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“Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces”. van Thiel T c, Brzezicki W, Autieri C, Hortensius J r, Afanasiev D, Gauquelin N, Jannis D, Janssen N, Groenendijk D j, Fatermans J, Van Aert S, Verbeeck J, Cuoco M, Caviglia A d, Physical Review Letters 127, 127202 (2021). http://doi.org/10.1103/PhysRevLett.127.127202
Abstract: In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion symmetry across the heterointerfaces. A notable example is the interface between polar and nonpolar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way for the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wave functions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO3, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and
LaAlO3, a polar wide-band-gap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO2/SrO interface configuration, leading to excess charge being pinned near the LaAlO3/SrRuO3 interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction drives a reorganization of the topological charges in the band structure, thereby modifying the momentum-space Berry curvature in SrRuO3. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 17
DOI: 10.1103/PhysRevLett.127.127202
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“Co-Rich ZnCoO Nanoparticles Embedded in Wurtzite Zn1-xCoxO Thin Films: Possible Origin of Superconductivity”. Zeng Y-J, Gauquelin N, Li D-Y, Ruan S-C, He H-P, Egoavil R, Ye Z-Z, Verbeeck J, Hadermann J, Van Bael MJ, Van Haesendonck C, ACS applied materials and interfaces 7, 22166 (2015). http://doi.org/10.1021/acsami.5b06363
Abstract: Co-rich ZnCoO nanoparticles embedded in wurtzite Zn0.7Co0.3O thin films are grown by pulsed laser deposition on a Si substrate. Local superconductivity with an onset Tc at 5.9 K is demonstrated in the hybrid system. The unexpected superconductivity probably results from Co(3+) in the Co-rich ZnCoO nanoparticles or from the interface between the Co-rich nanoparticles and the Zn0.7Co0.3O matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 13
DOI: 10.1021/acsami.5b06363
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“Structure-property relations of methylamine vapor treated hybrid perovskite CH3NH3PbI3 films and solar cells”. Conings B, Bretschneider SA, Babayigit A, Gauquelin N, Cardinaletti I, Manca JV, Verbeeck J, Snaith HJ, Boyen H-G, ACS applied materials and interfaces 9, 8092 (2017). http://doi.org/10.1021/acsami.6b15175
Abstract: The power conversion efficiency of halide perovskite solar cells is heavily dependent on the perovskite layer being sufficiently smooth and pinhole-free. It has been shown that these features can be obtained even when starting out from rough and discontinuous perovskite film, by briefly exposing it to methylamine (MA) vapor. The exact underlying physical mechanisms of this phenomenon are, however, still unclear. By investigating smooth, MA treated films, based on very rough and discontinuous reference films of methylammonium triiode (MAPbI3), considering their morphology, crystalline features, local conductive properties, and charge carrier lifetime, we unravel the relation between their characteristic physical qualities and their performance in corresponding solar cells. We discover that the extensive improvement in photovoltaic performance upon MA treatment is a consequence of the induced morphological enhancement of the perovskite layer, together with improved electron injection into TiO2, which in fact compensates for an otherwise compromised bulk electronic quality, simultaneously caused by the MA treatment.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 43
DOI: 10.1021/acsami.6b15175
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“One step toward a new generation of C-MOS compatible oxide p-n junctions: Structure of the LSMO/ZnO interface elucidated by an experimental and theoretical synergic work”. Pullini D, Sgroi M, Mahmoud A, Gauquelin N, Maschio L, Lorenzo-Ferrari AM, Groenen R, Damen C, Rijnders G, van den Bos KHW, Van Aert S, Verbeeck J, ACS applied materials and interfaces 9, 20974 (2017). http://doi.org/10.1021/acsami.7b04089
Abstract: Heterostructures formed by La0.7Sr0.3MnO3/ZnO (LSMO/ZnO) interfaces exhibit extremely interesting electronic properties making them promising candidates for novel oxide p–n junctions, with multifunctional features. In this work, the structure of the interface is studied through a combined experimental/theoretical approach. Heterostructures were grown epitaxially and homogeneously on 4″ silicon wafers, characterized by advanced electron microscopy imaging and spectroscopy and simulated by ab initio density functional theory calculations. The simulation results suggest that the most stable interface configuration is composed of the (001) face of LSMO, with the LaO planes exposed, in contact with the (112̅0) face of ZnO. The ab initio predictions agree well with experimental high-angle annular dark field scanning transmission electron microscopy images and confirm the validity of the suggested structural model. Electron energy loss spectroscopy confirms the atomic sharpness of the interface. From statistical parameter estimation theory, it has been found that the distances between the interfacial planes are displaced from the respective ones of the bulk material. This can be ascribed to the strain induced by the mismatch between the lattices of the two materials employed
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 4
DOI: 10.1021/acsami.7b04089
