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	Author	Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.
	Title	Structural aspects of carbon nanotubes			Type	P3 Proceeding
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages	551-555
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	World Scientific	Place of Publication	Singapore	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:13295			Serial	3206
Permanent link to this record



	Author	Amelinckx, S.; Bernaerts, D.; Van Tendeloo, G.; van Landuyt, J.; Lucas, A.A.; Mathot, M.; Lambin, P.
	Title	The morphology, structure and texture of carbon nanotubes: an electron microscopy study			Type	P3 Proceeding
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages	515-541
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	World Scientific	Place of Publication	Singapore	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13294			Serial	2207
Permanent link to this record



	Author	Vanhellemont, J.; Claeys, C.; van Landuyt, J.
	Title	In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces			Type	A1 Journal article
	Year	1995	Publication	Physica status solidi: A: applied research	Abbreviated Journal
	Volume	150	Issue		Pages	497-506
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	A1995RQ21500043	Publication Date	2007-01-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965;1521-396X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	6	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13293			Serial	1582
Permanent link to this record



	Author	Chen, J.H.; van Dyck, D.; op de Beeck, M.; Broeckx, J.; van Landuyt, J.
	Title	Modification of the multislice method for calculating coherent STEM images			Type	A1 Journal article
	Year	1995	Publication	Physica status solidi: A: applied research	Abbreviated Journal
	Volume	150	Issue		Pages	13-22
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	A1995RQ21500002	Publication Date	2007-01-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965;1521-396X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	5	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13292			Serial	2159
Permanent link to this record



	Author	Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.; Ivanov, V.; Nagy, J.B.
	Title	Electron microscopy study of coiled carbon tubules			Type	A1 Journal article
	Year	1995	Publication	Philosophical magazine: A: physics of condensed matter: defects and mechanical properties	Abbreviated Journal
	Volume	71	Issue	3	Pages	605-630
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	A1995QQ40400009	Publication Date	2007-07-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-8610;1460-6992;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	72	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13290			Serial	969
Permanent link to this record



	Author	Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.
	Title	Structural studies on new ternary oxides Ba₈Ta₄Ti₃O₂₄ and Ba₁₀Ta_7.04Ti_1.2O₃₀			Type	A1 Journal article
	Year	1995	Publication	Journal of solid state chemistry	Abbreviated Journal	J Solid State Chem
	Volume	114	Issue	2	Pages	560-574
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc,
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	A1995QH33100040	Publication Date	2002-10-07
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-4596;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.133	Times cited	23	Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:13289			Serial	3261
Permanent link to this record



	Author	Hole, D.E.; Townsend, P.D.; Barton, J.D.; Nistor, L.C.; van Landuyt, J.
	Title	Gallium colloid formation during ion implantation of glass			Type	A1 Journal article
	Year	1995	Publication	Journal of non-crystalline solids	Abbreviated Journal	J Non-Cryst Solids
	Volume	180	Issue		Pages	266-274
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1995QB59400018	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-3093;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.766	Times cited	34	Open Access
	Notes				Approved	PHYSICS, APPLIED 28/145 Q1 #
	Call Number	UA @ lucian @ c:irua:13288			Serial	1313
Permanent link to this record



	Author	Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.
	Title	Some examples of electron microscopy studies of microstructures and phase transitions in solids			Type	A1 Journal article
	Year	1995	Publication	Meccanica	Abbreviated Journal	Meccanica
	Volume	30	Issue		Pages	433-438
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Milano	Editor
	Language		Wos	A1995TD08800003	Publication Date	2005-04-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0025-6455;1572-9648;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.949	Times cited	1	Open Access
	Notes				Approved	CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #
	Call Number	UA @ lucian @ c:irua:13170			Serial	3054
Permanent link to this record



	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; Millan, A.; de Keyzer, R.
	Title	Electron microscopical investigation of AgBr needle crystals			Type	A1 Journal article
	Year	1995	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	151	Issue		Pages	335-341
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1995RE62100017	Publication Date	2003-05-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.698	Times cited	14	Open Access
	Notes				Approved	MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #
	Call Number	UA @ lucian @ c:irua:13163			Serial	941
Permanent link to this record



	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R.
	Title	Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals			Type	A1 Journal article
	Year	1995	Publication	Surface science : a journal devoted to the physics and chemistry of interfaces	Abbreviated Journal	Surf Sci
	Volume	337	Issue		Pages	153-165
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1995RQ74900024	Publication Date	2003-05-13
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0039-6028;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.925	Times cited	10	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13162			Serial	1836
Permanent link to this record



	Author	De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.
	Title	On the interpretation of HREM images of partially ordered alloys			Type	A1 Journal article
	Year	1995	Publication	Ultramicroscopy	Abbreviated Journal	Ultramicroscopy
	Volume	60	Issue	2	Pages	265-282
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
	Abstract	The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1995TZ14700008	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0304-3991;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.436	Times cited	20	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13014			Serial	2438
Permanent link to this record



