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“Quantitative annular dark field scanning transmission electron microscopy for nanoparticle atom-counting : what are the limits?”.de Backer A, De wael A, Gonnissen J, Martinez GT, Béché, A, MacArthur KE, Jones L, Nellist PD, Van Aert S, Journal of physics : conference series 644, 012034 (2015). http://doi.org/10.1088/1742-6596/644/012034
Abstract: Quantitative atomic resolution annular dark field scanning transmission electron microscopy (ADF STEM) has become a powerful technique for nanoparticle atom-counting. However, a lot of nanoparticles provide a severe characterisation challenge because of their limited size and beam sensitivity. Therefore, quantitative ADF STEM may greatly benefit from statistical detection theory in order to optimise the instrumental microscope settings such that the incoming electron dose can be kept as low as possible whilst still retaining single-atom precision. The principles of detection theory are used to quantify the probability of error for atom-counting. This enables us to decide between different image performance measures and to optimise the experimental detector settings for atom-counting in ADF STEM in an objective manner. To demonstrate this, ADF STEM imaging of an industrial catalyst has been conducted using the near-optimal detector settings. For this experiment, we discussed the limits for atomcounting diagnosed by combining a thorough statistical method and detailed image simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1088/1742-6596/644/012034
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“Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography”. Cooper D, Rouvière J-L, Béché, A, Kadkhodazadeh S, Semenova ES, Dunin-Borkowsk R, Applied physics letters 99, 261911 (2011). http://doi.org/10.1063/1.3672194
Abstract: The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.3672194
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“Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy”. Cooper D, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 100, 233121 (2012). http://doi.org/10.1063/1.4723572
Abstract: The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
DOI: 10.1063/1.4723572
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“Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope”. Cooper D, Denneulin T, Bernier N, Béché, A, Rouvière J-L, Micron 80, 145 (2016). http://doi.org/10.1016/J.MICRON.2015.09.001
Abstract: The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 50
DOI: 10.1016/J.MICRON.2015.09.001
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“Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy”. Cooper D, Denneulin T, Barnes J-P, Hartmann J-M, Hutin L, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 112, 124505 (2012). http://doi.org/10.1063/1.4767925
Abstract: Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4767925
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“Field mapping with nanometer-scale resolution for the next generation of electronic devices”. Cooper D, de la Peña F, Béché, A, Rouvière J-L, Servanton G, Pantel R, Morin P, Nano letters 11, 4585 (2011). http://doi.org/10.1021/NL201813W
Abstract: In order to improve the performance of todays nanoscaled semiconductor devices, characterization techniques that can provide information about the position and activity of dopant atoms and the strain fields are essential. Here we demonstrate that by using a modern transmission electron microscope it is possible to apply multiple techniques to advanced materials systems in order to provide information about the structure, fields, and composition with nanometer-scale resolution. Off-axis electron holography has been used to map the active dopant potentials in state-of-the-art semiconductor devices with 1 nm resolution. These dopant maps have been compared to electron energy loss spectroscopy maps that show the positions of the dopant atoms. The strain fields in the devices have been measured by both dark field electron holography and nanobeam electron diffraction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 12
DOI: 10.1021/NL201813W
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“Symmetry-constrained electron vortex propagation”. Clark L, Guzzinati G, Béché, A, Lubk A, Verbeeck J, Physical review A 93, 063840 (2016). http://doi.org/10.1103/PhysRevA.93.063840
Abstract: Electron vortex beams hold great promise for development in transmission electron microscopy but have yet to be widely adopted. This is partly due to the complex set of interactions that occur between a beam carrying orbital angular momentum (OAM) and a sample. Herein, the system is simplified to focus on the interaction between geometrical symmetries, OAM, and topology. We present multiple simulations alongside experimental data to study the behavior of a variety of electron vortex beams after interacting with apertures of different symmetries and investigate the effect on their OAM and vortex structure, both in the far field and under free-space propagation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.925
