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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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van den Broek, W.; Rosenauer, A.; Goris, B.; Martinez, G.T.; Bals, S.; Van Aert, S.; van Dyck, D. |
Correction of non-linear thickness effects in HAADF STEM electron tomography |
2012 |
Ultramicroscopy |
116 |
67 |
UA library record; WoS full record; WoS citing articles |
|
|
Martinez, G.T.; Rosenauer, A.; de Backer, A.; Verbeeck, J.; Van Aert, S. |
Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy |
2014 |
Ultramicroscopy |
137 |
74 |
UA library record; WoS full record; WoS citing articles |
|
|
Mueller, K.; Krause, F.F.; Béché, A.; Schowalter, M.; Galioit, V.; Loeffler, S.; Verbeeck, J.; Zweck, J.; Schattschneider, P.; Rosenauer, A. |
Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction |
2014 |
Nature communications |
5 |
197 |
UA library record; WoS full record; WoS citing articles |
|
|
Grieb, T.; Tewes, M.; Schowalter, M.; Müller-Caspary, K.; Krause, F.F.; Mehrtens, T.; Hartmann, J.-M.; Rosenauer, A. |
Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation |
2018 |
Ultramicroscopy |
184 |
7 |
UA library record; WoS full record; WoS citing articles |
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|
Carmesin, C.; Schowalter, M.; Lorke, M.; Mourad, D.; Grieb, T.; Müller-Caspary, K.; Yacob, M.; Reithmaier, J.P.; Benyoucef, M.; Rosenauer, A.; Jahnke, F. |
Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 \mum telecom wavelength |
2017 |
Physical review B |
96 |
3 |
UA library record; WoS full record; WoS citing articles |
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Verbeeck, J.; Van Aert, S.; Zhang, L.; Haiyan, T.; Schattschneider, P.; Rosenauer, A. |
Computational aspects in quantitative EELS |
2010 |
Microscopy and microanalysis |
16 |
|
UA library record |
|
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Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R. |
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography |
2005 |
Microscopy of Semiconducting Materials |
107 |
|
UA library record; WoS full record; |
|
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Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. |
Ab initio computation of the mean inner Coulomb potential of technological important semiconductors |
2005 |
|
1007 |
|
UA library record; WoS full record; |
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Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. |
Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold |
2006 |
Applied Physics Letters |
88 |
8 |
UA library record; WoS full record; WoS citing articles |
|
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Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. |
Bond length variation in Ga1-xInxAs crystals from the Tersoff potential |
2007 |
Journal of applied physics |
101 |
19 |
UA library record; WoS full record; WoS citing articles |
|
|
Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. |
Calculation of Debye-Waller temperature factors for GaAs |
2008 |
Springer proceedings in physics |
120 |
|
UA library record; WoS full record; |
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Kruse, P.; Schowalter, M.; Lamoen, D.; Rosenauer, A.; Gerthsen, D. |
Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography |
2006 |
Ultramicroscopy |
106 |
50 |
UA library record; WoS full record; WoS citing articles |
|
|
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. |
Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals |
2008 |
Springer proceedings in physics |
120 |
|
UA library record; WoS full record; |
|
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Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D. |
First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs |
2005 |
|
107 |
|
UA library record; WoS full record; |
|
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Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. |
First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors |
2004 |
Applied Physics Letters |
85 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
Rossi, E.H.M.; Van Tendeloo, G.; Rosenauer, A. |
Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM |
2007 |
Philosophical magazine |
87 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A. |
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography |
2005 |
Applied Physics Letters |
86 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
Piscopiello, E.; Rosenauer, A.; Passaseo, A.; Montoya Rossi, E.H.; Van Tendeloo, G. |
Segregation in InxGa1-xAs/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition |
2005 |
Philosophical magazine |
85 |
11 |
UA library record; WoS full record; WoS citing articles |
|
|
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. |
Temperature effect on the 002 structure factor of ternary Ga1-xInxAs crystals |
2007 |
Physical review : B : condensed matter and materials physics |
76 |
3 |
UA library record; WoS full record; WoS citing articles |
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Guzzinati, G.; Ghielens, W.; Mahr, C.; Béché, A.; Rosenauer, A.; Calders, T.; Verbeeck, J. |
Electron Bessel beam diffraction patterns, line scan of Si/SiGe multilayer |
2019 |
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UA library record |
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