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“Chemical insight into electroforming of resistive switching manganite heterostructures”. Borgatti F, Park C, Herpers A, Offi F, Egoavil R, Yamashita Y, Yang A, Kobata M, Kobayashi K, Verbeeck J, Panaccione G, Dittmann R;, Nanoscale 5, 3954 (2013). http://doi.org/10.1039/c3nr00106g
Abstract: We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as non-volatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictly correlated with the oxidation of the top electrode Ti layer through field-induced electromigration of oxygen ions. Conversely, PCMO exhibits oxygen depletion and downward change of the chemical potential for both resistive states. Impedance spectroscopy analysis, supported by the detailed knowledge of these effects, provides an accurate model description of the device resistive behaviour. The main contributions to the change of resistance from the as-prepared (low resistance) to the electroformed (high resistance) states are respectively due to reduced PCMO at the boundary with the Ti electrode and to the formation of an anisotropic np junction between the Ti and the PCMO layers.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 40
DOI: 10.1039/c3nr00106g
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“Local boron environment in B-doped nanocrystalline diamond films”. Turner S, Lu Y-G, Janssens SD, da Pieve F, Lamoen D, Verbeeck J, Haenen K, Wagner P, Van Tendeloo G, Nanoscale 4, 5960 (2012). http://doi.org/10.1039/c2nr31530k
Abstract: Thin films of heavily B-doped nanocrystalline diamond (B:NCD) have been investigated by a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy performed on a state-of-the-art aberration corrected instrument to determine the B concentration, distribution and the local B environment. Concentrations of [similar]1 to 3 at.% of boron are found to be embedded within individual grains. Even though most NCD grains are surrounded by a thin amorphous shell, elemental mapping of the B and C signal shows no preferential embedding of B in these amorphous shells or in grain boundaries between the NCD grains, in contrast with earlier work on more macroscopic superconducting polycrystalline B-doped diamond films. Detailed inspection of the fine structure of the boron K-edge and comparison with density functional theory calculated fine structure energy-loss near-edge structure signatures confirms that the B atoms present in the diamond grains are substitutional atoms embedded tetrahedrally into the diamond lattice.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 39
DOI: 10.1039/c2nr31530k
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“High resolution mapping of surface reduction in ceria nanoparticles”. Turner S, Lazar S, Freitag B, Egoavil R, Verbeeck J, Put S, Strauven Y, Van Tendeloo G, Nanoscale 3, 3385 (2011). http://doi.org/10.1039/c1nr10510h
Abstract: Surface reduction of ceria nano octahedra with predominant {111} and {100} type surfaces is studied using a combination of aberration-corrected Transmission Electron Microscopy (TEM) and spatially resolved electron energy-loss spectroscopy (EELS) at high energy resolution and atomic spatial resolution. The valency of cerium ions at the surface of the nanoparticles is mapped using the fine structure of the Ce M4,5 edge as a fingerprint. The valency of the surface cerium ions is found to change from 4+ to 3+ owing to oxygen deficiency (vacancies) close to the surface. The thickness of this Ce3+ shell is measured using atomic-resolution Scanning Transmission Electron Microscopy (STEM)-EELS mapping over a {111} surface (the predominant facet for this ceria morphology), {111} type surface island steps and {100} terminating planes. For the {111} facets and for {111} surface islands, the reduction shell is found to extend over a single fully reduced surface plane and 12 underlying mixed valency planes. For the {100} facets the reduction shell extends over a larger area of 56 oxygen vacancy-rich planes. This finding provides a plausible explanation for the higher catalytic activity of the {100} surface facets in ceria.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 127
DOI: 10.1039/c1nr10510h
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“Direct imaging of boron segregation at dislocations in B:diamond heteroepitaxial films”. Turner S, Idrissi H, Sartori AF, Korneychuck S, Lu Y-G, Verbeeck J, Schreck M, Van Tendeloo G, Nanoscale 8, 2212 (2016). http://doi.org/10.1039/c5nr07535a
Abstract: A thin film of heavily B-doped diamond has been grown epitaxially by microwave plasma chemical vapor deposition on an undoped diamond layer, on top of a Ir/YSZ/Si(001) substrate stack, to study the boron segregation and boron environment at the dislocations present in the film. The density and nature of the dislocations were investigated by conventional and weak-beam dark-field transmission electron microscopy techniques, revealing the presence of two types of dislocations: edge and mixed-type 45 degrees dislocations. The presence and distribution of B in the sample was studied using annular dark-field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy. Using these techniques, a segregation of B at the dislocations in the film is evidenced, which is shown to be intermittent along the dislocation. A single edge-type dislocation was selected to study the distribution of the boron surrounding the dislocation core. By imaging this defect at atomic resolution, the boron is revealed to segregate towards the tensile strain field surrounding the edge-type dislocations. An investigation of the fine structure of the B-K edge at the dislocation core shows that the boron is partially substitutionally incorporated into the diamond lattice and partially present in a lower coordination (sp(2)-like hybridization).
