.; Goh, G.K.L.; Pacia, M.; Kruczała, K.; Turner, S.; Macyk, W.; Guo, Z.X.; Hocking, R.K.; Beranek, R.;
Title	Highly efficient rutile TiO₂ photocatalysts with single Cu(II) and Fe(III) surface catalytic sites			Type	A1 Journal article
Year	2016	Publication	Journal of materials chemistry A : materials for energy and sustainability	Abbreviated Journal	J Mater Chem A
Volume	4	Issue	4	Pages	3127-3138
Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract	Highly active photocatalysts were obtained by impregnation of nanocrystalline rutile TiO2 powders with small amounts of Cu(II) and Fe(III) ions, resulting in the enhancement of initial rates of photocatalytic degradation of 4-chlorophenol in water by factors of 7 and 4, compared to pristine rutile, respectively. Detailed structural analysis by EPR and X-ray absorption spectroscopy (EXAFS) revealed that Cu(II) and Fe(III) are present as single species on the rutile surface. The mechanism of the photoactivity enhancement was elucidated by a combination of DFT calculations and detailed experimental mechanistic studies including photoluminescence measurements, photocatalytic experiments using scavengers, OH radical detection, and photopotential transient measurements. The results demonstrate that the single Cu(II) and Fe(III) ions act as effective cocatalytic sites, enhancing the charge separation, catalyzing “dark” redox reactions at the interface, thus improving the normally very low quantum yields of UV light-activated TiO2 photocatalysts. The exact mechanism of the photoactivity enhancement differs depending on the nature of the cocatalyst. Cu(II)-decorated samples exhibit fast transfer of photogenerated electrons to Cu(II/I) sites, followed by enhanced catalysis of dioxygen reduction, resulting in improved charge separation and higher photocatalytic degradation rates. At Fe(III)-modified rutile the rate of dioxygen reduction is not improved and the photocatalytic enhancement is attributed to higher production of highly oxidizing hydroxyl radicals produced by alternative oxygen reduction pathways opened by the presence of catalytic Fe(III/II) sites. Importantly, it was demonstrated that excessive heat treatment (at 450 degrees C) of photocatalysts leads to loss of activity due to migration of Cu(II) and Fe(III) ions from TiO2 surface to the bulk, accompanied by formation of oxygen vacancies. The demonstrated variety of mechanisms of photoactivity enhancement at single site catalyst-modified photocatalysts holds promise for developing further tailored photocatalysts for various applications.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Cambridge	Editor
Language		Wos	000371077300040	Publication Date	2015-12-30
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	2050-7488; 2050-7496	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	8.867	Times cited	44	Open Access
Notes				Approved	Most recent IF: 8.867
Call Number	UA @ lucian @ c:irua:132322			Serial	4191
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Author	Rozova, M.G.; Grigoriev, V.V.; Bobrikov, I.A.; Filimonov, D.S.; Zakharov, K.V.; Volkova, O.S.; Vasiliev, A.N.; Antipov, E.V.; Tsirlin, A.A.; Abakumov, A.M.
Title	Synthesis, structure and magnetic ordering of the mullite-type Bi₂Fe_4-xCr_xO₉ solid solutions with a frustrated pentagonal Cairo lattice			Type	A1 Journal article
Year	2016	Publication	Journal of the Chemical Society : Dalton transactions	Abbreviated Journal	Dalton T
Volume	45	Issue	45	Pages	1192-1200
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Highly homogeneous mullite-type solid solutions Bi2Fe4-xCrxO9 (x = 0.5, 1, 1.2) were synthesized using a soft chemistry technique followed by a solid-state reaction in Ar. The crystal structure of Bi2Fe3CrO9 was investigated using X-ray and neutron powder diffraction, transmission electron microscopy and Fe-57 Mossbauer spectroscopy (S.G. Pbam, a = 7.95579(9) angstrom , b = 8.39145(9) angstrom, c = 5.98242(7) angstrom, R-F(X-ray) = 0.022, R-F(neutron) = 0.057). The ab planes in the structure are tessellated with distorted pentagonal loops built up by three tetrahedrally coordinated Fe sites and two octahedrally coordinated Fe/Cr sites, linked together in the ab plane by corner-sharing forming a pentagonal Cairo lattice. Magnetic susceptibility measurements and powder neutron diffraction show that the compounds order antiferromagnetically (AFM) with the Neel temperatures decreasing upon increasing the Cr content from T-N similar to 250 K for x = 0 to T-N similar to 155 K for x = 1.2. The magnetic structure of Bi2Fe3CrO9 at T = 30 K is characterized by a propagation vector k = (1/2,1/2,1/2). The tetrahedrally coordinated Fe cations form singlet pairs within dimers of corner-sharing tetrahedra, but spins on the neighboring dimers are nearly orthogonal. The octahedrally coordinated (Fe, Cr) cations form antiferromagnetic up-up-down-down chains along c, while the spin arrangement in the ab plane is nearly orthogonal between nearest neighbors and collinear between second neighbors. The resulting magnetic structure is remarkably different from the one in pure Bi2Fe4O9 and features several types of spin correlations even on crystallographically equivalent exchange that may be caused by the simultaneous presence of Fe and Cr on the octahedral site.
