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“Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells”. Brammertz G, Oueslati S, Buffiere M, Bekaert J, El Anzeery H, Messaoud KB, Sahayaraj S, Nuytten T, Koble C, Meuris M, Poortmans J;, IEEE journal of photovoltaics 5, 649 (2015). http://doi.org/10.1109/JPHOTOV.2014.2376053
Abstract: We have investigated different nonidealities in Cu2ZnSnSe4CdSZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorberbuffer heterojunction leading to a strong crossover behavior between dark and illuminated currentvoltage curves. In addition, a barrier of about 130 meV is present at the Moabsorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 3.712
Times cited: 13
DOI: 10.1109/JPHOTOV.2014.2376053
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“Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells”. Oueslati S, Brammertz G, Buffiere M, ElAnzeery H, Touayar O, Koeble C, Bekaert J, Meuris M, Poortmans J, Thin solid films : an international journal on the science and technology of thin and thick films 582, 224 (2015). http://doi.org/10.1016/j.tsf.2014.10.052
Abstract: We report on the electrical, optical and physical properties of Cu2ZnSnSe4 solar cells using an absorber layer fabricated by selenization of sputtered Cu, Zn and Cu10Sn90 multilayers. A maximum active-area conversion efficiency of 10.4% under AM1.5G was measured with a maximum short circuit current density of 39.7 mA/cm(2), an open circuit voltage of 394 mV and a fill factor of 66.4%. We perform electrical and optical characterization using photoluminescence spectroscopy, external quantum efficiency, current-voltage and admittance versus temperature measurements in order to derive information about possible causes for the low open circuit voltage values observed. The main defects derived from these measurements are strong potential fluctuations in the absorber layer as well as a potential barrier of the order of 133 meV at the back side contact. (C) 2014 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.879
Times cited: 49
DOI: 10.1016/j.tsf.2014.10.052
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“Spectral current-voltage analysis of kesterite solar cells”. Buffière M, Brammertz G, Oueslati S, El Anzeery H, Bekaert J, Ben Messaoud K, Köble C, Khelifi S, Meuris M, Poortmans J, Journal Of Physics D-Applied Physics 47, 175101 (2014). http://doi.org/10.1088/0022-3727/47/17/175101
Abstract: Current-voltage analysis using different optical band pass filters has been performed on Cu2ZnSnSe4 and Cu2ZnSn(S, Se)(4) thin-film solar cells. When using red or orange light (i.e. wavelengths above 600 nm), a distortion appears in the I-V curve of the Cu2ZnSnSe4 solar cell, indicating an additional potential barrier to the current flow in the device for these conditions of illumination. This barrier is reduced when using a Cu2ZnSn(S, Se)(4) absorber. Numerical simulations demonstrate that the barrier visible under red light could be explained by a positive conduction band offset at the front interface coupled with compensating defects in the buffer layer.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.588
Times cited: 25
DOI: 10.1088/0022-3727/47/17/175101
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