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 15
DOI: 10.1039/c5nr07535a
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“High-performance supercabatteries using graphite@diamond nano-needle capacitor electrodes and redox electrolytes”. Yu S, Sankaran KJ, Korneychuk S, Verbeeck J, Haenen K, Jiang X, Yang N, Nanoscale 11, 17939 (2019). http://doi.org/10.1039/C9NR07037K
Abstract: Supercabatteries have the characteristics of supercapacitors and batteries, namely high power and energy densities as well as long cycle life. To construct them, capacitor electrodes with wide potential windows and/or redox electrolytes are required. Herein, graphite@diamond nano-needles and an aqueous solution of Fe(CN)(6)(3-/4-) are utilized as the capacitor electrode and the electrolyte, respectively. This diamond capacitor electrode has a nitrogen-doped diamond core and a nano-graphitic shell. In 0.05 M Fe(CN)(6)(3-/4-) + 1.0 M Na2SO4 aqueous solution, the fabricated supercabattery has a capacitance of 66.65 mF cm(-2) at a scan rate of 10 mV s(-1). It is stable over 10 000 charge/discharge cycles. The symmetric supercabattery device assembled using a two-electrode system possesses energy and power densities of 10.40 W h kg(-1) and 6.96 kW kg(-1), respectively. These values are comparable to those of other energy storage devices. Therefore, diamond supercabatteries are promising for many industrial applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 26
DOI: 10.1039/C9NR07037K
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“Au-manganese oxide nanostructures by a plasma-assisted process as electrocatalysts for oxygen evolution : a chemico-physical investigation”. Bigiani L, Gasparotto A, Andreu T, Verbeeck J, Sada C, Modin E, Lebedev OI, Morante JR, Barreca D, Maccato C, Advanced sustainable systems , 2000177 (2020). http://doi.org/10.1002/ADSU.202000177
Abstract: Earth-abundant and eco-friendly manganese oxides are promising platforms for the oxygen evolution reaction (OER) in water electrolysis. Herein, a versatile and potentially scalable route to gold-decorated manganese oxide-based OER electrocatalysts is reported. In particular, MnxOy(MnO2, Mn2O3) host matrices are grown on conductive glasses by plasma assisted-chemical vapor deposition (PA-CVD), and subsequently functionalized with gold nanoparticles (guest) as OER activators by radio frequency (RF)-sputtering. The final selective obtainment of MnO2- or Mn2O3-based systems is then enabled by annealing under oxidizing or inert atmosphere, respectively. A detailed material characterization evidences the formation of high-purity Mn(x)O(y)dendritic nanostructures with an open morphology and an efficient guest dispersion into the host matrices. The tailoring of Mn(x)O(y)phase composition and host-guest interactions has a remarkable influence on OER activity yielding, for the best performing Au/Mn(2)O(3)system, a current density of approximate to 5 mA cm(-2)at 1.65 V versus the reversible hydrogen electrode (RHE) and an overpotential close to 300 mV at 1 mA cm(-2). Such results, comparing favorably with literature data on manganese oxide-based materials, highlight the importance of compositional control, as well as of surface and interface engineering, to develop low-cost and efficient anode nanocatalysts for water splitting applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.1
Times cited: 4
DOI: 10.1002/ADSU.202000177
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“In Situ Plasma Studies Using a Direct Current Microplasma in a Scanning Electron Microscope”. Grünewald L, Chezganov D, De Meyer R, Orekhov A, Van Aert S, Bogaerts A, Bals S, Verbeeck J, Advanced Materials Technologies (2024). http://doi.org/10.1002/admt.202301632
Abstract: Microplasmas can be used for a wide range of technological applications and to improve the understanding of fundamental physics. Scanning electron microscopy, on the other hand, provides insights into the sample morphology and chemistry of materials from the mm‐ down to the nm‐scale. Combining both would provide direct insight into plasma‐sample interactions in real‐time and at high spatial resolution. Up till now, very few attempts in this direction have been made, and significant challenges remain. This work presents a stable direct current glow discharge microplasma setup built inside a scanning electron microscope. The experimental setup is capable of real‐time in situ imaging of the sample evolution during plasma operation and it demonstrates localized sputtering and sample oxidation. Further, the experimental parameters such as varying gas mixtures, electrode polarity, and field strength are explored and experimental<italic>V</italic>–<italic>I</italic>curves under various conditions are provided. These results demonstrate the capabilities of this setup in potential investigations of plasma physics, plasma‐surface interactions, and materials science and its practical applications. The presented setup shows the potential to have several technological applications, for example, to locally modify the sample surface (e.g., local oxidation and ion implantation for nanotechnology applications) on the µm‐scale.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Impact Factor: 6.8
DOI: 10.1002/admt.202301632
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“Functionalization of graphitic carbon nitride systems by cobalt and cobalt-iron oxides boosts solar water oxidation performances”. Benedet M, Andrea Rizzi G, Gasparotto A, Gauquelin N, Orekhov A, Verbeeck J, Maccato C, Barreca D, Applied surface science 618, 156652 (2023). http://doi.org/10.1016/j.apsusc.2023.156652
Abstract: The ever-increasing energy demand from the world population has made the intensive use of fossil fuels an overarching threat to global environment and human health. An appealing alternative is offered by sunlight-assisted photoelectrochemical water splitting to yield carbon-free hydrogen fuel, but kinetic limitations associated to the oxygen evolution reaction (OER) render the development of cost-effective, eco-friendly and stable electrocatalysts an imperative issue. In the present work, OER catalysts based on graphitic carbon nitride (g-C3N4) were deposited on conducting glass substrates by a simple decantation procedure, followed by functionalization with low amounts of nanostructured CoO and CoFe2O4 by radio frequency (RF)-sputtering, and final annealing under inert atmosphere. A combination of advanced characterization tools was used to investigate the interplay between material features and electrochemical performances. The obtained results highlighted the formation of a p-n junction for the g-C3N4-CoO system, whereas a Z-scheme junction accounted for the remarkable performance enhancement yielded by g-C3N4-CoFe2O4. The intimate contact between the system components also afforded an improved electrocatalyst stability in comparison to various bare and functionalized g-C3N4-based systems. These findings emphasize the importance of tailoring g-C3N4 chemico-physical properties through the dispersion of complementary catalysts to fully exploit its applicative potential.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.7
