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“Hysteresis in mesoscopic superconducting disks: the Bean-Livingston barrier”. Deo PS, Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 59, 6039 (1999). http://doi.org/10.1103/PhysRevB.59.6039
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 59
DOI: 10.1103/PhysRevB.59.6039
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“Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Microscopy of Semiconducting Materials 107SPRINGER PROCEEDINGS IN PHYSICS, 303 (2005)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT)
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“The remarkable and intriguing resistance to oxidation of 2D ordered hcp Co nanocrystals: a new intrinsic property”. Lisiecki I, Turner S, Bals S, Pileni MP, Van Tendeloo G, Chemistry of materials 21, 2335 (2009). http://doi.org/10.1021/cm900284u
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 28
DOI: 10.1021/cm900284u
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“Streaming-to-accumulation transition in a two-dimensional electron system in a polar semiconductor”. Wen X, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 46, 7571 (1992). http://doi.org/10.1103/PhysRevB.46.7571
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 13
DOI: 10.1103/PhysRevB.46.7571
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“Strong-coupling analysis of large bipolarons in two and three dimensions”. Verbist G, Smondyrev MA, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 45, 5262 (1992). http://doi.org/10.1103/PhysRevB.45.5262
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 68
DOI: 10.1103/PhysRevB.45.5262
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“Structural and chemical effects on EELS L3,2 ionization edges in Ni-based intermetallic compounds”. Potapov PL, Kulkova SE, Schryvers D, Verbeeck J, Physical review : B : condensed matter and materials physics 64, 184110 (2001). http://doi.org/10.1103/PhysRevB.64.184110
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 44
DOI: 10.1103/PhysRevB.64.184110
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“Tuning the pore size of ink-bottle mesopores by atomic layer deposition”. Dendooven J, Goris B, Devloo-Casier K, Levrau E, Biermans E, Baklanov MR, Ludwig KF, van der Voort P, Bals S, Detavernier C, Chemistry of materials 24, 1992 (2012). http://doi.org/10.1021/cm203754a
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 52
DOI: 10.1021/cm203754a
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“Antisite Disorder and Bond Valence Compensation in Li2FePO4F Cathode for Li-Ion Batteries”. Karakulina OM, Khasanova NR, Drozhzhin OA, Tsirlin AA, Hadermann J, Antipov EV, Abakumov AM, Chemistry Of Materials 28, 7578 (2016). http://doi.org/10.1021/acs.chemmater.6b03746
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 10
DOI: 10.1021/acs.chemmater.6b03746
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“Self‐Assembly of Atomically Thin Chiral Copper Heterostructures Templated by Black Phosphorus”. Nerl HC, Pokle A, Jones L, Müller‐Caspary K, Bos KHW, Downing C, McCarthy EK, Gauquelin N, Ramasse QM, Lobato I, Daly D, Idrobo JC, Van Aert S, Van Tendeloo G, Sanvito S, Coleman JN, Cucinotta CS, Nicolosi V, Advanced functional materials 29, 1903120 (2019). http://doi.org/10.1002/adfm.201903120
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 1
DOI: 10.1002/adfm.201903120
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“Tuning Size and Seed Position in Small Silver Nanorods”. Sánchez-Iglesias A, Zhuo X, Albrecht W, Bals S, Liz-Marzán LM, ACS materials letters 2, 1246 (2020). http://doi.org/10.1021/acsmaterialslett.0c00388
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 9
DOI: 10.1021/acsmaterialslett.0c00388
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“Controlled Alloying of Au@Ag Core–Shell Nanorods Induced by Femtosecond Laser Irradiation”. González‐Rubio G, Díaz‐Núñez P, Albrecht W, Manzaneda‐González V, Bañares L, Rivera A, Liz‐Marzán LM, Peña‐Rodríguez O, Bals S, Guerrero‐Martínez A, Advanced Optical Materials , 2002134 (2021). http://doi.org/10.1002/adom.202002134
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.875
Times cited: 10
DOI: 10.1002/adom.202002134
