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Author Boulay, E.; Nakano, J.; Turner, S.; Idrissi, H.; Schryvers, D.; Godet, S.
Title Critical assessments and thermodynamic modeling of BaO-SiO2 and SiO2-TiO2 systems and their extensions into liquid immiscibility in the BaO-SiO2-TiO2 system Type A1 Journal article
Year 2014 Publication Calphad computer coupling of phase diagrams and thermochemistry Abbreviated Journal Calphad
Volume 47 Issue Pages 68-82
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract This study discusses rational reproduction of liquid immiscibility in the BaO-SiO2-TiO2 system. While a ternary assessment requires sub-binary descriptions in the same thermodynamic model, the related sub-binary systems BaO-SiO2, BaO-TiO2 and SiO2-TiO2 liquid and solid phases have been evaluated using different thermodynamic models in the literature. In this study, BaO-SiO2 and SiO2-TiO2 were assessed using the Ionic Two Sublattice model (I2SL) based on experimental data from the literature. BaO-TiO2 was already assessed using this model. Binary descriptions developed were then used for the assessment of liquid immiscibility in the BaO-SiO2-TiO2 system. Ternary interaction parameters were found necessary for rational reproduction of the new ternary experimental data gathered in the present work. The model parameters for each system were evaluated using a CAPLHAD approach. A set of parameters is proposed. They show good agreement between the calculated and experimental equilibrium liquidus, liquid immiscibility and thermochemical properties in the BaO-SiO2-TiO2 system. (C) 2014 Elsevier Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000346224700008 Publication Date 2014-07-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0364-5916; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.6 Times cited 9 Open Access
Notes Approved (up) Most recent IF: 1.6; 2014 IF: 1.370
Call Number UA @ lucian @ c:irua:122776 Serial 540
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Author Bercx, M.; Mayda, S.; Depla, D.; Partoens, B.; Lamoen, D.
Title Plasmonic effects in the neutralization of slow ions at a metallic surface Type A1 Journal Article
Year 2023 Publication Contributions to Plasma Physics Abbreviated Journal Contrib. Plasma Phys
Volume Issue Pages
Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Abstract Secondary electron emission is an important process that plays a significant role in several plasma‐related applications. As measuring the secondary electron yield experimentally is very challenging, quantitative modelling of this process to obtain reliable yield data is critical as input for higher‐scale simulations. Here, we build upon our previous work combining density functional theory calculations with a model originally developed by Hagstrum to extend its application to metallic surfaces. As plasmonic effects play a much more important role in the secondary electron emission mechanism for metals, we introduce an approach based on Poisson point processes to include both surface and bulk plasmon excitations to the process. The resulting model is able to reproduce the yield spectra of several available experimental results quite well but requires the introduction of global fitting parameters, which describe the strength of the plasmon interactions. Finally, we use an in‐house developed workflow to calculate the electron yield for a list of elemental surfaces spanning the periodic table to produce an extensive data set for the community and compare our results with more simplified approaches from the literature.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001067651300001 Publication Date 2023-09-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0863-1042 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.6 Times cited Open Access Not_Open_Access
Notes We acknowledge the financial support of FWO-Vlaanderen through project G.0216.14N. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by the FWO-Vlaanderen and the Flemish Government-department EWI. Approved (up) Most recent IF: 1.6; 2023 IF: 1.44
Call Number EMAT @ emat @c:irua:200330 Serial 8962
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Author Guzzinati, G.; Béché, A.; McGrouther, D.; Verbeeck, J.