Times cited: 11
DOI: 10.1016/j.apsusc.2023.156652
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“Synthesis &ndash, properties correlation and the unexpected role of the titania support on the Grignard surface modification”. Van Dijck JG, Mampuys P, Ching HYV, Krishnan D, Baert K, Hauffman T, Verbeeck J, Van Doorslaer S, Maes BUW, Dorbec M, Buekenhoudt A, Meynen V, Applied Surface Science 527, 146851 (2020). http://doi.org/10.1016/J.APSUSC.2020.146851
Abstract: While the impact of reaction conditions on surface modification with Grignard reactants has been studied for silica supports, such information is absent for metal oxides like titania. Differences between modified titania and silica are observed, making it paramount to explore the reaction mechanism. A detailed study on the impact of the reaction conditions is reported, with a focus on the chain length of the alkyl Grignard reactant, its concentration, the reaction time and temperature, and the type of titania support. While the increase in the chain length reduces the amount of organic groups on the surface, the concentration, time and temperature show little/no influence on the modification degree. However, the type of titania support used and the percentage of amorphous phase present has a significant impact on the amount of grafted groups. Even though the temperature and concentration show no clear impact on the modification degree, they can cause changes in the surface hydroxyl population, which are thus not linked to the modification degree. Furthermore, the titania support is reduced during functionalization. This reduction dependents on the reaction temperature, the titania support and the chain length of the Grignard reactant. Similarly, this reduction is not linked to the modification degree.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA); Organic synthesis (ORSY); Applied Electrochemistry & Catalysis (ELCAT)
Impact Factor: 6.7
Times cited: 5
DOI: 10.1016/J.APSUSC.2020.146851
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“Growth mechanism of epitaxial SrTiO3 on a (1 x 2) + (2 x 1) reconstructed Sr(1/2 ML)/Si(001) surface”. Spreitzer M, Klement D, Egoavil R, Verbeeck J, Kovac J, Zaloznik A, Koster G, Van Tendeloo G, Suvorov D, Rijnders G, Journal Of Materials Chemistry C 8, 518 (2020). http://doi.org/10.1039/C9TC04092G
Abstract: Sub-monolayer control over the growth at silicon-oxide interfaces is a prerequisite for epitaxial integration of complex oxides with the Si platform, enriching it with a variety of functionalities. However, the control over this integration is hindered by the intense reaction of the constituents. The most suitable buffer material for Si passivation is metallic strontium. When it is overgrown with a layer of SrTiO3 (STO) it can serve as a pseudo-substrate for the integration with functional oxides. In our study we determined a mechanism for epitaxial integration of STO with a (1 x 2) + (2 x 1) reconstructed Sr(1/2 ML)/Si(001) surface using all-pulsed laser deposition (PLD) technology. A detailed analysis of the initial deposition parameters was performed, which enabled us to develop a complete protocol for integration, taking into account the peculiarities of the PLD growth, STO critical thickness, and process thermal budget, in order to kinetically trap the reaction between STO and Si and thus to minimize the thickness of the interface layer. The as-prepared oxide layer exhibits STO(001)8Si(001) out-of-plane and STO[110]8Si[100] in-plane orientation and together with recent advances in large-scale PLD tools these results represent a new technological solution for the implementation of oxide electronics on demand.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.4
Times cited: 12
DOI: 10.1039/C9TC04092G
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“Boron-rich inclusions and boron distribution in HPHT polycrystalline superconducting diamond”. Lu Y-G, Turner S, Ekimov EA, Verbeeck J, Van Tendeloo G, Carbon 86, 156 (2015). http://doi.org/10.1016/j.carbon.2015.01.034
Abstract: Polycrystalline boron-doped superconducting diamond, synthesized at high pressure and high temperature (HPHT) via a reaction of a single piece of crystalline boron with monolithic graphite, has been investigated by analytical transmission electron microscopy. The local boron distribution and boron environment have been studied by a combination of (scanning) transmission electron microscopy ((S)TEM) and spatially resolved electron energy-loss spectroscopy (EELS). High resolution TEM imaging and EELS elemental mapping have established, for the first time, the presence of largely crystalline diamond-diamond grain boundaries within the material and have evidenced the presence of substitutional boron dopants within individual diamond grains. Confirmation of the presence of substitutional B dopants has been obtained through comparison of acquired boron K-edge EELS fine structures with known references. This confirmation is important to understand the origin of superconductivity in polycrystalline B-doped diamond. In addition to the substitutional boron doping, boron-rich inclusions and triple-points, both amorphous and crystalline, with chemical compositions close to boron carbide B4C, are evidenced. (C) 2015 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.337
Times cited: 20
DOI: 10.1016/j.carbon.2015.01.034
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Afanasov IM, Shornikova ON, Kirilenko DA, Vlasov II, Zhang L, Verbeeck J, Avdeev VV, Van Tendeloo G (2010) Graphite structural transformations during intercalation by HNO3 and exfoliation. Oxford, 1862–1865
Abstract: Expandable graphite of two types was synthesized by (1) hydrolysis of graphite nitrate of II stage and (2) anodic polarization of graphite in 60% HNO3. Exfoliated graphite samples were produced by thermal shock of expandable graphite samples in air at 900 °C. A comparative study of microstructural distinctions of both expandable and exfoliated graphite samples was carried out using X-ray diffraction, Raman spectroscopy, electron energy loss spectroscopy and high resolution transmission electron microscopy.