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“Two-Dimensional CdSe-PbSe Heterostructures and PbSe Nanoplatelets: Formation, Atomic Structure, and Optical Properties”. Salzmann BBV, Wit J de, Li C, Arenas-Esteban D, Bals S, Meijerink A, Vanmaekelbergh D, The journal of physical chemistry: C : nanomaterials and interfaces 126, 1513 (2022). http://doi.org/10.1021/acs.jpcc.1c09412
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.7
Times cited: 12
DOI: 10.1021/acs.jpcc.1c09412
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“High-temperature multigap superconductivity in two-dimensional metal borides”. Sevik C, Bekaert J, Petrov M, Milošević, MV, Physical review materials 6, 024803 (2022). http://doi.org/10.1103/PhysRevMaterials.6.024803
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.4
Times cited: 4
DOI: 10.1103/PhysRevMaterials.6.024803
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“Unusual structural rearrangement and superconductivity in infinite layer cuprate superlattices”. Samal D, Gauquelin N, Takamura Y, Lobato I, Arenholz E, Van Aert S, Huijben M, Zhong Z, Verbeeck J, Van Tendeloo G, Koster G, Physical review materials 7, 054803 (2023). http://doi.org/10.1103/PhysRevMaterials.7.054803
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
DOI: 10.1103/PhysRevMaterials.7.054803
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“Organic Molecular Glues to Design Three-Dimensional Cubic Nano-assemblies of Magnetic Nanoparticles”. Chowdhury MS, Esteban DA, Amin R, Román-Freijeiro C, Rösch EL, Etzkorn M, Schilling M, Ludwig F, Bals S, Salgueiriño V, Lak A, Chemistry of Materials 36, 6865 (2024). http://doi.org/10.1021/acs.chemmater.4c00770
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Impact Factor: 8.6
DOI: 10.1021/acs.chemmater.4c00770
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“Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films”. Moshnyaga V, Damaschke B, Shapoval O, Belenchuk A, Faupel J, Lebedev OI, Verbeeck J, Van Tendeloo G, Mücksch M, Tsurkan V, Tidecks R, Samwer K, Nature materials 2, 247 (2003). http://doi.org/10.1038/nmat859
Abstract: 'Colossal magnetoresistance' in perovskite manganites such as La0.7Ca0.3MnO3 (LCMO), is caused by the interplay of ferro-paramagnetic, metal-insulator and structural phase transitions. Moreover, different electronic phases can coexist on a very fine scale resulting in percolative electron transport. Here we report on (LCMO)(1-x):(MgO)(x) (0 < x less than or equal to 0.8) epitaxial nano-composite films in which the structure and magnetotransport properties of the manganite nanoclusters can be tuned by the tensile stress originating from the MgO second phase. With increasing x, the lattice of LCMO was found to expand, yielding a bulk tensile strain. The largest colossal magnetoresistance of 10(5)% was observed at the percolation threshold in the conductivity at x(c) approximate to 0.3, which is coupled to a structural phase transition from orthorhombic (0 < x less than or equal to 0.1) to rhombohedral R (3) over barc structure (0.33 less than or equal to x less than or equal to 0.8). An increase of the Curie temperature for the R (3) over barc phase was observed. These results may provide a general method for controlling the magnetotransport properties of manganite-based composite films by appropriate choice of the second phase.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 39.737
Times cited: 177
DOI: 10.1038/nmat859
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“Structural phase transition and spontaneous interface reconstruction in La2/3Ca1/3MnO3/BaTiO3 superlattices”. Turner S, Lebedev OI, Verbeeck J, Gehrke K, Moshnyaga V, Van Tendeloo G, Physical review : B : condensed matter and materials physics 87, 035418 (2013). http://doi.org/10.1103/PhysRevB.87.035418
Abstract: (La2/3Ca1/3MnO3)n/(BaTiO3)m (LCMOn/BTOm) superlattices on MgO and SrTiO3 substrates with different layer thicknesses (n = 10, 38, 40 and m = 5, 18, 20) have been grown by metal organic aerosol deposition (MAD) and have been fully characterized down to the atomic scale to study the interface characteristics. Scanning transmission electron microscopy combined with spatially resolved electron energy-loss spectroscopy provides clear evidence for the existence of atomically sharp interfaces in MAD grown films, which exhibit epitaxial growth conditions, a uniform normal strain, and a fully oxidized state. Below a critical layer thickness the LCMO structure is found to change from the bulk Pnma symmetry to a pseudocubic R3̅ c symmetry. An atomically flat interface reconstruction consisting of a single Ca-rich atomic layer is observed on the compressively strained BTO on LCMO interface, which is thought to partially neutralize the total charge from the alternating polar atomic layers in LCMO as well as relieving strain at the interface. No interface reconstruction is observed at the tensile strained LCMO on BTO interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 12