Address
Corporate Author				Thesis
Publisher		Place of Publication	London	Editor
Language		Wos	000367614700041	Publication Date	2015-11-30
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0300-9246; 1477-9226; 1472-7773	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	4.029	Times cited		Open Access
Notes				Approved	Most recent IF: NA
Call Number	UA @ lucian @ c:irua:131095			Serial	4257
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Author	Ilin, A.; Martyshov, M.; Forsh, E.; Forsh, P.; Rumyantseva, M.; Abakumov, A.; Gaskov, A.; Kashkarov, P.
Title	UV effect on NO₂ sensing properties of nanocrystalline In₂O₃			Type	A1 Journal article
Year	2016	Publication	Sensors and actuators : B : chemical	Abbreviated Journal	Sensor Actuat B-Chem
Volume	231	Issue	231	Pages	491-496
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Nanocrystalline indium oxide films with extremely small grains in range of 7-40 nm are prepared by sol-gel method. The influence of grain size on the sensitivity of indium oxide to nitrogen dioxide in low concentration at room temperature is investigated under the UV illumination and without illumination. The sensitivity increases with the decrease of grain sizes when In2O3 is illuminated while in the dark In2O3 with intermediate grain size exhibits the highest response. An explanation of the different behavior of the In2O3 with different grain size sensitivity to NO2 under illumination and in the dark is proposed. We demonstrate that pulsed illumination may be used for NO2 detection at room temperature that significantly reduces the power consumption of sensor. (C) 2016 Elsevier B.V. All rights reserved.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Lausanne	Editor
Language		Wos	000374330900055	Publication Date	2016-03-16
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0925-4005	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	5.401	Times cited	27	Open Access
Notes				Approved	Most recent IF: 5.401
Call Number	UA @ lucian @ c:irua:133630			Serial	4273
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Author	Shumilin, A.V.; Baranov, V.V.; Kabanov, V.V.
Title	Upper critical field in the model with finite-range interaction between electrons			Type	A1 Journal article
Year	2016	Publication	Physical review B	Abbreviated Journal	Phys Rev B
Volume	94	Issue	94	Pages	174506
Keywords	A1 Journal article; Condensed Matter Theory (CMT)
Abstract	We develop a theory of the upper critical field in a BCS superconductor with a nonlocal interaction between electrons. We have shown that the nonlocal interaction is characterized by the parameter k(F)rho(0), where k(F) is the Fermi momentum and rho(0) is the radius of electron-electron interaction. The presence of the external magnetic field leads to the generation of additional components of the order parameter with different angular momenta. This effect leads to the enhancement of the upper critical field above the orbital limiting field. In addition the upward curvature in the temperature dependence of H-c2 (T) in the clean limit is predicted. The impurity scattering suppresses the effect in the dirty limit.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000387884100005	Publication Date	2016-11-14
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	2469-9950;2469-9969;	ISBN		Additional Links	UA library record; WoS full record
Impact Factor	3.836	Times cited		Open Access
Notes	; ;			Approved	Most recent IF: 3.836
Call Number	UA @ lucian @ c:irua:139166			Serial	4365
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Author	Cooper, D.; Denneulin, T.; Bernier, N.; Béché, A.; Rouvière, J.-L.
Title	Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope			Type	A1 Journal article
Year	2016	Publication	Micron	Abbreviated Journal	Micron
Volume	80	Issue	80	Pages	145-165
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Oxford	Editor
Language		Wos	000366770100018	Publication Date	2015-09-15
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0968-4328	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	1.98	Times cited	50	Open Access
Notes				Approved	Most recent IF: 1.98
Call Number	UA @ lucian @ c:irua:136446			Serial	4401
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Author	Sankaran, K.J.; Hoang, D.Q.; Srinivasu, K.; Korneychuk, S.; Turner, S.; Drijkoningen, S.; Pobedinskas, P.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K.
