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“Spin-orbit-mediated manipulation of heavy-hole spin qubits in gated semiconductor nanodevices”. Szumniak P, Bednarek S, Partoens B, Peeters FM, Physical review letters 109, 107201 (2012). http://doi.org/10.1103/PhysRevLett.109.107201
Abstract: A novel spintronic nanodevice is proposed that is able to manipulate the single heavy-hole spin state in a coherent manner. It can act as a single quantum logic gate. The heavy-hole spin transformations are realized by transporting the hole around closed loops defined by metal gates deposited on top of the nanodevice. The device exploits Dresselhaus spin-orbit interaction, which translates the spatial motion of the hole into a rotation of the spin. The proposed quantum gate operates on subnanosecond time scales and requires only the application of a weak static voltage which allows for addressing heavy-hole spin qubits individually. Our results are supported by quantum mechanical time-dependent calculations within the four-band Luttinger-Kohn model.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 41
DOI: 10.1103/PhysRevLett.109.107201
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“Quantitative study of particle size distribution in an in-situ grown Al-TiB2 composite by synchrotron X-ray diffraction and electron microscopy”. Tang Y, Chen Z, Borbely A, Ji G, Zhong SY, Schryvers D, Ji V, Wang HW, Materials characterization 102, 131 (2015). http://doi.org/10.1016/j.matchar.2015.03.003
Abstract: Synchrotron X-ray diffraction and transmission electron microscopy (TEM) were applied to quantitatively characterize the average particle size and size distribution of free-standing TiB2 particles and TiB2 particles in an insitu grown Al–TiB2 composite. The detailed evaluations were carried out by X-ray line profile analysis using the restrictedmoment method and multiplewhole profile fitting procedure (MWP). Both numericalmethods indicate that the formed TiB2 particles are well crystallized and free of crystal defects. The average particle size determined from different Bragg reflections by the restricted moment method ranges between 25 and 55 nm, where the smallest particle size is determined using the 110 reflection suggesting the highest lateral-growth velocity of (110) facets. TheMWP method has shown that the in-situ grown TiB2 particles have a very low dislocation density (~1011 m−2) and their size distribution can be described by a log-normal distribution. Good agreement was found between the results obtained from the restricted moment and MWP methods, which was further confirmed by TEM.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.714
Times cited: 41
DOI: 10.1016/j.matchar.2015.03.003
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“Technique for the sp2/sp3 characterization of carbon materials: ab initio calculation of near-edge structure in electron energy-loss spectra”. Titantah JT, Lamoen D, Physical review : B : condensed matter and materials physics 70, 033101 (2004). http://doi.org/10.1103/PhysRevB.70.075115
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.70.075115
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“Interlayer excitons in transition metal dichalcogenide heterostructures”. Van der Donck M, Peeters FM, Physical review B 98, 115104 (2018). http://doi.org/10.1103/PHYSREVB.98.115104
Abstract: Starting from the single-particle Dirac Hamiltonian for charge carriers in monolayer transition metal dichalcogenides (TMDs), we construct a four-band Hamiltonian describing interlayer excitons consisting of an electron in one TMD layer and a hole in the other TMD layer. An expression for the electron-hole interaction potential is derived, taking into account the effect of the dielectric environment above, below, and between the two TMD layers as well as polarization effects in the transition metal layer and in the chalcogen layers of the TMD layers. We calculate the interlayer exciton binding energy and average in-plane interparticle distance for different TMD heterostructures. The effect of different dielectric environments on the exciton binding energy is investigated and a remarkable dependence on the dielectric constant of the barrier between the two layers is found, resulting from competing effects as a function of the in-plane and out-of-plane dielectric constants of the barrier. The polarization effects in the chalcogen layers, which in general reduce the exciton binding energy, can lead to an increase in binding energy in the presence of strong substrate effects by screening the substrate. The excitonic absorbance spectrum is calculated and we show that the interlayer exciton peak depends linearly on a perpendicular electric field, which agrees with recent experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PHYSREVB.98.115104
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“Sustainable value assessment of farms using frontier efficiency benchmarks”. Van Passel S, Van Huylenbroeck G, Lauwers L, Mathijs E, Journal Of Environmental Management 90, 3057 (2009). http://doi.org/10.1016/J.JENVMAN.2009.04.009
Abstract: Appropriate assessment of firm sustainability facilitates actor-driven processes towards sustainable development. The methodology in this paper builds further on two proven methodologies for the assessment of sustainability performance: it combines the sustainable value approach with frontier efficiency benchmarks. The sustainable value methodology tries to relate firm performance to the use of different resources. This approach assesses contributions to corporate sustainability by comparing firm resource productivity with the resource productivity of a benchmark, and this for all resources considered. The efficiency is calculated by estimating the production frontier indicating the maximum feasible production possibilities. In this research, the sustainable value approach is combined with efficiency analysis methods to benchmark sustainability assessment. In this way, the production theoretical underpinnings of efficiency analysis enrich the sustainable value approach. The methodology is presented using two different functional forms: the CobbDouglas and the translog functional forms. The simplicity of the CobbDouglas functional form as benchmark is very attractive but it lacks flexibility. The translog functional form is more flexible but has the disadvantage that it requires a lot of data to avoid estimation problems. Using frontier methods for deriving firm specific benchmarks has the advantage that the particular situation of each company is taken into account when assessing sustainability. Finally, we showed that the methodology can be used as an integrative sustainability assessment tool for policy measures.
