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Author Farias, G.A.; Peeters, F.M. doi  openurl
  Title Structural transitions in a finite classical two-dimensional system Type A1 Journal article
  Year 1996 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 100 Issue Pages 711-715  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos A1996VU47000008 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.897 Times cited 25 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:15788 Serial 3269  
Permanent link to this record
 

 
Author Satto, S.; Jansen, J.; Lexcellent, C.; Schryvers, D. doi  openurl
  Title Structure refinement of L21 Cu-Zn-Al austenite, using dynamical electron diffraction data Type A1 Journal article
  Year 2000 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 116 Issue Pages 273-277  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000089747900008 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 7 Open Access  
  Notes Approved Most recent IF: 1.554; 2000 IF: 1.271  
  Call Number UA @ lucian @ c:irua:48374 Serial 3317  
Permanent link to this record
 

 
Author Goutenoire, F.; Maignan, A.; Van Tendeloo, G.; Martin, C.; Michel, C.; Hervieu, M.; Raveau, B. openurl 
  Title Substitution of mercury for thallium in the 2223 cuprate: the 130K superconductor Tl1.6Hg0.4Ba2Cu3O10-x Type A1 Journal article
  Year 1994 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 90 Issue Pages 47-50  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos A1994ND06400010 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.897 Times cited 16 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:10031 Serial 3345  
Permanent link to this record
 

 
Author Ivanov, V.A.; Misko, V.R.; Fomin, V.M.; Devreese, J.T. doi  openurl
  Title Superconductivity in mesoscopic high-Tc superconducting particles Type A1 Journal article
  Year 2003 Publication Solid State Communications Abbreviated Journal (up) Solid State Commun  
  Volume 125 Issue Pages 439-444  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000181023700017 Publication Date 2003-01-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.554; 2003 IF: 1.602  
  Call Number UA @ lucian @ c:irua:40871 Serial 3372  
Permanent link to this record
 

 
Author Khasanova, N.R.; Kovba, M.L.; Putilin, S.N.; Antipov, E.V.; Lebedev, O.I.; Van Tendeloo, G. doi  openurl
  Title Synthesis, structure and properties of layered bismuthates: (Ba,K)3Bi2O7 and (Ba,K)2BiO4 Type A1 Journal article
  Year 2002 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 122 Issue 3/4 Pages 189-193  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000175844000016 Publication Date 2002-10-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.554; 2002 IF: 1.671  
  Call Number UA @ lucian @ c:irua:54750 Serial 3462  
Permanent link to this record
 

 
Author Pachoud, E.; Bréard, Y.; Martin, C.; Maignan, A.; Abakumov, A.M.; Suard, E.; Smith, R.I.; Suchomel, M.R. pdf  doi
openurl 
  Title Bi0.75Sr0.25FeO3-\delta : revealing order/disorder phenomena by combining diffraction techniques Type A1 Journal article
  Year 2012 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 152 Issue 5 Pages 331-336  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The local and long range structure of polycrystalline samples of Bi0.75Sr0.25FeO3-delta has been probed by neutron and synchrotron X-ray diffraction coupled with transmission electron microscopy. It is found that the long range structure on average can be described by the cubic space group Pm-3m (a(p) congruent to 3.951 angstrom). However, the refinements revealed large atomic displacements for the (Bi, Sr) cations and the oxygen atoms from their ideal positions. The electron microscopy study indicates the existence of local phenomena like local ordering of oxygen vacancies, which are segregated at the randomly spaced parallel (FeO2-delta) planes, or the existence of region of different symmetry, probably R3c. At room temperature, the compound exhibits G-type antiferromagnetism (T-N congruent to 650 K) with a magnetic moment of congruent to 3.7 mu(B). (C) 2012 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000301329200001 Publication Date 2011-12-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 6 Open Access  
  Notes Approved Most recent IF: 1.554; 2012 IF: 1.534  
  Call Number UA @ lucian @ c:irua:97820 Serial 3516  
Permanent link to this record
 