DOI: 10.1103/PhysRevB.87.035418
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“Mixed (Sr1-xCax)33Bi24Al48O141 fullerenoids: the defect structure analysed by (S)TEM techniques”. Lebedev OI, Bals S, Van Tendeloo G, Snoeck GE, Retoux R, Boudin S, Hervieu M, International journal of materials research 97, 978 (2006). http://doi.org/10.3139/146.101328
Abstract: (Sr1-xCax)(33)Bi-24,partial derivative Al48O141+3 partial derivative/2 fullerenoid solid solutions have been synthesized and the effect of partial substitution of Sr by Ca has been characterized by (scanning) transmission electron microscopy, applying different imaging methods. Most of the defects commonly observed in face centered cubic compounds, have also been observed in (Sr1-xCax)(33)Bi24-partial derivative Al48O141+3 partial derivative/2. Based on purely geometrical and topological models, structural presentations for the coherent twin boundaries and stacking faults have been constructed on the basis of complex spherical “Al84O210” units. The results are compared to defects observed in the crystallite fullerite C-60.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.681
Times cited: 1
DOI: 10.3139/146.101328
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“Vertically oriented CuO/ZnO nanorod arrays : from plasma-assisted synthesis to photocatalytic H2 production”. Simon Q, Barreca D, Gasparotto A, Maccato C, Montini T, Gombac V, Fornasiero P, Lebedev OI, Turner S, Van Tendeloo G, Journal of materials chemistry 22, 11739 (2012). http://doi.org/10.1039/c2jm31589k
Abstract: 1D CuO/ZnO nanocomposites were grown on Si(100) substrates by means of an original two-step synthetic strategy. ZnO nanorod (NR) arrays were initially deposited by plasma enhanced-chemical vapor deposition (PE-CVD) from an ArO2 atmosphere. Subsequently, tailored amounts of CuO were dispersed over zinc oxide matrices by radio frequency (RF)-sputtering of Cu from Ar plasmas, followed by thermal treatment in air. A thorough characterization of the obtained systems was carried out by X-ray photoelectron and X-ray excited-Auger electron spectroscopies (XPS and XE-AES), glancing incidence X-ray diffraction (GIXRD), field emission-scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDXS), atomic force microscopy (AFM), transmission electron microscopy (TEM), electron diffraction (ED) and energy filtered-TEM (EF-TEM). Pure and highly oriented CuO/ZnO NR arrays, free from ternary ZnCuO phases and characterized by a copper(II) oxide content controllable as a function of the adopted RF-power, were successfully obtained. Interestingly, the structural relationships between the two oxides at the CuO/ZnO interface were found to depend on the overall CuO loading. The obtained nanocomposites displayed promising photocatalytic performances in H2 production by reforming of ethanolwater solutions under simulated solar illumination, paving the way to the sustainable conversion of solar light into chemical energy.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 74
DOI: 10.1039/c2jm31589k
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“Nonlayered CdSe flakes homojunctions”. Jin B, Liang F, Hu Z-Y, Wei P, Liu K, Hu X, Van Tendeloo G, Lin Z, Li H, Zhou X, Xiong Q, Zhai T, Advanced Functional Materials 30, 1908902 (2020). http://doi.org/10.1002/ADFM.201908902
Abstract: 2D homojunctions have stimulated extensive attention because of their perfect thermal and lattice matches, as well as their tunable band structures in 2D morphology, which provide fascinating opportunities for novel electronics and optoelectronics. Recently, 2D nonlayered materials have attracted the attention of researchers owing to their superior functional applications and diverse portfolio of the 2D family. Therefore, 2D nonlayered homojunctions would open the door to a rich spectrum of exotic 2D materials. However, they are not investigated due to their extremely difficult synthesis methods. Herein, nonlayered CdSe flakes homojunctions are obtained via self-limited growth