Title Prospects for out-of-plane magnetic field measurements through interference of electron vortex modes in the TEM Type A1 Journal article
Year 2019 Publication Journal of optics Abbreviated Journal J Optics-Uk
Volume 21 Issue 12 Pages 124002
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Magnetic field mapping in transmission electron microscopy is commonplace, but all conventional methods provide only a projection of the components of the magnetic induction perpendicular to the electron trajectory. Recent experimental advances with electron vortices have shown that it is possible to map the out of plane magnetic induction in a TEM setup via interferometry with a specifically prepared electron vortex state carrying high orbital angular momentum (OAM). The method relies on the Aharonov?Bohm phase shift that the electron undergoes when going through a longitudinal field. Here we show how the same effect naturally occurs for any electron wave function, which can always be described as a superposition of OAM modes. This leads to a clear connection between the occurrence of high-OAM partial waves and the amount of azimuthal rotation in the far field angular distribution of the beam. We show that out of plane magnetic field measurement can thus be obtained with a much simpler setup consisting of a ring-like aperture with azimuthal spokes. We demonstrate the experimental setup and explore the achievable sensitivity of the magnetic field measurement.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000499367800001 Publication Date 2019-10-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2040-8978 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.741 Times cited 3 Open Access
Notes The authors thank V Grillo and T Harvey for interesting and fruitful discussion. GG acknowledges support from a postdoctoral fellow-ship grant from the Fonds Wetenschappelijk Onderzoek – Vlaanderen (FWO). The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3. AB acknowledges funding from FWO project G093417N ('Compressed sensing enabling low dose imaging in transmission electron microscopy'). DM gratefully acknowledges funding of the FEBID capability through joint funding by University of Glasgow & EPSRC through a Strategic Equipment Grant (EP/P001483/1). Approved (up) Most recent IF: 1.741
Call Number UA @ admin @ c:irua:165116 Serial 6319
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Author Lukashin, A.V.; Eliseev, A.A.; Zhuravleva, N.G.; Vertegel, A.A.; Tretyakov, Y.D.; Lebedev, O.I.; Van Tendeloo, G.
Title One-step synthesis of shelled PbS nanoparticles in a layered double hydroxide matrix Type A1 Journal article
Year 2004 Publication Mendeleev communications Abbreviated Journal Mendeleev Commun
Volume Issue 4 Pages 174-176
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The one-step preparation of capped PbS nanoparticles in an inorganic matrix via UV-induced decomposition of lead thiosulfate complexes intercalated into a hydrotalcite-type layered double hydroxide is reported.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000224247100025 Publication Date 2004-09-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0959-9436; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.741 Times cited 9 Open Access
Notes Approved (up) Most recent IF: 1.741; 2004 IF: 0.640
Call Number UA @ lucian @ c:irua:103735 Serial 2468
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Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A.
Title Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 173 Issue Pages 285-296
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997XC98100008 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 4 Open Access
Notes Approved (up) Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:20459 Serial 324
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Author Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.
Title Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 172 Issue Pages 426-432
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WL65300018 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 15 Open Access
Notes Approved (up) Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21345 Serial 942
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Author Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F.
Title The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 181 Issue Pages 218-228
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997YD52700007 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 9 Open Access
Notes Approved (up) Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21415 Serial 1253
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Author Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.
Title Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 172 Issue Pages 175-182
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WL48900024 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 29 Open Access
Notes Approved (up) Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21402 Serial 1394
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Author Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.
Title Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 172 Issue Pages 433-439
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WL65300019 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 23 Open Access
Notes Approved (up) Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21405 Serial 2051
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Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
Title Defects and growth mechanisms of AgCl(100) tabular crystals Type A1 Journal article
Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 187 Issue Pages 410-420
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000073710800014 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 8 Open Access
Notes Approved (up) Most recent IF: 1.751; 1998 IF: 1.307
Call Number UA @ lucian @ c:irua:29675 Serial 625
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Author Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schaffer, C.
Title Hetero-epitaxial growth of CoSi2 thin films on Si(100) : template effects and epitaxial orientations Type A1 Journal article
Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 191 Issue 3 Pages 430-438
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract This HREM investigation focuses on the influence of point defects on the final epitaxial relation and atomic interface configuration in a CoSi2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0) system is used and, by altering the number of deposited Co monolayers in the template layer, the point defect behavior is studied. We propose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presence of an interface, especially a silicide interface, the migration of point defects through a lattice by formation of [1 0 0]-split interstitial (dumbbell) atomic configurations, and a new type of extended defect configurations in diamond type materials will all amalgamate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000075032500017 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 6 Open Access
Notes Approved (up) Most recent IF: 1.751; 1998 IF: 1.307
Call Number UA @ lucian @ c:irua:102930 Serial 1418
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Author Stefan, M.; Nistor, S.V.; Mateescu, D.C.; Abakumov, A.M.