Keywords: A1 Journal article; Economics
Impact Factor: 4.01
Times cited: 41
DOI: 10.1016/J.JENVMAN.2009.04.009
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“Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach”. Vandenberghe W, Sorée B, Magnus W, Fischetti MV, Journal of applied physics 109, 124503 (2011). http://doi.org/10.1063/1.3595672
Abstract: A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electron-phonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single particle spectral functions is provided, enabling the evaluation of the Zener tunneling current under any three-dimensional potential profile. For a one-dimensional potential profile an analytical expression is obtained for the current in a bulk semiconductor, a semiconductor under uniform field, and a semiconductor under a non-uniform field using the WKB (Wentzel-Kramers-Brillouin) approximation. The obtained results agree with the Kane result in the low field limit. A numerical example for abrupt p-n diodes with different doping concentrations is given, from which it can be seen that the uniform field model is a better approximation than the WKB model, but a direct numerical treatment is required for low bias conditions.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 41
DOI: 10.1063/1.3595672
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“Fe and Co nanowires and nanotubes synthesized by template electrodeposition: a HRTEM and EELS study”. Verbeeck J, Lebedev OI, Van Tendeloo G, Cagnon L, Bougerol C, Tourillon T, Journal of the electrochemical society 150, E468 (2003). http://doi.org/10.1149/1.1601230
Abstract: Co and Fe nanowires and/or nanotubes are electrochemically synthesized through nanoporous membranes. By combining high-resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS), and energy filtered TEM techniques, their structural and crystallographic characteristics are precisely determined. The synthesis was shown to produce cigar-shaped single monocrystalline Co and Fe nanowires with a diameter of about 60 nm. All wires were surrounded by an epitaxial oxide layer (Co3O4 or Fe3O4) of roughly 10 nm. The Fe nanotubes were built up of Fe3O4 nanocrystals. Electron diffraction showed that all nanocrystals had a common crystallographic axis, creating a pseudomonocrystalline wall in the nanotubes. (C) 2003 The Electrochemical Society.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.259
Times cited: 41
DOI: 10.1149/1.1601230
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“Electronic and vibrational properties of PbI2: From bulk to monolayer”. Yagmurcukardes M, Peeters FM, Sahin H, Physical review B 98, 085431 (2018). http://doi.org/10.1103/PHYSREVB.98.085431
Abstract: Using first-principles calculations, we study the dependence of the electronic and vibrational properties of multilayered PbI2 crystals on the number of layers and focus on the electronic-band structure and the Raman spectrum. Electronic-band structure calculations reveal that the direct or indirect semiconducting behavior of PbI2 is strongly influenced by the number of layers. We find that at 3L thickness there is a direct-to-indirect band gap transition (from bulk-to-monolayer). It is shown that in the Raman spectrum two prominent peaks, A(1g) and E-g, exhibit phonon hardening with an increasing number of layers due to the interlayer van der Waals interaction. Moreover, the Raman activity of the A(1g) mode significantly increases with an increasing number of layers due to the enhanced out-of-plane dielectric constant in the few-layer case. We further characterize rigid-layer vibrations of low-frequency interlayer shear (C) and breathing (LB) modes in few-layer PbI2. A reduced monatomic (linear) chain model (LCM) provides a fairly accurate picture of the number of layers dependence of the low-frequency modes and it is shown also to be a powerful tool to study the interlayer coupling strength in layered PbI2.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PHYSREVB.98.085431
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“Electron acceleration by an intense short-pulse laser in underdense plasma”. Yu MY, Yu W, Chen ZY, Zhang J, Yin Y, Cao LH, Lu PX, Xu ZZ, Physics of plasmas 10, 2468 (2003). http://doi.org/10.1063/1.1572158
Abstract: Electron acceleration from the interaction of an intense short-pulse laser with low density plasma is considered. The relation between direct electron acceleration within the laser pulse and that in the wake is investigated analytically. The magnitude and location of the ponderomotive-force-caused charge separation field with respect to that of the pulse determine the relative effectiveness of the two acceleration mechanisms. It is shown that there is an optimum condition for acceleration in the wake. Electron acceleration within the pulse dominates as the pulse becomes sufficiently short, and the latter directly drives and even traps the electrons. The latter can reach ultrahigh energies and can be extracted by impinging the pulse on a solid target. (C) 2003 American Institute of Physics.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.115
Times cited: 41
DOI: 10.1063/1.1572158
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“Substrate-induced chiral states in graphene”. Zarenia M, Leenaerts O, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 86, 085451 (2012). http://doi.org/10.1103/PhysRevB.86.085451
Abstract: Unidirectional chiral states are predicted in single layer graphene which originate from the breaking of the sublattice symmetry due to an asymmetric mass potential. The latter can be created experimentally using boron-nitride (BN) substrates with a line defect (B-B or N-N) that changes the induced mass potential in graphene. Solving the Dirac-Weyl equation, the obtained energy spectrum is compared with the one calculated using ab initio density functional calculations. We found that these one-dimensional chiral states are very robust and they can even exist in the presence of a small gap between the mass regions. In the latter case additional bound states are found that are topologically different from those chiral states.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.86.085451
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