 
Author Matulis, A.; Peeters, F.M. doi  openurl
  Title Wigner crystallization in the two electron quantum dot Type A1 Journal article
  Year 2001 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 117 Issue Pages 655-660  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000167475900006 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 34 Open Access  
  Notes Approved Most recent IF: 1.554; 2001 IF: 1.381  
  Call Number UA @ lucian @ c:irua:37305 Serial 3920  
Permanent link to this record
 

 
Author Guda, A.A.; Smolentsev, N.; Verbeeck, J.; Kaidashev, E.M.; Zubavichus, Y.; Kravtsova, A.N.; Polozhentsev, O.E.; Soldatov, A.V. pdf  doi
openurl 
  Title X-ray and electron spectroscopy investigation of the coreshell nanowires of ZnO:Mn Type A1 Journal article
  Year 2011 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 151 Issue 19 Pages 1314-1317  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract ZnO/ZnO:Mn coreshell nanowires were studied by means of X-ray absorption spectroscopy of the Mn K- and L2,3-edges and electron energy loss spectroscopy of the O K-edge. The combination of conventional X-ray and nanofocused electron spectroscopies together with advanced theoretical analysis turned out to be fruitful for the clear identification of the Mn phase in the volume of the coreshell structures. Theoretical simulations of spectra, performed using the full-potential linear augmented plane wave approach, confirm that the shell of the nanowires, grown by the pulsed laser deposition method, is a real dilute magnetic semiconductor with Mn2+ atoms at the Zn sites, while the core is pure ZnO.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000295492200003 Publication Date 2011-06-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 12 Open Access  
  Notes We acknowledge the Helmholtz-Zentrum Berlin – Electron storage ring BESSY-II for provision of synchrotron radiation at the Russian-German beamline and financial support. This research was supported by the Russian Ministry to education and science (RPN 2.1.1. 5932 grant and RPN 2.1.1.6758 grant). N.S. and A.G. would like to thank the Russian Ministry of Education for providing the fellowships of President of Russian Federation to study abroad. We would like to thank the UGINFO computer center of Southern federal university for providing the computer time. Approved Most recent IF: 1.554; 2011 IF: 1.649  
  Call Number UA @ lucian @ c:irua:92831 Serial 3925  
Permanent link to this record
 

 
Author Govaerts, K.; Partoens, B.; Lamoen, D. pdf  url
doi  openurl
  Title Extended homologous series of Sn–O layered systems: A first-principles study Type A1 Journal article
  Year 2016 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 243 Issue 243 Pages 36-43  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)  
  Abstract Apart from the most studied tin-oxide compounds, SnO and SnO2, intermediate states have been claimed to exist for more than a hundred years. In addition to the known homologous series (Seko et al., Phys. Rev. Lett. 100, 045702 (2008)), we here predict the existence of several new compounds with an O concentration between 50 % (SnO) and 67 % (SnO2). All these intermediate compounds are constructed from removing one or more (101) oxygen layers of SnO2. Since the van der Waals (vdW) interaction is known to be important for the Sn-Sn interlayer distances, we use a vdW-corrected functional, and compare these results with results obtained with PBE and hybrid functionals. We present the electronic properties of the intermediate structures and we observe a decrease of the band gap when (i) the O concentration increases and (ii) more SnO-like units are present for a given concentration. The contribution of the different atoms to the valence and conduction band is also investigated.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000381544200007 Publication Date 2016-06-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 10 Open Access  
  Notes We gratefully acknowledge financial support from a GOA fund of the University of Antwerp. K.G. thanks the University of Antwerp for a PhD fellowship. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by the Hercules Foundation and the Flemish Government – department EWI. Approved Most recent IF: 1.554  
  Call Number c:irua:134037 Serial 4085  
Permanent link to this record
 

