|
“Dielectric mismatch effect on coupled impurity states in a freestanding nanowire”. Li B, Partoens B, Peeters FM, Magnus W, Microelectronics journal 40, 446 (2009). http://doi.org/10.1016/j.mejo.2008.06.028
Abstract: We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.163
Times cited: 4
DOI: 10.1016/j.mejo.2008.06.028
|
|
|
“General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors”. Pourghaderi MA, Magnus W, Sorée B, de Meyer K, Meuris M, Heyns M, Journal of computational electronics 7, 475 (2008). http://doi.org/10.1007/s10825-008-0257-8
Abstract: Employing the quantum transmitting boundary (QTB) method, we have developed a two-dimensional Schrödinger-Poisson solver in order to investigate quantum transport in nano-scale CMOS transistors subjected to open boundary conditions. In this paper we briefly describe the building blocks of the solver that was originally written to model silicon devices. Next, we explain how to extend the code to semiconducting materials such as germanium, having conduction bands with energy ellipsoids that are neither parallel nor perpendicular to the channel interfaces or even to each other. The latter introduces mixed derivatives in the 2D effective mass equation, thereby heavily complicating the implementation of open boundary conditions. We present a generalized quantum transmitting boundary method that mainly leans on the completeness of the eigenstates of the effective mass equation. Finally, we propose a new algorithm to calculate the chemical potentials of the source and drain reservoirs, taking into account their mutual interaction at high drain voltages. As an illustration, we present the potential and carrier density profiles obtained for a (111) Ge NMOS transistor as well as the ballistic current characteristics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.526
Times cited: 3
DOI: 10.1007/s10825-008-0257-8
|
|
|
“Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference”. Compemolle S, Pourtois G, Sorée B, Magnus W, Chibotaru LF, Ceulemans A, Physical review : B : condensed matter and materials physics 77, 193406 (2008). http://doi.org/10.1103/PhysRevB.77.193406
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.77.193406
|
|
|
“Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Solid state communications 147, 31 (2008). http://doi.org/10.1016/j.ssc.2008.04.025
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
Times cited: 8
DOI: 10.1016/j.ssc.2008.04.025
|
|
|
“Dielectric mismatch effect on shallow impurity states in a semiconductor nanowire”. Li B, Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physical review : B : condensed matter and materials physics 77, 115335 (2008). http://doi.org/10.1103/PhysRevB.77.115335
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.77.115335
|
|
|
“Effect of a metallic gate on the energy levels of a shallow donor”. Slachmuylders AF, Partoens B, Peeters FM, Magnus W, Applied physics letters 92, 083104 (2008). http://doi.org/10.1063/1.2888742
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.2888742
|
|
|
“Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode”. Sorée B, Magnus W, Pourtois G, Journal of computational electronics 7, 380 (2008). http://doi.org/10.1007/s10825-008-0217-3
Abstract: We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.526
Times cited: 70
DOI: 10.1007/s10825-008-0217-3
|
|
|
“Excitons and trions in cylindrical nanowires with dielectric mismatch”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physica status solidi: C: conferences and critical reviews 5, 2416 (2008). http://doi.org/10.1002/pssc.200777650
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 3
DOI: 10.1002/pssc.200777650
|
|
|
“The effect of dielectric mismatch on excitons and trions in cylindrical semiconductor nanowires”. Slachmuylders A, Partoens B, Magnus W, Peeters FM, Journal of computational electronics (2008). http://doi.org/10.1007/s10825-008-0216-4
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.526
Times cited: 2
DOI: 10.1007/s10825-008-0216-4
|
|
|
“The effect of the dielectric mismatch on excitons and trions in freestanding nanowires”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 40, 2166 (2008). http://doi.org/10.1016/j.physe.2007.10.091
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 3
DOI: 10.1016/j.physe.2007.10.091
|
|
|
“Trions in cylindrical nanowires with a dielectric mismatch”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physical review : B : condensed matter and materials physics 76, 075405 (2007). http://doi.org/10.1103/PhysRevB.76.075405