	Author	De Meulenaere, P.; van Dyck, D.; Van Tendeloo, G.; van Landuyt, J.
	Title	Dynamical electron diffraction in substitutionally disordered column structures			Type	A1 Journal article
	Year	1995	Publication	Ultramicroscopy	Abbreviated Journal	Ultramicroscopy
	Volume	60	Issue	1	Pages	171-185
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
	Abstract	For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1995TG59500017	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0304-3991;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.436	Times cited	14	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13013			Serial	770
Permanent link to this record



	Author	De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.
	Title	How to interpret short-range order HREM images			Type	P3 Proceeding
	Year	1996	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	P3 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Dublin	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:110168			Serial	1493
Permanent link to this record



	Author	Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.
	Title	EM study of sensitisation of silver halide grains			Type	A1 Journal article
	Year	1994	Publication	Icem	Abbreviated Journal
	Volume	13	Issue		Pages
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1994BE09Y00185	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #
	Call Number	UA @ lucian @ c:irua:10607			Serial	1030
Permanent link to this record



	Author	Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.;
	Title	Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry			Type	A1 Journal article
	Year	1993	Publication	Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE	Abbreviated Journal	Appl Surf Sci
	Volume	63	Issue	1-4	Pages	45-51
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier science bv	Place of Publication	Amsterdam	Editor
	Language		Wos	A1993KF03400009	Publication Date	2002-10-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0169-4332;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.711	Times cited	13	Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:104539			Serial	2932
Permanent link to this record



	Author	Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.
	Title	The study of high T_c-superconducting materials by electron microscopy and electron diffraction			Type	A1 Journal article
	Year	1991	Publication	Superconductor science and technology T2 – SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND	Abbreviated Journal	Supercond Sci Tech
	Volume	4	Issue	s:[1]	Pages	S19-S34
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	A survey is given of the application of different electron microscopic techniques to the study of structural features of high T(c)-superconducting materials. Emphasis is laid in this contribution on those structural aspects for the study of which electron microscopy has been essential or has contributed to a significant extent.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	A1991FA42000004	Publication Date	2002-08-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048;1361-6668;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.325	Times cited	2	Open Access
	Notes				Approved	PHYSICS, APPLIED 47/145 Q2 #
	Call Number	UA @ lucian @ c:irua:104503			Serial	3596
Permanent link to this record



	Author	Schryvers, D.; van Landuyt, J.T.
	Title	Electron microscopy study of twin sequences and branching in Ni₆₆Al₃₄ 3r martensite			Type	P1 Proceeding
	Year	1993	Publication	Proceedings Of The International Conference On Martensitic Transformations (icomat-92)	Abbreviated Journal
	Volume		Issue		Pages	263-268
	Keywords	P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1993BD05K00039	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	1	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:104492			Serial	975
Permanent link to this record



	Author	Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J.
	Title	Ordering and defects in Ba_nTa_xTi_yO_3n ternary oxides			Type	P1 Proceeding
	Year	1994	Publication	Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences	Abbreviated Journal
	Volume		Issue		Pages	869-870
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1994BE09Y00422	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2-86883-226-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:104477			Serial	2504
Permanent link to this record



	Author	Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.
	Title	Photoelectric and electrical responses of several erbium silicide/silicon interfaces			Type	A1 Journal article
	Year	1996	Publication	Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE	Abbreviated Journal	Appl Surf Sci
	Volume	102	Issue		Pages	173-177
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1996VJ86100039	Publication Date	2003-05-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0169-4332;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.711	Times cited	3	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:104392			Serial	2611
Permanent link to this record



	Author	Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J.
	Title	Laser thermotreatment of the SnO₂layers			Type	P1 Proceeding
	Year	1998	Publication	Eurosensors XII, vols 1 and 2	Abbreviated Journal
	Volume		Issue		Pages	481-484
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract	The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000077311200117	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-7503-0536-3	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:104343			Serial	1798
Permanent link to this record