with InCl3 as a passivation agent. Interestingly, two pieces of vertical wurtzite-zinc blende (WZ-ZB) homojunctions epitaxially integrate into WZ/ZB lateral junctions. These homojunctions show a divergent second-harmonic generation intensity, strongly correlated to the multiple twinned ZB phase, as identified by aberration-corrected scanning transmission electron microscopy and theoretical calculations. Impressively, the photodetector based on this WZ/ZB CdSe homojunction shows excellent performances, integrating a high photoswitching ratio (3.4 x 10(5)) and photoresponsivity (3.7 x 10(3) A W-1), suggesting promising potential for applications in electronics and optoelectronics.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19
Times cited: 8
DOI: 10.1002/ADFM.201908902
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“Exploiting the novel electronic and magnetic structure of C3Nvia functionalization and conformation”. Bafekry A, Stampfl C, Shayesteh SF, Peeters FM, Advanced Electronic Materials 5, 1900459 (2019). http://doi.org/10.1002/AELM.201900459
Abstract: 2D polyaniline, C3N, is of recent high interest due to its unusual properties and potential use in various technological applications. In this work, through systematic first-principles calculations, the atomic, electronic, and magnetic structure of C3N and the changes induced due to functionalization by the adsorption of hydrogen, oxygen, and fluorine, for different coverages and sites, as well as on formation of nanoribbons including the effect of adsorbed hydrogen and oxygen, and the effect of strain, are investigated. Among other interesting phenomena, for hydrogen adsorption, a semiconductor-to-topological insulator transition, where two Dirac-points appear around the Fermi level, as well as ferromagnetic ordering for both hydrogen and oxygen functionalization, is identified. Considering C3N nanoribbons, adsorption of H leads to significant changes in the electronic properties, such as transforming the structures from semiconductor to metallic. Furthermore, investigating the effect of strain on the physical properties, it is found that the band gap can be significantly altered and controlled. The present findings predict that a wide variation in the magnetic and electronic structure of C3N can be achieved by adatom functionalization and conformation indicating its high potential for use in various technological applications, ranging from catalysis, energy storage, and nanoelectronic devices.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 4.193
Times cited: 39
DOI: 10.1002/AELM.201900459
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“Liquid-alloy-assisted growth of 2D ternaryGa2In4S9 toward high-performance UV photodetection”. Wang F, Gao T, Zhang Q, Hu Z-Y, Jin B, Li L, Zhou X, Li H, Van Tendeloo G, Zhai T, Advanced materials 31, 1806306 (2019). http://doi.org/10.1002/ADMA.201806306
Abstract: 2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga2In4S9 flakes of only a few atomic layers thick (approximate to 2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga2In4S9 flakes display outstanding UV detection ability (R-lambda = 111.9 A W-1, external quantum efficiency = 3.85 x 10(4)%, and D* = 2.25 x 10(11) Jones@360 nm) with a fast response speed (tau(ring) approximate to 40 ms and tau(decay) approximate to 50 ms). In addition, Ga2In4S9-based phototransistors exhibit a responsivity of approximate to 10(4) A W-1@360 nm above the critical back-gate bias of approximate to 0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga2In4S9 nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 29
DOI: 10.1002/ADMA.201806306
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“Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
Abstract: 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 2
DOI: 10.1016/S0168-583X(96)00506-X
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“Crystal growth of the Nowotny chimney ladder phase Fe2Ge3 : exploring new Fe-based narrow-gap semiconductor with promising thermoelectric performance”. Verchenko VY, Wei Z, Tsirlin AA, Callaert C, Jesche A, Hadermann J, Dikarev EV, Shevelkov AV, Chemistry of materials 29, 9954 (2017). http://doi.org/10.1021/ACS.CHEMMATER.7B03300
