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Author Bogaerts, A.; Gijbels, R.
Title Modeling of glow discharge sources with flat and pin cathodes and implications for mass spectrometric analysis Type A1 Journal article
Year 1997 Publication Journal of the American Society of Mass Spectrometry Abbreviated Journal J Am Soc Mass Spectr
Volume 8 Issue Pages 1021-1029
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1997XT64300009 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1044-0305;1879-1123; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.786 Times cited 15 Open Access
Notes Approved Most recent IF: 2.786; 1997 IF: 2.855
Call Number UA @ lucian @ c:irua:19606 Serial 2125
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Author Bogaerts, A.; Yan, M.; Gijbels, R.; Goedheer, W.
Title Modeling of ionization of argon in an analytical capacitively coupled radio-frequency glow discharge Type A1 Journal article
Year 1999 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 86 Issue 6 Pages 2990-3001
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000082232400010 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 18 Open Access
Notes Approved Most recent IF: 2.068; 1999 IF: 2.275
Call Number UA @ lucian @ c:irua:28320 Serial 2127
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Author Bogaerts, A.; Kolev, I.
Title Modeling of magnetron and glow discharges Type A1 Journal article
Year 2002 Publication Le vide: science, technique et applications Abbreviated Journal
Volume 57 Issue 304 Pages 296-307
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:40185 Serial 2128
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Author Bogaerts, A.; Gijbels, R.
Title Modeling of metastable argon atoms in a direct current glow discharge Type A1 Journal article
Year 1995 Publication Physical review : A : atomic, molecular and optical physics Abbreviated Journal Phys Rev A
Volume 52 Issue Pages 3743-3751
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos A1995TE17300053 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1050-2947;1094-1622; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.808 Times cited 98 Open Access
Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 #
Call Number UA @ lucian @ c:irua:12263 Serial 2129
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Author Bogaerts, A.; Aerts, R.; Snoeckx, R.; Somers, W.; Van Gaens, W.; Yusupov, M.; Neyts, E.
Title Modeling of plasma and plasma-surface interactions for medical, environmental and nano applications Type A1 Journal article
Year 2012 Publication Journal of physics : conference series Abbreviated Journal
Volume 399 Issue Pages 012011
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this paper, an overview is given of modeling investigations carried out in our research group for a better understanding of plasmas used for medical, environmental and nano applications. The focus is both on modeling the plasma chemistry and the plasma-surface interactions. The plasma chemistry provides the densities and fluxes of the important plasma species. This information can be used as input when modeling the plasma-surface interactions. The combination of plasma simulations and plasma – surface interaction simulations provides a more comprehensive understanding of the underlying processes for these applications.
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Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000312261700011 Publication Date 2012-11-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588;1742-6596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104727 Serial 2130
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Author de Bleecker, K.; Bogaerts, A.; Goedheer, W.
Title Modeling of the formation and transport of nanoparticles in silane plasmas Type A1 Journal article
Year 2004 Publication Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics Abbreviated Journal Phys Rev E
Volume 70 Issue Pages 056407,1-8
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The behavior of nanoparticles in a low-pressure silane discharge is studied with the use of a self-consistent one-dimensional fluid model. Nanoparticles of a given (prescribed) radius are formed in the discharge by the incorporation of a dust growth mechanism, i.e., by including a step in which large anions (typically Si12H−25), produced in successive chemical reactions of anions with silane molecules, are transformed into particles. Typically a few thousand anions are used for one nanoparticle. The resulting particle density and the charge on the particles are calculated with an iterative method. While the spatial distribution and the charge of the particles are influenced by the plasma, the presence of the nanoparticles will in turn influence the plasma properties. Several simulations with different particle radii are performed. The resulting density profile of the dust will greatly depend on the particle size, as it reacts to the shift of the balance of the different forces acting on the particles.
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Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000225970700092 Publication Date 2004-11-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1539-3755;1550-2376; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.366 Times cited 31 Open Access
Notes Approved Most recent IF: 2.366; 2004 IF: NA
Call Number UA @ lucian @ c:irua:49432 Serial 2132
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Author Bogaerts, A.; De Bie, C.; Eckert, M.; Georgieva, V.; Martens, T.; Neyts, E.; Tinck, S.
