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“Perovskite-like Mn2O3 : a path to new manganites”. Ovsyannikov SV, Abakumov AM, Tsirlin AA, Schnelle W, Egoavil R, Verbeeck J, Van Tendeloo G, Glazyrin KV, Hanfland M, Dubrovinsky L, Angewandte Chemie 52, 1494 (2013). http://doi.org/10.1002/anie.201208553
Abstract: Korund-artiges ε-Mn2O3 und Perowskit-artiges ζ-Mn2O3, zwei neue Phasen von Mn2O3, wurden unter hohen Drücken bei hohen Temperaturen synthetisiert. Die Manganatome können vollständig die A- und B-Positionen der Perowskitstruktur besetzen. ζ-Mn2O3 (siehe Bild, A-Positionsordnung) enthält Mn in den drei Oxidationsstufen +II, +III und +IV.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
Times cited: 84
DOI: 10.1002/anie.201208553
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“Gallium oxide nanorods : novel, template-free synthesis and high catalytic activity in epoxidation reactions”. Lueangchaichaweng W, Brooks NR, Fiorilli S, Gobechiya E, Lin K, Li L, Parres-Esclapez S, Javon E, Bals S, Van Tendeloo G, Martens JA, Kirschhock CEA, Jacobs PA, Pescarmona PP;, Angewandte Chemie: international edition in English 53, 1585 (2014). http://doi.org/10.1002/anie.201308384
Abstract: Gallium oxide nanorods with unprecedented small dimensions (20-80nm length and 3-5nm width) were prepared using a novel, template-free synthesis method. This nanomaterial is an excellent heterogeneous catalyst for the sustainable epoxidation of alkenes with H2O2, rivaling the industrial benchmark microporous titanosilicate TS-1 with linear alkenes and being much superior with bulkier substrates. A thorough characterization study elucidated the correlation between the physicochemical properties of the gallium oxide nanorods and their catalytic performance, and underlined the importance of the nanorod morphology for generating a material with high specific surface area and a high number of accessible acid sites.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
Times cited: 61
DOI: 10.1002/anie.201308384
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“Trapping of Oxygen Vacancies at Crystallographic Shear Planes in Acceptor-Doped Pb-Based Ferroelectrics”. Batuk D, Batuk M, Tsirlin AA, Hadermann J, Abakumov AM, Angewandte Chemie: international edition in English 54, 14787 (2015). http://doi.org/10.1002/anie.201507729
Abstract: The defect chemistry of the ferroelectric material PbTiO3 after doping with Fe(III) acceptor ions is reported. Using advanced transmission electron microscopy and powder X-ray and neutron diffraction, we demonstrate that even at concentrations as low as circa 1.7% (material composition approximately ABO2.95), the oxygen vacancies are trapped into extended planar defects, specifically crystallographic shear planes. We investigate the evolution of these defects upon doping and unravel their detailed atomic structure using the formalism of superspace crystallography, thus unveiling their role in nonstoichiometry in the Pb-based perovskites.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
Times cited: 3
DOI: 10.1002/anie.201507729
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“Domain Selectivity in BiFeO3Thin Films by Modified Substrate Termination”. Solmaz A, Huijben M, Koster G, Egoavil R, Gauquelin N, Van Tendeloo G, Verbeeck J, Noheda B, Rijnders G, Advanced functional materials 26, 2882 (2016). http://doi.org/10.1002/adfm.201505065
Abstract: Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 34
DOI: 10.1002/adfm.201505065
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“Long-Range Domain Structure and Symmetry Engineering by Interfacial Oxygen Octahedral Coupling at Heterostructure Interface”. Liao Z, Green RJ, Gauquelin N, Macke S, Li L, Gonnissen J, Sutarto R, Houwman EP, Zhong Z, Van Aert S, Verbeeck J, Sawatzky GA, Huijben M, Koster G, Rijnders G, Advanced functional materials 26, 6627 (2016). http://doi.org/10.1002/adfm.201602155
Abstract: In epitaxial thin film systems, the crystal structure and its symmetry deviate from the bulk counterpart due to various mechanisms such as epitaxial strain and interfacial structural coupling, which is accompanyed by a change in their properties. In perovskite materials, the crystal symmetry can be described by rotations of sixfold coordinated transition metal oxygen octahedra, which are found to be altered at interfaces. Here, it is unraveled how the local oxygen octahedral coupling at perovskite heterostructural interfaces strongly influences the domain structure and symmetry of the epitaxial films resulting in design rules to induce various structures in thin films using carefully selected combinations of substrate/buffer/film. Very interestingly it is discovered that these combinations lead to structure changes throughout the full thickness of the film. The results provide a deep insight into understanding the origin of induced structures in a perovskite heterostructure and an intelligent route to achieve unique functional properties.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 23
