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Author |
Ubbink, R.F.; Speelman, T.; Esteban, D.A.; van Leeuwen, M.; Stam, M.; Bals, S.; De Wijs, G.A.; van Eck, E.R.H.; Houtepen, A.J. |
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Title |
Phosphorus oxidation controls epitaxial shell growth in InP/ZnSe quantum dots |
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A1 Journal article |
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Year  |
2025 |
Publication |
ACS nano |
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Volume |
19 |
Issue |
1 |
Pages |
1150-1158 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell. |
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Wos |
WOS:001387064800001 |
Publication Date |
2024-12-30 |
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ISSN |
1936-0851 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Open Access |
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no |
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Call Number |
UA @ admin @ c:irua:211134 |
Serial |
9455 |
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