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“Inorganic compounds of atmospheric aerosols”. Claes M, Gysels K, Van Grieken R, Harrison RM page 95 (1998).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Determination of silicon in organic matrices with grazing-emission X-ray fluorescence spectrometry”. Claes M, van Dyck K, Deelstra H, Van Grieken R, Spectrochimica acta: part B : atomic spectroscopy 54, 1517 (1999). http://doi.org/10.1016/S0584-8547(99)00098-1
Abstract: The potential of a prototype grazing-emission X-ray fluorescence spectrometer for reliable analysis of sample solutions, obtained by pressurized microwave oven digestion of Si-spiked organic and biological materials, was investigated as part of an inter-laboratory study. The fact that this grazing-emission technique is based on the total reflection phenomenon and wavelength-dispersive detection, gives it the benefit to determine light elements in a sensitive way. Results of the determination of silicon in pork liver, cellulose, urine, serum, spinach, beer, mineral water and horsetail (dry plant extract) samples are presented. Some of the results are compared with those obtained with other analytical techniques. The study proved that determination of silicon traces in biological matrices represents an extremely difficult task, however, measurements of silicon are achieved with acceptable precision. The most important problems still arise when sample pre-treatment is needed prior to analysis. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/S0584-8547(99)00098-1
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“Micro-analysis of artists' pigments by grazing-emission X-ray fluorescence spectrometry”. Claes M, van Ham R, Janssens K, Van Grieken R, Klockenkämper R, von Bohlen A, Advances in X-ray analysis 41, 262 (1999)
Keywords: A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Exploiting lens aberrations to create electron-vortex beams”. Clark L, Béché, A, Guzzinati G, Lubk A, Mazilu M, Van Boxem R, Verbeeck J, Physical review letters 111, 064801 (2013). http://doi.org/10.1103/PhysRevLett.111.064801
Abstract: A model for a new electron-vortex beam production method is proposed and experimentally demonstrated. The technique calls on the controlled manipulation of the degrees of freedom of the lens aberrations to achieve a helical phase front. These degrees of freedom are accessible by using the corrector lenses of a transmission electron microscope. The vortex beam is produced through a particular alignment of these lenses into a specifically designed astigmatic state and applying an annular aperture in the condenser plane. Experimental results are found to be in good agreement with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 66
DOI: 10.1103/PhysRevLett.111.064801
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“Nitrogen cycling in bioregenerative life support systems : challenges for waste refinery and food production processes”. Clauwaert P, Muys M, Alloul A, De Paepe J, Luther A, Sun X, Ilgrande C, Christiaens MER, Hu X, Zhang D, Lindeboom REF, Sas B, Rabaey K, Boon N, Ronsse F, Geelen D, Vlaeminck SE, Progress in aerospace sciences 91, 87 (2017). http://doi.org/10.1016/J.PAEROSCI.2017.04.002
Abstract: In order to sustain human life in an isolated environment, an efficient conversion of wasted nutrients to food might become mandatory. This is particularly the case for space missions where resupply from earth or in-situ resource utilization is not possible or desirable. A combination of different technologies is needed to allow full recycling of e.g. nitrogenous compounds in space. In this review, an overview is given of the different essential processes and technologies that enable closure of the nitrogen cycle in Bioregenerative Life Support Systems (BLSS). Firstly, a set of biological and physicochemical refinery stages ensures efficient conversion of waste products into the building blocks, followed by the production of food with a range of biological methods. For each technology, bottlenecks are identified. Furthermore, challenges and outlooks are presented at the integrated system level. Space adaptation and integration deserve key attention to enable the recovery of nitrogen for the production of nutritional food in space, but also in closed loop systems on earth.