DOI: 10.1002/adfm.201602155
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“Engineering properties by long range symmetry propagation initiated at perovskite heterostructure interface”. Liao ZL, Green RJ, Gauquelin N, Gonnissen J, Van Aert S, Verbeeck J, et al, Advanced functional materials , 1 (2016)
Abstract: In epitaxial thin film systems, the crystal structure and its symmetry deviate from the bulk counterpart due to various mechanisms such as epitaxial strain and interfacial structural coupling, which induce an accompanying change in their properties. In perovskite materials, the crystal symmetry can be described by rotations of 6-fold coordinated transition metal oxygen octahedra, which are found to be altered at interfaces. Here, we unravel how the local oxygen octahedral coupling (OOC) at perovskite heterostructural interfaces initiates a different symmetry in epitaxial films and provide design rules to induce various symmetries in thin films by careful selecting appropriate combinations of substrate/buffer/film. Very interestingly we discovered that these combinations lead to symmetry changes throughout the full thickness of the film. Our results provide a deep insight into understanding the origin of induced crystal symmetry in a perovskite heterostructure and an intelligent route to achieve unique functional properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
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“Nematic superconducting state in iron pnictide superconductors”. Li J, Pereira PJ, Yuan J, Lv Y-Y, Jiang M-P, Lu D, Lin Z-Q, Liu Y-J, Wang J-F, Li L, Ke X, Van Tendeloo G, Li M-Y, Feng H-L, Hatano T, Wang H-B, Wu P-H, Yamaura K, Takayama-Muromachi E, Vanacken J, Chibotaru LF, Moshchalkov VV, Nature communications 8, 1880 (2017). http://doi.org/10.1038/s41467-017-02016-y
Abstract: Nematic order often breaks the tetragonal symmetry of iron-based superconductors. It arises from regular structural transition or electronic instability in the normal phase. Here, we report the observation of a nematic superconducting state, by measuring the angular dependence of the in-plane and out-of-plane magnetoresistivity of Ba 0.5 K 0.5 Fe 2 As 2 single crystals. We find large twofold oscillations in the vicinity of the superconducting transition, when the direction of applied magnetic field is rotated within the basal plane. To avoid the influences from sample geometry or current flow direction, the sample was designed as Corbino-shape for in-plane and mesa-shape for out-of-plane measurements. Theoretical analysis shows that the nematic superconductivity arises from the weak mixture of the quasi-degenerate s-wave and d-wave components of the superconducting condensate, most probably induced by a weak anisotropy of stresses inherent to single crystals.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 8
DOI: 10.1038/s41467-017-02016-y
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“Self‐Assembly of Atomically Thin Chiral Copper Heterostructures Templated by Black Phosphorus”. Nerl HC, Pokle A, Jones L, Müller‐Caspary K, Bos KHW, Downing C, McCarthy EK, Gauquelin N, Ramasse QM, Lobato I, Daly D, Idrobo JC, Van Aert S, Van Tendeloo G, Sanvito S, Coleman JN, Cucinotta CS, Nicolosi V, Advanced functional materials 29, 1903120 (2019). http://doi.org/10.1002/adfm.201903120
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 1
DOI: 10.1002/adfm.201903120
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“Thickness dependent properties in oxide heterostructures driven by structurally induced metal-oxygen hybridization variations”. Liao Z, Gauquelin N, Green RJ, Macke S, Gonnissen J, Thomas S, Zhong Z, Li L, Si L, Van Aert S, Hansmann P, Held K, Xia J, Verbeeck J, Van Tendeloo G, Sawatzky GA, Koster G, Huijben M, Rijnders G, Advanced functional materials 27, 1606717 (2017). http://doi.org/10.1002/ADFM.201606717
Abstract: Thickness-driven electronic phase transitions are broadly observed in different types of functional perovskite heterostructures. However, uncertainty remains whether these effects are solely due to spatial confinement, broken symmetry, or rather to a change of structure with varying film thickness. Here, this study presents direct evidence for the relaxation of oxygen-2p and Mn-3d orbital (p-d) hybridization coupled to the layer-dependent octahedral tilts within a La2/3Sr1/3MnO3 film driven by interfacial octahedral coupling. An enhanced Curie temperature is achieved by reducing the octahedral tilting via interface structure engineering. Atomically resolved lattice, electronic, and magnetic structures together with X-ray absorption spectroscopy demonstrate the central role of thickness-dependent p-d hybridization in the widely observed dimensionality effects present in correlated oxide heterostructures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 55