	Author	Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al.
	Title	Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization			Type	A1 Journal article
	Year	2000	Publication	Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA	Abbreviated Journal	Mater Sci Forum
	Volume	338-3	Issue		Pages	309-312
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
	Address
	Corporate Author				Thesis
	Publisher	Trans tech publications ltd	Place of Publication	Zurich-uetikon	Editor
	Language		Wos	000165996700075	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0255-5476	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	2	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:104262			Serial	1071
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	Author	Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L.
	Title	Interaction of a Ti-capped Co thin film with Si₃N₄			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	77	Issue	26	Pages	4307-4309
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000166120500021	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:104225			Serial	1683
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	Author	Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J.
	Title	Reliability of copper dual damascene influenced by pre-clean			Type	P1 Proceeding
	Year	2002	Publication	Analysis Of Integrated Circuits	Abbreviated Journal
	Volume		Issue		Pages	118-123
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Ieee	Place of Publication	New york	Editor
	Language		Wos	000177689400022	Publication Date	2003-06-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	5	Open Access
	Notes	Conference name:			Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:104170			Serial	2865
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	Author	Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J.
	Title	Phase assembly and microstructure of CeO₂-doped ZrO₂ ceramics prepared by spark plasma sintering			Type	A1 Journal article
	Year	2005	Publication	Journal of the European Ceramic Society	Abbreviated Journal	J Eur Ceram Soc
	Volume	25	Issue	15	Pages	3437-3442
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	CeO2-doped ZrO2, (8 mol%) starting powder was sintered by means of spark plasma sintering (SPS) at 1300 degrees C without holding time. The stability of the tetragonal ZrO2 phase in the Ce-ZrO2 ceramic sintered under strongly reducing conditions was investigated. The SPS sample consisted of monoclinic and tetragonal ZrO2 phase, with a volume ratio of two to one, as well as a trace amount of a Zr-Ce-O cubic solid solution phase. In contrast, the same powder sintered by hot-pressing in nitrogen at 1300 and 1500 degrees C for 1h showed no tetragonal ZrO2. Microstructural observation of the SPS ceramic by SEM and TEM revealed grains with and without twins. The reason for the appearance of the tetragonal phase in the SPS sample sintered under strongly reducing conditions is discussed. (c) 2004 Elsevier Ltd. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Barking	Editor
	Language		Wos	000232172100006	Publication Date	2004-12-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0955-2219;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	13	Open Access
	Notes				Approved	Most recent IF: 3.411; 2005 IF: 1.567
	Call Number	UA @ lucian @ c:irua:104065			Serial	2576
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	Author	Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K.
	Title	Defects in high-dose oxygen implanted silicon : a TEM study			Type	A1 Journal article
	Year	1991	Publication	Vacuum: the international journal and abstracting service for vacuum science and technology T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND	Abbreviated Journal	Vacuum
	Volume	42	Issue	5-6	Pages	367-369
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Oxford	Editor
	Language		Wos	A1991EV61700007	Publication Date	2002-10-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0042-207X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.858	Times cited	4	Open Access
	Notes				Approved	MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 #
	Call Number	UA @ lucian @ c:irua:104022			Serial	629
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	Author	Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
	Title	In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates			Type	A1 Journal article
	Year	2001	Publication	Journal of materials research	Abbreviated Journal	J Mater Res
	Volume	16	Issue	3	Pages	701-708
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000167407200011	Publication Date	2008-03-06
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0884-2914;2044-5326;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.673	Times cited	4	Open Access
	Notes				Approved	Most recent IF: 1.673; 2001 IF: 1.539
	Call Number	UA @ lucian @ c:irua:103926			Serial	1588
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	Author	de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C.
	Title	A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon			Type	A1 Journal article
	Year	2003	Publication	Physica: B : condensed matter T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK	Abbreviated Journal	Physica B
	Volume	340	Issue		Pages	1013-1017
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000188300200213	Publication Date	2003-11-24
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.386	Times cited	4	Open Access
	Notes				Approved	Most recent IF: 1.386; 2003 IF: 0.908
	Call Number	UA @ lucian @ c:irua:103784			Serial	25
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	Author	de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C.
	Title	Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy			Type	A1 Journal article
	Year	2004	Publication	Journal of the electrochemical society	Abbreviated Journal	J Electrochem Soc
	Volume	151	Issue	9	Pages	G598-G605
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000223622000072	Publication Date	2004-08-30
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0013-4651;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.259	Times cited	13	Open Access
	Notes	Fwo; Iuap P5/01			Approved	Most recent IF: 3.259; 2004 IF: 2.356
	Call Number	UA @ lucian @ c:irua:103760			Serial	330
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	Author	de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
	Title	Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon			Type	A1 Journal article
	Year	1999	Publication	The review of scientific instruments	Abbreviated Journal	Rev Sci Instrum
	Volume	70	Issue	9	Pages	3661-3663
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000082289200026	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0034-6748;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.515	Times cited	5	Open Access
	Notes				Approved	Most recent IF: 1.515; 1999 IF: 1.293
	Call Number	UA @ lucian @ c:irua:103487			Serial	48
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	Author	Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
	Title	Comparative study of structural properties and photoluminescence in InGaN layers with a high In content			Type	A1 Journal article
	Year	2000	Publication	Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS	Abbreviated Journal	Mrs Internet J N S R
	Volume	5	Issue	s:[1]	Pages	art. no.-W11.38
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
	Address
	Corporate Author				Thesis
	Publisher	Materials research society	Place of Publication	Warrendale	Editor
	Language		Wos	000090103600097	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1092-5783	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:103471			Serial	423
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