Keywords: A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.1016/J.PAEROSCI.2017.04.002
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“Roadside disturbance promotes plant communities with arbuscular mycorrhizal associations in mountain regions worldwide”. Clavel J, Lembrechts J, Lenoir J, Haider S, McDougall K, Nunez MA, Alexander J, Barros A, Milbau A, Seipel T, Pauchard A, Fuentes-Lillo E, Backes AR, Dar P, Reshi ZA, Aleksanyan A, Zong S, Sierra JRA, Aschero V, Verbruggen E, Nijs I, Ecography , e07051 (2024). http://doi.org/10.1111/ECOG.07051
Abstract: We assessed the impact of road disturbances on the dominant mycorrhizal types in ecosystems at the global level and how this mechanism can potentially lead to lasting plant community changes. We used a database of coordinated plant community surveys following mountain roads from 894 plots in 11 mountain regions across the globe in combination with an existing database of mycorrhizal-plant associations in order to approximate the relative abundance of mycorrhizal types in natural and disturbed environments. Our findings show that roadside disturbance promotes the cover of plants associated with arbuscular mycorrhizal (AM) fungi. This effect is especially strong in colder mountain environments and in mountain regions where plant communities are dominated by ectomycorrhizal (EcM) or ericoid-mycorrhizal (ErM) associations. Furthermore, non-native plant species, which we confirmed to be mostly AM plants, are more successful in environments dominated by AM associations. These biogeographical patterns suggest that changes in mycorrhizal types could be a crucial factor in the worldwide impact of anthropogenic disturbances on mountain ecosystems. Indeed, roadsides foster AM-dominated systems, where AM-fungi might aid AM-associated plant species while potentially reducing the biotic resistance against invasive non-native species, often also associated with AM networks. Restoration efforts in mountain ecosystems will have to contend with changes in the fundamental make-up of EcM- and ErM plant communities induced by roadside disturbance.
Keywords: A1 Journal article; Plant and Ecosystems (PLECO) – Ecology in a time of change
Impact Factor: 5.9
DOI: 10.1111/ECOG.07051
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“Dry Reforming of Methane in a Gliding Arc Plasmatron: Towards a Better Understanding of the Plasma Chemistry”. Cleiren E, Heijkers S, Ramakers M, Bogaerts A, Chemsuschem 10, 4025 (2017). http://doi.org/10.1002/cssc.201701274
Abstract: Dry reforming of methane (DRM) in a gliding arc plasmatron is studied for different CH4 fractions in the mixture. The CO2 and CH4 conversions reach their highest values of approximately 18 and 10%, respectively, at 25% CH4 in the gas mixture, corresponding to an overall energy cost of 10 kJ L@1 (or 2.5 eV per molecule) and an energy efficiency of 66%. CO and H2 are the major products, with the formation of smaller fractions of C2Hx (x=2, 4, or 6) compounds and H2O. A chemical kinetics model is used to investigate the underlying chemical processes. The calculated CO2 and CH4 conversion and the energy efficiency are in good agreement with the experimental data. The model calculations reveal that the reaction of CO2 (mainly at vibrationally excited levels) with H radicals is mainly responsible for
the CO2 conversion, especially at higher CH4 fractions in the mixture, which explains why the CO2 conversion increases with increasing CH4 fraction. The main process responsible for CH4 conversion is the reaction with OH radicals. The excellent energy efficiency can be explained by the non-equilibrium character of the plasma, in which the electrons mainly activate the gas molecules, and by the important role of the vibrational kinetics of CO2. The results demonstrate that a gliding arc plasmatron is very promising for DRM.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 7.226
Times cited: 23
DOI: 10.1002/cssc.201701274
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“Predicted field-dependent increase of critical currents in asymmetric superconducting nanocircuits”. Clem JR, Mawatari Y, Berdiyorov GR, Peeters FM, Physical review : B : condensed matter and materials physics 85, 144511 (2012). http://doi.org/10.1103/PhysRevB.85.144511
Abstract: The critical current of a thin superconducting strip of width W much larger than the Ginzburg-Landau coherence length xi but much smaller than the Pearl length Lambda = 2 lambda(2)/d is maximized when the strip is straight with defect-free edges. When a perpendicular magnetic field is applied to a long straight strip, the critical current initially decreases linearly with H but then decreases more slowly with H when vortices or antivortices are forced into the strip. However, in a superconducting strip containing sharp 90 degrees or 180 degrees turns, the zero-field critical current at H = 0 is reduced because vortices or antivortices are preferentially nucleated at the inner corners of the turns, where current crowding occurs. Using both analytic London-model calculations and time-dependent Ginzburg-Landau simulations, we predict that in such asymmetric strips the resulting critical current can be increased by applying a perpendicular magnetic field that induces a current-density contribution opposing the applied current density at the inner corners. This effect should apply to all turns that bend in the same direction.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 40