Title Modeling of the plasma chemistry and plasmasurface interactions in reactive plasmas Type A1 Journal article
Year 2010 Publication Pure and applied chemistry Abbreviated Journal Pure Appl Chem
Volume 82 Issue 6 Pages 1283-1299
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this paper, an overview is given of modeling activities going on in our research group, for describing the plasma chemistry and plasmasurface interactions in reactive plasmas. The plasma chemistry is calculated by a fluid approach or by hybrid Monte Carlo (MC)fluid modeling. An example of both is illustrated in the first part of the paper. The example of fluid modeling is given for a dielectric barrier discharge (DBD) in CH4/O2, to describe the partial oxidation of CH4 into value-added chemicals. The example of hybrid MCfluid modeling concerns an inductively coupled plasma (ICP) etch reactor in Ar/Cl2/O2, including also the description of the etch process. The second part of the paper deals with the treatment of plasmasurface interactions on the atomic level, with molecular dynamics (MD) simulations or a combination of MD and MC simulations.
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Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000279063900010 Publication Date 2010-04-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1365-3075;0033-4545; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.626 Times cited 13 Open Access
Notes Approved Most recent IF: 2.626; 2010 IF: 2.134
Call Number UA @ lucian @ c:irua:82108 Serial 2134
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Author Lenaerts, J.; Verlinden, G.; Ignatova, V.A.; van Vaeck, L.; Gijbels, R.; Geuens, I.
Title Modeling of the sputtering process of cubic silver halide microcrystals and its relevance in depth profiling by secondary ion-mass spectrometry (SIMS) Type A1 Journal article
Year 2001 Publication Fresenius' journal of analytical chemistry Abbreviated Journal Fresen J Anal Chem
Volume 370 Issue 5 Pages 654-662
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000170115200032 Publication Date 2002-10-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0937-0633;1432-1130; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 3 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:37251 Serial 2135
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Author de Bleecker, K.; Bogaerts, A.
Title Modeling of the synthesis and subsequent growth of nanoparticles in dusty plasmas Type A1 Journal article
Year 2007 Publication High temperature material processes Abbreviated Journal High Temp Mater P-Us
Volume 11 Issue Pages 21-36
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000246372200003 Publication Date 2008-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1093-3611; ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:63996 Serial 2136
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Author Depla, D.; Chen, Z.Y.; Bogaerts, A.; Ignatova, V.; de Gryse, R.; Gijbels, R.
Title Modeling of the target surface modification by reactive ion implantation during magnetron sputtering Type A1 Journal article
Year 2004 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A
Volume 22 Issue 4 Pages 1524-1529
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000223322000075 Publication Date 2004-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.374 Times cited 13 Open Access
Notes Approved Most recent IF: 1.374; 2004 IF: 1.557
Call Number UA @ lucian @ c:irua:47331 Serial 2137
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Author Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M.
Title Modeling PECVD growth of nanostructured carbon materials Type A1 Journal article
Year 2009 Publication High temperature material processes Abbreviated Journal High Temp Mater P-Us
Volume 13 Issue 3/4 Pages 399-412
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract We present here some of our modeling efforts for PECVD growth of nanostructured carbon materials with focus on amorphous hydrogenated carbon. Experimental data from an expanding thermal plasma setup were used as input for the simulations. Attention was focused both on the film growth mechanism, as well as on the hydrocarbon reaction mechanisms during growth of the films. It is found that the reaction mechanisms and sticking coefficients are dependent on the specific surface sites, and the structural properties of the growth radicals. The film growth results are in correspondence with the experiment. Furthermore, it is found that thin a-C:H films can be densified using an additional H-flux towards the substrate.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000274202300012 Publication Date 2010-02-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1093-3611; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:80991 Serial 2138
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Author Martens, T.; Bogaerts, A.; Brok, W.J.M.; van der Mullen, J.J.A.M.