Keywords: L1 Letter to the editor; Electron microscopy for materials research (EMAT)
Impact Factor: 6.337
Times cited: 43
DOI: 10.1016/j.carbon.2010.01.055
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“Degradation process of lead chromate in paintings by Vincent van Gogh studied by means of spectromicroscopic methods : 3 : synthesis, characterization, and detection of different crystal forms of the chrome yellow pigment”. Monico L, Janssens K, Miliani C, Brunetti BG, Vagnini M, Vanmeert F, Falkenberg G, Abakumov A, Lu Y, Tian H, Verbeeck J, Radepont M, Cotte M, Hendriks E, Geldof M, van der Loeff L, Salvant J, Menu M;, Analytical chemistry 85, 860 (2013). http://doi.org/10.1021/ac302158b
Abstract: The painter, Vincent van Gogh, and some of his contemporaries frequently made use of the pigment chrome yellow that is known to show a tendency toward darkening. This pigment may correspond to various chemical compounds such as PbCrO4 and PbCr1-xSxO4, that may each be present in various crystallographic forms with different tendencies toward degradation. Investigations by X-ray diffraction (XRD), mid-Fourier Transform infrared (FTIR), and Raman instruments (benchtop and portable) and synchrotron radiation-based micro-XRD and X-ray absorption near edge structure spectroscopy performed on oil-paint models, prepared with in-house synthesized PbCrO4 and PbCr1-xSxO4, permitted us to characterize the spectroscopic features of the various forms. On the basis of these results, an extended study has been carried out on historic paint tubes and on embedded paint microsamples taken from yellow-orange/pale yellow areas of 12 Van Gogh paintings, demonstrating that Van Gogh effectively made use of different chrome yellow types. This conclusion was also confirmed by in situ mid-FTIR investigations on Van Goghs Portrait of Gauguin (Van Gogh Museum, Amsterdam).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 6.32
Times cited: 79
DOI: 10.1021/ac302158b
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“Degradation process of lead chromate in paintings by Vincent van Gogh studied by means of synchrotron X-ray spectromicroscopy and related methods : 1 : artificially aged model samples”. Monico L, van der Snickt G, Janssens K, de Nolf W, Miliani C, Verbeeck J, Tian H, Tan H, Dik J, Radepont M, Cotte M, Analytical chemistry 83, 1214 (2011). http://doi.org/10.1021/ac102424h
Abstract: On several paintings by artists of the end of the 19th century and the beginning of the 20th Century a darkening of the original yellow areas, painted with the chrome yellow pigment (PbCrO4, PbCrO4·xPbSO4, or PbCrO4·xPbO) is observed. The most famous of these are the various Sunflowers paintings Vincent van Gogh made during his career. In the first part of this work, we attempt to elucidate the degradation process of chrome yellow by studying artificially aged model samples. In view of the very thin (1−3 μm) alteration layers that are formed, high lateral resolution spectroscopic methods such as microscopic X-ray absorption near edge (μ-XANES), X-ray fluorescence spectrometry (μ-XRF), and electron energy loss spectrometry (EELS) were employed. Some of these use synchrotron radiation (SR). Additionally, microscopic SR X-ray diffraction (SR μ-XRD), μ-Raman, and mid-FTIR spectroscopy were employed to completely characterize the samples. The formation of Cr(III) compounds at the surface of the chrome yellow paint layers is particularly observed in one aged model sample taken from a historic paint tube (ca. 1914). About two-thirds of the chromium that is present at the surface has reduced from the hexavalent to the trivalent state. The EELS and μ-XANES spectra are consistent with the presence of Cr2O3·2H2O (viridian). Moreover, as demonstrated by μ-XANES, the presence of another Cr(III) compound, such as either Cr2(SO4)3·H2O or (CH3CO2)7Cr3(OH)2 [chromium(III) acetate hydroxide], is likely.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 6.32
Times cited: 113
DOI: 10.1021/ac102424h
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“Phase coexistence induced surface roughness in V2O3/Ni magnetic heterostructures”. Ignatova K, Vlasov E, Seddon SD, Gauquelin N, Verbeeck J, Wermeille D, Bals S, Hase TPA, Arnalds UB, APL Materials 12 (2024). http://doi.org/10.1063/5.0195961
Abstract: We present an investigation of the microstructure changes in V2O3 as it goes through its inherent structural phase transition. Using V2O3 films with a well-defined crystal structure deposited by reactive magnetron sputtering on r-plane Al2O3 substrates, we study the phase coexistence region and its impact on the surface roughness of the films and the magnetic properties of overlying Ni magnetic layers in V2O3/Ni hybrid magnetic heterostructures. The simultaneous presence of two phases in V2O3 during its structural phase transition was identified with high resolution x-ray diffraction and led to an increase in surface roughness observed using x-ray reflectivity. The roughness reaches its maximum at the midpoint of the transition. In V2O3/Ni hybrid heterostructures, we find a concomitant increase in the coercivity of the magnetic layer correlated with the increased roughness of the V2O3 surface. The chemical homogeneity of the V2O3 is confirmed through transmission electron microscopy analysis. High-angle annular dark field imaging and electron energy loss spectroscopy reveal an atomically flat interface between Al2O3 and V2O3, as well as a sharp interface between V2O3 and Ni.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Impact Factor: 6.1
DOI: 10.1063/5.0195961
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“Epitaxial growth of the candidate ferroelectric Rashba material SrBiO3by pulsed laser deposition”. Verdierre G, Gauquelin N, Jannis D, Birkhölzer YA, Mallik S, Verbeeck J, Bibes M, Koster G, APL materials 11, 031109 (2023). http://doi.org/10.1063/5.0138222