Title				Type	A1 Journal article
Year	2016	Publication	Physica status solidi : A : applications and materials science	Abbreviated Journal	Phys Status Solidi A
Volume	213	Issue	10	Pages	2654-2661
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Utilization of Au and nanocrystalline diamond ( NCD) as interlayers noticeably modifies the microstructure and field electron emission ( FEE) properties of hexagonal boron nitride nanowalls ( hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride ( aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000388321500017	Publication Date	2016-09-27
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1862-6300	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	1.775	Times cited	5	Open Access
Notes	The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Projects G.0456.12 and G.0044.13N, the Methusalem “NANO” network. K. J. Sankaran, P. Pobedinskas, and S. Turner are FWO Postdoctoral Fellows of the Research Foundations Flanders (FWO).			Approved	Most recent IF: 1.775
Call Number	UA @ lucian @ c:irua:144644UA @ admin @ c:irua:144644			Serial	4655
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Author	Sankaran, K.J.; Duc Quang Hoang; Korneychuk, S.; Kunuku, S.; Thomas, J.P.; Pobedinskas, P.; Drijkoningen, S.; Van Bael, M.K.; D'Haen, J.; Verbeeck, J.; Leou, K.-C.; Leung, K.T.; Lin, I.-N.; Haenen, K.
Title	Hierarchical hexagonal boron nitride nanowall-diamond nanorod heterostructures with enhanced optoelectronic performance			Type	A1 Journal article
Year	2016	Publication	RSC advances	Abbreviated Journal	Rsc Adv
Volume	6	Issue	93	Pages	90338-90346
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	A superior field electron emission (FEE) source made from a hierarchical heterostructure, where two-dimensional hexagonal boron nitride (hBN) nanowalls were coated on one-dimensional diamond nanorods (DNRs), is fabricated using a simple and scalable method. FEE characteristics of hBN-DNR display a low turn-on field of 6.0 V mu m(-1), a high field enhancement factor of 5870 and a high life-time stability of 435 min. Such an enhancement in the FEE properties of hBN-DNR derives from the distinctive material combination, i.e., high aspect ratio of the heterostructure, good electron transport from the DNR to the hBN nanowalls and efficient field emission of electrons from the hBN nanowalls. The prospective application of these heterostructures is further evidenced by enhanced microplasma devices using hBN-DNR as a cathode, in which the threshold voltage was lowered to 350 V, affirming the role of hBN-DNR in the improvement of electron emission.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000385451800044	Publication Date	2016-09-12
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	2046-2069	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	3.108	Times cited	8	Open Access
Notes	The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Projects G.0456.12 and G.0044.13N, the Methusalem “NANO” network. KJ Sankaran, and P Pobedinskas are Postdoctoral Fellows of the Research Foundation-Flanders (FWO).			Approved	Most recent IF: 3.108
Call Number	UA @ lucian @ c:irua:144757UA @ admin @ c:irua:144757			Serial	4662
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Author	Lander, L.; Rousse, G.; Batuk, D.; Colin, C.V.; Dalla Corte, D.A.; Tarascon, J.-M.
Title	Synthesis, structure, and electrochemical properties of k-based sulfates K₂M₂(SO₄)₃) with M = Fe and Cu			Type	A1 Journal article
Year	2017	Publication	Inorganic chemistry	Abbreviated Journal	Inorg Chem
Volume	56	Issue	4	Pages	2013-2021
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Stabilizing new host structures through potassium extraction from K-based polyanionic materials has been proven to be an interesting approach to develop new Li+/Na+ insertion materials. Pursuing the same trend, we here report the feasibility of preparing langbeinite “Fe-2(SO4)(3)” via electrochemical and chemical oxidation of K2Fe2(SO4)(3). Additionally, we succeeded in stabilizing a new K2Cu2(SO4)(3) phase via a solid-state synthesis approach. This novel compound crystallizes in a complex orthorhombic structure that differs from that of langbeinite as deduced from synchrotron X-ray and neutron powder diffraction. Electrochemically, the performance of this new phase is limited, which we explain in terms of sluggish diffusion kinetics. We further show that K2Cu2(SO4)(3) decomposes into K2Cu3O(SO4)(3) on heating, and we report for the first time the synthesis of fedotovite K2Cu3O(SO4)(3). Finally, the fundamental attractiveness of these S = 1/2 systems for physicists is examined by neutron magnetic diffraction, which reveals the absence of a long-range ordering of Cu2+ magnetic moments down to 1.5 K.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Easton, Pa	Editor
Language		Wos	000394736600027	Publication Date	2017-01-27
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0020-1669	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	4.857	Times cited	13	Open Access	Not_Open_Access
Notes	; We thank Matthieu Courty for performing TGA/DSC measurements. Use of the 11-BM mail service of the APS at Argonne National Laboratory was supported by the U.S. Department of Energy under Contract DE-AC02-06CH11357 and is acknowledged. The French CRG D1B is acknowledged for allocating neutron beamtime. L.L. thanks the ANR “Hipolite” for the Ph.D. funding. ;			Approved	Most recent IF: 4.857
Call Number	UA @ lucian @ c:irua:142531			Serial	4692
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Author	Woo, S.Y.; Gauquelin, N.; Nguyen, H.P.T.; Mi, Z.; Botton, G.A.