Title Growth of pure and doped Rb2ZnCl4and K2ZnCl4 single crystals by Czochralski technique Type A1 Journal article
Year 1999 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 200 Issue 1-2 Pages 148-154
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High-quality single crystals of Rb2ZnCl4 and K2ZnCl4, pure or doped with Cu, Mn, Cd, Tl, Sn, Pb and In cations, were grown by Czochralski technique in argon atmosphere, using an experimental setup that allows direct visual access to the whole growth zone. Slowly cooled crystals exhibit excellent cleavage properties. Fastly cooled crystals do cleave poorly. As shown by X-ray diffraction studies, such K2ZnCl4 samples exhibit inclusions of the high-temperature Pmcn phase with lattice parameters a = 7.263(2) Angstrom, b = 12.562(2) Angstrom and c = 8.960(4) Angstrom in the P2(1) cn room temperature stable phase. ESR and optical spectroscopy studies revealed the localization and valence state of the cation dopants. (C) 1999 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000079840600021 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 13 Open Access
Notes Approved (up) Most recent IF: 1.751; 1999 IF: 1.492
Call Number UA @ lucian @ c:irua:102909 Serial 1395
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Author Pauwels, B.; Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; Joutsensaari, J.; Kauppinen, E.I.
Title Multiply twinned C60 and C70 nanoparticles Type A1 Journal article
Year 1999 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 200 Issue Pages 126-136
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000079840600018 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 17 Open Access
Notes Approved (up) Most recent IF: 1.751; 1999 IF: 1.492
Call Number UA @ lucian @ c:irua:29711 Serial 2238
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Author Lei, C.H.; Van Tendeloo, G.; Lisoni, J.G.; Siegert, M.; Schubert, J.
Title Growth kinetic of MgO film on r-plane of sapphire: microstructural study Type A1 Journal article
Year 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 226 Issue 2/3 Pages 419-429
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000169535100029 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 7 Open Access
Notes Approved (up) Most recent IF: 1.751; 2001 IF: 1.283
Call Number UA @ lucian @ c:irua:54783 Serial 1391
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Author Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C.
Title Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation Type A1 Journal article
Year 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 222 Issue 3 Pages 558-564
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000166701500020 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 12 Open Access
Notes Approved (up) Most recent IF: 1.751; 2001 IF: 1.283
Call Number UA @ lucian @ c:irua:104211 Serial 3240
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Author Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G.
Title Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures Type A1 Journal article
Year 2003 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 248 Issue Pages 498-502
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000180446900091 Publication Date 2002-12-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 14 Open Access
Notes was dubbel; dubbel eruit gehaald Approved (up) Most recent IF: 1.751; 2003 IF: 1.414
Call Number UA @ lucian @ c:irua:54785 Serial 810
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Author Pardo, J.A.; Santiso, J.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D.; Van Tendeloo, G.
Title Epitaxial Sr4Fe6O13\pm\delta films obtained by pulsed laser deposition Type A1 Journal article
Year 2004 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 262 Issue Pages 334-340
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000189098700052 Publication Date 2003-11-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 8 Open Access
Notes Iap V-1 Approved (up) Most recent IF: 1.751; 2004 IF: 1.707
Call Number UA @ lucian @ c:irua:54786 Serial 1074
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Author Nistor, L.C.; Ghica, C.; Matei, D.; Dinescu, G.; Dinescu, M.; Van Tendeloo, G.
Title Growth and characterization of a-axis textured ZnO thin films Type A1 Journal article
Year 2005 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 277 Issue Pages 26-31
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000228737900005 Publication Date 2005-02-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 44 Open Access
Notes Bil 01/73 Approved (up) Most recent IF: 1.751; 2005 IF: 1.681
Call Number UA @ lucian @ c:irua:54787 Serial 1390
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Author Mahieu, S.; Ghekiere, P.; de Winter, G.; Heirwegh, S.; Depla, D.; de Gryse, R.; Lebedev, O.I.; Van Tendeloo, G.