Times cited: 7
DOI: 10.1103/PhysRevA.93.063840
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“Quantitative measurement of orbital angular momentum in electron microscopy”. Clark L, Béché, A, Guzzinati G, Verbeeck J, Physical review : A : atomic, molecular and optical physics 89, 053818 (2014). http://doi.org/10.1103/PhysRevA.89.053818
Abstract: Electron vortex beams have been predicted to enable atomic scale magnetic information measurement, via transfer of orbital angular momentum. Research so far has focused on developing production techniques and applications of these beams. However, methods to measure the outgoing orbital angular momentum distribution are also a crucial requirement towards this goal. Here, we use a method to obtain the orbital angular momentum decomposition of an electron beam, using a multipinhole interferometer. We demonstrate both its ability to accurately measure orbital angular momentum distribution, and its experimental limitations when used in a transmission electron microscope.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.925
Times cited: 23
DOI: 10.1103/PhysRevA.89.053818
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“Exploiting lens aberrations to create electron-vortex beams”. Clark L, Béché, A, Guzzinati G, Lubk A, Mazilu M, Van Boxem R, Verbeeck J, Physical review letters 111, 064801 (2013). http://doi.org/10.1103/PhysRevLett.111.064801
Abstract: A model for a new electron-vortex beam production method is proposed and experimentally demonstrated. The technique calls on the controlled manipulation of the degrees of freedom of the lens aberrations to achieve a helical phase front. These degrees of freedom are accessible by using the corrector lenses of a transmission electron microscope. The vortex beam is produced through a particular alignment of these lenses into a specifically designed astigmatic state and applying an annular aperture in the condenser plane. Experimental results are found to be in good agreement with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 66
DOI: 10.1103/PhysRevLett.111.064801
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“Theory and applications of free-electron vortex states”. Bliokh KY, Ivanov IP, Guzzinati G, Clark L, Van Boxem R, Béché, A, Juchtmans R, Alonso MA, Schattschneider P, Nori F, Verbeeck J, Physics reports 690, 1 (2017). http://doi.org/10.1016/j.physrep.2017.05.006
Abstract: Both classical and quantum waves can form vortices: with helical phase fronts and azimuthal current densities. These features determine the intrinsic orbital angular momentum carried by localized vortex states. In the past 25 years, optical vortex beams have become an inherent part of modern optics, with many remarkable achievements and applications. In the past decade, it has been realized and demonstrated that such vortex beams or wavepackets can also appear in free electron waves, in particular, in electron microscopy. Interest in free-electron vortex states quickly spread over different areas of physics: from basic aspects of quantum mechanics, via applications for fine probing of matter (including individual atoms), to high-energy particle collision and radiation processes. Here we provide a comprehensive review of theoretical and experimental studies in this emerging field of research. We describe the main properties of electron vortex states, experimental achievements and possible applications within transmission electron microscopy, as well as the possible role of vortex electrons in relativistic and high-energy processes. We aim to provide a balanced description including a pedagogical introduction, solid theoretical basis, and a wide range of practical details. Special attention is paid to translate theoretical insights into suggestions for future experiments, in electron microscopy and beyond, in any situation where free electrons occur.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 17.425
Times cited: 210
DOI: 10.1016/j.physrep.2017.05.006
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“Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films : structural stability and related electrical transport properties”. Bhat SG, Gauquelin N, Sebastian NK, Sil A, Béché, A, Verbeeck J, Samal D, Kumar PSA, Europhysics letters 122, 28003 (2018). http://doi.org/10.1209/0295-5075/122/28003
Abstract: Metastable orthorhombic SrIrO3 (SIO) is an arch-type spin-orbit coupled material. We demonstrate here a controlled growth of relatively thick (200 nm) SIO films that transform from bulk “6H-type” structure with monoclinic distortion to an orthorhombic lattice by controlling growth temperature. Extensive studies based on high-resolution X-ray diffraction and transmission electron microscopy infer a two distinct structural phases of SIO. Electrical transport reveals a weak temperature-dependent semi-metallic character for both phases. However, the temperature-dependent Hall-coefficient for the orthorhombic SIO exhibits a prominent sign change, suggesting a multiband character in the vicinity of E-F. Our findings thus unravel the subtle structure-property relation in SIO epitaxial thin films. Copyright (C) EPLA, 2018