Title Modeling study on the influence of the pressure on a dielectric barrier discharge microplasma Type A1 Journal article
Year 2007 Publication Journal of analytical atomic spectrometry Abbreviated Journal J Anal Atom Spectrom
Volume 22 Issue 9 Pages 1003-1042
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000248917300013 Publication Date 2007-06-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-9477;1364-5544; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.379 Times cited 17 Open Access
Notes Approved Most recent IF: 3.379; 2007 IF: 3.269
Call Number UA @ lucian @ c:irua:64791 Serial 2140
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Author Tinck, S.; Boullart, W.; Bogaerts, A.
Title Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching : effects of SiO2 chamber wall coating Type A1 Journal article
Year 2011 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T
Volume 20 Issue 4 Pages 045012-045012,19
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.
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Corporate Author Thesis
Publisher Institute of Physics Place of Publication Bristol Editor
Language Wos 000295829800014 Publication Date 2011-06-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.302 Times cited 22 Open Access
Notes Approved Most recent IF: 3.302; 2011 IF: 2.521
Call Number UA @ lucian @ c:irua:91045 Serial 2141
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Author Tinck, S.; Bogaerts, A.
Title Modeling SiH4/O2/Ar inductively coupled plasmas used for filling of microtrenches in shallow trench isolation (STI) Type A1 Journal article
Year 2012 Publication Plasma processes and polymers Abbreviated Journal Plasma Process Polym
Volume 9 Issue 5 Pages 522-539
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Modeling results are presented to gain a better insight in the properties of a SiH4/O2/Ar inductively coupled plasma (ICP) and how it interacts with a silicon substrate (wafer), as applied in the microelectronics industry for the fabrication of electronic devices. The SiH4/O2/Ar ICP is used for the filling of microtrenches with isolating material (SiO2), as applied in shallow trench isolation (STI). In this article, a detailed reaction set that describes the plasma chemistry of SiH4/O2/Ar discharges as well as surface processes, such as sputtering, oxidation, and deposition, is presented. Results are presented on the plasma properties during the plasma enhanced chemical vapor deposition process (PECVD) for different gas ratios, as well as on the shape of the filled trenches and the surface compositions of the deposited layers. For the operating conditions under study it is found that the most important species accounting for deposition are SiH2, SiH3O, SiH3 and SiH2O, while SiH+2, SiH+3, O+2 and Ar+ are the dominant species for sputtering of the surface. By diluting the precursor gas (SiH4) in the mixture, the deposition rate versus sputtering rate can be controlled for a desired trench filling process. From the calculation results it is clear that a high deposition rate will result in undesired void formation during the trench filling, while a small deposition rate will result in undesired trench bottom and mask damage by sputtering. By varying the SiH4/O2 ratio, the chemical composition of the deposited layer will be influenced. However, even at the highest SiH4/O2 ratio investigated (i.e., 3.2:1; low oxygen content), the bulk deposited layer consists mainly of SiO2, suggesting that low-volatile silane species deposit first and subsequently become oxidized instead of being oxidized first in the plasma before deposition. Finally, it was found that the top surface of the deposited layer contained less oxygen due to preferential sputtering of O atoms, making the top layer more Si-rich. However, this effect is negligible at a SiH4/O2 ratio of 2:1 or lower.
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Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000303858100010 Publication Date 2012-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1612-8850; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.846 Times cited 5 Open Access
Notes Approved Most recent IF: 2.846; 2012 IF: 3.730
Call Number UA @ lucian @ c:irua:99127 Serial 2142
Permanent link to this record
 
 
Author O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V.
Title Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections Type A1 Journal article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
Volume 96 Issue 21 Pages 213514,1-213514,3
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000278183200090 Publication Date 2010-05-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 26 Open Access
Notes Approved Most recent IF: 3.411; 2010 IF: 3.841
Call Number UA @ lucian @ c:irua:89509 Serial 2143
Permanent link to this record
 
 
Author Neyts, E.C.; Bogaerts, A.