DOI: 10.1002/ADFM.201606717
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“Interlayer affected diamond electrochemistry”. Chen X, Dong X, Zhang C, Zhu M, Ahmed E, Krishnamurthy G, Rouzbahani R, Pobedinskas P, Gauquelin N, Jannis D, Kaur K, Hafez AME, Thiel F, Bornemann R, Engelhard C, Schoenherr H, Verbeeck J, Haenen K, Jiang X, Yang N, Small methods , 2301774 (2024). http://doi.org/10.1002/SMTD.202301774
Abstract: Diamond electrochemistry is primarily influenced by quantities of sp3-carbon, surface terminations, and crystalline structure. In this work, a new dimension is introduced by investigating the effect of using substrate-interlayers for diamond growth. Boron and nitrogen co-doped nanocrystalline diamond (BNDD) films are grown on Si substrate without and with Ti and Ta as interlayers, named BNDD/Si, BNDD/Ti/Si, and BNDD/Ta/Ti/Si, respectively. After detailed characterization using microscopies, spectroscopies, electrochemical techniques, and density functional theory simulations, the relationship of composition, interfacial structure, charge transport, and electrochemical properties of the interface between diamond and metal is investigated. The BNDD/Ta/Ti/Si electrodes exhibit faster electron transfer processes than the other two diamond electrodes. The interlayer thus determines the intrinsic activity and reaction kinetics. The reduction in their barrier widths can be attributed to the formation of TaC, which facilitates carrier tunneling, and simultaneously increases the concentration of electrically active defects. As a case study, the BNDD/Ta/Ti/Si electrode is further employed to assemble a redox-electrolyte-based supercapacitor device with enhanced performance. In summary, the study not only sheds light on the intricate relationship between interlayer composition, charge transfer, and electrochemical performance but also demonstrates the potential of tailored interlayer design to unlock new capabilities in diamond-based electrochemical devices. Diamond electrochemistry is revealed to be affected by the interlayers between boron/nitrogen co-doped nanocrystalline diamond (BNDD) film and a Si substrate. A BNDD/Ta/Ti/Si electrode exhibits faster electron transfer processes and smaller electron transfer resistance of redox probes for [Fe(CN)6]3-/4- and [Ru(NH3)6]3+/2+ than the other electrodes, because the interlayer thus determines the intrinsic activity and reaction kinetics of diamond films. image
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.4
DOI: 10.1002/SMTD.202301774
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“Spatially controlled octahedral rotations and metal-insulator transitions in nickelate superlattices”. Chen B, Gauquelin N, Green RJ, Lee JH, Piamonteze C, Spreitzer M, Jannis D, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G, Nano Letters 21, 1295 (2021). http://doi.org/10.1021/ACS.NANOLETT.0C03850
Abstract: The properties of correlated oxides can be manipulated by forming short-period superlattices since the layer thicknesses are comparable with the typical length scales of the involved correlations and interface effects. Herein, we studied the metal-insulator transitions (MITs) in tetragonal NdNiO3/SrTiO3 superlattices by controlling the NdNiO3 layer thickness, n in the unit cell, spanning the length scale of the interfacial octahedral coupling. Scanning transmission electron microscopy reveals a crossover from a modulated octahedral superstructure at n = 8 to a uniform nontilt pattern at n = 4, accompanied by a drastically weakened insulating ground state. Upon further reducing n the predominant dimensionality effect continuously raises the MIT temperature, while leaving the antiferromagnetic transition temperature unaltered down to n = 2. Remarkably, the MIT can be enhanced by imposing a sufficiently large strain even with strongly suppressed octahedral rotations. Our results demonstrate the relevance for the control of oxide functionalities at reduced dimensions.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 19
DOI: 10.1021/ACS.NANOLETT.0C03850
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“Breakdown of universal scaling for nanometer-sized bubbles in graphene”. Villarreal R, Lin P-C, Faraji F, Hassani N, Bana H, Zarkua Z, Nair MN, Tsai H-C, Auge M, Junge F, Hofsaess HC, De Gendt S, De Feyter S, Brems S, Ahlgren EH, Neyts EC, Covaci L, Peeters FM, Neek-Amal M, Pereira LMC, Nano Letters 21, 8103 (2021). http://doi.org/10.1021/ACS.NANOLETT.1C02470
