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Author Wang, F.; Wang, C.; Chaves, A.; Song, C.; Zhang, G.; Huang, S.; Lei, Y.; Xing, Q.; Mu, L.; Xie, Y.; Yan, H. doi  openurl
  Title Prediction of hyperbolic exciton-polaritons in monolayer black phosphorus Type A1 Journal article
  Year (down) 2021 Publication Nature Communications Abbreviated Journal Nat Commun  
  Volume 12 Issue 1 Pages 5628  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract Hyperbolic polaritons exhibit large photonic density of states and can be collimated in certain propagation directions. The majority of hyperbolic polaritons are sustained in man-made metamaterials. However, natural-occurring hyperbolic materials also exist. Particularly, natural in-plane hyperbolic polaritons in layered materials have been demonstrated in MoO3 and WTe2, which are based on phonon and plasmon resonances respectively. Here, by determining the anisotropic optical conductivity (dielectric function) through optical spectroscopy, we predict that monolayer black phosphorus naturally hosts hyperbolic exciton-polaritons due to the pronounced in-plane anisotropy and strong exciton resonances. We simultaneously observe a strong and sharp ground state exciton peak and weaker excited states in high quality monolayer samples in the reflection spectrum, which enables us to determine the exciton binding energy of similar to 452 meV. Our work provides another appealing platform for the in-plane natural hyperbolic polaritons, which is based on excitons rather than phonons or plasmons.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000698984500003 Publication Date 2021-10-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2041-1723 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 12.124 Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: 12.124  
  Call Number UA @ admin @ c:irua:191688 Serial 8404  
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Author Song, C.-H.; Attri, P.; Ku, S.-K.; Han, I.; Bogaerts, A.; Choi, E.H. pdf  url
doi  openurl
  Title Cocktail of reactive species generated by cold atmospheric plasma: oral administration induces non-small cell lung cancer cell death Type A1 Journal article
  Year (down) 2021 Publication Journal Of Physics D-Applied Physics Abbreviated Journal J Phys D Appl Phys  
  Volume 54 Issue 18 Pages 185202  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Non-small cell lung cancer (NSCLC) is the most common type of lung cancer, with 85% of all lung cancer reported as NSCLC. Moreover, there are no effective treatments in advanced NSCLC. This study shows for the first time that oral administration of plasma-treated water (PTW) can cure advanced NSCLC. The cold plasma in water generates a cocktail of reactive species, and oral administration of this cocktail to mice showed no toxicities even at the highest dose of PTW, after a single dose and repeated doses for 28 d in mice. In vivo studies reveal that PTW showed favorable anticancer effects on chemo-resistant lung cancer, similarly to gefitinib treatment as a reference drug in a chemo-resistant NSCLC model. The anticancer activities of PTW seem to be involved in inhibiting proliferation and angiogenesis and enhancing apoptosis in the cancer cells. Interestingly, the PTW contributes to enhanced immune response and improved cachexia in the model.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000621503200001 Publication Date 2021-05-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-3727 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.588 Times cited Open Access OpenAccess  
  Notes National Research Foundation (NRF) of Korea, NRF-2016K1A4A3914113 ; We gratefully acknowledge financial support from the Leading Foreign Research Institute Recruitment program (Grant # NRF-2016K1A4A3914113) through the Basic Science Research Program of the National Research Foundation (NRF) of Korea and in part by Kwangwoon University. Approved Most recent IF: 2.588  
  Call Number PLASMANT @ plasmant @c:irua:176649 Serial 6747  
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Author Lubyshev, D.; Fastenau, J.M.; Fang, X.-M.; Wu, Y.; Doss, C.; Snyder, A.; Liu, W.K.; Lamb, M.S.M.; Bals, S.; Song, C. pdf  doi
openurl 
  Title Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications Type A1 Journal article
  Year (down) 2004 Publication Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena Abbreviated Journal  
  Volume 22 Issue 3 Pages 1565-1569  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V  s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Woodbury, N.Y. Editor  
  Language Wos 000222481400141 Publication Date 2004-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-211X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 25 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:87596 Serial 427  
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