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“Crystal structure of the double Hg-layer copper oxide superconductor (Hg, Pr)2Ba2(Y, Ca)Cu2O8-\delta as a function of doping”. Radaelli PG, Marezio M, Tholence JL, de Brion S, Santoro A, Huang Q, Capponi JJ, Chaillout C, Krekels T, Van Tendeloo G, The journal of physics and chemistry of solids 56, 1471 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.853
Times cited: 16
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“Crystal-structure of the double-hg-layer copper-oxide superconductor (Hg,Pr)2Ba2(Y,Ca)Cu2O8-\deltaas a function of doping”. Radaelli PG, Marezio M, Tholence JL, Debrion S, Santoro A, Huang Q, Capponi JJ, Chaillout C, Krekels T, Van Tendeloo G, The journal of physics and chemistry of solids 56, 1471 (1995). http://doi.org/10.1016/0022-3697(95)00084-4
Abstract: The crystal structure of the newly discovered double-Hg-layer copper oxide superconductor (Hg, Pr)(2)Ba-2(Y, Ca)Cu2O8-delta was studied as a function of chemical doping using neutron and electron diffraction and high-resolution transmission electron microscopy (HREM). Rietveld refinements of the structural parameters from neutron powder diffraction data indicate that the oxygen site O3 on the mercury plane is highly defective, being both partially occupied and displaced from the high-symmetry position. The variable concentration of oxygen vacancies partially compensates for the cation doping and, together with the O3 displacement field, makes some of the Hg atoms acquire an unusual pyramidal coordination. HREM images confirm that the structure is of the '2212' type, with very few defects. In some grains, faint superstructure reflections were evidenced by electron diffraction, suggesting that both the oxygen vacancies and the O3 displacement field may order at least on a local scale.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.853
Times cited: 16
DOI: 10.1016/0022-3697(95)00084-4
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“Crystallographic and magnetic structures of Y0.8Sr2.2Mn2GaO8-\delta: a new vacancy-ordered perovskite structure”. Gillie LJ, Palmer HM, Wright AJ, Hadermann J, Van Tendeloo G, Greaves C, The journal of physics and chemistry of solids 65, 87 (2004). http://doi.org/10.1016/j.jpcs.2003.08.012
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.059
Times cited: 15
DOI: 10.1016/j.jpcs.2003.08.012
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“Electron microscopy of carbon nanotubes and related structures”. Bernaerts D, Amelinckx S, Van Tendeloo G, van Landuyt J, The journal of physics and chemistry of solids 58, 1807 (1997). http://doi.org/10.1016/S0022-3697(98)80003-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.059
Times cited: 12
DOI: 10.1016/S0022-3697(98)80003-6
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“Polarizability induced cooperative proton ordering, coexistence of order/disorder and displacive dynamics and isotope effects in hydrogen-bonded systems”. Bussmann-Holder A, Dalal N, Michel KH, The journal of physics and chemistry of solids
T2 –, Williamsburg Workshop on Ferroelectrics 99, JAN 31-FEB 03, 1999, WILLIAMSBURG, VIRGINIA 61, 271 (2000). http://doi.org/10.1016/S0022-3697(99)00292-9
Abstract: Despite the general belief that hydrogen-bonded ferro- and antiferroelectrics undergo a pure order/disorder transition at the structural instability, new NMR data and a new theoretical concept yield convincing evidence that a pronounced displacive component is present in these systems, which modifies substantially the temperature dependencies of the tunnel and lattice mode frequencies. The experiments and their interpretation are presented. (C) 1999 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.059
Times cited: 8
DOI: 10.1016/S0022-3697(99)00292-9
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“A simplified approach to the band gap correction of defect formation energies : Al, Ga, and In-doped ZnO”. Saniz R, Xu Y, Matsubara M, Amini MN, Dixit H, Lamoen D, Partoens B, The journal of physics and chemistry of solids 74, 45 (2013). http://doi.org/10.1016/j.jpcs.2012.07.017
Abstract: The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the HeydScuseriaErnzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.059
Times cited: 36
DOI: 10.1016/j.jpcs.2012.07.017
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“First-principles study of CO and OH adsorption on in-doped ZnO surfaces”. Saniz R, Sarmadian N, Partoens B, Batuk M, Hadermann J, Marikutsa A, Rumyantseva M, Gaskov A, Lamoen D, The journal of physics and chemistry of solids 132, 172 (2019). http://doi.org/10.1016/j.jpcs.2019.04.023
Abstract: We present a first-principles computational study of CO and OH adsorption on non-polar ZnO (10¯10) surfaces doped with indium. The calculations were performed using a model ZnO slab. The position of the In dopants was varied from deep bulk-like layers to
the surface layers. It was established that the preferential location of the In atoms is at the surface by examining the dependence of
the defect formation energy as well as the surface energy on In location. The adsorption sites on the surface of ZnO and the energy
of adsorption of CO molecules and OH-species were determined in connection to In doping. It was found that OH has higher
bonding energy to the surface than CO. The presence of In atoms at the surface of ZnO is favorable for CO adsorption, resulting
in an elongation of the C-O bond and in charge transfer to the surface. The effect of CO and OH adsorption on the electronic
and conduction properties of surfaces was assessed. We conclude that In-doped ZnO surfaces should present a higher electronic
response upon adsorption of CO.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.059
Times cited: 7
DOI: 10.1016/j.jpcs.2019.04.023
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“Crystalline topological states at a topological insulator junction”. De Beule C, Saniz R, Partoens B, The journal of physics and chemistry of solids 128, 144 (2019). http://doi.org/10.1016/J.JPCS.2017.12.027
Abstract: We consider an interface between two strong time-reversal invariant topological insulators having surface states with opposite spin chirality, or equivalently, opposite mirror Chern number. We show that such an interface supports gapless modes that are protected by mirror symmetry. The interface states are investigated with a continuum model for the Bi2Se3 class of topological insulators that takes into account terms up to third order in the crystal momentum, which ensures that the model has the correct symmetry. The model parameters are obtained from ab initio calculations. Finally, we consider the effect of rotational mismatch at the interface, which breaks the mirror symmetry and opens a gap in the interface spectrum.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.059
DOI: 10.1016/J.JPCS.2017.12.027
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