Abstract: <script type='text/javascript'>document.write(unpmarked('A new synthetic approach based on chemical transport reactions has been introduced to obtain the Nowotny chimney ladder phase Fe2Ge3 in the form of single crystals and polycrystalline powders. The single crystals possess the stoichiometric composition and the commensurate chimney ladder structure of the Ru2Sn3 type in contrast to the polycrystalline samples that are characterized by a complex microstructure. In compliance with the 18-n electron counting rule formulated for T-E intermetallics, electronic structure calculations reveal a narrow-gap semiconducting behavior of Fe2Ge3 favorable for high thermoelectric performance. Measurements of transport and thermoelectric properties performed on the polycrystalline samples confirm the formation of a narrow band gap of similar to 30 meV and reveal high absolute values of the Seebeck coefficient at elevated temperatures. Low glass-like thermal conductivity is observed in a wide temperature range that might be caused by the underlying complex microstructure.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 11
DOI: 10.1021/ACS.CHEMMATER.7B03300
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“Improving the redox response stability of ceria-zirconia nanocatalysts under harsh temperature conditions”. Arias-Duque C, Bladt E, Munoz MA, Hernandez-Garrido JC, Cauqui MA, Rodriguez-Izquierdo JM, Blanco G, Bals S, Calvino JJ, Perez-Omil JA, Yeste MP, Chemistry of materials 29, 9340 (2017). http://doi.org/10.1021/ACS.CHEMMATER.7B03336
Abstract: <script type='text/javascript'>document.write(unpmarked('By depositing ceria on the surface of yttrium stabilized zirconia (YSZ) nanocrystals and further activation under high-temperature reducing conditions, a 13% mol. CeO2/YSZ catalyst structured as subnanometer thick, pyrochlore-type, ceria-zirconia islands has been prepared. This nanostructured catalyst depicts not only high oxygen storage capacity (OSC) values but, more importantly, an outstandingly stable redox response upon oxidation and reduction treatments at very high temperatures, above 1000 degrees C. This behavior largely improves that observed on conventional ceria-zirconia solid solutions, not only of the same composition but also of those with much higher molar cerium contents. Advanced scanning transmission electron microscopy (STEM-XEDS) studies have revealed as key not only to detect the actual state of the lanthanide in this novel nanocatalyst but also to rationalize its unusual resistance to redox deactivation at very high temperatures. In particular, high-resolution X-ray dispersive energy studies have revealed the presence of unique bilayer ceria islands on top of the surface of YSZ nanocrystals, which remain at surface positions upon oxidation and reduction treatments up to 1000 degrees C. Diffusion of ceria into the bulk of these crystallites upon oxidation at 1100 degrees C irreversibly deteriorates both the reducibility and OSC of this nanostructured catalyst.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 20
DOI: 10.1021/ACS.CHEMMATER.7B03336
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“Epitaxial stress-free growth of high crystallinity ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) substrate”. Li L, Liao Z, Gauquelin N, Minh Duc Nguyen, Hueting RJE, Gravesteijn DJ, Lobato I, Houwman EP, Lazar S, Verbeeck J, Koster G, Rijnders G, Advanced Materials Interfaces 5, 1700921 (2018). http://doi.org/10.1002/ADMI.201700921
Abstract: <script type='text/javascript'>document.write(unpmarked('Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O-3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O-3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 15
DOI: 10.1002/ADMI.201700921
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“Synthesis of Li-Rich NMC : a comprehensive study”. Pimenta V, Sathiya M, Batuk D, Abakumov AM, Giaume D, Cassaignon S, Larcher D, Tarascon J-M, Chemistry of materials 29, 9923 (2017). http://doi.org/10.1021/ACS.CHEMMATER.7B03230