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.957
Times cited: 4
DOI: 10.1209/0295-5075/122/28003
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“Asymmetry and non-dispersivity in the Aharonov-Bohm effect”. Becker M, Guzzinati G, Béché, A, Verbeeck J, Batelaan H, Nature communications 10, 1700 (2019). http://doi.org/10.1038/S41467-019-09609-9
Abstract: Decades ago, Aharonov and Bohm showed that electrons are affected by electromagnetic potentials in the absence of forces due to fields. Zeilinger's theorem describes this absence of classical force in quantum terms as the “dispersionless” nature of the Aharonov-Bohm effect. Shelankov predicted the presence of a quantum “force” for the same Aharonov-Bohm physical system as elucidated by Berry. Here, we report an experiment designed to test Shelankov's prediction and we provide a theoretical analysis that is intended to elucidate the relation between Shelankov's prediction and Zeilinger's theorem. The experiment consists of the Aharonov-Bohm physical system; free electrons pass a magnetized nanorod and far-field electron diffraction is observed. The diffraction pattern is asymmetric confirming one of Shelankov's predictions and giving indirect experimental evidence for the presence of a quantum “force”. Our theoretical analysis shows that Zeilinger's theorem and Shelankov's result are both special cases of one theorem.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 12
DOI: 10.1038/S41467-019-09609-9
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“Focused electron beam induced deposition as a tool to create electron vortices”. Béché, A, Winkler R, Plank H, Hofer F, Verbeeck J, Micron 80, 34 (2015). http://doi.org/10.1016/j.micron.2015.07.011
Abstract: Focused electron beam induced deposition (FEBID) is a microscopic technique that allows geometrically controlled material deposition with very high spatial resolution. This technique was used to create a spiral aperture capable of generating electron vortex beams in a transmission electron microscope (TEM). The vortex was then fully characterized using different TEM techniques, estimating the average orbital angular momentum to be approximately 0.8variant Planck's over 2pi per electron with almost 60% of the beam ending up in the l=1 state.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 21
DOI: 10.1016/j.micron.2015.07.011
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“Magnetic monopole field exposed by electrons”. Béché, A, Van Boxem R, Van Tendeloo G, Verbeeck J, Nature physics 10, 26 (2014). http://doi.org/10.1038/NPHYS2816
Abstract: The experimental search for magnetic monopole particles(1-3) has, so far, been in vain. Nevertheless, these elusive particles of magnetic charge have fuelled a rich field of theoretical study(4-10). Here, we created an approximation of a magnetic monopole in free space at the end of a long, nanoscopically thin magnetic needle(11). We experimentally demonstrate that the interaction of this approximate magnetic monopole field with a beam of electrons produces an electron vortex state, as theoretically predicted for a true magnetic monopole(3,11-18). This fundamental quantum mechanical scattering experiment is independent of the speed of the electrons and has consequences for all situations where electrons meet such monopole magnetic fields, as, for example, in solids. The set-up not only shows an attractive way to produce electron vortex states but also provides a unique insight into monopole fields and shows that electron vortices might well occur in unexplored solid-state physics situations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 22.806
Times cited: 131
DOI: 10.1038/NPHYS2816
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“Strain measurement at the nanoscale : comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography”. Béché, A, Rouviere JL, Barnes JP, Cooper D, Ultramicroscopy 131, 10 (2013). http://doi.org/10.1016/j.ultramic.2013.03.014
Abstract: Convergent beam electron diffraction (CBED), nano-beam electron diffraction (NBED or NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography (DFEH or HoloDark) are five TEM based techniques able to quantitatively measure strain at the nanometer scale. In order to demonstrate the advantages and disadvantages of each technique, two samples composed of epitaxial silicon-germanium layers embedded in a silicon matrix have been investigated. The five techniques are then compared in terms of strain precision and accuracy, spatial resolution, field of view, mapping abilities and ease of performance and analysis. (C) 2013 Elsevier By. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 73
DOI: 10.1016/j.ultramic.2013.03.014
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“Dark field electron holography for strain measurement”. Béché, A, Rouvière JL, Barnes JP, Cooper D, Ultramicroscopy 111, 227 (2011). http://doi.org/10.1016/J.ULTRAMIC.2010.11.030
