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Record |
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Author |
Zhang, Q.-Z.; Bogaerts, A. |
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Title |
Capacitive electrical asymmetry effect in an inductively coupled plasma reactor |
Type |
A1 Journal Article |
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Year  |
2018 |
Publication |
Plasma Sources Science & Technology |
Abbreviated Journal |
Plasma Sources Sci T |
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Volume |
27 |
Issue |
10 |
Pages |
105019 |
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Keywords |
A1 Journal Article; electrical asymmetry effect, inductively coupled plasma, self-bias, independent control of the ion fluxes and ion energy; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ; |
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Abstract |
The electrical asymmetry effect is realized by applying multiple frequency power sources
(13.56 MHz and 27.12 MHz) to a capacitively biased substrate electrode in a specific inductively
coupled plasma reactor. On the one hand, by adjusting the phase angle θ between the multiple
frequency power sources, an almost linear self-bias develops on the substrate electrode, and
consequently the ion energy can be well modulated, while the ion flux stays constant within a
large range of θ. On the other hand, the plasma density and ion flux can be significantly
modulated by tuning the inductive power supply, while only inducing a small change in the self-
bias. Independent control of self-bias/ion energy and ion flux can thus be realized in this specific
inductively coupled plasma reactor. |
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Wos |
000448434100001 |
Publication Date |
2018-10-26 |
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Series Editor |
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Series Volume |
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Edition |
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ISSN |
1361-6595 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.302 |
Times cited |
1 |
Open Access |
Not_Open_Access |
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Notes |
We acknowledge financial support from the European Marie Skłodowska-Curie Individual Fellowship within H2020 (Grant Agreement 702604). This work was carried out in part using the Turing HPC infrastructure at the CalcUA core facility of the Universiteit Antwerpen, a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (department EWI) and the University of Antwerp. |
Approved |
Most recent IF: 3.302 |
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Call Number |
PLASMANT @ plasmant @c:irua:155506 |
Serial |
5069 |
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| Permanent link to this record |