DOI: 10.1103/PhysRevB.85.144511
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“Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories”. Clima S, Belmonte A, Degraeve R, Fantini A, Goux L, Govoreanu B, Jurczak M, Ota K, Redolfi A, Kar GS, Pourtois G, Journal of computational electronics 16, 1011 (2017). http://doi.org/10.1007/S10825-017-1042-3
Abstract: <script type='text/javascript'>document.write(unpmarked('The resistive random-access memory (RRAM) device concept is close to enabling the development of a new generation of non-volatile memories, provided that their reliability issues are properly understood. The design of a RRAM operating with extrinsic defects based on metallic inclusions, also called conductive bridge RAM, allows the use of a large spectrum of solid electrolytes. However, when scaled to device dimensions that meet the requirements of the latest technological nodes, the discrete nature of the atomic structure of the materials impacts the device operation. Using density functional theory simulations, we evaluated the migration kinetics of Cu conducting species in amorphous and solid electrolyte materials, and established that atomic disorder leads to a large variability in terms of defect stability and kinetic barriers. This variability has a significant impact on the filament resistance and its dynamics, as evidenced during the formation step of the resistive filament. Also, the atomic configuration of the formed filament can age/relax to another metastable atomic configuration, and lead to a modulation of the resistivity of the filament. All these observations are qualitatively explained on the basis of the computed statistical distributions of the defect stability and on the kinetic barriers encountered in RRAM materials.'));
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.526
Times cited: 2
DOI: 10.1007/S10825-017-1042-3
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“First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device”. Clima S, Chen YY, Chen CY, Goux L, Govoreanu B, Degraeve R, Fantini A, Jurczak M, Pourtois G, Journal of applied physics 119, 225107 (2016). http://doi.org/10.1063/1.4953673
Abstract: Resistive Random Access Memories are among the most promising candidates for the next generation of non-volatile memory. Transition metal oxides such as HfOx and TaOx attracted a lot of attention due to their CMOS compatibility. Furthermore, these materials do not require the inclusion of extrinsic conducting defects since their operation is based on intrinsic ones (oxygen vacancies). Using Density Functional Theory, we evaluated the thermodynamics of the defects formation and the kinetics of diffusion of the conducting species active in transition metal oxide RRAM materials. The gained insights based on the thermodynamics in the Top Electrode, Insulating Matrix and Bottom Electrode and at the interfaces are used to design a proper defect reservoir, which is needed for a low-energy reliable switching device. The defect reservoir has also a direct impact on the retention of the Low Resistance State due to the resulting thermodynamic driving forces. The kinetics of the diffusing conducting defects in the Insulating Matrix determine the switching dynamics and resistance retention. The interface at the Bottom Electrode has a significant impact on the low-current operation and long endurance of the memory cell. Our first-principles findings are confirmed by experimental measurements on fabricated RRAM devices. Published by AIP Publishing.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 17
DOI: 10.1063/1.4953673
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“First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism”. Clima S, Chen YY, Degraeve R, Mees M, Sankaran K, Govoreanu B, Jurczak M, De Gendt S, Pourtois G, Applied physics letters 100, 133102 (2012). http://doi.org/10.1063/1.3697690
Abstract: Transition metal oxide-based resistor random access memory (RRAM) takes advantage of oxygen-related defects in its principle of operation. Since the change in resistivity of the material is controlled by the oxygen deficiency level, it is of major importance to quantify the kinetics of the oxygen diffusion, key factor for oxide stoichiometry. Ab initio accelerated molecular dynamics techniques are employed to investigate the oxygen diffusivity in amorphous hafnia (HfOx, x = 1.97, 1.0, 0.5). The computed kinetics is in agreement with experimental measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697690]