 
Author Petrovic, M.D.; Peeters, F.M. pdf  doi
openurl 
  Title Quantum transport in graphene Hall bars : effects of side gates Type A1 Journal article
  Year 2017 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 257 Issue 257 Pages 20-26  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau levels, and creates new propagating states in the Landau spectrum (i.e. snake states). The existence of these new states leads to an interesting modification of the bend and Hall resistances, with new quantizing plateaus appearing in close proximity of the Landau levels. The electron guiding in this system can be understood by studying the current density profiles of the incoming and outgoing modes. From the fact that guided electrons fully transmit without any backscattering (similarly to edge states), we are able to analytically predict the values of the quantized resistances, and they match the resistance data we obtain with our numerical (tight-binding) method. These insights in the electron guiding will be useful in predicting the resistances for other side-gate configurations, and possibly in other system geometries, as long as there is no backscattering of the guided states.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000401101400005 Publication Date 2017-04-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.554 Times cited Open Access  
  Notes ; This work was supported by the Methusalem programme of the Flemish government. One of us (F. M. Peeters) acknowledges correspondence with K. Novoselov. ; Approved Most recent IF: 1.554  
  Call Number UA @ lucian @ c:irua:143761 Serial 4604  
Permanent link to this record
 

 
Author Zhao, C.X.; Xu, W.; Dong, H.M.; Yu, Y.; Qin, H.; Peeters, F.M. pdf  doi
openurl 
  Title Enhancement of plasmon-photon coupling in grating coupled graphene inside a Fabry-Perot cavity Type A1 Journal article
  Year 2018 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 280 Issue 280 Pages 45-49  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We present a theoretical investigation of the plasmon-polariton modes in grating coupled graphene inside a Fabry-Perot cavity. The cavity or photon modes of the device are determined by the Finite Difference Time Domain (FDTD) simulations and the corresponding plasmon-polariton modes are obtained by applying a many-body self-consistent field theory. We find that in such a device structure, the electric field strength of the incident electromagnetic (EM) field can be significantly enhanced near the edges of the grating strips. Thus, the strong coupling between the EM field and the plasmons in graphene can be achieved and the features of the plasmon-polariton oscillations in the structure can be observed. It is found that the frequencies of the plasmon-polariton modes are in the terahertz (THz) bandwidth and depend sensitively on electron density which can be tuned by applying a gate voltage. Moreover, the coupling between the cavity photons and the plasmons in graphene can be further enhanced by increasing the filling factor of the device. This work can help us to gain an in-depth understanding of the THz plasmonic properties of graphene-based structures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000439059600008 Publication Date 2018-06-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 1 Open Access  
  Notes ; This work is supported by the National Natural Science Foundation of China (Grand No. 11604192 and Grant No. 11574319); the Center of Science and Technology of Hefei Academy of Science; the Ministry of Science and Technology of China (Grant No. 2011YQ130018); Department of Science and Technology of Yunnan Province; Chinese Academy of Sciences. ; Approved Most recent IF: 1.554  
  Call Number UA @ lucian @ c:irua:152369UA @ admin @ c:irua:152369 Serial 5024  
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Author Wang, W.; Li, L.; Kong, X.; Van Duppen, B.; Peeters, F.M. pdf  url
doi  openurl
  Title T4,4,4-graphyne : a 2D carbon allotrope with an intrinsic direct bandgap Type A1 Journal article
  Year 2019 Publication Solid state communications Abbreviated Journal (up) Solid State Commun  
  Volume 293 Issue 293 Pages 23-27  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A novel two-dimensional (2D) structurally stable carbon allotrope is proposed using first-principles calculations, which is a promising material for water purification and for electronic devices due to its unique porous structure and electronic properties. Rectangular and hexagonal rings are connected with acetylenic linkages, forming a nanoporous structure with a pore size of 6.41 angstrom, which is known as T-4,T-4,T-4-graphyne. This 2D sheet exhibits a direct bandgap of 0.63 eV at the M point, which originates from the p(z)( )atomic orbitals of carbon atoms as confirmed by a tight-binding model. Importantly, T-4,T-4,T-4-graphyne is found to be energetically more preferable than the experimentally realized beta-graphdiyne, it is dynamically stable and can withstand temperatures up to 1500 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000460909600005 Publication Date 2019-02-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 10 Open Access  
  Notes ; This work was supported by National Natural Science Foundation of China (Grant Nos. 11404214 and 11455015), the China Scholarship Council (CSC), the Science and Technology Research Foundation of Jiangxi Provincial Education Department (Grant Nos. GJJ180868 and GJJ161062) the Fonds Wetenschappelijk Onderzoek (FWO-V1), and the FLAG-ERA project TRANS2DTMD. BVD was supported by the Research Foundation – Flanders (FWO-V1) through a postdoctoral fellowship. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation – Flanders (FWO) and the Flemish Government department EWI. ; Approved Most recent IF: 1.554  
  Call Number UA @ admin @ c:irua:158503 Serial 5234  
Permanent link to this record
 

 
Author Saniz, R.; Bekaert, J.; Partoens, B.; Lamoen, D. pdf  url
doi  openurl
  Title First-principles study of defects at Σ3 grain boundaries in CuGaSe2 Type A1 Journal article
  Year 2021 Publication Solid State Communications Abbreviated Journal (up) Solid State Commun  
  Volume Issue Pages 114263  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract We present a first-principles computational study of cation–Se 3 (112) grain boundaries in CuGaSe. We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic properties. The formation energies show that the defects will tend to form preferentially at the grain boundaries, rather than in the grain interiors. We find that in Ga-rich growth conditions Cu vacancies as well as Ga at Cu and Cu at Ga antisites are mainly responsible for having the equilibrium Fermi level pinned toward the middle of the gap, resulting in carrier depletion. The Na at Cu impurity in its +1 charge state contributes to this. In Ga-poor growth conditions, on the other hand, the formation energies of Cu vacancies and Ga at Cu antisites are comparatively too high for any significant influence on carrier density or on the equilibrium Fermi level position. Thus, under these conditions, the Cu at Ga antisites give rise to a -type grain boundary. Also, their formation energy is lower than the formation energy of Na at Cu impurities. Thus, the latter will fail to act as a hole barrier preventing recombination at the grain boundary, in contrast to what occurs in CuInSe grain boundaries. We also discuss the effect of the defects on the electronic properties of bulk CuGaSe, which we assume reflect the properties of the grain interiors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000652668500013 Publication Date 2021-03-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.554 Times cited 1 Open Access OpenAccess  
  Notes Fwo; We acknowledge the financial support of FWO-Vlaanderen, Belgium through project G.0150.13. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by FWO-Vlaanderen and the Flemish Government-department EWI. Approved Most recent IF: 1.554  
  Call Number EMAT @ emat @c:irua:176544 Serial 6703  
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Author Chaves, A.; Peeters, F.M. pdf  doi
openurl 
  Title Tunable effective masses of magneto-excitons in two-dimensional materials Type A1 Journal article
  Year 2021 Publication Solid State Communications Abbreviated Journal (up) Solid State Commun  
  Volume 334 Issue Pages 114371  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Excitonic properties of Ge2H2 and Sn2H2, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the effective mass of the magneto-exciton, tunable by the field intensity. Our results show that in low effective mass two-dimensional semiconductors, such as Xanes, the applied magnetic field allows one to tune the magneto-exciton effective mass over a wide range of values.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000670329600003 Publication Date 2021-05-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.554 Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.554  
  Call Number UA @ admin @ c:irua:179762 Serial 7037  
Permanent link to this record
 

 
Author Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. pdf  doi
openurl 
  Title Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current Type A1 Journal article
  Year 2011 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 65-66 Issue Pages 64-71  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like CV characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000297182700012 Publication Date 2011-07-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.58 Times cited 2 Open Access  
  Notes ; ; Approved Most recent IF: 1.58; 2011 IF: 1.397  
  Call Number UA @ lucian @ c:irua:92866 Serial 433  
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Author de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. doi  openurl
  Title Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs Type A1 Journal article
  Year 1996 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 40 Issue Pages 395-398  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos A1996UN20700083 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.504 Times cited 2 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15817 Serial 1705  
Permanent link to this record
 

 
Author Helm, M.; Hilber, W.; Fromherz, T.; Peeters, F.M.; Alavi, K.; Pathak, R.N. doi  openurl
  Title Mini-band dispersion, critical points, and impurity bands in superlattices: an infrared absorption study Type A1 Journal article
  Year 1994 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 37 Issue Pages 1277-1280  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos A1994NE79600171 Publication Date 2002-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.504 Times cited 2 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:9372 Serial 2082  
Permanent link to this record
 

 
Author Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. pdf  doi
openurl 
  Title Modeling the impact of junction angles in tunnel field-effect transistors Type A1 Journal article
  Year 2012 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 69 Issue Pages 31-37  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000301561600009 Publication Date 2012-01-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.58 Times cited 9 Open Access  
  Notes ; We acknowledge the input on nanowire processing of Rita Rooyackers and useful discussions with Wim Magnus. William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was also supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 1.58; 2012 IF: 1.482  
  Call Number UA @ lucian @ c:irua:97816 Serial 2145  
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Author Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. pdf  doi
openurl 
  Title Phonon-assisted Zener tunneling in a p-n diode silicon nanowire Type A1 Journal article
  Year 2013 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 79 Issue Pages 196-200  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The Zener tunneling current flowing through a biased, abrupt p-n junction embedded in a cylindrical silicon nanowire is calculated. As the band gap becomes indirect for sufficiently thick wires, Zener tunneling and its related transitions between the valence and conduction bands are mediated by short-wavelength phonons interacting with mobile electrons. Therefore, not only the high electric field governing the electrons in the space-charge region but also the transverse acoustic (TA) and transverse optical (TO) phonons have to be incorporated in the expression for the tunneling current. The latter is also affected by carrier confinement in the radial direction and therefore we have solved the Schrodinger and Poisson equations self-consistently within the effective mass approximation for both conduction and valence band electrons. We predict that the tunneling current exhibits a pronounced dependence on the wire radius, particularly in the high-bias regime. (C) 2012 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000313611000037 Publication Date 2012-09-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.58 Times cited 2 Open Access  
  Notes ; This work is supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. One of the authors (W. Vandenberghe) gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). ; Approved Most recent IF: 1.58; 2013 IF: 1.514  
  Call Number UA @ lucian @ c:irua:110104 Serial 2600  
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Author Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. pdf  doi
openurl 
  Title Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations Type A1 Journal article
  Year 2012 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 71 Issue Pages 30-36  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000303033800007 Publication Date 2011-12-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.58 Times cited 2 Open Access  
  Notes ; ; Approved Most recent IF: 1.58; 2012 IF: 1.482  
  Call Number UA @ lucian @ c:irua:98245 Serial 2786  
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Author Balaban, S.N.; Pokatilov, E.P.; Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; van Rossum, M.; Sorée, B. doi  openurl
  Title Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET Type A1 Journal article
  Year 2002 Publication Solid-State Electronics Abbreviated Journal (up) Solid State Electron  
  Volume 46 Issue Pages 435-444  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000174445000020 Publication Date 2002-10-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.58 Times cited 16 Open Access  
  Notes Approved Most recent IF: 1.58; 2002 IF: 0.913  
  Call Number UA @ lucian @ c:irua:40880 Serial 2791  
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Author Peeters, F.M.; Shi, J.M.; Devreese, J.T.; Cheng, J.-P.; McCombe, B.D.; Schaff, W. doi  openurl
  Title Resonant magneto-polarons in strongly-coupled superlattices Type A1 Journal article
  Year 1994 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 37 Issue Pages 1217-1220  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos A1994NE79600157 Publication Date 2002-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.504 Times cited 5 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:9275 Serial 2886  
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Author Bogaerts, R.; de Keyser, A.; Herlach, F.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Brehmer, D.; Allen, S.J. doi  openurl
  Title Size effects in the transport properties of thin Sc1-xErxAs epitaxial layers buried in GaAs Type A1 Journal article
  Year 1994 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 37 Issue Pages 789-792  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos A1994NE79600063 Publication Date 2002-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.504 Times cited 4 Open Access  
  Notes Approved CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #  
  Call Number UA @ lucian @ c:irua:9375 Serial 3037  
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Author Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. pdf  doi
openurl 
  Title Image-force barrier lowering in top- and side-contacted two-dimensional materials Type A1 Journal article
  Year 2022 Publication Solid state electronics Abbreviated Journal (up) Solid State Electron  
  Volume 198 Issue Pages 108458-4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We compare the image-force barrier lowering (IFBL) and calculate the resulting contact resistance for four different metal-dielectric-two-dimensional (2D) material configurations. We analyze edge contacts in three different geometries (a homogeneous dielectric throughout, including the 2D layer; a homogeneous dielectric surrounding the 2D layer, both ungated and back gated) and also a top-contact assuming a homogeneous dielectric. The image potential energy of each configuration is determined and added to the Schottky energy barrier which is calculated assuming a textbook Schottky potential. For each configuration, the contact resistivity is calculated using the WKB approximation and the effective mass approximation using either SiO2 or HfO2 as the surrounding dielectric. We obtain the lowest contact resistance of 1 k Omega mu m by n-type doping an edge contacted transition metal-dichalcogenide (TMD) monolayer, sandwiched between SiO2 dielectric, with similar to 1012 cm-2 donor atoms. When this optimal configuration is used, the contact resistance is lowered by a factor of 50 compared to the situation when the IFBL is not considered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000876289800003 Publication Date 2022-09-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.7 Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.7  
  Call Number UA @ admin @ c:irua:191556 Serial 7312  
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Author Solís, C.; Rossell, M.D.; Garcia, G.; Figueras, A.; Van Tendeloo, G.; Santiso, J. pdf  doi
openurl 
  Title Microstructure and high temperature transport properties of high quality epitaxial SrFeO3-\delta films Type A1 Journal article
  Year 2008 Publication Solid state ionics Abbreviated Journal (up) Solid State Ionics  
  Volume 179 Issue 35/36 Pages 1996-1999  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report the high temperature electronic transport properties of SrFeO3 − ä epitaxial thin films obtained by pulsed laser deposition on NdGaO3(110) substrates. The films show total conductivity higher than the bulk material and apparent activation energy of about 0.12 eV in O2, lower than reported values for SrFeO3 − ä films. The conductivity dependence with oxygen partial pressure shows a power dependence with an exponent close to + 1/4, in agreement with expected point defect equilibrium. For a given oxygen partial pressure, the temperature coefficient of resistance (TCR) shows a low positive value of about 1.52.5 10− 3 K− 1, which is still suitable for resistive oxygen sensing applications. The transport properties of the films are discussed in view of their particular microstructure.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000261904800007 Publication Date 2008-07-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-2738; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.354 Times cited 10 Open Access  
  Notes Iap V-1 Approved Most recent IF: 2.354; 2008 IF: 2.425  
  Call Number UA @ lucian @ c:irua:75907 Serial 2053  
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Author Lomakov, M.V.; Istomin, S.Y.; Abakumov, A.M.; Van Tendeloo, G.; Antipov, E.V. doi  openurl
  Title Synthesis and characterization of oxygen-deficient oxides BaCo1-xYxO3-y' x = 0.15, 0.25 and 0.33, with the perovskite structure Type A1 Journal article
  Year 2008 Publication Solid state ionics Abbreviated Journal (up) Solid State Ionics  
  Volume 179 Issue 33/34 Pages 1885-1889  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Oxygen-deficient complex cobalt oxides BaCo1 − xYxO3 − y, = 0.15, 0.25 and 0.33, with a cubic perovskite structure have been synthesized in air at 1100 °C using a citrate route. Cation composition of the compounds was confirmed by energy-dispersed X-ray (EDX) microanalysis while oxygen content was determined by iodometric titration. An electron diffraction (ED) study of the x = 0.25 and 0.33 compositions show the presence of a diffuse intensity, indicating possible short-range ordering of the B cations. It was found that the treatment of BaCo0.75Y0.25O2.55 in a humid atmosphere leads to the absorption of water vapour at the first stage. Oxygen permeation studies of the ceramic membranes of BaCo0.75Y0.25O2.55 and BaCo0.67Y0.33O2.55 with variable thickness showed high oxygen fluxes of 0.170.32 µmol/cm2/s at 950 °C.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000261870800009 Publication Date 2008-06-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-2738; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.354 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.354; 2008 IF: 2.425  
  Call Number UA @ lucian @ c:irua:75905 Serial 3415  
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Author Pardo, J.A.; Santiso, J.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D. doi  openurl
  Title Thickness-dependent transport properties of Sr4Fe6O13 epitaxial thin films Type A1 Journal article
  Year 2006 Publication Solid state ionics Abbreviated Journal (up) Solid State Ionics  
  Volume 177 Issue 5/6 Pages 423-428  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000236301000001 Publication Date 2006-01-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-2738 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.354 Times cited Open Access  
  Notes Approved Most recent IF: 2.354; 2006 IF: 2.190  
  Call Number UA @ lucian @ c:irua:58049 Serial 4512  
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Author Horvath, Z.E.; Biro, L.P.; Van Tendeloo, G.; Tondeur, C.; Bister, G.; Pierard, N.; Fonseca, A.; Nagy, J.B. openurl 
  Title Optimization of the amount of catalyst and reaction time in single wall nanotube production Type A1 Journal article
  Year 2003 Publication Diffusion and defect data : solid state data : part B : solid state phenomena Abbreviated Journal (up) Solid State Phenom  
  Volume 94 Issue Pages 271-274  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The influence of the amount of catalyst and the reaction time on the quantity and quality of catalytically grown single wall carbon nanotubes (SWNT) was investigated. The aim was to optimize some of the SWNT growth parameters using TEM and HRTEM. The thickness of catalyst layer influences the synthesis of the nanotube because the gas composition can differ between top and bottom. Microscopic investigation of the grown SWNT samples showed that the thicker the catalyst layer the lower relative nanotube content, so the deeper parts of the catalyst layer are less effective: The optimum time for the reaction was found to be 10 minutes. This may be understood assuming that nanotube growth needs an initial incubation time while the activity of the catalyst decreases steadily until the nariotube growth stops.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vaduz Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1012-0394; 1662-9779 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94860 Serial 2490  
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Author Abakumov, A.M.; Kalyuzhnaya, A.S.; Rozova, M.G.; Antipov, E.V.; Hadermann, J.; Van Tendeloo, G. pdf  doi
openurl 
  Title Compositionally induced phase transition in the Ca2MnGa1-xAlxO5 solid solutions: ordering of tetrahedral chains in brownmillerite structure Type A1 Journal article
  Year 2005 Publication Solid state sciences Abbreviated Journal (up) Solid State Sci  
  Volume 7 Issue 7 Pages 801-811  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000230259500001 Publication Date 2005-04-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1293-2558; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.811 Times cited 38 Open Access  
  Notes IAP V-1; RFBR 04-03-32785-a. Approved Most recent IF: 1.811; 2005 IF: 1.708  
  Call Number UA @ lucian @ c:irua:54700 Serial 448  
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Author Lazoryak, B.I.; Morozov, V.A.; Belik, A.A.; Stefanovich, S.Y.; Grebenev, V.V.; Leonidov, I.A.; Mitberg, E.B.; Davydov, S.A.; Lebedev, O.I.; Van Tendeloo, G. pdf  doi
openurl 
  Title Ferroelectric phase transition in the whitlockite-type Ca9Fe(PO4)7; crystal structure of the paraelectric phase at 923 K Type A1 Journal article
  Year 2004 Publication Solid state sciences Abbreviated Journal (up) Solid State Sci  
  Volume 6 Issue 2 Pages 185-195  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000220312700005 Publication Date 2004-02-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1293-2558; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.811 Times cited 41 Open Access  
  Notes Approved Most recent IF: 1.811; 2004 IF: 1.598  
  Call Number UA @ lucian @ c:irua:54699 Serial 1180  
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