Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2018 |
ECS journal of solid state science and technology |
7 |
2 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. |
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers |
2019 |
ECS journal of solid state science and technology |
8 |
|
UA library record; WoS full record |
Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G. |
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations |
2015 |
ECS journal of solid state science and technology |
4 |
19 |
UA library record; WoS full record; WoS citing articles |
Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. |
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx |
2020 |
Ecs Journal Of Solid State Science And Technology |
9 |
|
UA library record; WoS full record; WoS citing articles |