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 63
DOI: 10.1063/1.3697690
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“Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex>, and TaOx based resistive random access memories”. Clima S, Chen YY, Fantini A, Goux L, Degraeve R, Govoreanu B, Pourtois G, Jurczak M, IEEE electron device letters 36, 769 (2015). http://doi.org/10.1109/LED.2015.2448731
Abstract: We report on the ineffectiveness of programming oxide-based resistive random access memory (OxRAM) at low current with a program and verify algorithm due to intrinsic relaxation of the verified distribution to the natural state distribution obtained by single-pulse programming without verify process. Based on oxygen defect formation thermodynamics and on their diffusion barriers in amorphous HfOx and TaOx, we describe the intrinsic nature of tailing of the verified low resistive state and high resistive state distributions. We introduce different scenarios to explain fast distribution widening phenomenon, which is a fundamental limitation for OxRAM current scaling and device reliability.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.048
Times cited: 33
DOI: 10.1109/LED.2015.2448731
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“HfOx as RRAM material : first principles insights on the working principles”. Clima S, Govoreanu B, Jurczak M, Pourtois G, Microelectronic engineering 120, 13 (2014). http://doi.org/10.1016/j.mee.2013.08.002
Abstract: First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed – the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 22
DOI: 10.1016/j.mee.2013.08.002
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“Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations”. Clima S, Kaczer B, Govoreanu B, Popovici M, Swerts J, Verhulst AS, Jurczak M, De Gendt S, Pourtois G, IEEE electron device letters 34, 402 (2013). http://doi.org/10.1109/LED.2013.2238885
Abstract: First-principle complex band structures have been computed for rutile TiO2 and tetragonal ZrO2 insulating materials that are of current technological relevance to dynamic random accessmemorymetal-insulator-metal (MIM) capacitors. From the magnitude of the complex wave vectors in different orientations, the most penetrating orientations have been identified. Tunneling effective masses m(tunnel) have been extracted, are shown to be a crucial parameter for the intrinsic leakage, and are identified to be an important parameter in further scaling of MIM capacitors.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.048
Times cited: 3
DOI: 10.1109/LED.2013.2238885
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“First-principles perspective on poling mechanisms and ferroelectric/antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications”. Clima S, McMitchell SRC, Florent K, Nyns L, Popovici M, Ronchi N, Di Piazza L, Van Houdt J, Pourtois G, 2018 Ieee International Electron Devices Meeting (iedm) (2018)
Abstract: We investigate at the atomic level the most probable phase transformations under strain, that are responsible for the ferroelectric/ antiferroelectric behavior in Hf1-xZrxO2 materials. Four different crystalline phase transformations exhibit a polar/non-polar transition: monoclinic-to-orthorhombic requires a gliding strain tensor, orthorhombic-to-orthorhombic transformation does not need strain to polarize the material, whereas tetragonal-to-cubic cell compression and tetragonal-to-orthorhombic cell elongation destabilizes the non-polar tetragonal phase, facilitating the transition towards a polar atomic configuration, therefore changing the polarization-electric field loop from antiferroelectric to ferroelectric. Oxygen vacancies can reduce drastically the polarization reversal barriers.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Ferroelectric switching in FEFET : physics of the atomic mechanism and switching dynamics in HfZrOx, HfO2 with oxygen vacancies and Si dopants”. Clima S, O'Sullivan BJ, Ronchi N, Bardon MG, Banerjee K, Van den Bosch G, Pourtois G, van Houdt J, (2020). http://doi.org/10.1109/IEDM13553.2020.9372117
Abstract: The fine balance between dipole-field energy and anion drift force defines the switching mechanism during polarization reversal: for the first time we show that only Pbcm mechanism obeys the ferroelectric switching physics, whereas P4(2)/nmc (or any other) mechanism does not. However, with lower energy barrier, it represents an important antiferroelectric mechanism. Constraints relaxation can lead to 90 degrees polarization rotation (domain deactivation). Intrinsically, the Si/VO-doping can switch faster than undoped HfO2 or HfZrOx. Theoretical Arrhenius model / intrinsic material switching (DFT) overestimates the switching speed extracted from experiments.