Abstract: We report the formation of nanobubbles on graphene with a radius of the order of 1 nm, using ultralow energy implantation of noble gas ions (He, Ne, Ar) into graphene grown on a Pt(111) surface. We show that the universal scaling of the aspect ratio, which has previously been established for larger bubbles, breaks down when the bubble radius approaches 1 nm, resulting in much larger aspect ratios. Moreover, we observe that the bubble stability and aspect ratio depend on the substrate onto which the graphene is grown (bubbles are stable for Pt but not for Cu) and trapped element. We interpret these dependencies in terms of the atomic compressibility of the noble gas as well as of the adhesion energies between graphene, the substrate, and trapped atoms.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 12.712
Times cited: 24
DOI: 10.1021/ACS.NANOLETT.1C02470
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“Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures”. Wu S, Luo X, Turner S, Peng H, Lin W, Ding J, David A, Wang B, Van Tendeloo G, Wang J, Wu T;, Physical review X 3, 041027 (2013). http://doi.org/10.1103/PhysRevX.3.041027
Abstract: Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the unconventional bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.789
Times cited: 77
DOI: 10.1103/PhysRevX.3.041027
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“Fluorinated heterometallic \beta-diketonates as volatile single-source precursors for the synthesis of low-valent mixed-metal fluorides”. Navulla A, Tsirlin AA, Abakumov AM, Shpanchenko RV, Zhang H, Dikarev EV, Journal of the American Chemical Society 133, 692 (2011). http://doi.org/10.1021/ja109128r
Abstract: Hexafluoroacetylacetonates that contain lead and divalent first-row transition metals, PbM(hfac)4 (M = Ni (1), Co (2), Mn (3), Fe (4), and Zn (5)), have been synthesized. Their heterometallic structures are held together by strong Lewis acid−base interactions between metal atoms and diketonate ligands acting in chelating−bridging fashion. Compounds 1−5 are highly volatile and decompose below 350 °C. Fluorinated heterometallic β-diketonates have been used for the first time as volatile single-source precursors for the preparation of mixed-metal fluorides. Complex fluorides of composition Pb2MF6 have been obtained by decomposition of 1−5 in a two-zone furnace under low-pressure nitrogen flow. Lead−transition metal fluorides conform to orthorhombically distorted Aurivillius-type structure with layers of corner-sharing [MF6] octahedra separated by α-PbO-type (Pb2F2) blocks. Pb2NiF6 and Pb2CoF6 were found to exhibit magnetic ordering below 80 and 43 K, respectively. The ordering is antiferromagnetic, with a weak, uncompensated moment due to the canting of spins. The Pb2MF6 fluorides represent a new class of prospective magnetoelectric materials combining transition metals and lone-pair main-group cations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 13.858
Times cited: 28
DOI: 10.1021/ja109128r
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“Electronic Coupling between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties”. Zhang L, Lin B-C, Wu Y-F, Wu H, Huang T-W, Chang C-R, Ke X, Kurttepeli M, Tendeloo GV, Xu J, Yu D, Liao Z-M, ACS nano 11, 6277 (2017). http://doi.org/10.1021/acsnano.7b02494
Abstract: It has been theoretically proposed that the spin textures of surface states in a topological insulator can be directly transferred to graphene by means of the proximity effect, which is very important for realizing the two-dimensional topological insulator based on graphene. Here we report the anomalous magnetotransport properties of graphene-topological insulator Bi2Se3 heterojunctions, which are sensitive to the electronic coupling between graphene and the topological surface state. The coupling between the p_z orbitals of graphene and the p orbitals of the surface states on the Bi2Se3 bottom surface can be enhanced by applying a perpendicular negative magnetic field, resulting in a giant negative magnetoresistance at the Dirac point up to about -91%. Obvious resistances dip in the transfer curve at the Dirac point is also observed in the hybrid devices, which is consistent with theoretical predictions of the distorted Dirac bands with nontrivial spin textures inherited from the Bi2Se3 surface states.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 13.942
Times cited: 12
DOI: 10.1021/acsnano.7b02494
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“Single-walled carbon nanotube reactor for redox transformation of mercury dichloride”. Fedoseeva YV, Orekhov AS, Chekhova GN, Koroteev VO, Kanygin MA, Seovskiy BV, Chuvilin A, Pontiroli D, Ricco M, Bulusheva LG, Okotrub AV, ACS nano 11, 8643 (2017). http://doi.org/10.1021/ACSNANO.7B04361