Title Mechanism of preferential orientation in sputter deposited titanium nitride and yttria-stabilized zirconia layers Type A1 Journal article
Year 2005 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 279 Issue Pages 100-109
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000229348400015 Publication Date 2005-03-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 41 Open Access
Notes Approved (up) Most recent IF: 1.751; 2005 IF: 1.681
Call Number UA @ lucian @ c:irua:54788 Serial 1979
Permanent link to this record
 

 
Author Aichele, T.; Robin, I.-C.; Bougerol, C.; André, R.; Tatarenko, S.; Van Tendeloo, G.
Title Structural and optical properties of CdSe quantum dots induced by amorphous Se Type A1 Journal article
Year 2007 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 301 Issue Pages 281-284
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000246015800065 Publication Date 2007-01-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 5 Open Access
Notes Approved (up) Most recent IF: 1.751; 2007 IF: 1.950
Call Number UA @ lucian @ c:irua:64716 Serial 3200
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Author Klimczuk, T.; Wang, C.H.; Xu, Q.; Lawrence, J.; Durakiewicz, T.; Ronning, F.; Llobet, A.; Bauer, E.D.; Griveau, J.-C.; Sadowski, W.; Zandbergen, H.W.; Thompson, J.D.; Cava, R.J.
Title Crystal growth of CsCl-type Yb0.24Sn0.76Ru Type A1 Journal article
Year 2011 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 318 Issue 1 Pages 1005-1008
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The YbRuSn ternary system was investigated and a new material, Yb0.24Sn0.76Ru, with a simple cubic crystal structure, was discovered. Yb0.24Sn0.76Ru has a smaller lattice parameter a=3.217(4) Å, than its isostructural YbRu analogue (a=3.360 Å). Both X-ray diffraction and electron microscopy techniques were used to refine the crystal structure of Yb0.24Sn0.76Ru. It was found that a new compound forms in the CsCl structure, with Ru on the 1a site and a (Yb, Sn) mixture on site 1b. The XRD Rietveld analysis provides the occupation of Yb equal to 0.24, in agreement with the single crystal nano-electron diffraction refinement, which gives the occupation 0.21.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000289653900220 Publication Date 2010-10-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 1 Open Access
Notes Esteem 026019 Approved (up) Most recent IF: 1.751; 2011 IF: 1.726
Call Number UA @ lucian @ c:irua:89966 Serial 556
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Author Michielsen, B.; Verlackt, C.; van der Veken, B.J.; Herrebout, W.A.
Title C-H\cdots X (X = S, P) hydrogen bonding : the complexes of halothane with dimethyl sulfide and trimethylphosphine Type A1 Journal article
Year 2012 Publication Journal Of Molecular Structure Abbreviated Journal J Mol Struct
Volume 1023 Issue Pages 90-95
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract The formation of CH⋯S and CH⋯P hydrogen bonded complexes of halothane, CHBrClCF3, with dimethyl sulfide(-d6) and trimethylphosphine(-d9) have been studied in solutions of liquid krypton using infrared and Raman spectroscopy. In the 1:1 complexes, the halothane CH stretching mode is found to be red-shifted by 43 cm−1 in the dimethyl sulfide complex, and by 63 cm−1 in the trimethylphosphine complex. The complexation enthalpies were derived and amount to −10.7(2) and −11.2(2) kJ mol−1 for the respective complexes. The experiments were supported by ab initio calculations and Monte Carlo simulations. The obtained data for the CH⋯S and CH⋯P hydrogen bonds is compared to that of corresponding CH⋯O and CH⋯N hydrogen bonds.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000308971900017 Publication Date 2012-03-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2860; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.753 Times cited 21 Open Access
Notes Approved (up) Most recent IF: 1.753; 2012 IF: 1.404
Call Number UA @ lucian @ c:irua:100917 Serial 3519
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Author Lamoen, D.; March, N.H.