Title Modeling the growth of SWNTs and graphene on the atomic scale Type A1 Journal article
Year 2012 Publication ECS transactions Abbreviated Journal
Volume 45 Issue 4 Pages 73-78
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The possibility of application of nanomaterials is determined by our ability to control the properties of the materials, which are ultimately determined by their structure and hence their growth processes. We employ hybrid molecular dynamics / Monte Carlo (MD/MC) simulations to explore the growth of SWNTs and graphene on nickel as a catalyst, with the specific goal of unraveling the growth mechanisms. While the general observations are in agreement with the literature, we find a number of interesting phenomena to be operative which are crucial for the growth, and which are not accessible by MD simulations alone due to the associated time scale. Specifically, we observe metal mediated healing and restructuring processes to take place, reorganizing the carbon network during the initial nucleation step. In the case of carbon nanotube growth, this leads to the growth of tubes with a determinable chirality. In the case of graphene formation, we find that graphene is only formed at temperatures above 700 K. These results are of importance for understanding the growth mechanisms of these carbon nanomaterials on the fundamental level.
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Corporate Author Thesis
Publisher Electrochemical Society Place of Publication Pennington Editor
Language Wos 000316890000008 Publication Date 2012-04-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1938-6737;1938-5862; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:108535 Serial 2144
Permanent link to this record
 
 
Author Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K.
Title Modeling the impact of junction angles in tunnel field-effect transistors Type A1 Journal article
Year 2012 Publication Solid state electronics Abbreviated Journal Solid State Electron
Volume 69 Issue Pages 31-37
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.
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Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000301561600009 Publication Date 2012-01-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.58 Times cited 9 Open Access
Notes ; We acknowledge the input on nanowire processing of Rita Rooyackers and useful discussions with Wim Magnus. William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was also supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 1.58; 2012 IF: 1.482
Call Number UA @ lucian @ c:irua:97816 Serial 2145
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Author Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G.
Title Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor Type A1 Journal article
Year 2010 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
Volume 107 Issue 2 Pages 024518,1-024518,8
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because scaling the supply voltage below 1 V is possible due to the absence of a subthreshold-swing limit of 60 mV/decade. The modeling of the TFET performance, however, is still preliminary. We have developed models allowing a direct comparison between the single-gate, double-gate, and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible, and we provide improved insight in the TFET physics. The dependence of the tunnel current on device parameters is analyzed, in particular, the scaling with gate-dielectric thickness, channel thickness, and dielectric constants of gate dielectric and channel material. We show that scaling the gate-dielectric thickness improves the TFET performance more than scaling the channel thickness and that improvements are often overestimated. There is qualitative agreement between our model and our experimental data.
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000274180600122 Publication Date 2010-01-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 150 Open Access
Notes Approved Most recent IF: 2.068; 2010 IF: 2.079
Call Number UA @ lucian @ c:irua:89507 Serial 2146
Permanent link to this record
 
 
Author Wendelen, W.; Mueller, B.Y.; Autrique, D.; Bogaerts, A.; Rethfeld, B.
Title Modeling ultrashort laser-induced emission from a negatively biased metal Type A1 Journal article
Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 103 Issue 22 Pages 221603-221604
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract A theoretical study of ultrashort laser-induced electron emission from a negatively biased metallic cathode has been performed. Classical as well as tunneling electron emission mechanisms are considered. It was found that electron emission is governed by an interplay of processes inside as well as above the cathode. A hybrid model is proposed, where the electron distribution within the target is retrieved from Boltzmann scattering integrals, while the charge distribution above it is studied by a Particle-In-Cell simulation. The results indicate that non-equilibrium effects determine the initial emission process, whereas the space charge above the target suppresses the effectively emitted charge.
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000327696300020 Publication Date 2013-11-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 8 Open Access
Notes Approved Most recent IF: 3.411; 2013 IF: 3.515
Call Number UA @ lucian @ c:irua:111815 Serial 2147
Permanent link to this record
 
 
Author de Bleecker, K.; Bogaerts, A.; Goedheer, W.