Title	Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy			Type	A1 Journal article
Year	2015	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
Volume	26	Issue	26	Pages	344002
Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract	The interplay between strain and composition is at the basis of heterostructure design to engineer new properties. The influence of the strain distribution on the incorporation of indium during the formation of multiple InGaN/GaN quantum dots (QDs) in nanowire (NW) heterostructures has been investigated, using the combined techniques of geometric phase analysis of atomic-resolution images and quantitative elemental mapping from core-loss electron energy-loss spectroscopy within scanning transmission electron microscopy. The variation in In-content between successive QDs within individual NWs shows a dependence on the magnitude of compressive strain along the growth direction within the underlying GaN barrier layer, which affects the incorporation of In-atoms to minimize the local effective strain energy. Observations suggest that the interfacial misfit between InGaN/GaN within the embedded QDs is mitigated by strain partitioning into both materials, and results in normal stresses inflicted by the presence of the surrounding GaN shell. These experimental measurements are linked to the local piezoelectric polarization fields for individual QDs, and are discussed in terms of the photoluminescence from an ensemble of NWs.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Bristol	Editor
Language		Wos	000359079500003	Publication Date	2015-08-03
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0957-4484	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	3.44	Times cited	19	Open Access
Notes				Approved	Most recent IF: 3.44; 2015 IF: 3.821
Call Number	UA @ lucian @ c:irua:136278			Serial	4504
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Author	Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D.
Title	The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography			Type	A1 Journal article
Year	2011	Publication	Semiconductor science and technology	Abbreviated Journal	Semicond Sci Tech
Volume	26	Issue	12	Pages	1-10
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Si/Si(1 − x − y)GexCy superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si0.744Ge0.244C0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters.
Address
Corporate Author				Thesis
Publisher		Place of Publication	London	Editor
Language		Wos	000300151300010	Publication Date	2011-11-07
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0268-1242	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.305	Times cited		Open Access
Notes				Approved	Most recent IF: 2.305; 2011 IF: 1.723
Call Number	UA @ lucian @ c:irua:136427			Serial	4508
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Author	Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L.
Title	Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy			Type	A1 Journal article
Year	2012	Publication	Applied Physics Letters	Abbreviated Journal	Appl Phys Lett
Volume	112	Issue		Pages	124505
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000312829400128	Publication Date	2012-12-19
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	3.411	Times cited	14	Open Access
Notes				Approved	Most recent IF: 3.411; 2012 IF: 3.794
Call Number	UA @ lucian @ c:irua:136433			Serial	4510
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Author	Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D.
Title	Improved strain precision with high spatial resolution using nanobeam precession electron diffraction			Type	A1 Journal article
Year	2013	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
Volume	103	Issue		Pages	241913
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	NanoBeam Electron Diffraction is a simple and efficient technique to measure strain in nanostructures. Here, we show that improved results can be obtained by precessing the electron beam while maintaining a few nanometer probe size, i.e., by doing Nanobeam Precession Electron Diffraction (N-PED). The precession of the beam makes the diffraction spots more uniform and numerous, making N-PED more robust and precise. In N-PED, smaller probe size and better precision are achieved by having diffraction disks instead of diffraction dots. Precision in the strain measurement better than 2 × 10−4 is obtained with a probe size approaching 1 nm in diameter.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000328706500031	Publication Date	2013-12-14
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	3.411	Times cited	53	Open Access
Notes				Approved	Most recent IF: 3.411; 2013 IF: 3.515
Call Number	UA @ lucian @ c:irua:136442			Serial	4502
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Author	Verchenko, V.Y.; Wei, Z.; Tsirlin, A.A.; Callaert, C.; Jesche, A.; Hadermann, J.; Dikarev, E.V.; Shevelkov, A.V.