Title Orientational disorder in some molecular solids in relation to the boson peak in glasses Type A1 Journal article
Year 2009 Publication Physics letters : A Abbreviated Journal Phys Lett A
Volume 373 Issue 7 Pages 799-800
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Orientational disorder in some molecular solids is discussed in relation to the emphasis placed on transverse vibrational modes in glasses as the origin of the observed boson peak in two very recent contributions in Nature Materials. In particular, facts are here presented for (i) CH4, (ii) C60 and (iii) ethanol in their solid phases for (a) specific heat and (b) neutron scattering. The results for ethanol in particular do not fit in with the interpretation of the boson peak in terms of transverse acoustic phonons in disordered systems. Glasses will therefore have to be separated into at least two classes where the physical interpretation of the boson peak is concerned.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000263515500020 Publication Date 2009-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0375-9601; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.772 Times cited 3 Open Access
Notes Bof Approved (up) Most recent IF: 1.772; 2009 IF: 2.009
Call Number UA @ lucian @ c:irua:72917 Serial 2516
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Author Ekimov, E.A.; Kudryavtsev, O.S.; Turner, S.; Korneychuk, S.; Sirotinkin, V.P.; Dolenko, T.A.; Vervald, A.M.; Vlasov, I.I.
Title The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond Type A1 Journal article
Year 2016 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 213 Issue 213 Pages 2582-2589
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000388321500006 Publication Date 2016-07-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 8 Open Access
Notes Approved (up) Most recent IF: 1.775
Call Number EMAT @ emat @ c:irua:135175 Serial 4120
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Author Sankaran, K.J.; Hoang, D.Q.; Srinivasu, K.; Korneychuk, S.; Turner, S.; Drijkoningen, S.; Pobedinskas, P.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K.
Title Type A1 Journal article
Year 2016 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 213 Issue 10 Pages 2654-2661
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Utilization of Au and nanocrystalline diamond ( NCD) as interlayers noticeably modifies the microstructure and field electron emission ( FEE) properties of hexagonal boron nitride nanowalls ( hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride ( aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000388321500017 Publication Date 2016-09-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 5 Open Access
Notes The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Projects G.0456.12 and G.0044.13N, the Methusalem “NANO” network. K. J. Sankaran, P. Pobedinskas, and S. Turner are FWO Postdoctoral Fellows of the Research Foundations Flanders (FWO). Approved (up) Most recent IF: 1.775
Call Number UA @ lucian @ c:irua:144644UA @ admin @ c:irua:144644 Serial 4655
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Author Garud, S.; Gampa, N.; Allen, T.G.; Kotipalli, R.; Flandre, D.; Batuk, M.; Hadermann, J.; Meuris, M.; Poortmans, J.; Smets, A.; Vermang, B.
Title Surface passivation of CIGS solar cells using gallium oxide Type A1 Journal article
Year 2018 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 215 Issue 7 Pages 1700826
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000430128500015 Publication Date 2018-02-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 8 Open Access Not_Open_Access
Notes ; The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements. ; Approved (up) Most recent IF: 1.775
Call Number UA @ lucian @ c:irua:150761 Serial 4981
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Author Korneychuk, S.; Guzzinati, G.; Verbeeck, J.
Title Measurement of the Indirect Band Gap of Diamond with EELS in STEM Type A1 Journal article
Year 2018 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 215 Issue 22 Pages 1800318
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this work, a simple method to measure the indirect band gap of diamond with electron energy loss spectroscopy (EELS) in transmission electron microscopy (TEM) is showed. The authors discuss the momentum space resolution achievable with EELS and the possibility of deliberately selecting specific transitions of interest. Based on a simple 2 parabolic band model of the band structure, the authors extend our predictions from the direct band gap case discussed in previous work, to the case of an indirect band gap. Finally, the authors point out the emerging possibility to partly reconstruct the band structure with EELS exploiting our simplified model of inelastic scattering and support it with experiments on diamond.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000450818100004 Publication Date 2018-07-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 6 Open Access Not_Open_Access
Notes S.K. and J.V. acknowledge funding from the “Geconcentreerde Onderzoekacties” (GOA) project “Solarpaint” of the University of Antwerp. Financial support via the Methusalem “NANO” network is acknowledged. G.G. acknowledges support from a postdoctoral fellowship grant from the Fonds Wetenschappelijk Onderzoek-Vlaanderen (FWO). The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government. “Geconcentreerde Onderzoekacties” (GOA) project “Solarpaint”; Methusalem “NANO” network; Fonds Wetenschappelijk Onderzoek-Vlaanderen (FWO); Hercules fund from the Flemish Government; Approved (up) Most recent IF: 1.775
Call Number EMAT @ emat @UA @ admin @ c:irua:155402 Serial 5138
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Author Willems, B.; Martineau, P.M.; Fisher, D.; van Royen, J.; Van Tendeloo, G.