Title Modelling of nanoparticle coagulation and transport dynamics in dusty silane discharges Type A1 Journal article
Year 2006 Publication New journal of physics Abbreviated Journal New J Phys
Volume 8 Issue Pages 178,1-22
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000240503300002 Publication Date 2006-09-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1367-2630; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.786 Times cited 20 Open Access
Notes Approved Most recent IF: 3.786; 2006 IF: 3.754
Call Number UA @ lucian @ c:irua:60269 Serial 2153
Permanent link to this record
 
 
Author Aerts, A.; Follens, L.R.A.; Biermans, E.; Bals, S.; Van Tendeloo, G.; Loppinet, B.; Kirschhock, C.E.A.; Martens, J.A.
Title Modelling of synchrotron SAXS patterns of silicalite-1 zeolite during crystallization Type A1 Journal article
Year 2011 Publication Physical chemistry, chemical physics Abbreviated Journal Phys Chem Chem Phys
Volume 13 Issue 10 Pages 4318-4325
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Synchrotron small angle X-ray scattering (SAXS) was used to characterize silicalite-1 zeolite crystallization from TEOS/TPAOH/water clear sol. SAXS patterns were recorded over a broad range of length scales, enabling the simultaneous monitoring of nanoparticles and crystals occurring at various stages of the synthesis. A simple two-population model accurately described the patterns. Nanoparticles were modeled by polydisperse coreshell spheres and crystals by monodisperse oblate ellipsoids. These models were consistent with TEM images. The SAXS results, in conjunction with in situ light scattering, showed that nucleation of crystals occurred in a short period of time. Crystals were uniform in size and shape and became increasingly anisotropic during growth. In the presence of nanoparticles, crystal growth was fast. During crystal growth, the number of nanoparticles decreased gradually but their size was constant. These observations suggested that the nanoparticles were growth units in an aggregative crystal growth mechanism. Crystals grown in the presence of nanoparticles developed a faceted habit and intergrowths. In the final stages of growth, nanoparticles were depleted. Concurrently, the crystal growth rate decreased significantly.
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Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000287584700017 Publication Date 2011-01-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1463-9076;1463-9084; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.123 Times cited 22 Open Access
Notes Fwo; Iap; Esteem 026019 Approved Most recent IF: 4.123; 2011 IF: 3.573
Call Number UA @ lucian @ c:irua:87602 Serial 2155
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Author Napierala, C.; Lepoittevin, C.; Edely, M.; Sauques, L.; Giovanelli, F.; Laffez, P.; Van Tendeloo, G.
Title Moderate pressure synthesis of rare earth nickelate with metal-insulator transition using polymeric precursors Type A1 Journal article
Year 2010 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 183 Issue 7 Pages 1663-1669
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Rare earth nickelates exhibit a reversible metalsemiconductor phase transition that is, in the infrared range, responsible for a thermo-optical contrast. The state of the art synthesis of these compounds usually requires high oxygen pressure to stabilize Ni in the oxidation state 3+. In this work, using polymeric precursor associated with moderate pressure annealing, we show that it is possible to obtain fully oxidized rare earth nickelate with metalinsulator transition. Using thermogravimetric analysis, X-ray diffraction and transmission electronic microscopy we compare different samples synthesized at different oxygen pressures and demonstrate their structural similarity. Thermo-optical properties were measured, in the infrared range, using reflectance measurements and confirmed the metalinsulator transition at 60 °C in both samples.TEM observations lead to the conclusion that the structure commonly obtained at 175 bar is perfectly observed in the 20 bar sample without major structural defects. The two samples exhibit a thermochromic behavior and thermo-optical properties of the two samples are equivalent.
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Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000279711200028 Publication Date 2010-05-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 3 Open Access
Notes Approved Most recent IF: 2.299; 2010 IF: 2.261
Call Number UA @ lucian @ c:irua:83679 Serial 2156
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Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; Broeckx, J.; van Landuyt, J.