Abstract: <script type='text/javascript'>document.write(unpmarked('Single-walled carbon nanotubes (SWCNTs) possessing a confined inner space protected by chemically resistant shells are promising for delivery, storage, and desorption of various compounds, as well as carrying out specific reactions. Here, we show that SWCNTs interact with molten mercury dichloride (HgCl2) and guide its transformation into dimercury dichloride (Hg2Cl2) in the cavity. The chemical state of host SWCNTs remains almost unchanged except for a small p-doping from the guest Hg2Cl2 nanocrystals. The density functional theory calculations reveal that the encapsulated HgCl2 molecules become negatively charged and start interacting via chlorine bridges when local concentration increases. This reduces the bonding strength in HgCl2, which facilitates removal of chlorine, finally leading to formation of Hg2Cl2 species. The present work demonstrates that SWCNTs not only serve as a template for growing nanocrystals but also behave as an electron-transfer catalyst in the spatially confined redox reaction by donation of electron density for temporary use by the guests.'));
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 13.942
Times cited: 11
DOI: 10.1021/ACSNANO.7B04361
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“State of the art and prospects for Halide Perovskite Nanocrystals”. Dey A, Ye J, De A, Debroye E, Ha SK, Bladt E, Kshirsagar AS, Wang Z, Yin J, Wang Y, Quan LN, Yan F, Gao M, Li X, Shamsi J, Debnath T, Cao M, Scheel MA, Kumar S, Steele JA, Gerhard M, Chouhan L, Xu K, Wu X-gang, Li Y, Zhang Y, Dutta A, Han C, Vincon I, Rogach AL, Nag A, Samanta A, Korgel BA, Shih C-J, Gamelin DR, Son DH, Zeng H, Zhong H, Sun H, Demir HV, Scheblykin IG, Mora-Sero I, Stolarczyk JK, Zhang JZ, Feldmann J, Hofkens J, Luther JM, Perez-Prieto J, Li L, Manna L, Bodnarchuk M I, Kovalenko M V, Roeffaers MBJ, Pradhan N, Mohammed OF, Bakr OM, Yang P, Muller-Buschbaum P, Kamat P V, Bao Q, Zhang Q, Krahne R, Galian RE, Stranks SD, Bals S, Biju V, Tisdale WA, Yan Y, Hoye RLZ, Polavarapu L, Acs Nano 15, 10775 (2021). http://doi.org/10.1021/ACSNANO.0C08903
Abstract: Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 13.942
Times cited: 538
DOI: 10.1021/ACSNANO.0C08903
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“Capturing wetting states in nanopatterned silicon”. Xu X, Vereecke G, Chen C, Pourtois G, Armini S, Verellen N, Tsai WK, Kim DW, Lee E, Lin CY, Van Dorpe P, Struyf H, Holsteyns F, Moshchalkov V, Indekeu J, De Gendt S;, ACS nano 8, 885 (2014). http://doi.org/10.1021/nn405621w
Abstract: Spectacular progress in developing advanced Si circuits with reduced size, along the track of Moore's law, has been relying on necessary developments in wet cleaning of nanopatterned Si wafers to provide contaminant free surfaces. The most efficient cleaning is achieved when complete wetting can be realized. In this work, ordered arrays of silicon nanopillars on a hitherto unexplored small scale have been used to study the wetting behavior on nanomodulated surfaces in a substantial range of surface treatments and geometrical parameters. With the use of optical reflectance measurements, the nanoscale water imbibition depths have been measured and the transition to the superhydrophobic Cassie-Baxter state has been accurately determined. For pillars of high aspect ratio (about 15), the transition occurs even when the surface is grafted with a hydrophilic functional group. We have found a striking consistent deviation between the contact angle measurements and the straightforward application of the classical wetting models. Molecular dynamics simulations show that these deviations can be attributed to the long overlooked atomic-scale surface perturbations that are introduced during the nanofabrication process. When the transition condition is approached, transient states of partial imbibition that characterize intermediate states between the Wenzel and Cassie-Baxter states are revealed in our experiments.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 13.942
Times cited: 39
DOI: 10.1021/nn405621w
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“Current State of Cold Atmospheric Plasma and Cancer‐Immunity Cycle: Therapeutic Relevance and Overcoming Clinical Limitations Using Hydrogels”. Živanić, M, Espona‐Noguera A, Lin A, Canal C, Advanced Science , 2205803 (2023). http://doi.org/10.1002/advs.202205803
Abstract: Cold atmospheric plasma (CAP) is a partially ionized gas that gains attention
as a well-tolerated cancer treatment that can enhance anti-tumor immune
responses, which are important for durable therapeutic effects. This review
offers a comprehensive and critical summary on the current understanding of
mechanisms in which CAP can assist anti-tumor immunity: induction of
immunogenic cell death, oxidative post-translational modifications of the
tumor and its microenvironment, epigenetic regulation of aberrant gene
expression, and enhancement of immune cell functions. This should provide