Title	Crystal growth of the Nowotny chimney ladder phase Fe₂Ge₃ : exploring new Fe-based narrow-gap semiconductor with promising thermoelectric performance			Type	A1 Journal article
Year	2017	Publication	Chemistry of materials	Abbreviated Journal	Chem Mater
Volume	29	Issue	23	Pages	9954-9963
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	<script type='text/javascript'>document.write(unpmarked('A new synthetic approach based on chemical transport reactions has been introduced to obtain the Nowotny chimney ladder phase Fe2Ge3 in the form of single crystals and polycrystalline powders. The single crystals possess the stoichiometric composition and the commensurate chimney ladder structure of the Ru2Sn3 type in contrast to the polycrystalline samples that are characterized by a complex microstructure. In compliance with the 18-n electron counting rule formulated for T-E intermetallics, electronic structure calculations reveal a narrow-gap semiconducting behavior of Fe2Ge3 favorable for high thermoelectric performance. Measurements of transport and thermoelectric properties performed on the polycrystalline samples confirm the formation of a narrow band gap of similar to 30 meV and reveal high absolute values of the Seebeck coefficient at elevated temperatures. Low glass-like thermal conductivity is observed in a wide temperature range that might be caused by the underlying complex microstructure.'));
Address
Corporate Author				Thesis
Publisher	American Chemical Society	Place of Publication	Washington, D.C	Editor
Language		Wos	000418206600013	Publication Date	2017-11-14
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0897-4756	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	9.466	Times cited	11	Open Access	OpenAccess
Notes	; The authors thank Dr. Sergey Kazakov and Oleg Tyablikov for their help with the PXRD experiments. V.Y.V. appreciates the help of Dr. Sergey Dorofeev in provision and handling of the Mo(CO)<INF>6</INF> reagent. The work is supported by the Russian Science Foundation, Grant No. 17-13-01033. V.Y.V. appreciates the support from the European Regional Development Fund, Project No. TK134. A.A.T. acknowledges financial support by the Federal Ministry for Education and Research under the Sofia Kovalevskaya Award of the Alexander von Humboldt Foundation. E.V.D. thanks the National Science Foundation, Grant No. CHE-1152441. C.C. acknowledges the support from the University of Antwerp through the BOF Grant No. 31445. ;			Approved	Most recent IF: 9.466
Call Number	UA @ lucian @ c:irua:148531			Serial	4869
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Author	Li, L.; Liao, Z.; Gauquelin, N.; Minh Duc Nguyen; Hueting, R.J.E.; Gravesteijn, D.J.; Lobato, I.; Houwman, E.P.; Lazar, S.; Verbeeck, J.; Koster, G.; Rijnders, G.
Title	Epitaxial stress-free growth of high crystallinity ferroelectric PbZr_0.52Ti_0.48O₃ on GaN/AlGaN/Si(111) substrate			Type	A1 Journal article
Year	2018	Publication	Advanced Materials Interfaces	Abbreviated Journal	Adv Mater Interfaces
Volume	5	Issue	2	Pages	1700921
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	<script type='text/javascript'>document.write(unpmarked('Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O-3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O-3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.'));
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000423173800005	Publication Date	2017-11-27
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	2196-7350	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	4.279	Times cited	15	Open Access	Not_Open_Access
Notes	; L.L., Z.L.L., and N.G. contributed equally to this work. L.L. acknowledges financial support from Nano Next NL (Grant no. 7B 04). The authors acknowledge NXP for providing the GaN/AlGaN/Si (111) wafer. N.G. acknowledges funding from the Geconcentreerde Onderzoekacties (GOA) project “Solarpaint” of the University of Antwerp and J.V. acknowledges funding from the Research Foundation Flanders (FWO, Belgium) project 42/FA070100/6088 “nieuwe eigenschappen in complexe Oxides.” N.G. acknowledges the EUROTAPES project (FP7-NMP.2011.2.2-1 Grant no. 280432) which partly funded this study. ;			Approved	Most recent IF: 4.279
Call Number	UA @ lucian @ c:irua:148427UA @ admin @ c:irua:148427			Serial	4872
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Author	Fedoseeva, Y.V.; Orekhov, A.S.; Chekhova, G.N.; Koroteev, V.O.; Kanygin, M.A.; Seovskiy, B.V.; Chuvilin, A.; Pontiroli, D.; Ricco, M.; Bulusheva, L.G.; Okotrub, A.V.