Title Modification of the multislice method for calculating coherent STEM images Type A1 Journal article
Year 1995 Publication Physica status solidi: A: applied research Abbreviated Journal
Volume 150 Issue Pages 13-22
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
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Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1995RQ21500002 Publication Date 2007-01-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 5 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13292 Serial 2159
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
Title Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells Type A1 Journal article
Year 2009 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 105 Issue 8 Pages 084310,1-084310,8
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The modified atomic scattering amplitudes (MASAs) of mixed Ga<sub>1-x</sub>In<sub>x</sub>As, GaAs<sub>1-x</sub>N<sub>x</sub>, and InAs<sub>1-x</sub>N<sub>x</sub> are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various chemical environments and in the zinc-blende structure are compared with the frequently used Doyle and Turner values. Deviation from the Doyle and Turner results is found for small scattering vectors (s<0.3 Å<sup>-1</sup>) and for these scattering vectors the MASAs are found to be sensitive to the orientation of the scattering vector and on the chemical environment. The chemical environment sensitive MASAs are used within zero pressure classical Metropolis Monte Carlo, finite temperature calculations to investigate the effect of well size on the electron 002 and 220 structure factors (SFs). The implications of the use of the 002 (200) spot for the quantification of nanostructured Ga<sub>1-x</sub>In<sub>x</sub>As systems are examined while the 220 SF across the well is evaluated and is found to be very sensitive to the in-plane static displacements.
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Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000268064700149 Publication Date 2009-04-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.068 Times cited Open Access
Notes Fwo G.0425.05; Esteem 026019 Approved Most recent IF: 2.068; 2009 IF: 2.072
Call Number UA @ lucian @ c:irua:78282 Serial 2160
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Author Filippousi, M.; Siafaka, P.I.; Amanatiadou, E.P.; Nanaki, S.G.; Nerantzaki, M.; Bikiaris, D.N.; Vizirianakis, I.S.; Van Tendeloo, G.
Title Modified chitosan coated mesoporous strontium hydroxyapatite nanorods as drug carriers Type A1 Journal article
Year 2015 Publication Journal of materials chemistry B : materials for biology and medicine Abbreviated Journal J Mater Chem B
Volume 3 Issue 3 Pages 5991-6000
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Mesoporous strontium hydroxyapatite (SrHAp) nanorods (NRs) have been successfully synthesized using a simple and efficient chemical route, i.e. the hydrothermal method. Structural and morphological characterization of the as-synthesized SrHAp NRs have been performed by transmission electron microscopy (TEM) and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). TEM and HAADF-STEM measurements of the NRs reveal the coexistence of longer and shorter particles with the length ranging from 50 nm to 400 nm and a diameter of about 20-40 nm. Electron tomography measurements of the NRs allow us to better visualize the mesopores and their facets. Two model drugs, hydrophobic risperidone and hydrophilic pramipexole, were loaded into the SrHAp NRs. These nanorods were coated using a modified chitosan (CS) with poly(2-hydroxyethyl methacrylate) (PHEMA), in order to encapsulate the drug-loaded SrHAp nanoparticles and reduce the cytotoxicity of the loaded materials. The drug release from neat and encapsulated SrHAp NRs mainly depends on the drug hydrophilicity. Importantly, although neat SrHAp nanorods exhibit some cytotoxicity against Caco-2 cells, the Cs-g-PHEMA-SrHAp drug-loaded nanorods show an acceptable cytocompatibility.
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Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000358065100009 Publication Date 2015-06-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2050-750X;2050-7518; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.543 Times cited 24 Open Access
Notes Approved Most recent IF: 4.543; 2015 IF: 4.726
Call Number c:irua:127131 Serial 2161
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Author Nayuk, R.; Zacher, D.; Schweins, R.; Wiktor, C.; Fischer, R.A.; Van Tendeloo, G.; Huber, K.
Title Modulated formation of MOF-5 nanoparticles : a SANS analysis Type A1 Journal article
Year 2012 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume 116 Issue 10 Pages 6127-6135
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract MOF-5 nanoparticles were prepared by mixing a solution of [Zn4O(C6H5COO)(6)] with a solution of benzene-1,4-dicarboxylic acid in DMF at ambient conditions. The former species mimics as a secondary building unit (SBU), and the latter acts as linker. Mixing of the two solutions induced the formation of MOF-5 nanoparticles in dilute suspension. The applied conditions were identified as suitable for a closer investigation of the particle formation process by combined light and small angle neutron scattering (SANS). Scattering analysis revealed a significant impact of the molar ratio of the two components in the reaction mixture. Excessive use of the building unit slowed down the process. A similar effect was observed upon addition of 4n-decylbenzoic acid, which is supposed to act as a modulator. The formation mechanism leads to initial intermediates, which turn into cubelike nanoparticles with a diameter of about 60-80 nm. This initial stage is followed by an extended formation period, where nucleation proceeds over hours, leading to an increasing number of nanoparticles with the same final size of 60-80 nm.
