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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J. |
In situ HREM study of electron irradiation effects in AgCl microcrystals |
1992 |
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UA library record |
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Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
2001 |
Journal of materials research |
16 |
4 |
UA library record; WoS full record; WoS citing articles |
|
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Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate |
1996 |
Applied surface science |
102 |
9 |
UA library record; WoS full record; WoS citing articles |
|
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Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
Structural characterisation of erbium silicide thin films of an Si(111) substrate |
1996 |
Journal of alloys and compounds |
234 |
14 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
New erbium silicide superstructures: a study by high resolution electron microscopy |
1996 |
Physica status solidi: A: applied research |
158 |
6 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
1998 |
Applied physics letters |
72 |
16 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction |
1997 |
Journal of crystal growth |
172 |
29 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
120 |
2 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of β-SiC at 9500C and structural characterization |
1996 |
Nuclear instruments and methods in physics research |
B112 |
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UA library record |
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Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
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Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
2000 |
Sensors and actuators : B : chemical |
68 |
51 |
UA library record; WoS full record; WoS citing articles |
|
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Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Nuclear instruments and methods in physics research |
B112 |
4 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. |
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Materials Research Society symposium proceedings |
404 |
1 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
2000 |
Physical review : B : condensed matter and materials physics |
61 |
27 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
1997 |
Conference series of the Institute of Physics |
157 |
1 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
1999 |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
1999 |
Physica status solidi: A: applied research |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
|
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
1998 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
77 |
23 |
UA library record; WoS full record; WoS citing articles |
|
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Fanidis, C.; van Dyck, D.; van Landuyt, J. |
Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: 1: theoretical framework |
1992 |
Ultramicroscopy |
41 |
17 |
UA library record; WoS full record; WoS citing articles |
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Fanidis, C.; van Dyck, D.; van Landuyt, J. |
Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: part 2: solution of the equations and applications to concrete cases |
1993 |
Ultramicroscopy |
48 |
6 |
UA library record; WoS full record; WoS citing articles |
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Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
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Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
600 |
32 |
UA library record; WoS full record; WoS citing articles |
|
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Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
Defects in high-dose oxygen implanted silicon : a TEM study |
1991 |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
42 |
4 |
UA library record; WoS full record; WoS citing articles |
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De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. |
On the interpretation of HREM images of partially ordered alloys |
1995 |
Ultramicroscopy |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
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De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. |
Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy |
1993 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
67 |
1 |
UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles |
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De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
Direct observation of clusters in some FCC alloys by HREM |
1994 |
Icem |
13 |
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UA library record; WoS full record; |
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