Title	Single-walled carbon nanotube reactor for redox transformation of mercury dichloride			Type	A1 Journal article
Year	2017	Publication	ACS nano	Abbreviated Journal	Acs Nano
Volume	11	Issue	9	Pages	8643-8649
Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract	<script type='text/javascript'>document.write(unpmarked('Single-walled carbon nanotubes (SWCNTs) possessing a confined inner space protected by chemically resistant shells are promising for delivery, storage, and desorption of various compounds, as well as carrying out specific reactions. Here, we show that SWCNTs interact with molten mercury dichloride (HgCl2) and guide its transformation into dimercury dichloride (Hg2Cl2) in the cavity. The chemical state of host SWCNTs remains almost unchanged except for a small p-doping from the guest Hg2Cl2 nanocrystals. The density functional theory calculations reveal that the encapsulated HgCl2 molecules become negatively charged and start interacting via chlorine bridges when local concentration increases. This reduces the bonding strength in HgCl2, which facilitates removal of chlorine, finally leading to formation of Hg2Cl2 species. The present work demonstrates that SWCNTs not only serve as a template for growing nanocrystals but also behave as an electron-transfer catalyst in the spatially confined redox reaction by donation of electron density for temporary use by the guests.'));
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000411918200012	Publication Date	2017-08-07
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1936-0851	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	13.942	Times cited	11	Open Access	Not_Open_Access
Notes	; Collaboration between partner institutions was partially supported by European FP7 IRSES project 295180. We are grateful to the bilateral Program “Russian-German Laboratory at BESSY II” for the assistance in XPS and NEXAFS measurements. We acknowledge C. Tollan for proofreading the manuscript. We are grateful to Dr. Y.V. Shubin for XRD measurements of graphite with HgCl<INF>2</ INF>. ;			Approved	Most recent IF: 13.942
Call Number	UA @ lucian @ c:irua:146770			Serial	4895
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Author	Groenendijk, D.J.; Autieri, C.; Girovsky, J.; Martinez-Velarte, M.C.; Manca, N.; Mattoni, G.; Monteiro, A.M.R.V.L.; Gauquelin, N.; Verbeeck, J.; Otte, A.F.; Gabay, M.; Picozzi, S.; Caviglia, A.D.
Title	Spin-orbit semimetal SrIrO₃ in the two-dimensional limit			Type	A1 Journal article
Year	2017	Publication	Physical review letters	Abbreviated Journal	Phys Rev Lett
Volume	119	Issue	25	Pages	256403
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	<script type='text/javascript'>document.write(unpmarked('We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO(3)d is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.'));
Address
Corporate Author				Thesis
Publisher		Place of Publication	New York, N.Y.	Editor
Language		Wos	000418619100014	Publication Date	2017-12-22
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0031-9007	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	8.462	Times cited	79	Open Access	OpenAccess
Notes	; This work was supported by The Netherlands Organisation for Scientific Research (NWO/OCW) as part of the Frontiers of Nanoscience program (NanoFront), by the Dutch Foundation for Fundamental Research on Matter (FOM), and by the European Research Council under the European Union's H2020 programme/ERC Grant Agreement No. [677458]. The authors thank R. Claessen, P. Schutz, D. Di Sante, G. Sangiovanni, and A. Santander Syro for useful discussions. M. G. gratefully acknowledges support from the French National Research Agency (ANR) (Project LACUNES No. ANR-13-BS04-0006-01). C. A. and S. P. acknowledge financial support from Fondazione Cariplo via the project Magister (Project No. 2013-0726) and from CNR-SPIN via the Seed Project “CAMEO”. N. G. and J. V. acknowledge support from the GOA project “Solarpaint” of the University of Antwerp. The Qu-AntEM microscope was partly funded by the Hercules fund from the Flemish Government. ;			Approved	Most recent IF: 8.462
Call Number	UA @ lucian @ c:irua:148510			Serial	4897
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Author	Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D.G.; Botton, G.A.; Wei, J.Y.T.
Title	Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films			Type	A1 Journal article
Year	2018	Publication	Physical review materials	Abbreviated Journal
Volume	2	Issue	3	Pages	033803
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7-delta grown by pulsed laser deposition are annealed at up to 700 atm O-2 and 900 degrees C, in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15-delta and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9-delta and YBa2Cu6O10-delta phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7-delta powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.
Address
Corporate Author				Thesis
Publisher	American Physical Society	Place of Publication	College Park, Md	Editor
Language		Wos	000428244900004	Publication Date	2018-03-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	2475-9953	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor		Times cited	2	Open Access	Not_Open_Access
Notes	; This work is supported by NSERC, CFI-OIT, and CIFAR. The electron microscopy work was carried out at the Canadian Centre for Electron Microscopy, a National Facility supported by the Canada Foundation for Innovation under the Major Science Initiative program, McMaster University, and NSERC. The XAS work was performed at the Canadian Light Source, which is supported by NSERC, NRC, CIHR, and the University of Saskatchewan. ;			Approved	Most recent IF: NA
Call Number	UA @ lucian @ c:irua:150829			Serial	4982
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Author	Gauquelin, N.; Zhang, H.; Zhu, G.; Wei, J.Y.T.; Botton, G.A.