Keywords: P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1109/IEDM13553.2020.9372117
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“Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight”. Clima S, Wouters DJ, Adelmann C, Schenk T, Schroeder U, Jurczak M, Pourtois G, Applied physics letters 104, 092906 (2014). http://doi.org/10.1063/1.4867975
Abstract: The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 mu C/cm(2). We show the correlation between the computed polarization reversal barrier and the experimental coercive fields. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 79
DOI: 10.1063/1.4867975
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“Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays”. Cloetens P, Ludwig W, Baruchel J, van Dyck D, van Landuyt J, Guigay JP, Schlenker M, Applied physics letters 75, 2912 (1999). http://doi.org/10.1063/1.125225
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 481
DOI: 10.1063/1.125225
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“Investigation by electron diffraction microscopy of (RE)BaCuOS polycrystalline ceramic compounds: interpretation of unexpected superstructures and influence of secondary phases”. Cloots R, Rulmont A, Krekels T, Van Tendeloo G, Diko P, Ausloos M, Journal of crystal growth 129, 394 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 5
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“Collective cyclotron modes in high mobility two-dimensional hole systems in GaAs-(Ga,Al)As heterojunctions: 2: experiments at magnetic fields of up to forty Tesla”. Cole BE, Batty W, Singleton J, Chamberlain JM, Li L, van Bockstal L, Imanaka Y, Shimamoto Y, Miura N, Peeters FM, Henini M, Cheng T, Journal of physics : condensed matter 9, 4887 (1997)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 5
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“Collective cyclotron modes in high mobility two-dimensional hole systems in GaAs-(Ga,Al)As heterojunctions: 1: experiments at low magnetic fields and theory”. Cole BE, Peeters FM, Ardavan A, Hill SO, Singleton J, Batty W, Chamberlain JM, Polisskii A, Henini M, Cheng T, Journal of physics : condensed matter 9, 3163 (1997)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 20
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“Dislocation-mediated relaxation in nanograined columnar palladium films revealed by on-chip time-resolved HRTEM testing”. Colla M-S, Amin-Ahmadi B, Idrissi H, Malet L, Godet S, Raskin J-P, Schryvers D, Pardoen T, Nature communications 6, 5922 (2015). http://doi.org/10.1038/ncomms6922
Abstract: The high-rate sensitivity of nanostructured metallic materials demonstrated in the recent literature is related to the predominance of thermally activated deformation mechanisms favoured by a large density of internal interfaces. Here we report time-resolved high-resolution electron transmission microscopy creep tests on thin nanograined films using on-chip nanomechanical testing. Tests are performed on palladium, which exhibited unexpectedly large creep rates at room temperature. Despite the small 30-nm grain size, relaxation is found to be mediated by dislocation mechanisms. The dislocations interact with the growth nanotwins present in the grains, leading to a loss of coherency of twin boundaries. The density of stored dislocations first increases with applied deformation, and then decreases with time to drive additional deformation while no grain boundary mechanism is observed. This fast relaxation constitutes a key issue in the development of various micro- and nanotechnologies such as palladium membranes for hydrogen applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 34
DOI: 10.1038/ncomms6922
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“High strength-ductility of thin nanocrystalline palladium films with nanoscale twins : on-chip testing and grain aggregate model”. Colla M-S, Wang B, Idrissi H, Schryvers D, Raskin J-P, Pardoen T, Acta materialia 60, 1795 (2012). http://doi.org/10.1016/j.actamat.2011.11.054
Abstract: The mechanical behaviour of thin nanocrystalline palladium films with an ∼30 nm in plane grain size has been characterized on chip under uniaxial tension. The films exhibit a large strain hardening capacity and a significant increase in the strength with decreasing thickness. Transmission electron microscopy has revealed the presence of a moderate density of growth nanotwins interacting with dislocations. A semi-analytical grain aggregate model is proposed to investigate the impact of different contributions to the flow behaviour, involving the effect of twins, of grain size and of the presence of a thin surface layer. This model provides guidelines to optimizing the strength/ductility ratio of the films.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 38
DOI: 10.1016/j.actamat.2011.11.054
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“Characterization of single-wall carbon nanotubes produced by CCVD method”. Colomer J-F, Benoit J-M, Stephan C, Lefrant S, Van Tendeloo G, Nagy JB, Chemical physics letters 345, 11 (2001). http://doi.org/10.1016/S0009-2614(01)00841-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.815
