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Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
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Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
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A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
481-484 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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0000-00-00 |
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ISSN |
0-7503-0818-4 |
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UA library record; WoS full record; |
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Approved |
Most recent IF: NA |
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Call Number  |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
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Author |
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
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Title |
HREM investigation of a Fe/GaN/Fe tunnel junction |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
53-56 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
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IOP Publishing |
Place of Publication |
Bristol |
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Publication Date |
0000-00-00 |
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Series Issue |
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ISSN |
0-7503-0818-4 |
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Additional Links |
UA library record; WoS full record; |
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Times cited |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95715 |
Serial |
1503 |
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Author |
Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
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Title |
Quantitative EFTEM study of germanium quantum dots |
Type |
P1 Proceeding |
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Year |
2001 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
345-346 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Publisher |
Rinton Press |
Place of Publication |
Princeton |
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Publication Date |
0000-00-00 |
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Edition |
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ISSN |
1-58949-003-7 |
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Additional Links |
UA library record; WoS full record; |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95716 |
Serial |
2753 |
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Author |
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
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Title |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
Type |
P1 Proceeding |
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Year |
2001 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
359-360 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab) |
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Publisher |
Princeton University Press |
Place of Publication |
Princeton, N.J. |
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Publication Date |
0000-00-00 |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1-58949-003-7 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95736 |
Serial |
3176 |
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