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“Guidelines for passive control of traffic-related air pollution in street canyons : an overview for urban planning”. Voordeckers D, Lauriks T, Denys S, Billen P, Tytgat T, Van Acker M, Landscape And Urban Planning 207, 103980 (2021). http://doi.org/10.1016/J.LANDURBPLAN.2020.103980
Abstract: Recent studies indicate the necessity of addressing traffic-related air pollution in urban environments, as street canyons are known for their lack of natural ventilation and increased pollution levels. To address this issue, numerous studies have been conducted on different aspects (e.g. aspect ratio, orientation and height variation) and their impact on ventilation and pollution dispersion/dilution performance in street canyons. Despite the numerous studies, the information remains fragmented and the results and applications are fairly unknown in urban planning. Broad review studies on numerous street canyon aspects are also quite scarce. In this study, over 200 studies were collected and reviewed across various parameters and on different configuration levels (street canyon configuration / building configuration / in-canyon configuration). Hereby, the study aims to give a comprehensive overview and to formulate spatial guidelines to improve the application of the reviewed studies for the purpose of urban planning. In total, 19 general guidelines were formulated, and an implementation strategy for the purpose of urban planning was developed. Despite the usability of these guidelines for urban planning, a high number of limitations and variabilities were detected. The broad literature review also revealed knowledge gaps, indicating the potentials for further research.
Keywords: A1 Journal article; Economics; Law; Engineering sciences. Technology; Art; Energy and Materials in Infrastructure and Buildings (EMIB); Research Group for Urban Development; Sustainable Energy, Air and Water Technology (DuEL); Intelligence in PRocesses, Advanced Catalysts and Solvents (iPRACS)
Impact Factor: 4.563
DOI: 10.1016/J.LANDURBPLAN.2020.103980
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“Towards Reproducible and Transparent Science of (Big) Electron Microscopy Data Using Version Control”. Nord M, Verbeeck J, Microscopy and microanalysis
T2 –, Microscopy &, Microanalysis 2019, 4-8 August, 2019, Portland, Oregon 25, 232 (2019). http://doi.org/10.1017/S1431927619001892
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
DOI: 10.1017/S1431927619001892
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“Possible (bi) polaron effects in the high-tc superconductors”. Peeters FM, Devreese JT, Verbist G, Physica scripta
T2 –, 11TH General Conf. Of the Condensed Matter Division of the European Physical Society, April 08-11, 1991, Exeter, England T39, 66 (1991). http://doi.org/10.1088/0031-8949/1991/T39/007
Abstract: In the present paper, the theory of the large bipolaron is reviewed and the possibility of bipolaron formation in the high-T(c) superconductors is indicated. Operator and path-integral formulations of the large bipolaron problem are compared. In the strong-coupling limit, the effect of non-optimal upper-bounds to the single-polaron groundstate energy is emphasized. The fact that the interaction with multiple phonon branches enhances the electron-phonon interaction and might result in a larger stability region for bipolaron formation is indicated. Experimental values for the static and high-frequency dielectric constants are used to discuss the relevance of bipolaron formation as a pair-forming mechanism in the high-T(c) superconductors.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.126
Times cited: 29
DOI: 10.1088/0031-8949/1991/T39/007
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“Quantum magnetotransport of a 2-dimensional electron-gas subject to periodic electric or magnetic modulations”. Vasilopoulos, Peeters FM, Physica scripta : supplements
T2 –, 11TH GENERAL CONF OF THE CONDENSED MATTER DIVISION OF THE EUROPEAN, PHYSICAL SOC, APR 08-11, 1991, EXETER, ENGLAND T39, 177 (1991). http://doi.org/10.1088/0031-8949/1991/T39/027
Abstract: Electrical transport properties of the two-dimensional electron gas are studied in the presence of a perpendicular magnetic field B = Bz and of a weak one-dimensional electric (V0 cos (Kx)) or magnetic (B0 = B0 cos (Kx)z) modulation where B0 << B, K = 2-pi/a, and a is the modulation period. In either case the discrete Landau levels broaden into bands whose width: (1) is proportional to the modulation strength, (2) it oscillates with B, and (3) it gives rise to magnetoresistance oscillations, at low B, that are different in period and temperature dependence from the Shubnikov-de Haas (SdH) ones, at higher B. For equal energy modulation strengths, V0 = heB0/m*, the magnetic bandwidth at the Fermi energy is about one order of magnitude larger than the electric one. The same holds for the oscillation amplitude of the electrical magnetoresistivity tensor. For two-dimensional modulations the energy spectrum has the same structure but with different scales. For weak magnetic fields and equal modulation strengths the gaps in the spectrum can be much larger in the magnetic case thus making easier the observability of the spectrum's fine structure.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.126
Times cited: 8
DOI: 10.1088/0031-8949/1991/T39/027
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
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“Ground state of excitons and charged excitons in a quantum well”. Riva C, Peeters FM, Varga K, Physica status solidi: A: applied research
T2 –, 6th International Conference on Optics of Excitons in Confined Systems, (OECS-6), AUG 30-SEP 02, 1999, ASCONA, SWITZERLAND 178, 513 (2000). http://doi.org/10.1002/1521-396X(200003)178:1<513::AID-PSSA513>3.0.CO;2-1
Abstract: A variational calculation of the ground state of a neutral exciton and of positively and negatively charged excitons (trions) in a single quantum well is presented. We study the dependence of the correlation energy and of the binding energy on the well width and on the hole mass. Our results are compared with previous theoretical results and with available experimental data.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 16
DOI: 10.1002/1521-396X(200003)178:1<513::AID-PSSA513>3.0.CO;2-1
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“The study of high Tc-superconducting materials by electron microscopy and electron diffraction”. Amelinckx S, Van Tendeloo G, van Landuyt J, Superconductor science and technology
T2 –, SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND 4, S19 (1991). http://doi.org/10.1088/0953-2048/4/1S/003
Abstract: A survey is given of the application of different electron microscopic techniques to the study of structural features of high T(c)-superconducting materials. Emphasis is laid in this contribution on those structural aspects for the study of which electron microscopy has been essential or has contributed to a significant extent.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 2
DOI: 10.1088/0953-2048/4/1S/003
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“Resonant tunnelling through D- states”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, McDonnell P, Henini M, Sakai JW, Main PC;, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England 362, 247 (1996). http://doi.org/10.1016/0039-6028(96)00395-0
Abstract: We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
DOI: 10.1016/0039-6028(96)00395-0
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“Defects in high-dose oxygen implanted silicon : a TEM study”. Deveirman A, van Landuyt J, Vanhellemont J, Maes HE, Yallup K, Vacuum: the international journal and abstracting service for vacuum science and technology
T2 –, 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND 42, 367 (1991). http://doi.org/10.1016/0042-207X(91)90055-N
Abstract: Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.858
Times cited: 4
DOI: 10.1016/0042-207X(91)90055-N
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