Times cited: 45
DOI: 10.1016/S0009-2614(01)00841-7
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“Microwave-assisted bromination of double-walled carbon nanotubes”. Colomer J-F, Marega R, Traboulsi H, Meneghetti M, Van Tendeloo G, Bonifazi D, Chemistry of materials 21, 4747 (2009). http://doi.org/10.1021/cm902029m
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 46
DOI: 10.1021/cm902029m
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“Effect of high temperature deposition on CoSi2 phase formation”. Comrie CM, Ahmed A, Smeets D, Demeulemeester J, Turner S, Van Tendeloo G, Detavernier C, Vantomme A, Journal of applied physics 113, 234902 (2013). http://doi.org/10.1063/1.4811352
Abstract: This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 2
DOI: 10.1063/1.4811352
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“XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers”. Conard T, de Witte H, Loo R, Verheyen P, Vandervorst W, Caymax M, Gijbels R, Thin solid films : an international journal on the science and technology of thin and thick films 343/344, 583 (1999). http://doi.org/10.1016/S0040-6090(99)00122-4
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.879
Times cited: 1
DOI: 10.1016/S0040-6090(99)00122-4
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“A Universal Deposition Protocol for Planar Heterojunction Solar Cells with High Efficiency Based on Hybrid Lead Halide Perovskite Families”. Conings B, Babayigit A, Klug M T, Bai S, Gauquelin N, Sakai N, Wang J T-W, Verbeeck J, Boyen H-G, Advanced materials 28, 10701 (2016). http://doi.org/10.1002/adma.201603747
Abstract: A robust and expedient gas quenching method is developed for the solution deposition of hybrid perovskite thin films. The method offers a reliable standard practice for the fabrication of a non-exhaustive variety of perovskites exhibiting excellent film morphology and commensurate high performance in both regular and inverted structured solar cell architectures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 95
DOI: 10.1002/adma.201603747
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“Getting rid of anti-solvents: gas quenching for high performance perovskite solar cells”. Conings B, Babayigit A, Klug M, Bai S, Gauquelin N, Sakai N, Wang JT-W, Verbeeck J, Boyen H-G, Snaith H, 2018 Ieee 7th World Conference On Photovoltaic Energy Conversion (wcpec)(a Joint Conference Of 45th Ieee Pvsc, 28th Pvsec &, 34th Eu Pvsec) (2018). http://doi.org/10.1109/PVSC.2018.8547987
Abstract: As the field of perovskite optoelectronics developed, a plethora of strategies has arisen to control their electronic and morphological characteristics for the purpose of producing high efficiency devices. Unfortunately, despite this wealth of deposition approaches, the community experiences a great deal of irreproducibility between different laboratories, batches and preparation methods. Aiming to address this issue, we developed a simple deposition method based on gas quenching that yields smooth films for a wide range of perovskite compositions, in single, double, triple and quadruple cation varieties, and produces planar heterojunction devices with competitive efficiencies, so far up to 20%.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
DOI: 10.1109/PVSC.2018.8547987
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“Continuum versus discrete flux behaviour in large mesoscopic Bi2Sr2CaCu2O8+\delta disks”. Connolly MR, Bemding SJ, Milošević, MV, Clem JR, Tamegai T, Physica: C : superconductivity 470, S896 (2010). http://doi.org/10.1016/j.physc.2009.11.117
Abstract: We have used scanning Hall probe and local Hall magnetometry measurements to map flux profiles in superconducting Bi2Sr2CaCu2O8+δ disks whose diameters span the crossover between the bulk and mesoscopic vortex regimes. The behaviour of large disks (greater-or-equal, slanted20 μm diameter) is well described by analytic models that assume a continuous distribution of flux in the sample. Small disks (less-than-or-equals, slant10 μm diameter), on the other hand, exhibit clear signatures of the underlying discrete vortex structure as well as competition between triangular Abrikosov ordering and the formation of shell structures driven by interactions with circulating edge currents. At low fields we are able to directly observe the characteristic mesoscopic compression of vortex clusters which is linked to oscillations in the diameter of the vortex dome in increasing magnetic fields. At higher fields, where single vortex resolution is lost, we are still able to track configurational changes in the vortex patterns, since competing vortex orders impose unmistakable signatures on local magnetisation curves. Our observations are in excellent agreement with molecular-dynamics numerical simulations which lead us to a natural definition of the lengthscale for the crossover between discrete and continuum behaviour in our system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.404
DOI: 10.1016/j.physc.2009.11.117
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