a rationale for the effective and meaningful clinical implementation of CAP. As
discussed here, despite its potential, CAP faces different clinical limitations
associated with the current CAP treatment modalities: direct exposure of
cancerous cells to plasma, and indirect treatment through injection of
plasma-treated liquids in the tumor. To this end, a novel modality is proposed:
plasma-treated hydrogels (PTHs) that can not only help overcome some of the
clinical limitations but also offer a convenient platform for combining CAP
with existing drugs to improve therapeutic responses and contribute to the
clinical translation of CAP. Finally, by integrating expertise in biomaterials and
plasma medicine, practical considerations and prospective for the
development of PTHs are offered.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 15.1
DOI: 10.1002/advs.202205803
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“Signatures of enhanced out-of-plane polarization in asymmetric BaTiO3 superlattices integrated on silicon”. Chen B, Gauquelin N, Strkalj N, Huang S, Halisdemir U, Nguyen MD, Jannis D, Sarott MF, Eltes F, Abel S, Spreitzer M, Fiebig M, Trassin M, Fompeyrine J, Verbeeck J, Huijben M, Rijnders G, Koster G, Nature communications 13, 265 (2022). http://doi.org/10.1038/s41467-021-27898-x
Abstract: In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform. Here, we present asymmetric LaMnO<sub>3</sub>/BaTiO<sub>3</sub>/SrTiO<sub>3</sub>superlattices fabricated on silicon with layer thickness control at the unit-cell level. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize<italic>c</italic>-axis oriented BaTiO<sub>3</sub>layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO<sub>3</sub>single film and conventional BaTiO<sub>3</sub>/SrTiO<sub>3</sub>superlattice grown on silicon. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO<sub>3</sub>as the thickness of BaTiO<sub>3</sub>increases. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 16.6
Times cited: 11
DOI: 10.1038/s41467-021-27898-x
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“Direct observation of cation diffusion driven surface reconstruction at van der Waals gaps”. Cui W, Lin W, Lu W, Liu C, Gao Z, Ma H, Zhao W, Van Tendeloo G, Zhao W, Zhang Q, Sang X, Nature communications 14, 554 (2023). http://doi.org/10.1038/S41467-023-35972-9
Abstract: Weak interlayer van der Waals (vdW) bonding has significant impact on the surface/interface structure, electronic properties, and transport properties of vdW layered materials. Unraveling the complex atomistic dynamics and structural evolution at vdW surfaces is therefore critical for the design and synthesis of the next-generation vdW layered materials. Here, we show that Ge/Bi cation diffusion along the vdW gap in layered GeBi2Te4 (GBT) can be directly observed using in situ heating scanning transmission electron microscopy (STEM). The cation concentration variation during diffusion was correlated with the local Te-6 octahedron distortion based on a quantitative analysis of the atomic column intensity and position in time-elapsed STEM images. The in-plane cation diffusion leads to out-of-plane surface etching through complex structural evolutions involving the formation and propagation of a non-centrosymmetric GeTe2 triple layer surface reconstruction on fresh vdW surfaces, and GBT subsurface reconstruction from a septuple layer to a quintuple layer. Our results provide atomistic insight into the cation diffusion and surface reconstruction in vdW layered materials. Weak interlayer van der Waals (vdW) bonding has significant impact on the structure and properties of vdW layered materials. Here authors use in-situ aberration-corrected ADF-STEM for an atomistic insight into the cation diffusion in the vdW gaps and the etching of vdW surfaces at high temperatures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 16.6
DOI: 10.1038/S41467-023-35972-9
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“Intrinsic thermal instability of methylammonium lead trihalide perovskite”. Conings B, Drijkoningen J, Gauquelin N, Babayigit A, D'Haen J, D'Olieslaeger L, Ethirajan A, Verbeeck J, Manca J, Mosconi E, Angelis FD, Boyen HG;, Laser physics review 5, 1500477 (2015). http://doi.org/10.1002/aenm.201500477
Abstract: Organolead halide perovskites currently are the new front-runners as light absorbers in hybrid solar cells, as they combine efficiencies passing already 20% with deposition temperatures below 100 °C and cheap solution-based fabrication routes. Long-term stability remains a major obstacle for application on an industrial scale. Here, it is demonstrated that significant decomposition effects already occur during annealing of a methylammonium lead triiode perovskite at 85 °C even in inert atmosphere thus violating international standards. The observed behavior supports the view of currently used perovskite materials as soft matter systems with low formation energies, thus representing a major bottleneck for their application, especially in countries with high average temperatures. This result can trigger a broader search for new perovskite families with improved thermal stability.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 16.721
