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Author |
Peelaers, H.; Partoens, B.; Peeters, F.M. |
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Title |
Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires |
Type |
A1 Journal article |
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Year |
2012 |
Publication |
Acta physica Polonica: A: general physics, solid state physics, applied physics
T2 – WELCOME Scientific Meeting on Hybrid Nanostructures, AUG 28-31, 2011, Torun, POLAND |
Abbreviated Journal |
Acta Phys Pol A |
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Volume |
122 |
Issue |
2 |
Pages |
294-298 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them. |
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Place of Publication |
Warszawa |
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Wos |
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Publication Date |
0000-00-00 |
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ISSN |
0587-4246 |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
0.469 |
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Notes |
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Approved |
Most recent IF: 0.469; 2012 IF: 0.531 |
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Call Number |
UA @ lucian @ c:irua:101896 |
Serial |
1277 |
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Permanent link to this record |