Title Dislocation distributions in brown diamond Type A1 Journal article
Year 2006 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
Volume 203 Issue 12 Pages 3076-3080
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000240967400014 Publication Date 2006-09-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300;1862-6319; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 21 Open Access
Notes Approved (up) Most recent IF: 1.775; 2006 IF: NA
Call Number UA @ lucian @ c:irua:61002 Serial 730
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Author Titantah, J.T.; Lamoen, D.
Title First-principles characterization of amorphous carbon nitride systems: structural and electronic properties Type A1 Journal article
Year 2006 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
Volume 203 Issue 12 Pages 3191-3197
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000240967400032 Publication Date 2006-09-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300;1862-6319; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 3 Open Access
Notes Approved (up) Most recent IF: 1.775; 2006 IF: NA
Call Number UA @ lucian @ c:irua:61003 Serial 1205
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Author Mortet, V.; Zhang, L.; Eckert, M.; D'Haen, J.; Soltani, A.; Moreau, M.; Troadec, D.; Neyts, E.; De Jaeger, J.C.; Verbeeck, J.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K.; Wagner, P.
Title Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study Type A1 Journal article
Year 2012 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 209 Issue 9 Pages 1675-1682
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the deposited material. The crystalline properties of the films are characterized by SEM, TEM, EELS, and Raman spectroscopy. A clear improvement of the crystalline structure of the nanograined diamond film is observed for low negative bias voltages, while high bias voltages lead to thin films consisting of diamond grains of only ∼10 nm nanometer in size, showing remarkable similarities with so-called ultrananocrystalline diamond. These layers arecharacterized by an increasing amount of sp2-bonded carbon content of the matrix in which the diamond grains are embedded. Classical molecular dynamics simulations support the observed experimental data, giving insight in the underlying mechanism for the observed increase in deposition rate with bias voltage. Furthermore, a high atomic concentration of hydrogen has been determined in these films. Finally, Raman scattering analyses confirm that the Raman line observed at ∼1150 cm−1 cannot be attributed to trans-poly-acetylene, which continues to be reported in literature, reassigning it to a deformation mode of CHx bonds in NCD.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000308942100009 Publication Date 2012-09-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 31 Open Access
Notes M.E. and E.N. acknowledge financial support from, respectively, the Institute for Promotion of Innovation through Science and Technology in Flanders (IWT), and the Research Foundation-Flanders (FWO). J.V. gratefully acknowledges financial support from the GOA project “XANES meets ELNES” of the research fund of the University of Antwerp. Calculation support was provided by the University of Antwerp through the core facility CALCUA. G.V.T. acknowledges the ERC grant COUNTATOMS. The work was also financially supported by the joint UAUHasseltMethusalem “NANO” network, the Research Programs G.0068.07 and G.0555.10N of the Research Foundation-Flanders (FWO), the IAP-P6/42 project “Quantum Effects in Clusters and Nanowires”, and by the EU FP7 through the Integrated Infrastructure Initiative “ESMI” (No. 262348), the Marie Curie ITN “MATCON” (PITN-GA-2009-238201), and the Collaborative Project “DINAMO” (No. 245122). Approved (up) Most recent IF: 1.775; 2012 IF: 1.469
Call Number UA @ lucian @ c:irua:101516UA @ admin @ c:irua:101516 Serial 1364
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