Abstract: Among oxides, bismuthates have been gaining much interest due to their unique features. In addition to their superconducting properties, they show potential for applications as topological insulators and as possible spin-to-charge converters. After being first investigated in their bulk form in the 1980s, bismuthates have been successfully grown as thin films. However, most efforts have focused on BaBiO<sub>3</sub>, with SrBiO<sub>3</sub>receiving only little attention. Here, we report the growth of epitaxial films of SrBiO<sub>3</sub>on both TiO<sub>2</sub>-terminated SrTiO<sub>3</sub>and NdO-terminated NdScO<sub>3</sub>substrates by pulsed laser deposition. SrBiO<sub>3</sub>has a pseudocubic lattice constant of ∼4.25 Å and grows relaxed on NdScO<sub>3</sub>. Counter-intuitively, it grows with a slight tensile strain on SrTiO<sub>3</sub>despite a large lattice mismatch, which should induce compressive strain. High-resolution transmission electron microscopy reveals that this occurs as a consequence of structural domain matching, with blocks of 10 SrBiO<sub>3</sub>unit planes matching blocks of 11 SrTiO<sub>3</sub>unit planes. This work provides a framework for the synthesis of high quality perovskite bismuthates films and for the understanding of their interface interactions with homostructural substrates.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 6.1
DOI: 10.1063/5.0138222
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“Induced giant piezoelectricity in centrosymmetric oxides”. Park D-s, Hadad M, Riemer LM, Ignatans R, Spirito D, Esposito V, Tileli V, Gauquelin N, Chezganov D, Jannis D, Verbeeck J, Gorfman S, Pryds N, Muralt P, Damjanovic D, Science 375, 653 (2022). http://doi.org/10.1126/science.abm7497
Abstract: Giant piezoelectricity can be induced in centrosymmetric oxides by controlling the long-range motion of oxygen vacancies.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 56.9
Times cited: 51
DOI: 10.1126/science.abm7497
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“Photoluminescence of germanium-vacancy centers in nanocrystalline diamond films : implications for quantum sensing applications”. Joy RM, Pobedinskas P, Bourgeois E, Chakraborty T, Goerlitz J, Herrmann D, Noel C, Heupel J, Jannis D, Gauquelin N, D'Haen J, Verbeeck J, Popov C, Houssiau L, Becher C, Nesladek M, Haenen K, ACS applied nano materials 7, 3873 (2024). http://doi.org/10.1021/ACSANM.3C05491
Abstract: Point defects in diamond, promising candidates for nanoscale pressure- and temperature-sensing applications, are potentially scalable in polycrystalline diamond fabricated using the microwave plasma-enhanced chemical vapor deposition (MW PE CVD) technique. However, this approach introduces residual stress in the diamond films, leading to variations in the characteristic zero phonon line (ZPL) of the point defect in diamond. Here, we report the effect of residual stress on germanium-vacancy (GeV) centers in MW PE CVD nanocrystalline diamond (NCD) films fabricated using single crystal Ge as the substrate and solid dopant source. GeV ensemble formation indicated by the zero phonon line (ZPL) at similar to 602 nm is confirmed by room temperature (RT) photoluminescence (PL) measurements. PL mapping results show spatial nonuniformity in GeV formation along with other defects, including silicon-vacancy centers in the diamond films. The residual stress in NCD results in shifts in the PL peak positions. By estimating a stress shift coefficient of (2.9 +/- 0.9) nm/GPa, the GeV PL peak position in the NCD film is determined to be between 598.7 and 603.2 nm. A larger ground state splitting due to the strain on a GeV-incorporated NCD pillar at a low temperature (10 K) is also reported. We also report the observation of intense ZPLs at RT that in some cases could be related to low Ge concentration and the surrounding crystalline environment. In addition, we also observe thicker microcrystalline diamond (MCD) films delaminate from the Ge substrate due to film residual stress and graphitic phase at the diamond/Ge substrate interface (confirmed by electron energy loss spectroscopy). Using this approach, a free-standing color center incorporated MCD film with dimensions up to 1 x 1 cm(2) is fabricated. Qualitative analysis using time-of-flight secondary ion mass spectroscopy reveals the presence of impurities, including Ge and silicon, in the MCD film. Our experimental results will provide insights into the scalability of GeV fabrication using the MW PE CVD technique and effectively implement NCD-based nanoscale-sensing applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.9
DOI: 10.1021/ACSANM.3C05491
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“Quantum wavefront shaping with a 48-element programmable phase plate for electrons”. Yu CP, Vega Ibañez F, Béché, A, Verbeeck J, SciPost Physics 15, 223 (2023). http://doi.org/10.21468/SciPostPhys.15.6.223
Abstract: We present a 48-element programmable phase plate for coherent electron waves produced by a combination of photolithography and focused ion beam. This brings the highly successful concept of wavefront shaping from light optics into the realm of electron optics and provides an important new degree of freedom to prepare electron quantum states. The phase plate chip is mounted on an aperture rod placed in the C2 plane of a transmission electron microscope operating in the 100-300 kV range. The phase plate's behavior is characterized by a Gerchberg-Saxton algorithm, showing a phase sensitivity of 0.075 rad/mV at 300 kV, with a phase resolution of approximately 3x10e−3π. In addition, we provide a brief overview of possible use cases and support it with both simulated and experimental results.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT)
Impact Factor: 5.5
Times cited: 1
