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Author Wu, Y.; Chen, G.; Yu, J.; Wang, D.; Ma, C.; Li, C.; Pennycook, S.J.; Yan, Y.; Wei, S.-H. pdf  doi
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  Title Hole-induced spontaneous mutual annihilation of dislocation pairs Type A1 Journal article
  Year (down) 2019 Publication The journal of physical chemistry letters Abbreviated Journal J Phys Chem Lett  
  Volume 10 Issue 23 Pages 7421-7425  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Dislocations are always observed during crystal growth, and it is usually desirable to reduce the dislocation density in high-quality crystals. Here, the annihilation process of the 30 degrees Shockley partial dislocation pairs in CdTe is studied by first-principles calculations. We found that the dislocations can glide relatively easily due to the weak local bonding. Our systematic study of the slipping mechanism of the dislocations suggests that the energy barrier for the annihilation process is low. Band structure calculations reveal that the band bending caused by the charge transfer between the two dislocation cores depends on the core-core distance. A simple linear model is proposed to describe the mechanism of formation of the dislocation pair. More importantly, we demonstrate that hole injection can affect the core structure, increase the mobility, and eventually trigger a spontaneous mutual annihilation, which could be employed as a possible facile way to reduce the dislocation density.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000501622700017 Publication Date 2019-11-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1948-7185 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 9.353 Times cited Open Access  
  Notes Approved Most recent IF: 9.353  
  Call Number UA @ admin @ c:irua:165068 Serial 6302  
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