Abstract: <script type='text/javascript'>document.write(unpmarked('Li-rich NMC are considered nowadays as one of the most promising candidates for high energy density cathodes. One significant challenge is nested in adjusting their synthesis conditions to reach optimum electrochemical performance, but no consensus has been reached yet on the ideal synthesis protocol. Herein, we revisited the elaboration of Li-rich NMC electrodes by focusing on the science involved through each synthesis steps using carbonate Ni0.1625Mn0.675Co0.1625CO3 precursor coprecipitation combined with solid state synthesis. We demonstrated the effect of precursors concentration on the kinetics of the precipitation reaction and provided clues to obtain spherically agglomerated NMC carbonates of different sizes. Moreover, we highlighted the strong impact of the Li2CO3/NMC carbonate ratio on the morphology and particles size of Li-rich NMC and subsequently on their electrochemical performance. Ratio of 1.35 was found to reproducibly give the best performance with namely a first discharge capacity of 269 mAh g(-1) and capacity retention of 89.6% after 100 cycles. We hope that our results, which reveal how particle size, morphology, and phase composition affect the materials electrochemical performance, will help in reconciling literature data while providing valuable fundamental information for up scaling approaches.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 23
DOI: 10.1021/ACS.CHEMMATER.7B03230
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“Magnetic field dependence of the atomic collapse state in graphene”. Moldovan D, Masir MR, Peeters FM, 2D materials 5, 015017 (2018). http://doi.org/10.1088/2053-1583/AA9647
Abstract: <script type='text/javascript'>document.write(unpmarked('Quantum electrodynamics predicts that heavy atoms (Z \u003E Z(c) approximate to 170) will undergo the process of atomic collapse where electrons sink into the positron continuum and a new family of so-called collapsing states emerges. The relativistic electrons in graphene exhibit the same physics but at a much lower critical charge (Z(c) approximate to 1) which has made it possible to confirm this phenomenon experimentally. However, there exist conflicting predictions on the effect of a magnetic field on atomic collapse. These theoretical predictions are based on the continuum Dirac-Weyl equation, which does not have an exact analytical solution for the interplay of a supercritical Coulomb potential and the magnetic field. Approximative solutions have been proposed, but because the two effects compete on similar energy scales, the theoretical treatment varies depending on the regime which is being considered. These limitations are overcome here by starting from a tight-binding approach and computing exact numerical results. By avoiding special limit cases, we found a smooth evolution between the different regimes. We predict that the atomic collapse effect persists even after the magnetic field is activated and that the critical charge remains unchanged. We show that the atomic collapse regime is characterized: (1) by a series of Landau level anticrossings and (2) by the absence of root B scaling of the Landau levels with regard to magnetic field strength.'));
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 6.937
Times cited: 13
DOI: 10.1088/2053-1583/AA9647
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“New solid electrolyte Na9Al(MoO4)6 : structure and Na+ ion conductivity”. Savina AA, Morozov VA, Buzlukov AL, Arapova IY, Stefanovich SY, Baklanova YV, Denisova TA, Medvedeva NI, Bardet M, Hadermann J, Lazoryak BI, Khaikina EG, Chemistry of materials 29, 8901 (2017). http://doi.org/10.1021/ACS.CHEMMATER.7B03989
Abstract: <script type='text/javascript'>document.write(unpmarked('Solid electrolytes are important materials with a wide range of technological applications. This work reports the crystal structure and electrical properties of a new solid electrolyte Na9Al(MoO4)(6). The monoclinic Na9Al(MoO4)(6) consists of isolated polyhedral, [Al(MoO4)(6)](9-) clusters composed of a central AlO6 octahedron sharing vertices with six MoO4 tetrahedra to form a three-dimensional framework. The AlO6 octahedron also shares edges with one NalO(6) octahedron and two Na2O(6) octahedra. Na3-Na5 atoms are located in the framework cavities. The structure is related to that of sodium ion conductor II-Na3Fe2(AsO4)(3). High-temperature conductivity measurements revealed that the conductivity (sigma) of Na9Al(MoO4)(6) at 803 K equals 1.63 X 10(-2) S cm(-1). The temperature behavior of the Na-23 and Al-27 nuclear magnetic resonance spectra and the spin-lattice relaxation rates of the Na-23 nuclei indicate the presence of fast Na+ ion diffusion in the studied compound. At T\u003C490 K, diffusion occurs by means of Na+ ion jumps exclusively through the sublattice of Na3-Na5 positions, whereas Na1 and Na2 become involved in the diffusion processes (through chemical exchange with the Na3-Na5 sublattice) only at higher temperatures.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 13
