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Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires”. Peelaers H, Partoens B, Peeters FM, Acta physica Polonica: A: general physics, solid state physics, applied physics T2 –, WELCOME Scientific Meeting on Hybrid Nanostructures, AUG 28-31, 2011, Torun, POLAND 122, 294 (2012)
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Electronic and dynamical properties of Si/Ge core-shell nanowires”. Peelaers H, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 113411 (2010). http://doi.org/10.1103/PhysRevB.82.113411
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Phonon band structures of Si nanowires”. Peelaers H, Partoens B, Peeters FM, AIP conference proceedings 1199, 323 (2009). http://doi.org/10.1063/1.3295432
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Phonons in Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 95, 122110 (2009). http://doi.org/10.1063/1.3236526
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Phonon band structure of Si nanowires: a stability analysis”. Peelaers H, Partoens B, Peeters FM, Nano letters 9, 107 (2009). http://doi.org/10.1021/nl802613p
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First-principles study of doped Si and Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 40, 2169 (2008). http://doi.org/10.1016/j.physe.2007.10.090
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Properties of B and P doped Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 90, 263103 (2007). http://doi.org/10.1063/1.2752107
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Formation and segregation energies of B and P doped and BP codoped silicon nanowires”. Peelaers H, Partoens B, Peeters FM, Nano letters 6, 2781 (2006). http://doi.org/10.1021/nl061811p
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