DOI: 10.21468/SciPostPhys.15.6.223
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“Insights into the Photoelectrocatalytic Behavior of gCN-Based Anode Materials Supported on Ni Foams”. Benedoue S, Benedet M, Gasparotto A, Gauquelin N, Orekhov A, Verbeeck J, Seraglia R, Pagot G, Rizzi GA, Balzano V, Gavioli L, Noto VD, Barreca D, Maccato C, Nanomaterials 13, 1035 (2023). http://doi.org/10.3390/nano13061035
Abstract: Graphitic carbon nitride (gCN) is a promising n-type semiconductor widely investigated for photo-assisted water splitting, but less studied for the (photo)electrochemical degradation of aqueous organic pollutants. In these fields, attractive perspectives for advancements are offered by a proper engineering of the material properties, e.g., by depositing gCN onto conductive and porous scaffolds, tailoring its nanoscale morphology, and functionalizing it with suitable cocatalysts. The present study reports on a simple and easily controllable synthesis of gCN flakes on Ni foam substrates by electrophoretic deposition (EPD), and on their eventual decoration with Co-based cocatalysts [CoO, CoFe2O4, cobalt phosphate (CoPi)] via radio frequency (RF)-sputtering or electrodeposition. After examining the influence of processing conditions on the material characteristics, the developed systems are comparatively investigated as (photo)anodes for water splitting and photoelectrocatalysts for the degradation of a recalcitrant water pollutant [potassium hydrogen phthalate (KHP)]. The obtained results highlight that while gCN decoration with Co-based cocatalysts boosts water splitting performances, bare gCN as such is more efficient in KHP abatement, due to the occurrence of a different reaction mechanism. The related insights, provided by a multi-technique characterization, may provide valuable guidelines for the implementation of active nanomaterials in environmental remediation and sustainable solar-to-chemical energy conversion.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.3
Times cited: 3
DOI: 10.3390/nano13061035
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“Oxidation processes at the metal/oxide interface in CoFe2/CoFe2O4 bilayers deposited by pulsed laser deposition”. Viart N, Sayed Hassan R, Ulhaq-Bouillet C, Meny C, Panissod P, Loison JL, Versini G, Huber F, Pourroy G, Verbeeck J, Van Tendeloo G, Acta materialia 54, 191 (2006). http://doi.org/10.1016/j.actamat.2005.08.041
Abstract: CoFe2/CoFe2O4 bilayers were made by pulsed laser ablation of a CoFe2 target on Si(I 0 0) substrates. The metallic layer was deposited first, in vacuum. The oxide was then deposited in an oxidizing O-2:N-2 (20:80) atmosphere. Two different procedures were used for the introduction of the oxidizing atmosphere in the deposition chamber: the laser ablation of the target was either stopped (discontinuous deposition process) or maintained (continuous deposition process) during the 20 min necessary for the establishment of the desired O-2:N-2 pressure. In both cases, the different electronegativities of Fe and Co cause an important modification of the Fe/Co ratio at the metal/oxide interface, with a depletion of Fe in the metal region and of Co in the oxide region. In the continuous procedure, the combination of the kinetic energy given by the ablation process to the Fe and Co adatoms with the one they get from their different affinity towards oxidation allows the formation of a low roughness metal/oxide interface with a high (111) preferred orientation of the CoFe2O4 layer, an induced re-crystallisation of the metal layer underneath and an unusual antiferromagnetic metal/oxide magnetic coupling. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 5
DOI: 10.1016/j.actamat.2005.08.041
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“Direct nucleation of hexagonal boron nitride on diamond : crystalline properties of hBN nanowalls”. Hoang D-Q, Korneychuk S, Sankaran KJ, Pobedinskas P, Drijkoningen S, Turner S, Van Bael MK, Verbeeck J, Nicley SS, Haenen K, Acta materialia 127, 17 (2017). http://doi.org/10.1016/J.ACTAMAT2017.01.002
Abstract: Hexagonal boron nitride (hBN) nanowalls were deposited by unbalanced radio frequency sputtering on (100)-oriented silicon, nanocrystalline diamond films, and amorphous silicon nitride (Si3N4) membranes. The hBN nanowall structures were found to grow vertically with respect to the surface of all of the substrates. To provide further insight into the nucleation phase and possible lattice distortion of the deposited films, the structural properties of the different interfaces were characterized by transmission electron microscopy. For Si and Si3N4 substrates, turbostratic and amorphous BN phases form a clear transition zone between the substrate and the actual hBN phase of the bulk nanowalls. However, surprisingly, the presence of these phases was suppressed at the interface with a nanocrystalline diamond film, leading to a direct coupling of hBN with the diamond surface, independent of the vertical orientation of the diamond grain. To explain these observations, a growth mechanism is proposed in which the hydrogen terminated surface of the nanocrystalline diamond film leads to a rapid formation of the hBN phase during the initial stages of growth, contrary to the case of Si and Si3N4 substrates. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
DOI: 10.1016/J.ACTAMAT2017.01.002
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“Novel class of nanostructured metallic glass films with superior and tunable mechanical properties”. Ghidelli M, Orekhov A, Bassi AL, Terraneo G, Djemia P, Abadias G, Nord M, Béché, A, Gauquelin N, Verbeeck J, Raskin J-p, Schryvers D, Pardoen T, Idrissi H, Acta Materialia , 116955 (2021). http://doi.org/10.1016/j.actamat.2021.116955
Abstract: A novel class of nanostructured Zr50Cu50 (%at.) metallic glass films with superior and tunable mechanical