DOI: 10.1021/ACS.CHEMMATER.7B03989
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“Structural characterization of SnS crystals formed by chemical vapour deposition”. Mehta AN, Zhang H, Dabral A, Richard O, Favia P, Bender H, Delabie A, Caymax M, Houssa M, Pourtois G, Vandervorst W, Journal of microscopy
T2 –, 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND 268, 276 (2017). http://doi.org/10.1111/JMI.12652
Abstract: <script type='text/javascript'>document.write(unpmarked('The crystal and defect structure of SnS crystals grown using chemical vapour deposition for application in electronic devices are investigated. The structural analysis shows the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nanometer scale thickness, and much thicker but smaller crystallites. Both show similar Raman response associated with SnS. The structural analysis with transmission electron microscopy shows that the flakes are single crystals of -SnS with [010] normal to the substrate. Parallel with the surface of the flakes, lamellae with varying thickness of a new SnS phase are observed. High-resolution transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), first-principles simulations (DFT) and nanobeam diffraction (NBD) techniques are employed to characterise this phase in detail. DFT results suggest that the phase is a strain stabilised \u0027 one grown epitaxially on the -SnS crystals. TEM analysis shows that the crystallites are also -SnS with generally the [010] direction orthogonal to the substrate. Contrary to the flakes the crystallites consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. Under high-dose electron irradiation, the SnS structure is reduced and -Sn formed. It is shown that this damage only occurs for SnS in direct contact with SiO2. Lay description SnS is a p-type semiconductor, which has attracted significant interest for electronic devices due to its unique properties, low-toxicity and abundance of Sn in nature. Although in the past it has been most extensively studied as the absorber material in solar cells, it has recently garnered interest for application as a p-type two-dimensional semiconductor in nanoelectronic devices due to its anisotropic layered structure similar to the better known phosphorene. Tin sulphide can take the form of several phases and the electronic properties of the material depend strongly on its crystal structure. It is therefore crucial to study the crystal structure of the material in order to predict the electronic properties and gain insight into the growth mechanism. In this work, SnS crystals deposited using a chemical vapour deposition technique are investigated extensively for their crystal and defect structure using transmission electron microscopy (TEM) and related techniques. We find the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nm scale thickness, and much thicker but smaller crystallites. The flakes are single crystals of -SnS and contain lamellae with varying thickness of a different phase which appear to be -SnS at first glance. High-resolution scanning transmission electron microscopy is used to characterise these lamellae where the annular bright field (ABF) mode better reveals the position of the sulphur columns. The sulphur columns in the lamellae are found to be shifted relative to the -SnS structure which indicates the formation of a new phase which is a distorted version of the phase which we tentatively refer to as \u0027-SnS. Simulations based on density functional theory (DFT) are used to model the interface and a similar shift of sulphur columns in the -SnS layer is observed which takes place as a result of strong interaction at the interface between the two phases resulting in strain transfer. Nanobeam electron diffraction (NBD) is used to map the lattice mismatch in the thickness of the flakes which reveals good in-plane matching and some expansion out-of-plane in the lamellae. Contrary to the flakes the crystallites are made solely of -SnS and consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. At high electron doses, SnS is reduced to -Sn, however the damage occurs only for SnS in direct contact with SiO2.'));
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.692
Times cited: 2
DOI: 10.1111/JMI.12652
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