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Author Polanco, C.A.; Pandey, T.; Berlijn, T.; Lindsay, L.
Title Defect-limited thermal conductivity in MoS₂ Type A1 Journal article
Year (down) 2020 Publication Physical review materials Abbreviated Journal
Volume 4 Issue 1 Pages 014004-14009
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The wide measured range of thermal conductivities (k) for monolayer MoS2 and the corresponding incongruent calculated values in the literature all suggest that extrinsic defect thermal resistance is significant and varied in synthesized samples of this material. Here we present defect-mediated thermal transport calculations of MoS2 using interatomic forces derived from density functional theory combined with Green's function methods to describe phonon-point-defect interactions and a Peierls-Boltzmann formalism for transport. Conductivity calculations for bulk and monolayer MoS2 using different density functional formalisms are compared. Nonperturbative first-principles methods are used to describe defect-mediated spectral functions, scattering rates, and phonon k, particularly from sulfur vacancies (VS), and in the context of the plethora of measured and calculated literature values. We find that k of monolayer MoS2 is sensitive to phonon-VS scattering in the range of experimentally observed densities, and that first-principles k calculations using these densities can explain the range of measured values found in the literature. Furthermore, measured k values for bulk MoS2 are more consistent because VS defects are not as prevalent.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000619240000001 Publication Date 2020-01-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2475-9953 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.4 Times cited Open Access
Notes Approved Most recent IF: 3.4; 2020 IF: NA
Call Number UA @ admin @ c:irua:190510 Serial 7757
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