Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate |
1996 |
Applied surface science |
102 |
9 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction |
1997 |
Journal of crystal growth |
172 |
29 |
UA library record; WoS full record; WoS citing articles |
Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.; Frangis, N.; van Landuyt, J. |
High crystalline quality erbium silicide films on (100) silicon grown in high vacuum |
1996 |
Applied surface science |
102 |
14 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
1998 |
Applied physics letters |
72 |
16 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of β-SiC at 9500C and structural characterization |
1996 |
Nuclear instruments and methods in physics research |
B112 |
|
UA library record |
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
Microstructure of Mn-doped, spin-cast FeSi2 |
1997 |
Journal of electron microscopy |
46 |
3 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
New erbium silicide superstructures: a study by high resolution electron microscopy |
1996 |
Physica status solidi: A: applied research |
158 |
6 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Van Tendeloo, G.; Manolikas, C.; Amelinckx, S. |
Structural and microstructural aspects of Six(Ta, Nb)Te2 |
1998 |
Journal of solid state chemistry |
139 |
2 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
120 |
2 |
UA library record; WoS full record; WoS citing articles |
Gkanatsiou, A.; Lioutas, C.B.; Frangis, N.; Polychroniadis, E.K.; Prystawko, P.; Leszczynski, M.; Altantzis, T.; Van Tendeloo, G. |
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures |
2019 |
Materials science in semiconductor processing |
91 |
1 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
Structural characterisation of erbium silicide thin films of an Si(111) substrate |
1996 |
Journal of alloys and compounds |
234 |
14 |
UA library record; WoS full record; WoS citing articles |
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. |
Photoelectric and electrical responses of several erbium silicide/silicon interfaces |
1996 |
Applied surface science
T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE |
102 |
3 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |