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“Uniform strain in heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Van de Put ML, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G, IEEE electron device letters 37, 337 (2016). http://doi.org/10.1109/LED.2016.2519681
Abstract: Strain can strongly impact the performance of III-V tunnel field-effect transistors (TFETs). However, previous studies on homostructure TFETs have found an increase in ON-current to be accompanied with a degradation of subthreshold swing. We perform 30-band quantum mechanical simulations of staggered heterostructure p-n-i-n TFETs submitted to uniaxial and biaxial uniform stress and find the origin of the subthreshold degradation to be a reduction of the density of states in the strained case. We apply an alternative configuration including a lowly doped pocket in the source, which allows to take full benefit of the strain-induced increase in ON-current.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
Times cited: 17
DOI: 10.1109/LED.2016.2519681
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“Modeling of edge scattering in graphene interconnects”. Contino A, Ciofi I, Wu X, Asselberghs I, Celano U, Wilson CJ, Tokei Z, Groeseneken G, Sorée B, IEEE electron device letters 39, 1085 (2018). http://doi.org/10.1109/LED.2018.2833633
Abstract: Graphene interconnects are being considered as a promising candidate for beyond CMOS applications, thanks to the intrinsic higher carrier mobility, lower aspect ratio and better reliability with respect to conventional Cu damascene interconnects. However, similarly to Cu, line edge roughness can seriously affect graphene resistance, something which must be taken into account when evaluating the related performance benefits. In this letter, we present a model for assessing the impact of edge scattering on the resistance of graphene interconnects. Our model allows the evaluation of the total mean free path in graphene lines as a function of graphene width, diffusive scattering probability and edge roughness standard deviation and autocorrelation length. We compare our model with other models from literature by benchmarking them using the same set of experimental data. We show that, as opposed to the considered models from literature, our model is capable to describe the mobility drop with scaling caused by significantly rough edges.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
Times cited: 1
DOI: 10.1109/LED.2018.2833633
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“Large variation in temperature dependence of band-to-band tunneling current in tunnel devices”. Bizindavyi J, Verhulst AS, Verreck D, Sorée B, Groeseneken G, IEEE electron device letters 40, 1864 (2019). http://doi.org/10.1109/LED.2019.2939668
Abstract: The observation of a significant temperature-dependent variation in the ${I}$ – ${V}$ characteristics of tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated current. In this letter, we use a ballistic 2D quantum-mechanical simulator, calibrated using the measured temperature-dependent ${I}$ – ${V}$ characteristics of Esaki diodes, to demonstrate that the temperature dependence of band-to-band tunneling (BTBT) current can vary significantly in both Esaki diodes and tunnel FETs. The variation of BTBT current with temperature is impacted by doping concentration, gate voltage, possible presence of a highly-doped pocket at the tunnel junction, and material.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
DOI: 10.1109/LED.2019.2939668
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“Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes”. Bizindavyi J, Verhulst AS, Smets Q, Verreck D, Sorée B, Groeseneken G, IEEE journal of the Electron Devices Society 6, 633 (2018). http://doi.org/10.1109/JEDS.2018.2834825
Abstract: Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating a semi-classical model for high-doping-induced ballistic band-tails tunneling currents at multiple temperatures with two In0.53Ga0.47As Esaki diodes using their SIMS doping profiles, C-V characteristics and their forward-bias current density in the negative differential resistance (NDR) regime. The current swing in the NDR regime is shown not to be linked to the band-tails Urbach energy. We further demonstrate theoretically that the calibrated band-tails contribution is also the dominant band-tails contribution to the subthreshold swing of the corresponding TFETs. Lastly, we verify that the presented procedure is applicable to all direct-bandgap semiconductors by successfully applying it to InAs Esaki diodes in literature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.141
Times cited: 5
DOI: 10.1109/JEDS.2018.2834825
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“Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells”. Brammertz G, Oueslati S, Buffiere M, Bekaert J, El Anzeery H, Messaoud KB, Sahayaraj S, Nuytten T, Koble C, Meuris M, Poortmans J;, IEEE journal of photovoltaics 5, 649 (2015). http://doi.org/10.1109/JPHOTOV.2014.2376053
Abstract: We have investigated different nonidealities in Cu2ZnSnSe4CdSZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorberbuffer heterojunction leading to a strong crossover behavior between dark and illuminated currentvoltage curves. In addition, a barrier of about 130 meV is present at the Moabsorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 3.712
Times cited: 13
DOI: 10.1109/JPHOTOV.2014.2376053
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“P-N Junction Passivation in Kesterite Solar Cells by Use of Solution-Processed TiO2 Layer”. Ranjbar S, Hadipour A, Vermang B, Batuk M, Hadermann J, Garud S, Sahayaraj S, Meuris M, Brammertz G, da Cunha AF, Poortmans J, IEEE journal of photovoltaics 7, 1130 (2017). http://doi.org/10.1109/JPHOTOV.2017.2692208
Abstract: In this work, we used a solution-processed TiO2 layer between Cu2ZnSnSe4 and CdS buffer layer to reduce the recombination at the p–n junction. Introducing the TiO2 layer showed a positive impact on VOC but fill factor and efficiency decreased. Using a KCN treatment, we could create openings in the TiO2 layer, as confirmed by transmission electron microscopy measurements. Formation of these openings in the TiO2 layer led to the improvement of the short-circuit current, fill factor, and the efficiency of the modified solar cells.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.712
Times cited: 2
DOI: 10.1109/JPHOTOV.2017.2692208
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“Anisotropic etching of CVD grown graphene for ammonia sensing”. Yagmurcukardes N, Bayram A, Aydin H, Yagmurcukardes M, Acikbas Y, Peeters FM, Celebi C, IEEE sensors journal 22, 3888 (2022). http://doi.org/10.1109/JSEN.2022.3146220
Abstract: Bare chemical vapor deposition (CVD) grown graphene (GRP) was anisotropically etched with various etching parameters. The morphological and structural characterizations were carried out by optical microscopy and the vibrational properties substrates were obtained by Raman spectroscopy. The ammonia adsorption and desorption behavior of graphene-based sensors were recorded via quartz crystal microbalance (QCM) measurements at room temperature. The etched samples for ambient NH3 exhibited nearly 35% improvement and showed high resistance to humidity molecules when compared to bare graphene. Besides exhibiting promising sensitivity to NH3 molecules, the etched graphene-based sensors were less affected by humidity. The experimental results were collaborated by Density Functional Theory (DFT) calculations and it was shown that while water molecules fragmented into H and O, NH3 interacts weakly with EGPR2 sample which reveals the enhanced sensing ability of EGPR2. Apparently, it would be more suitable to use EGRP2 in sensing applications due to its sensitivity to NH3 molecules, its stability, and its resistance to H2O molecules in humid ambient.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.3
Times cited: 4
DOI: 10.1109/JSEN.2022.3146220
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“Transmission electron microscopy on interface engineered superconducting thin films”. Bals S, Van Tendeloo G, Rijnders G, Huijben M, Leca V, Blank DHA, IEEE transactions on applied superconductivity 13, 2834 (2003). http://doi.org/10.1109/TASC.2003.812023
Abstract: Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2Ox buffer layer can avoid a variable interface configuration in YBa2Cu3O7-delta thin films grown on SrTiO3. The growth can also be controlled at an atomic level by, using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0.85La0.15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1109/TASC.2003.812023
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“Direct and indirect band-to-band tunneling in germanium-based TFETs”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, De Meyer K, IEEE transactions on electron devices 59, 292 (2012). http://doi.org/10.1109/TED.2011.2175228
Abstract: Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered. However, direct band-to-band tunneling (BTBT) in Ge should be included in tunnel FET modeling and simulations since the energy difference between the Ge conduction band edges at the L and G valleys is only 0.14 eV at room temperature. In this paper, we theoretically calculate the parameters A and B of Kane's direct and indirect BTBT models at different tunneling directions ([100], [110], and [111]) for Si, Ge and unstrained Si1-xGex. We highlight how the direct BTBT component becomes more important as the Ge mole fraction increases. The calculation of the band-to-band generation rate in the uniform electric field limit reveals that direct tunneling always dominates over indirect tunneling in Ge. The impact of the direct transition in Ge on the performance of two realistic tunnel field-effect transistor configurations is illustrated with TCAD simulations. The influence of field-induced quantum confinement is included in the analysis based on a back-of-the-envelope calculation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.605
Times cited: 212
DOI: 10.1109/TED.2011.2175228
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“Optimization of gate-on-source-only tunnel FETs with counter-doped pockets”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Magnus W, Leonelli D, Groeseneken G, De Meyer K, IEEE transactions on electron devices 59, 2070 (2012). http://doi.org/10.1109/TED.2012.2200489
Abstract: We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current than the lateral tunneling configuration with a gate on the channel. Our analysis is performed based on a recently developed 2-D quantum-mechanical simulator calculating band-to-band tunneling and including quantum confinement (QC). It is shown that the two disadvantages of the structure, namely, the sensitivity to gate alignment and the physical oxide thickness, are mitigated by placing a counter-doped parallel pocket underneath the gate-source overlap. The pocket also significantly reduces the field-induced QC. The findings are illustrated with all-Si and all-Ge gate-on-source-only tunnel field-effect transistor simulations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.605
Times cited: 72
DOI: 10.1109/TED.2012.2200489
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“Signature of ballistic band-tail tunneling current in tunnel FET”. Bizindavyi J, Verhulst AS, Sorée B, Groeseneken G, Ieee Transactions On Electron Devices 67, 3486 (2020). http://doi.org/10.1109/TED.2020.3004119
Abstract: To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in agreement with the reported experimental results. We explain how the temperature dependence of the output characteristics can be used to distinguish between a current dominated by BTT and a current dominated by trap-assisted tunneling. Finally, we propose an expression that relates the energetic extension of the quasi-extended BT states in the bandgap to the onset voltage for tunneling.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.1
DOI: 10.1109/TED.2020.3004119
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“High-resolution electron microscopy : from imaging toward measuring”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D, IEEE transactions on instrumentation and measurement 51, 611 (2002). http://doi.org/10.1109/TIM.2002.802250
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.456
Times cited: 13
DOI: 10.1109/TIM.2002.802250
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“High-resolution X-ray fluorescence microtomography of homogeneous samples”. Simionovici AS, Chukalina M, Schroer C, Drakopoulos M, Snigirev A, Snigireva I, Lengeler B, Janssens K, Adams F, IEEE transactions on nuclear science 47, 2736 (2000). http://doi.org/10.1109/23.901180
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 1.171
DOI: 10.1109/23.901180
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“Detailed numerical investigation of a DC sputter magnetron”. Kolev I, Bogaerts A, IEEE transactions on plasma science 34, 886 (2006). http://doi.org/10.1109/TPS.2006.875843
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 28
DOI: 10.1109/TPS.2006.875843
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“Evolution of charged particle densities after laser-induced photodetachment in a strongly electronegative RF discharge”. Yan M, Bogaerts A, Gijbels R, IEEE transactions on plasma science 30, 132 (2002). http://doi.org/10.1109/TPS.2002.1003959
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
DOI: 10.1109/TPS.2002.1003959
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“Investigation of growth mechanisms of clusters in a silane discharge with the use of a fluid model”. de Bleecker K, Bogaerts A, Goedheer W, Gijbels R, IEEE transactions on plasma science 32, 691 (2004). http://doi.org/10.1109/TPS.2004.826095
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 29
DOI: 10.1109/TPS.2004.826095
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“Magnetic field dependence of the normal mode spectrum of a planar complex plasma cluster”. Kong M, Ferreira WP, Partoens B, Peeters FM, IEEE transactions on plasma science 32, 569 (2004). http://doi.org/10.1109/TPS.2004.826084
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.052
Times cited: 4
DOI: 10.1109/TPS.2004.826084
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“Monte Carlo model for the argon ions and fast argon atoms in a radio-frequency discharge”. Bogaerts A, Gijbels R, IEEE transactions on plasma science 27, 1406 (1999). http://doi.org/10.1109/27.799819
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 15
DOI: 10.1109/27.799819
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“A one-dimensional fluid model for an acetylene rf discharge: a study of the plasma chemistry”. Herrebout D, Bogaerts A, Gijbels R, Goedheer WJ, Vanhulsel A, IEEE transactions on plasma science 31, 659 (2003). http://doi.org/10.1109/TPS.2003.815249
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 26
DOI: 10.1109/TPS.2003.815249
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“Semianalytical description of nonlocal secondary electrons in a radio-frequency capacitively coupled plasma at intermediate pressures”. Berezhnoi S, Kaganovich I, Misina M, Bogaerts A, Gijbels R, IEEE transactions plasma science 27, 1339 (1999). http://doi.org/10.1109/27.799810
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 7
DOI: 10.1109/27.799810
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“Low-Temperature Plasma for Biology, Hygiene, and Medicine: Perspective and Roadmap”. Laroussi M, Bekeschus S, Keidar M, Bogaerts A, Fridman A, Lu X, Ostrikov K, Hori M, Stapelmann K, Miller V, Reuter S, Laux C, Mesbah A, Walsh J, Jiang C, Thagard SM, Tanaka H, Liu D, Yan D, Yusupov M, IEEE transactions on radiation and plasma medical sciences 6, 127 (2022). http://doi.org/10.1109/TRPMS.2021.3135118
Abstract: Plasma, the fourth and most pervasive state of matter in the visible universe, is a fascinating medium that is connected to the beginning of our universe itself. Man-made plasmas are at the core of many technological advances that include the fabrication of semiconductor devices, which enabled the modern computer and communication revolutions. The introduction of low temperature, atmospheric pressure plasmas to the biomedical field has ushered a new revolution in the healthcare arena that promises to introduce plasma-based therapies to combat some thorny and long-standing medical challenges. This article presents an overview of where research is at today and discusses innovative concepts and approaches to overcome present challenges and take the field to the next level. It is written by a team of experts who took an in-depth look at the various applications of plasma in hygiene, decontamination, and medicine, made critical analysis, and proposed ideas and concepts that should help the research community focus their efforts on clear and practical steps necessary to keep the field advancing for decades to come.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1109/TRPMS.2021.3135118
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“Martensitic and related transformations in Ni-Al alloys”. Schryvers D, Journal de physique: 4
T2 –, IIIrd European Symposium on Martensitic Transformations (ESOMAT 94), SEP 14-16, 1994, BARCELONA, SPAIN 5, 225 (1995). http://doi.org/10.1051/jp4:1995235
Abstract: The present paper gives a review of results of recent studies investigating the fundamentals of the martensitic and related phase transformations in Ni-Al. For the former case, the emphasis will be on the microstructure of martensite plates. The latter include the metastable Ni2Al omega-like and stable Ni5Al3 bainitic phases. These phases will be discussed in view of their atomic structure, nucleation, growth and effect on the martensitic transformation. A separate chapter will deal with precursor effects.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 21
DOI: 10.1051/jp4:1995235
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“Nucleation and growth of the Ni5Al3 phase in Ni-Al austenite and martensite”. Schryvers D, Toth L, Ma Y, Tanner L, Journal de physique: 4
T2 –, IIIrd European Symposium on Martensitic Transformations (ESOMAT 94), SEP 14-16, 1994, BARCELONA, SPAIN 5, 299 (1995). http://doi.org/10.1051/jp4:1995246
Abstract: The nucleation and growth mechanisms of Ni5Al3 precipitates and microtwinned plates in B2 austenite and 2M (3R) martensite phases are described on the basis of conventional and high resolution electron microscopy. In the Ni62.5Al37.5 B2 austenite matrix short annealings at 550 degrees C introduce three-pointed star shaped precipitates consisting of twin related parts of different variants of the Ni5Al3 structure. Longer annealings result in plates growing separately from these wings and developing microtwinning in order to accommodate stress built-up at the interfaces with the surrounding matrix. Annealing of Ni65Al35 2M martensite plates induces simple reordering into the Ni5Al3 phase, increasing the fct c/a ratio by about 1%. As a result stracking faults are introduced in the smallest twin variants.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 3
DOI: 10.1051/jp4:1995246
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“Allogeneic stromal cell implantation in brain tissue leads to robust microglial activation”. Tambuyzer BR, Bergwerf I, de Vocht N, Reekmans K, Daans J, Jorens PG, Goossens H, Ysebaert DK, Chatterjee S, Van Marck E, Berneman ZN, Ponsaerts P, Immunology and cell biology (2009). http://doi.org/10.1038/ICB.2009.12
Abstract: Although adult and embryonic stem cell-based therapy for central nervous system (CNS) injury is being developed worldwide, less attention is given to the immunological aspects of allogeneic cell implantation in the CNS. The latter is of major importance because, from a practical point of view, future stem cell-based therapy for CNS injury will likely be performed using well-characterised allogeneic stem cell populations. In this study, we aimed to further describe the immunological mechanism leading to rejection of allogeneic bone marrow-derived stromal cells (BM-SC) after implantation in murine CNS. For this, we first investigated the impact of autologous and allogeneic BM-SC on microglia activation in vitro. Although the results indicate that both autologous and allogeneic BM-SC do not activate microglia themselves in vitro, they also do not inhibit activation of microglia after exogenous stimuli in vitro. Next, we investigated the impact of allogeneic BM-SC on microglia activation in vivo. In contrast to the in vitro observations, microglia become highly activated in vivo after implantation of allogeneic BM-SC in the CNS of immune-competent mice. Moreover, our results suggest that microglia, rather than T-cells, are the major contributors to allograft rejection in the CNS.
Keywords: A1 Journal article; Antwerp Surgical Training, Anatomy and Research Centre (ASTARC); Laboratory Experimental Medicine and Pediatrics (LEMP); Bio-Imaging lab; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.557
Times cited: 31
DOI: 10.1038/ICB.2009.12
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“Deactivation study of Fe2O3-CeO2 during redox cycles for CO production from CO2”. Dharanipragada NVRA, Meledina M, Galvita VV, Poelman H, Turner S, Van Tendeloo G, Detavernier C, Marin GB, Industrial and engineering chemistry research 55, 5911 (2016). http://doi.org/10.1021/acs.iecr.6b00963
Abstract: Deactivation was investigated in Fe2O3-CeO2 oxygen storage materials during repeated H-2-reduction and CO2-reoxidation. In situ XRD, XAS, and TEM were used to identify phases, crystallite sizes, and morphological changes upon cycling operation. The effect of redox cycling was investigated both in Fe-rich (80 wt % Fe2O3-CeO2) and Ce-rich (10 wt %Fe2O3-CeO2) materials. The former consisted of 100 nm Fe2O3 particles decorated with 5-10 nm Ce1-xFexO2-x. The latter presented CeO2 with incorporated Fe, i.e. a solid solution of Ce1-xFexO2-x, as the main oxygen carrier. By modeling the EXAFS Ce-K signal for as-prepared 10 wt %Fe2O3-CeO2, the amount of Fe in CeO2 was determined as 21 mol %, corresponding to 86% of the total iron content. Sintering and solid solid transformations, the latter including both new phase formation and element segregation, were identified as deactivation pathways upon redox cycling. In Ce-rich material, perovskite (CeFeO3) was identified by XRD. This phase remained inert during reduction and reoxidation, resulting in an overall lower oxygen storage capacity. Further, Fe segregated from the solid solution, thereby decreasing its reducibility. In addition, an increase in crystallite size occurred for all phases. In Fe-rich material, sintering is the main deactivation pathway, although Fe segregation from the solid solution and perovskite formation cannot be excluded.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 26
DOI: 10.1021/acs.iecr.6b00963
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“A new generalized empirical correlation for predicting methane hydrate equilibrium conditions in pure water”. Kummamuru NB, Perreault P, Lenaerts S, Industrial &, Engineering Chemistry Research 60, 3474 (2021). http://doi.org/10.1021/ACS.IECR.0C05833
Abstract: This work contributes to a new generalized empirical correlation for predicting methane (CH4) hydrate equilibrium conditions in pure water. Unlike the conventional thermodynamic approach that involves complex reckoning, the proposed empirical equation is developed by regressing 215 experimental data points from the literature and validating with 45 data points for predicting methane hydrate equilibrium conditions in pure water. The new correlation is proposed for a temperature and pressure range of 273.2–303.48 K and 2.63–72.26 MPa, respectively. The accuracy and performance of the proposed correlation is quantitatively evaluated using statistical error analysis. The proposed correlation was able to estimate CH4 hydrate equilibrium conditions satisfactorily with an R2 of 0.99987. The overall error analysis for the proposed correlation shows fair agreement with the experimental data reported within the literature. Concurrently, the new correlation showed better performance in predicting equilibrium conditions compared to those calculated by other empirical correlations available in the literature within the investigated range. In addition, the proposed empirical equation is also checked to evaluate its efficacy in fitting each set of experimental binary/ternary methane hydrates (BTMH) and binary hydrogen hydrates (BHH) for an accurate representation of equilibrium data over a wide range of composition, pressure, and temperature conditions. A maximum percentage deviation of 0.58% and 0.24% was observed between experimental and calculated equilibrium conditions for BTMH and BHH, respectively.
Keywords: A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
Impact Factor: 2.843
DOI: 10.1021/ACS.IECR.0C05833
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“Validation of a newly developed FTIR in situ reactor: real time study of photocatalytic degradation of nitric oxide”. Hauchecorne B, Tytgat T, Terrens D, Vanpachtenbeke F, Lenaerts S, Infrared physics and technology 53, 469 (2010). http://doi.org/10.1016/J.INFRARED.2010.09.008
Abstract: For many years, photocatalysis has been proposed as one of the promising techniques to abate environmental pollutants. To improve these reactions it is vital to know the reaction mechanisms of the photocatalytic degradation. This new reactor will make it possible to study the catalytic surface at the moment the reactions occur. By the means of UV LED illumination there is no need of an external UV lamp and thus lowers the cost. The validation of this newly developed reactor is done by investigating the photocatalytic reaction mechanism of nitric oxide (NO) and comparing these findings with those already discussed in literature. From these results, it became clear that the newly developed FTIR in situ reactor allows real time study of photocatalytic degradations.
Keywords: A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL)
Impact Factor: 1.713
Times cited: 12
DOI: 10.1016/J.INFRARED.2010.09.008
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“A case series on lung deposition analysis of inhaled medication using functional imaging based computational fluid dynamics in asthmatic patients : effect of upper airway morphology and comparison with in vivo data”. Vinchurkar S, De Backer L, Vos W, Van Holsbeke C, de Backer J, de Backer W, Inhalation Toxicology 24, 81 (2012). http://doi.org/10.3109/08958378.2011.644351
Abstract: Context: Asthma affects 20 million Americans resulting in an economic burden of approximately $18 billion in the US alone (Allergies and Asthma Foundation 2000; National Center for Environmental Health (NCEH) 1999). Research studies based on differences in patient-specific airway morphology for asthma and the associated effect on deposition of inhaled aerosols are currently not available in the literature. Therefore, the role of morphological variations such as upper airway (extrathoracic) occlusion is not well documented. Objective: Functional imaging based computational fluid dynamics (CFD) of the respiratory airways for five asthmatic subjects is performed in this study using computed tomography (CT) based patient-specific airway models and boundary conditions. Methods: CT scans for 5 asthma patients were used to reconstruct 3D lung models using segmentation software. An averaged inhalation profile and patient-specific lobar flow distribution were used to perform the simulation. The simulations were used to obtain deposition for BDP/Formoterol (R) HFA pMDI in the patient-specific airway models. Results: The lung deposition obtained using CFD was in excellent agreement with available in vivo data using the same product. Specifically, CFD resulted in 30% lung deposition, whereas in vivo lung deposition was reported to be approximately 31%. Conclusion: It was concluded that a combination of patient-specific airway models and lobar boundary conditions can be used to obtain accurate lung deposition estimates. Lower lung deposition can be expected for patients with higher extrathoracic resistance. Novel respiratory drug delivery devices need to accommodate population subgroups based on these morphological and anatomical differences in addition to subject age.
Keywords: A1 Journal article; Pharmacology. Therapy; Biophysics and Biomedical Physics; Condensed Matter Theory (CMT); Laboratory Experimental Medicine and Pediatrics (LEMP)
Impact Factor: 1.751
Times cited: 36
DOI: 10.3109/08958378.2011.644351
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“Anion ordering and defect structure in Ruddlesden-Popper strontium niobium oxynitrides”. Tobías G, Beltrán-Porter D, Lebedev OI, Van Tendeloo G, Rodríguez-Carvajal J, Fuertes A, Inorganic chemistry 43, 8010 (2004). http://doi.org/10.1021/ic049236k
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.857
Times cited: 31
DOI: 10.1021/ic049236k
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“Atomic structure of defects in anion-deficient perovskite-based ferrites with a crystallographic shear structure”. Batuk M, Turner S, Abakumov AM, Batuk D, Hadermann J, Van Tendeloo G, Inorganic chemistry 53, 2171 (2014). http://doi.org/10.1021/ic4028404
Abstract: Crystallographic shear (CS) planes provide a new structure-generation mechanism in the anion-deficient perovskites containing lone-pair cations. Pb2Sr2Bi2Fe6O16, a new n = 6 representative of the AnBnO3n2 homologous series of the perovskite-based ferrites with the CS structure, has been synthesized using the solid-state technique. The structure is built of perovskite blocks with a thickness of four FeO6 octahedra spaced by double columns of FeO5 edge-sharing distorted tetragonal pyramids, forming 1/2[110](101)p CS planes (space group Pnma, a = 5.6690(2) Å, b = 3.9108(1) Å, c = 32.643(1) Å). Pb2Sr2Bi2Fe6O16 features a wealth of microstructural phenomena caused by the flexibility of the CS planes due to the variable ratio and length of the constituting fragments with {101}p and {001}p orientation. This leads to the formation of waves, hairpins, Γ-shaped defects, and inclusions of the hitherto unknown layered anion-deficient perovskites Bi2(Sr,Pb)Fe3O8.5 and Bi3(Sr,Pb)Fe4O11.5. Using a combination of diffraction, imaging, and spectroscopic transmission electron microscopy techniques this complex microstructure was fully characterized, including direct determination of positions, chemical composition, and coordination number of individual atomic species. The complex defect structure makes these perovskites particularly similar to the CS structures in ReO3-type oxides. The flexibility of the CS planes appears to be a specific feature of the Sr-based system, related to the geometric match between the SrO perovskite layers and the {100}p segments of the CS planes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.857
Times cited: 6
DOI: 10.1021/ic4028404
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