Abstract: Dark field electron holography is a new TEM-based technique for measuring strain with nanometer scale resolution. Here we present the procedure to align a transmission electron microscope and obtain dark field holograms as well as the theoretical background necessary to reconstruct strain maps from holograms. A series of experimental parameters such as biprism voltage, sample thickness, exposure time, tilt angle and choice of diffracted beam are then investigated on a silicon-germanium layer epitaxially embedded in a silicon matrix in order to obtain optimal dark field holograms over a large field of view with good spatial resolution and strain sensitivity.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 31
DOI: 10.1016/J.ULTRAMIC.2010.11.030
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“Efficient creation of electron vortex beams for high resolution STEM imaging”. Béché, A, Juchtmans R, Verbeeck J, Ultramicroscopy 178, 12 (2017). http://doi.org/10.1016/j.ultramic.2016.05.006
Abstract: The recent discovery of electron vortex beams carrying quantised angular momentum in the TEM has led to an active field of research, exploring a variety of potential applications including the possibility of mapping magnetic states at the atomic scale. A prerequisite for this is the availability of atomic sized electron vortex beams at high beam current and mode purity. In this paper we present recent progress showing that by making use of the Aharonov-Bohm effect near the tip of a long single domain ferromagnetic Nickel needle, a very efficient aperture for the production of electron vortex beams can be realised. The aperture transmits more than 99% of all electrons and provides a vortex mode purity of up to 92%. Placing this aperture in the condenser plane of a state of the art Cs corrected microscope allows us to demonstrate atomic resolution HAADF STEM images with spatial resolution better than 1 Angstrom, in agreement with theoretical expectations and only slightly inferior to the performance of a non-vortex probe on the same instrument.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 30
DOI: 10.1016/j.ultramic.2016.05.006
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“Development of a fast electromagnetic beam blanker for compressed sensing in scanning transmission electron microscopy”. Béché, A, Goris B, Freitag B, Verbeeck J, Applied physics letters 108, 093103 (2016). http://doi.org/10.1063/1.4943086
Abstract: The concept of compressed sensing was recently proposed to significantly reduce the electron dose in scanning transmission electron microscopy (STEM) while still maintaining the main features in the image. Here, an experimental setup based on an electromagnetic beam blanker placed in the condenser plane of a STEM is proposed. The beam blanker deflects the beam with a random pattern, while the scanning coils are moving the beam in the usual scan pattern. Experimental images at both the medium scale and high resolution are acquired and reconstructed based on a discrete cosine algorithm. The obtained results confirm that compressed sensing is highly attractive to limit beam damage in experimental STEM even though some remaining artifacts need to be resolved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 40
DOI: 10.1063/1.4943086
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“Three-Dimensional Quantification of the Facet Evolution of Pt Nanoparticles in a Variable Gaseous Environment”. Altantzis T, Lobato I, De Backer A, Béché, A, Zhang Y, Basak S, Porcu M, Xu Q, Sánchez-Iglesias A, Liz-Marzán LM, Van Tendeloo G, Van Aert S, Bals S, Nano letters 19, 477 (2019). http://doi.org/10.1021/acs.nanolett.8b04303
Abstract: Pt nanoparticles play an essential role in a wide variety of catalytic reactions. The activity of the particles strongly depends on their three-dimensional (3D) structure and exposed facets, as well as on the reactive environment. High-resolution electron microscopy has often been used to characterize nanoparticle catalysts but unfortunately most observations so far have been either performed in vacuum and/or using conventional (2D) in situ microscopy. The latter however does not provide direct 3D morphological information. We have implemented a quantitative methodology to measure variations of the 3D atomic structure of nanoparticles under the flow of a selected gas. We were thereby able to quantify refaceting of Pt nanoparticles with atomic resolution during various oxidation−reduction cycles. In a H2 environment, a more faceted surface morphology of the particles was observed with {100} and {111} planes being dominant. On the other hand, in O2 the percentage of {100} and {111} facets decreased and a significant increase of higher order facets was found, resulting in a more rounded morphology. This methodology opens up new opportunities toward in situ characterization of catalytic nanoparticles because for the first time it enables one to directly measure 3D morphology variations at the atomic scale in a specific gaseous reaction environment.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 82
DOI: 10.1021/acs.nanolett.8b04303
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