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Author |
Koster, G.; Verbist, K.; Rijnders, G.; Rogalla, H.; Van Tendeloo, G.; Blank, D.H.A. |
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Title |
Structure and properties of (Sr,Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Physica: C : superconductivity |
Abbreviated Journal |
Physica C |
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Volume |
353 |
Issue |
3-4 |
Pages |
167-183 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract  |
We report on the preparation of CuBa(2)(Sr(x)Ca(1-x))(n)Cu(n-1)O(y) compounds by fabrication of (Ba,Sr,Ca)CuO(2) superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the applicability of PLD to atomic engineering as well as the fabrication of artificial superconductors is demonstrated. The (Sr,Ca)CuO(2)-BaCuO(2) superlattices are characterized by X-ray diffraction, high-resolution electron microscopy (HREM) and selected area electron diffraction. The superlattice period has been deduced from electron diffraction patterns and XRD measurements. For Sr containing films, the best growth behavior is observed and films with the highest degree of crystallinity are obtained, whereas superconductivity is only found in less crystalline, Ca containing films. Under some deposition conditions and depending on the amount of Ba containing layers in the superlattice, it was observed that the BaCuO(2) material is converted to Ba(2)CuO(4-delta). Image simulations to interpret the HREM contrast are performed. (C) 2001 Elsevier Science B.V. All rights reserved. |
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Publisher |
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Place of Publication |
Amsterdam |
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Wos |
000168861100003 |
Publication Date |
2002-07-25 |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4534; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.404 |
Times cited |
8 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.404; 2001 IF: 0.806 |
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Call Number |
UA @ lucian @ c:irua:103417 |
Serial |
3293 |
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Author |
Janssens, K.L.; Partoens, B.; Peeters, F.M. |
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Title |
Magneto-excitons in planar type II quantum dots |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
64 |
Issue |
15 |
Pages |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We study an exciton in a type-II quantum dot, where the electron is confined in the dot, but the hole is located in the barrier material. The exciton properties are studied as a function of a perpendicular magnetic field using a Hartree-Fock mesh calculation. Our model system consists of a planar quantum disk. Angular momentum (l) transitions are predicted with increasing magnetic field. We, also study the transition from a type-I to a type-H quantum dot which is induced by changing the confinement potential of the hole. For sufficiently large magnetic fields a reentrant behavior is found from l(h) = 0 to l(h) not equal 0 and back to l(h) = 0, which results in a transition from type II to type I. |
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Place of Publication |
Lancaster, Pa |
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Wos |
000171694600068 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
56 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.836; 2001 IF: NA |
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Call Number |
UA @ lucian @ c:irua:37281 |
Serial |
1900 |
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Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
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Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
481-484 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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Wos |
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Publication Date |
0000-00-00 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0818-4 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
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Author |
Van Tendeloo, G.; Garlea, O.; Darie, C.; Bougerol-Chaillout, C.; Bordet, P. |
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Title |
The fine structure of YCuO2+x delafossite determined by synchrotron powder diffraction and electron microscopy |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
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Volume |
156 |
Issue |
2 |
Pages |
428-436 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
YCuO2 delafossite crystallizes into two stacking variants; hexagonal 2H or rhombohedral 3R, depending on the preparation conditions. The structure of the fully oxygenated material YCuO2.50 has been determined as orthorhombic (a(O) = 6.1961 Angstrom; b(O) = 11.2158 Angstrom; c(O) = 7.1505 Angstrom; space group Pnma). The structure is based on the hexagonal 2H structure (a(O) = a(H)root3; b(O) = c(H); c(O) = 2a(H)). Upon incomplete oxidation, a different YCuOZ phase with ideal composition YCuO2.33 and lattice parameters a(H root)3, a(H)root3, c(H) is also formed. Diffraction patterns are often very complex because of the presence of planar defects and intergrowth of both phases. Under electron beam irradiation, oxygen is released from the structure and one phase gradually transforms into the other. (C) 2001 Academic Press. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
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Wos |
000167252000025 |
Publication Date |
2002-09-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-4596; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.299 |
Times cited |
33 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.299; 2001 IF: 1.614 |
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Call Number |
UA @ lucian @ c:irua:103425 |
Serial |
3581 |
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Author |
Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C. |
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Title |
Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
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Volume |
222 |
Issue |
3 |
Pages |
558-564 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000166701500020 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-0248; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.751 |
Times cited |
12 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.751; 2001 IF: 1.283 |
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Call Number |
UA @ lucian @ c:irua:104211 |
Serial |
3240 |
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