Title	Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa₂Cu₃O_7-\delta thin films			Type	A1 Journal article
Year	2018	Publication	AIP advances	Abbreviated Journal	Aip Adv
Volume	8	Issue	5	Pages	055022
Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract	We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-delta(YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of highangle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity. (C) 2018 Author(s).
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	Melville, NY	Editor
Language		Wos	000433954000022	Publication Date	2018-05-21
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	2158-3226	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	1.568	Times cited	1	Open Access	OpenAccess
Notes	; We are thankful to Julia Huang for FIB TEM sample preparation. This work is supported by NSERC (through Discovery Grants to GAB and JYTW) and CIFAR. The electron microscopy work was carried out at the Canadian Centre for Electron Microscopy, a National Facility supported by McMaster University, the Canada Foundation for Innovation and NSERC. N.G. acknowledges H. Idrissi for useful discussions. ;			Approved	Most recent IF: 1.568
Call Number	UA @ lucian @ c:irua:152063			Serial	5013
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Author	Deshmukh, S.; Sankaran, K.J.; Srinivasu, K.; Korneychuk, S.; Banerjee, D.; Barman, A.; Bhattacharya, G.; Phase, D.M.; Gupta, M.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K.; Roy, S.S.
Title	Local probing of the enhanced field electron emission of vertically aligned nitrogen-doped diamond nanorods and their plasma illumination properties			Type	A1 Journal article
Year	2018	Publication	Diamond and related materials	Abbreviated Journal	Diam Relat Mater
Volume	83	Issue	83	Pages	118-125
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	A detailed conductive atomic force microscopic investigation is carried out to directly image the electron emission behavior for nitrogen-doped diamond nanorods (N-DNRs). Localized emission measurements illustrate uniform distribution of high-density electron emission sites from N-DNRs. Emission sites coupled to nano graphitic phases at the grain boundaries facilitate electron transport and thereby enhance field electron emission from N-DNRs, resulting in a device operation at low turn-on fields of 6.23 V/mu m, a high current density of 1.94 mA/cm(2) (at an applied field of 11.8 V/mu m) and a large field enhancement factor of 3320 with a long lifetime stability of 980 min. Moreover, using N-DNRs as cathodes, a microplasma device that can ignite a plasma at a low threshold field of 390 V/mm achieving a high plasma illumination current density of 3.95 mA/cm2 at an applied voltage of 550 V and a plasma life-time stability for a duration of 433 min was demonstrated.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Amsterdam	Editor
Language		Wos	000430767200017	Publication Date	2018-02-07
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0925-9635	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.561	Times cited	9	Open Access	Not_Open_Access
Notes	; S. Deshmulch, D. Banerjee and G. Bhattacharya are indebted to Shiv Nadar University for providing Ph.D. scholarships. K.J. Sankaran and K. Haenen like to thank the financial support of the Research Foundation Flanders (FWO) via Research Grant 12I8416N and Research Project 1519817N, and the Methusalem “NANO” network. K.J. Sankaran is a Postdoctoral Fellow of the Research Foundation-Flanders (FWO). The Qu-Ant-EM microscope used for the TEM experiments was partly funded by the Hercules fund from the Flemish Government. S. Korneychuk and J. Verbeeck acknowledge funding from GOA project “Solarpaint” of the University of Antwerp. ;			Approved	Most recent IF: 2.561
Call Number	UA @ lucian @ c:irua:151609UA @ admin @ c:irua:151609			Serial	5030
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Author	Bhat, S.G.; Gauquelin, N.; Sebastian, N.K.; Sil, A.; Béché, A.; Verbeeck, J.; Samal, D.; Kumar, P.S.A.
