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Record |
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Author |
Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
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Title |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
Type |
A1 Journal article |
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Year |
2006 |
Publication |
Journal of electronic materials |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
J Electron Mater |
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Volume |
35 |
Issue |
4 |
Pages |
592-598 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Publisher |
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Place of Publication |
Boston, Mass. |
Editor |
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Wos |
000237101800016 |
Publication Date |
2007-04-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0361-5235;1543-186X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.579 |
Times cited |
102 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.579; 2006 IF: 1.504 |
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Call Number |
UA @ lucian @ c:irua:58238 |
Serial |
1223 |
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Permanent link to this record |