Times cited: 1691
DOI: 10.1002/aenm.201500477
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“Proton and Li-Ion permeation through graphene with eight-atom-ring defects”. Griffin E, Mogg L, Hao G-P, Kalon G, Bacaksiz C, Lopez-Polin G, Zhou TY, Guarochico V, Cai J, Neumann C, Winter A, Mohn M, Lee JH, Lin J, Kaiser U, Grigorieva I V, Suenaga K, Ozyilmaz B, Cheng H-M, Ren W, Turchanin A, Peeters FM, Geim AK, Lozada-Hidalgo M, Acs Nano 14, 7280 (2020). http://doi.org/10.1021/ACSNANO.0C02496
Abstract: Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries, and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here, we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes similar to 1000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of eight-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to that of the six-atom rings of graphene and a relatively low barrier of similar to 0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 17.1
Times cited: 53
DOI: 10.1021/ACSNANO.0C02496
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“A high-entropy oxide as high-activity electrocatalyst for water oxidation”. Kante MV, Weber ML, Ni S, van den Bosch ICG, van der Minne E, Heymann L, Falling LJ, Gauquelin N, Tsvetanova M, Cunha DM, Koster G, Gunkel F, Nemsak S, Hahn H, Estrada LV, Baeumer C, ACS nano 17, 5329 (2023). http://doi.org/10.1021/ACSNANO.2C08096
Abstract: High-entropy materials are an emerging pathway in the development of high-activity (electro)catalysts because of the inherent tunability and coexistence of multiple potential active sites, which may lead to earth-abundant catalyst materials for energy-efficient electrochemical energy storage. In this report, we identify how the multication composition in high-entropy perovskite oxides (HEO) contributes to high catalytic activity for the oxygen evolution reaction (OER), i.e., the key kinetically limiting half-reaction in several electrochemical energy conversion technologies, including green hydrogen generation. We compare the activity of the (001) facet of LaCr0.2Mn0.2Fe0.2Co0.2Ni0.2O3-delta with the parent compounds (single B-site in the ABO3 perovskite). While the single B-site perovskites roughly follow the expected volcano-type activity trends, the HEO clearly outperforms all of its parent compounds with 17 to 680 times higher currents at a fixed overpotential. As all samples were grown as an epitaxial layer, our results indicate an intrinsic composition-function relationship, avoiding the effects of complex geometries or unknown surface composition. In-depth X-ray photoemission studies reveal a synergistic effect of simultaneous oxidation and reduction of different transition metal cations during the adsorption of reaction intermediates. The surprisingly high OER activity demonstrates that HEOs are a highly attractive, earth-abundant material class for high-activity OER electrocatalysts, possibly allowing the activity to be fine-tuned beyond the scaling limits of mono-or bimetallic oxides.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 17.1
DOI: 10.1021/ACSNANO.2C08096
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“The role of SnF₂, additive on interface formation in all lead-free FASnI₃, perovskite solar cells”. Zillner J, Boyen H-G, Schulz P, Hanisch J, Gauquelin N, Verbeeck J, Kueffner J, Desta D, Eisele L, Ahlswede E, Powalla M, Advanced functional materials , 2109649 (2022). http://doi.org/10.1002/ADFM.202109649
Abstract: Tin-based perovskites are promising alternative absorber materials for leadfree perovskite solar cells but need strategies to avoid fast tin (Sn) oxidation. Generally, this reaction can be slowed down by the addition of tin fluoride (SnF2) to the perovskite precursor solution, which also improves the perovskite layer morphology. Here, this work analyzes the spatial distribution of the additive within formamidinium tin triiodide (FASnI(3)) films deposited on top of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transporting layers. Employing time-of-flight secondary ion mass spectrometry and a combination of hard and soft X-ray photoelectron spectroscopy, it is found that Sn F2 preferably accumulates at the PEDOT:PSS/perovskite interface, accompanied by the formation of an ultrathin SnS interlayer with an effective thickness of approximate to 1.2 nm.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19
Times cited: 22
DOI: 10.1002/ADFM.202109649
