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Phase transformations and precipitation in amorphous Ti50Ni25Cu25 ribbons”. Satto C, Ledda A, Potapov P, Janssens JF, Schryvers D, Intermetallics 9, 395 (2001). http://doi.org/10.1016/S0966-9795(01)00015-2
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The phase transition and crystal structures of Ba3RM2O7.5 complex oxides (R=rare-earth elements, M = Al,Ga)”. Abakumov AM, Shpanchenko RV, Lebedev OI, Van Tendeloo G, Amelinckx S, Antipov EV, Acta crystallographica: section A: foundations of crystallography 55, 828 (1999). http://doi.org/10.1107/S0108767399002068
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Phase transitions: an alternative for stress accommodation in CMR manganate films”. Lebedev OI, Van Tendeloo G, Zeitschrift für Metallkunde 95, 244 (2004). http://doi.org/10.3139/146.017943
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Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy”. Van Tendeloo G, van Heurck C, van Landuyt J, Amelinckx S, Verheijen MA, van Loosdrecht PHM, Meijer G, Journal of physical chemistry 96, 7424 (1992). http://doi.org/10.1021/j100197a054
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Phase transitions in K3AlF6”. Abakumov AM, Rossell MD, Alekseeva AM, Vassiliev SY, Mudrezova SN, Van Tendeloo G, Antipov EV, Journal of solid state chemistry 179, 421 (2006). http://doi.org/10.1016/j.jssc.2005.10.044
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Physical limits on atomic resolution”. van Dyck D, Van Aert S, den Dekker AJ, Microscopy and microanalysis 10, 153 (2004). http://doi.org/10.1017/S143192760404036X
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Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
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Polar and magnetic Mn2FeMO6 (M=Nb, Ta) with LiNbO3-type structure : high-pressure synthesis”. Li MR, Walker D, Retuerto M, Sarkar T, Hadermann J, Stephens PW, Croft M, Ignatov A, Grams CP, Hemberger J, Nowik I, Halasyamani PS, Tran TT, Mukherjee S, Dasgupta TS, Greenblatt M;, Angewandte Chemie: international edition in English 52, 8406 (2013). http://doi.org/10.1002/anie.201302775
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Positional and orientational disorder in a solid solution of Sr9-xNi1.5-x(PO4)7 (x=0.3)”. Belik A, Izumi F, Ikeda T, Morozov VA, Dilanian R, Torii S, Kopnin E, Lebedev OI, Van Tendeloo G, Lazoryak BI, Chemistry and materials 14, 4464 (2002). http://doi.org/10.1021/cm0206901
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Tavernier S, op de Beeck W, Ghekiere J-P, Van Tendeloo G (1996) Positively charged toner for use in electrostatography : US5532097 : 07/02/1996
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Post-synthesis deposition of V-Zeolitic nanoparticles in SBA-15”. Meynen V, Beyers E, Cool P, Vansant EF, Mertens M, Weyten H, Lebedev OI, Van Tendeloo G, Chemical communications , 898 (2004). http://doi.org/10.1039/b400636d
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Precipitation behavior in Cu-Co alloy”. Takeda M, Shinohara G, Yamada H, Yoshida S, van Landuyt J, Hashimoto H, , 205 (1998)
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Preparation and characterization of melt textured NdBa2Cu3O7- bulk superconducting ceramics”. Tancret F, Monot I, Laffez P, Van Tendeloo G, Desgardin G, European physical journal: applied physics 1, 185 (1998). http://doi.org/10.1051/epjap:1998135
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Preparation and structure analysis of Gd(OH)3 nanorods”. Du G, Van Tendeloo G, Nanotechnology 16, 595 (2005). http://doi.org/10.1088/0957-4484/16/4/043
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Preparation of nanocrystalline titania powder by aerosol pyrolysis of titanium alkoxide”. Ahonen PP, Kauppinen EI, Deschanvres JL, Joubert JC, Van Tendeloo G, Materials Research Society symposium proceedings 520, 109 (1998)
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Probing local stoichiometry in InGaN based quantum wells of solid-state LEDs”. Jinschek JR, Bals S, Gopal V, Xus X, Kisielowski C, Microscopy and microanalysis 10, 294 (2004). http://doi.org/10.1017/S1431927604882813
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Production of carbon nanotubes with marine manganese nodule as a versatile catalyst”. Cheng J-P, Zhang XB, Ye Y, Tu JP, Liu F, Tao XY, Geise HJ, Van Tendeloo G, Microporous and mesoporous materials 81, 73 (2005). http://doi.org/10.1016/j.micromeso.2004.11.014
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Production of short carbon nanotubes with open tips by ball milling”. Pierard N, Fonseca A, Konya Z, Willems I, Van Tendeloo G, Nagy JB, Chemical physics letters 335, 1 (2001). http://doi.org/10.1016/S0009-2614(01)00004-5
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Purification of catalytically produced multi-wall nanotubes”. Colomer J-F, Piedigrosso P, Willems I, Journet C, Bernier P, Van Tendeloo G, Fonseca A, Nagy JB, Journal of the Chemical Society : Faraday transactions: physical chemistry and chemical physics 94, 3753 (1998). http://doi.org/10.1039/a806804f
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Cao S (2010) Quantitative 3D analysis of Ni4Ti3 precipitate morphology and distribution in Ni-Ti by FIB/SEM slice-and-view. Antwerpen
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Wang W-C (2011) Quantitative analysis of electron exit waves with single atom sensitivity. Antwerpen
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de Backer A (2015) Quantitative atomic resolution electron microscopy using advanced statistical techniques. Antwerpen
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Quantitative determination of strain fields around Ni4Ti3 precipitates in NiTi”. Tirry W, Schryvers D, Acta materialia 53, 1041 (2005). http://doi.org/10.1016/j.actamat.2004.10.049
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Quantitative determination of the crystal structure of Ni4Ti3 precipitates”. Tirry W, Schryvers D, Jorissen K, Lamoen D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 438, 517 (2006). http://doi.org/10.1016/j.msea.2006.02.063
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Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
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Heidari Mezerji H (2012) Quantitative electron tomography of nanoparticles. Antwerpen
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Quantitative Landau potentials for the martensitic transformation in Ni-Al”. Salje EKH, Zhang H, Schryvers D, Bartova B, Applied physics letters 90, 221903 (2007). http://doi.org/10.1063/1.2743927
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Martí,nez Alanis GT (2015) Quantitative model-based high angle annular dark field scanning transmission electron microscopy. Antwerpen
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Quantum-size effects on T-c in superconducting nanofilms”. Shanenko AA, Croitoru MD, Peeters FM, Europhysics letters 76, 498 (2006). http://doi.org/10.1209/epl/i2006-10274-6
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Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET”. Balaban SN, Pokatilov EP, Fomin VM, Gladilin VN, Devreese JT, Magnus W, Schoenmaker W, van Rossum M, Sorée B, Solid-State Electronics 46, 435 (2002). http://doi.org/10.1016/S0038-1101(01)00117-4
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