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“A new method to calculate leakage current and its applications for sub-45nm MOSFETs”. Lujan GS, Magnus W, Soree B, Pourghaderi MA, Veloso A, van Dal MJH, Lauwers A, Kubicek S, De Gendt S, Heyns M, De Meyer K, Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France. Ieee, S.l., page 489 (2005).
Abstract: This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
DOI: 10.1109/ESSDER.2005.1546691
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“Gallium oxide nanorods : novel, template-free synthesis and high catalytic activity in epoxidation reactions”. Lueangchaichaweng W, Brooks NR, Fiorilli S, Gobechiya E, Lin K, Li L, Parres-Esclapez S, Javon E, Bals S, Van Tendeloo G, Martens JA, Kirschhock CEA, Jacobs PA, Pescarmona PP;, Angewandte Chemie: international edition in English 53, 1585 (2014). http://doi.org/10.1002/anie.201308384
Abstract: Gallium oxide nanorods with unprecedented small dimensions (20-80nm length and 3-5nm width) were prepared using a novel, template-free synthesis method. This nanomaterial is an excellent heterogeneous catalyst for the sustainable epoxidation of alkenes with H2O2, rivaling the industrial benchmark microporous titanosilicate TS-1 with linear alkenes and being much superior with bulkier substrates. A thorough characterization study elucidated the correlation between the physicochemical properties of the gallium oxide nanorods and their catalytic performance, and underlined the importance of the nanorod morphology for generating a material with high specific surface area and a high number of accessible acid sites.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
Times cited: 61
DOI: 10.1002/anie.201308384
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“Growth mode and electronic-structure of the epitaxial C60(111)/GeS(001) interface”. Gensterblum G, Hevesi K, Han BY, Yu LM, Pireaux JJ, Thiry PA, Caudano R, Lucas AA, Bernaerts D, Amelinckx S, Van Tendeloo G, Bendele G, Buslaps T, Johnson RL, Foss M, Feidenhans’l R, Le Lay G;, Physical review : B : condensed matter and materials physics 50, 11981 (1994). http://doi.org/10.1103/PhysRevB.50.11981
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.736
Times cited: 81
DOI: 10.1103/PhysRevB.50.11981
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“Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond”. Balasubramaniam Y, Pobedinskas P, Janssens SD, Sakr G, Jomard F, Turner S, Lu YG, Dexters W, Soltani A, Verbeeck J, Barjon J, Nesládek M, Haenen K;, Applied physics letters 109, 062105 (2016). http://doi.org/10.1063/1.4960970
Abstract: The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 mu m thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 mu m h(-1). A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 x 10(16) cm(-3) phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 20
DOI: 10.1063/1.4960970
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