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 12
DOI: 10.1103/PhysRevB.76.075405
|
|
|
“Quantized conductance without reservoirs : method of the nonequilibrium statistical operator”. Sorée B, Magnus W, Journal of computational electronics 6, 255 (2007). http://doi.org/10.1007/s10825-006-0094-6
Abstract: We introduce a generalized non-equilibrium statistical operator (NSO) to study a current-carrying system. The NSO is used to derive a set of quantum kinetic equations based on quantum mechanical balance equations. The quantum kinetic equations are solved self-consistently together with Poissons equation to solve a general transport problem. We show that these kinetic equations can be used to rederive the Landauer formula for the conductance of a quantum point contact, without any reference to reservoirs at different chemical potentials. Instead, energy dissipation is taken into account explicitly through the electron-phonon interaction. We find that both elastic and inelastic scattering are necessary to obtain the Landauer conductance.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.526
DOI: 10.1007/s10825-006-0094-6
|
|
|
“Dielectric mismatch effect on the exciton states in cylindrical nanowires”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physical review : B : condensed matter and materials physics 74, 235321 (2006). http://doi.org/10.1103/PhysRevB.74.235321
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 39
DOI: 10.1103/PhysRevB.74.235321
|
|
|
“A method to calculate tunneling leakage currents in silicon inversion layers”. Lujan GS, Sorée B, Magnus W, de Meyer K, Journal of applied physics 100, 033708 (2006). http://doi.org/10.1063/1.2219343
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 1
DOI: 10.1063/1.2219343
|
|
|
“Exciton states in cylindrical nanowires”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Journal of physics : condensed matter 18, 3951 (2006). http://doi.org/10.1088/0953-8984/18/16/005
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 27
DOI: 10.1088/0953-8984/18/16/005
|
|
|
“A new method to calculate leakage current and its applications for sub-45nm MOSFETs”. Lujan GS, Magnus W, Soree B, Pourghaderi MA, Veloso A, van Dal MJH, Lauwers A, Kubicek S, De Gendt S, Heyns M, De Meyer K, Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France. Ieee, S.l., page 489 (2005).
Abstract: This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
DOI: 10.1109/ESSDER.2005.1546691
|
|
|
“First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts”. Pourtois G, Lauwers A, Kittl J, Pantisano L, Sorée B, De Gendt S, Magnus W, Heyns A, Maex K, Microelectronic engineering 80, 272 (2005). http://doi.org/10.1016/j.mee.2005.04.080
Abstract: The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.806
Times cited: 31
DOI: 10.1016/j.mee.2005.04.080
|
|
|
“Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility”. Lujan GS, Magnus W, Sorée B, Ragnarsson LA, Trojman L, Kubicek S, De Gendt S, Heyns A, De Meyer K, Microelectronic engineering 80, 82 (2005). http://doi.org/10.1016/j.mee.2005.04.047
Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/j.mee.2005.04.047
|
|
|
“Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 96, 2305 (2004). http://doi.org/10.1063/1.1767619
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 14
DOI: 10.1063/1.1767619
|
|
|
“Moore's law: new playground for quantum physics”. van Rossum M, Schoenmaker W, Magnus W, de Meyer K, Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Physica status solidi: B: basic research 237, 426 (2003). http://doi.org/10.1002/pssb.200301788
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 2
DOI: 10.1002/pssb.200301788
|
|
|
“Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 93, 1230 (2003). http://doi.org/10.1063/1.1533108
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.1533108
|
|
|
“Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET”. Balaban SN, Pokatilov EP, Fomin VM, Gladilin VN, Devreese JT, Magnus W, Schoenmaker W, van Rossum M, Sorée B, Solid-State Electronics 46, 435 (2002). http://doi.org/10.1016/S0038-1101(01)00117-4
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.58
Times cited: 16
DOI: 10.1016/S0038-1101(01)00117-4
|
|
|
“Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures”. Pokatilov EP, Fomin VM, Balaban SN, Gladilin VN, Klimin SN, Devreese JT, Magnus W, Schoenmaker W, Collaert N, van Rossum M, de Meyer K, Journal Of Applied Physics 85, 6625 (1999). http://doi.org/10.1063/1.370171
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.370171
|
|