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“Diluted oxide interfaces with tunable ground states”. Gan Y, Christensen DV, Zhang Y, Zhang H, Krishnan D, Zhong Z, Niu W, Carrad DJ, Norrman K, von Soosten M, Jespersen TS, Shen B, Gauquelin N, Verbeeck J, Sun J, Pryds N, Chen Y, Advanced materials 31, 1805970 (2019). http://doi.org/10.1002/ADMA.201805970
Abstract: The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1-xMnxO3/STO (0 <= x <= 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of n(c) = 2.8 x 10(13) cm(-2), where a peak T-SC approximate to 255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >= 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only d(xy) electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 x 10(12) cm(-2) < n(s) <= 1.1 x 10(13) cm(-2)) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 31
DOI: 10.1002/ADMA.201805970
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“A hard oxide semiconductor with a direct and narrow bandgap and switchable pn electrical conduction”. Ovsyannikov SV, Karkin AE, Morozova NV, Shchennikov VV, Bykova E, Abakumov AM, Tsirlin AA, Glazyrin KV, Dubrovinsky L, Advanced materials 26, 8185 (2014). http://doi.org/10.1002/adma.201403304
Abstract: An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 27
DOI: 10.1002/adma.201403304
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“Element Specific Monolayer Depth Profiling”. Macke S, Radi A, Hamann-Borrero JE, Verna A, Bluschke M, Brück S, Goering E, Sutarto R, He F, Cristiani G, Wu M, Benckiser E, Habermeier H-U, Logvenov G, Gauquelin N, Botton GA, Kajdos AP, Stemmer S, Sawatzky GA, Haverkort MW, Keimer B, Hinkov V, Advanced Materials 26, 6554 (2014). http://doi.org/10.1002/adma.201402028
Abstract: The electronic phase behavior and functionality of interfaces and surfaces in complex materials are strongly correlated to chemical composition profiles, stoichiometry and intermixing. Here a novel analysis scheme for resonant X-ray reflectivity maps is introduced to determine such profiles, which is element specific and non-destructive, and which exhibits atomic-layer resolution and a probing depth of hundreds of nanometers.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT)
Impact Factor: 19.791
Times cited: 34
DOI: 10.1002/adma.201402028
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“A Universal Deposition Protocol for Planar Heterojunction Solar Cells with High Efficiency Based on Hybrid Lead Halide Perovskite Families”. Conings B, Babayigit A, Klug M T, Bai S, Gauquelin N, Sakai N, Wang J T-W, Verbeeck J, Boyen H-G, Advanced materials 28, 10701 (2016). http://doi.org/10.1002/adma.201603747
Abstract: A robust and expedient gas quenching method is developed for the solution deposition of hybrid perovskite thin films. The method offers a reliable standard practice for the fabrication of a non-exhaustive variety of perovskites exhibiting excellent film morphology and commensurate high performance in both regular and inverted structured solar cell architectures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 95
DOI: 10.1002/adma.201603747
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“Nonlayered CdSe flakes homojunctions”. Jin B, Liang F, Hu Z-Y, Wei P, Liu K, Hu X, Van Tendeloo G, Lin Z, Li H, Zhou X, Xiong Q, Zhai T, Advanced Functional Materials 30, 1908902 (2020). http://doi.org/10.1002/ADFM.201908902
Abstract: 2D homojunctions have stimulated extensive attention because of their perfect thermal and lattice matches, as well as their tunable band structures in 2D morphology, which provide fascinating opportunities for novel electronics and optoelectronics. Recently, 2D nonlayered materials have attracted the attention of researchers owing to their superior functional applications and diverse portfolio of the 2D family. Therefore, 2D nonlayered homojunctions would open the door to a rich spectrum of exotic 2D materials. However, they are not investigated due to their extremely difficult synthesis methods. Herein, nonlayered CdSe flakes homojunctions are obtained via self-limited growth with InCl3 as a passivation agent. Interestingly, two pieces of vertical wurtzite-zinc blende (WZ-ZB) homojunctions epitaxially integrate into WZ/ZB lateral junctions. These homojunctions show a divergent second-harmonic generation intensity, strongly correlated to the multiple twinned ZB phase, as identified by aberration-corrected scanning transmission electron microscopy and theoretical calculations. Impressively, the photodetector based on this WZ/ZB CdSe homojunction shows excellent performances, integrating a high photoswitching ratio (3.4 x 10(5)) and photoresponsivity (3.7 x 10(3) A W-1), suggesting promising potential for applications in electronics and optoelectronics.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19
Times cited: 8
DOI: 10.1002/ADFM.201908902
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