properties is produced by pulsed laser deposition. The process can be controlled to synthetize a wide
range of film microstructures including dense fully amorphous, amorphous embedded with nanocrystals
and amorphous nano-granular. A unique dense self-assembled nano-laminated atomic arrangement
characterized by alternating Cu-rich and Zr/O-rich nanolayers with different local chemical enrichment
and amorphous or amorphous-crystalline composite nanostructure has been discovered, while
significant in-plane clustering is reported for films synthetized at high deposition pressures. This unique
nanoarchitecture is at the basis of superior mechanical properties including large hardness and elastic
modulus up to 10 and 140 GPa, respectively and outstanding total elongation to failure (>9%), leading to
excellent strength/ductility balance, which can be tuned by playing with the film architecture. These
results pave the way to the synthesis of novel class of engineered nanostructured metallic glass films
with high structural performances attractive for a number of applications in microelectronics and
coating industry.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 27
DOI: 10.1016/j.actamat.2021.116955
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“Pulsed laser deposition of SrTiO3 on a H-terminated Si substrate”. Spreitzer M, Egoavil R, Verbeeck J, Blank DHA, Rijnders G, Journal of materials chemistry C : materials for optical and electronic devices 1, 5216 (2013). http://doi.org/10.1039/c3tc30913d
Abstract: Interfacing oxides with silicon is a long-standing problem related to the integration of multifunctional oxides with semiconductor devices and the replacement of SiO2 with high-k gate oxides. In our study, pulsed laser deposition was used to prepare a SrTiO3 (STO) thin film on a H-terminated Si substrate. The main purpose of our work was to verify the ability of H-termination against the oxidation of Si during the PLD process and to analyze the resulting interfaces. In the first part of the study, the STO was deposited directly on the Si, leading to the formation of a preferentially textured STO film with a (100) orientation. In the second part, SrO was used as a buffer layer, which enabled the partial epitaxial growth of STO with STO(110)parallel to Si(100) and STO[001]parallel to Si[001]. The change in the growth direction induced by the application of a SrO buffer was governed by the formation of a SrO(111) intermediate layer and subsequently by the minimization of the lattice misfit between the STO and the SrO. Under the investigated conditions, approximately 10 nm thick interfacial layers formed between the STO and the Si due to reactions between the deposited material and the underlying H-terminated Si. In the case of direct STO deposition, SiOx formed at the interface with the silicon, while in the case when SrO was used as a buffer, strontium silicate grew directly on the silicon, which improves the growth quality of the uppermost STO.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.256
Times cited: 23
DOI: 10.1039/c3tc30913d
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“Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices”. Wang J, Gauquelin N, Huijben M, Verbeeck J, Rijnders G, Koster G, Applied Physics Letters 117, 133105 (2020). http://doi.org/10.1063/5.0020615
Abstract: The metal-insulator transition (MIT) in strongly correlated oxides is a topic of great interest for its potential applications, such as Mott field effect transistors and sensors. We report that the MIT in high quality epitaxial SrVO3 (SVO) thin films is present as the film thickness is reduced, lowering the dimensionality of the system, and electron-electron correlations start to become the dominant interactions. The critical thickness of 3 u.c is achieved by avoiding effects due to off-stoichiometry using optimal growth conditions and excluding any surface effects by a STO capping layer. Compared to the single SVO thin films, conductivity enhancement in SVO/STO superlattices is observed. This can be explained by the interlayer coupling effect between SVO sublayers in the superlattices. Magnetoresistance and Hall measurements indicate that the dominant driving force of MIT is the electron–electron interaction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4
Times cited: 8
DOI: 10.1063/5.0020615
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“Production and application of electron vortex beams”. Verbeeck J, Tian H, Schattschneider P, Nature 467, 301 (2010). http://doi.org/10.1038/nature09366
Abstract: Vortex beams (also known as beams with a phase singularity) consist of spiralling wavefronts that give rise to angular momentum around the propagation direction. Vortex photon beams are widely used in applications such as optical tweezers to manipulate micrometre-sized particles and in micro-motors to provide angular momentum1, 2, improving channel capacity in optical3 and radio-wave4 information transfer, astrophysics5 and so on6. Very recently, an experimental realization of vortex beams formed of electrons was demonstrated7. Here we describe the creation of vortex electron beams, making use of a versatile holographic reconstruction technique in a transmission electron microscope. This technique is a reproducible method of creating vortex electron beams in a conventional electron microscope. We demonstrate how they may be used in electron energy-loss spectroscopy to detect the magnetic state of materials and describe their properties. Our results show that electron vortex beams hold promise for new applications, in particular for analysing and manipulating nanomaterials, and can be easily produced.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 40.137
Times cited: 626
DOI: 10.1038/nature09366
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