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Author |
Ding, F.; Li, B.; Akopian, N.; Perinetti, U.; Chen, Y.H.; Peeters, F.M.; Rastelli, A.; Zwiller, V.; Schmidt, O.G. |
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Title |
Single neutral excitons confined in AsBr3 in situ etched InGaAs quantum rings |
Type |
A1 Journal article |
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Year |
2011 |
Publication |
Journal of nanoelectronics and optoelectronics |
Abbreviated Journal |
J Nanoelectron Optoe |
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Volume |
6 |
Issue |
1 |
Pages |
51-57 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
We observe the evolution of single self-assembled semiconductor quantum dots into quantum rings during AsBr3 in situ etching. The direct three-dimensional imaging of In(Ga)As nanostructures embedded in GaAs matrix is demonstrated by selective wet chemical etching combined with atomic force microscopy. Single neutral excitons confined in these quantum rings are studied by magneto-photoluminescence. Oscillations in the exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we demonstrate that the period of the oscillations can be tuned by a gate potential that modifies the exciton confinement. The experimental results, combined with calculations, indicate that the exciton Aharonov-Bohm effect may account for the observed effects. |
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Wos |
000290692200005 |
Publication Date |
2011-04-18 |
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Edition |
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ISSN |
1555-130X;1555-1318; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.497 |
Times cited |
3 |
Open Access |
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Notes |
; We acknowledge L. P. Kouwenhoven and Z. G. Wang for support, C. C. Bof Bufon, C. Deneke, V. Fomin, A. Govorov, S. Kiravittaya, and Wen-Hao Chang for their help and discussions. We are grateful for the financial support of NWO (VIDI), the CAS-MPG programm, the DFG (FOR730), BMBF (No. 01BM459), NSFC China (60625402), and Flemish Science Foundation (FWO-V1). ; |
Approved |
Most recent IF: 0.497; 2011 IF: 0.556 |
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Call Number |
UA @ lucian @ c:irua:90187 |
Serial |
3025 |
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