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Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000301509600020 Publication Date 2012-02-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited 24 Open Access
Notes Approved Most recent IF: 4.536; 2012 IF: 4.814
Call Number UA @ lucian @ c:irua:97789 Serial 2163
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Author van Heurck, C.; Van Tendeloo, G.; Amelinckx, S.
Title The modulated structure in the melilite CA2ZnGe2O7 Type A1 Journal article
Year 1992 Publication Physics and chemistry of minerals Abbreviated Journal Phys Chem Miner
Volume 8 Issue Pages 441-452
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1992HM23200005 Publication Date 2004-08-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0342-1791;1432-2021; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.538 Times cited 19 Open Access
Notes Approved CHEMISTRY, PHYSICAL 54/144 Q2 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 9/35 Q2 #
Call Number UA @ lucian @ c:irua:4438 Serial 2164
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Author Milat, O.; Van Tendeloo, G.; Amelinckx, S.; Babu, T.G.N.; Greaves, C.
Title The modulated structure of Ca.85CuO2 as studied by means of electron diffraction Type A1 Journal article
Year 1992 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 97 Issue Pages 405-418
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1992HL68700019 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.133 Times cited 15 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4439 Serial 2165
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Author Sanchez-Munoz, L.; Nistor, L.; Van Tendeloo, G.; Sanz, J.
Title Modulated structures in KAISi3O8: a study by high resolution electron microscopy and 29Si MAS-NMR spectroscopy Type A1 Journal article
Year 1998 Publication Journal of electron microscopy Abbreviated Journal Microscopy-Jpn
Volume 47 Issue 1 Pages 17-28
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Tokyo Editor
Language Wos 000073247300003 Publication Date 2012-04-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0744;1477-9986; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.9 Times cited 10 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:25661 Serial 2166
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Author Musolino, N.; Bals, S.; Van Tendeloo, G.; Clayton, N.; Walker, E.; Flükiger, R.
Title Modulation-free phase in heavily Pb-doped (Bi,Pb)2212 crystals Type A1 Journal article
Year 2003 Publication Physica: C : superconductivity Abbreviated Journal Physica C
Volume 399 Issue 1/2 Pages 1-7
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report the complete disappearance of the structural modulation in heavily lead-doped Bi2-xPbxSr2CaCu2O8+delta crystals observed by transmission electron microscopy. Crystals with a nominal lead content of x = 0.8, corresponding to an effective lead content of x = 0.39, yield the non-modulated phase. The superconducting properties of this modulation-free phase (beta phase) have been studied and compared to those of undoped crystals displaying the modulated phase (alpha phase). Magnetisation measurements reveal that the irreversibility field H-irr(T) and relaxation rates are strongly improved within the beta phase. Measurements of the lower critical field, H-c1, show that the anisotropy factor, epsilon, is considerably reduced in the modulation-free crystals. This is the signature of stronger coupling between CuO2 layers which in turn deeply influences the effectiveness of the pinning. These measurements explain the enhanced pinning properties in moderately Pb-doped crystals in which the alpha phase and beta phase coexist. The enhanced pinning is not only due to the alpha/beta interfaces, which act as effective pinning centers: the emergence of modulation-free domains, characterized by a strongly reduced anisotropy, also significantly contribute to this effect. (C) 2003 Elsevier B.V. All rights reserved.
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Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000186526200001 Publication Date 2003-09-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.404 Times cited 31 Open Access
Notes Approved Most recent IF: 1.404; 2003 IF: 1.192
Call Number UA @ lucian @ c:irua:54797 Serial 2167
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