Title	Orthorhombic vs. hexagonal epitaxial SrIrO₃ thin films : structural stability and related electrical transport properties			Type	A1 Journal article
Year	2018	Publication	Europhysics letters	Abbreviated Journal	Epl-Europhys Lett
Volume	122	Issue	2	Pages	28003
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Metastable orthorhombic SrIrO3 (SIO) is an arch-type spin-orbit coupled material. We demonstrate here a controlled growth of relatively thick (200 nm) SIO films that transform from bulk “6H-type” structure with monoclinic distortion to an orthorhombic lattice by controlling growth temperature. Extensive studies based on high-resolution X-ray diffraction and transmission electron microscopy infer a two distinct structural phases of SIO. Electrical transport reveals a weak temperature-dependent semi-metallic character for both phases. However, the temperature-dependent Hall-coefficient for the orthorhombic SIO exhibits a prominent sign change, suggesting a multiband character in the vicinity of E-F. Our findings thus unravel the subtle structure-property relation in SIO epitaxial thin films. Copyright (C) EPLA, 2018
Address
Corporate Author				Thesis
Publisher		Place of Publication	Paris	Editor
Language		Wos	000435517300001	Publication Date	2018-06-18
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0295-5075	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	1.957	Times cited	4	Open Access	Not_Open_Access
Notes	; SGB and DS acknowledge useful discussions with E. P. Houwman, University of Twente, on X-ray diffraction. DS would like to thank H. Takagi, Max-Planck Institute for Solid State Research, Stuttgart, for the fruitful discussion on the transport properties of SIO thin films. SGB and NKS thank A. Aravind, Bishop Moore College, Mavelikara, for his valuable inputs while depositing the thin films of SIO. SGB, NKS and PSAK acknowledge Nano Mission Council, Department of Science & Technology, India, for the funding. DS acknowledges the financial support from Max-Planck Society through MaxPlanck Partner Group. NG, AB and JV acknowledge funding from GOA project “Solarpaint” of the University of Antwerp and FWO project G093417N. ;			Approved	Most recent IF: 1.957
Call Number	UA @ lucian @ c:irua:152074UA @ admin @ c:irua:152074			Serial	5034
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Author	Grieb, T.; Krause, F.F.; Schowalter, M.; Zillmann, D.; Sellin, R.; Müller-Caspary, K.; Mahr, C.; Mehrtens, T.; Bimberg, D.; Rosenauer, A.
Title	Strain analysis from nano-beam electron diffraction : influence of specimen tilt and beam convergence			Type	A1 Journal article
Year	2018	Publication	Ultramicroscopy	Abbreviated Journal	Ultramicroscopy
Volume	190	Issue	190	Pages	45-57
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Strain analyses from experimental series of nano-beam electron diffraction (NBED) patterns in scanning transmission electron microscopy are performed for different specimen tilts. Simulations of NBED series are presented for which strain analysis gives results that are in accordance with experiment. This consequently allows to study the relation between measured strain and actual underlying strain. A two-tilt method which can be seen as lowest-order electron beam precession is suggested and experimentally implemented. Strain determination from NBED series with increasing beam convergence is performed in combination with the experimental realization of a probe-forming aperture with a cross inside. It is shown that using standard evaluation techniques, the influence of beam convergence on spatial resolution is lower than the influence of sharp rings around the diffraction disc which occur at interfaces and which are caused by the tails of the intensity distribution of the electron probe. (C) 2018 Elsevier B.V. All rights reserved.
Address
Corporate Author				Thesis
Publisher		Place of Publication	Amsterdam	Editor
Language		Wos	000432868800006	Publication Date	2018-04-12
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0304-3991	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.843	Times cited	1	Open Access	OpenAccess
Notes	; This work was supported by the German Research Foundation (DFG) under Contracts RO2057/11-1 and RO2057/12-1. ;			Approved	Most recent IF: 2.843
Call Number	UA @ lucian @ c:irua:151454			Serial	5041
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Author	Fridman, A.; Lin, A.; Miller, V.; Bekeschus, S.; Wende, K.; Weltmann, K.-D.
Title	The plasma treatment unit : an attempt to standardize cold plasma treatment for defined biological effects			Type	A1 Journal article
Year	2018	Publication	Plasma medicine	Abbreviated Journal
Volume	8	Issue	2	Pages	195-201
Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract	Plasma bioscience and medicine are both rapidly growing fields. Their aim is to utilize cold physical plasmas for desired biological outcomes in medicine, biotechnology, agriculture, and general hygienic purposes. Great success has been achieved in many applications with individually designed plasma sources and plasma parameters. Although lab and application-specific tuning of plasmas is a great advantage of this technology, standardized units to define plasma treatments are required to facilitate comparison of the effects found by different researchers who do not use the same plasma sources. By drawing conclusions from over a century of plasma biomedical research, we propose that all researchers adopt the use of a standardized value, the plasma treatment unit (PTU), to describe the biological effects of different cold plasma sources and treatment regimens. It quantifies a key plasma effector in biological systems as an indicator and may provide the foundation for an analogous and clinically relevant unit in the future.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos		Publication Date	2018-06-13
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Additional Links	UA library record
Impact Factor		Times cited		Open Access	Not_Open_Access
Notes				Approved	Most recent IF: NA
Call Number	UA @ lucian @ c:irua:155652			Serial	5123
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