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	Author	Spreitzer, M.; Egoavil, R.; Verbeeck, J.; Blank, D.H.A.; Rijnders, G.
	Title	Pulsed laser deposition of SrTiO₃ on a H-terminated Si substrate			Type	A1 Journal article
	Year	2013	Publication	Journal of materials chemistry C : materials for optical and electronic devices	Abbreviated Journal	J Mater Chem C
	Volume	1	Issue	34	Pages	5216-5222
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Interfacing oxides with silicon is a long-standing problem related to the integration of multifunctional oxides with semiconductor devices and the replacement of SiO2 with high-k gate oxides. In our study, pulsed laser deposition was used to prepare a SrTiO3 (STO) thin film on a H-terminated Si substrate. The main purpose of our work was to verify the ability of H-termination against the oxidation of Si during the PLD process and to analyze the resulting interfaces. In the first part of the study, the STO was deposited directly on the Si, leading to the formation of a preferentially textured STO film with a (100) orientation. In the second part, SrO was used as a buffer layer, which enabled the partial epitaxial growth of STO with STO(110)parallel to Si(100) and STO[001]parallel to Si[001]. The change in the growth direction induced by the application of a SrO buffer was governed by the formation of a SrO(111) intermediate layer and subsequently by the minimization of the lattice misfit between the STO and the SrO. Under the investigated conditions, approximately 10 nm thick interfacial layers formed between the STO and the Si due to reactions between the deposited material and the underlying H-terminated Si. In the case of direct STO deposition, SiOx formed at the interface with the silicon, while in the case when SrO was used as a buffer, strontium silicate grew directly on the silicon, which improves the growth quality of the uppermost STO.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000322911900005	Publication Date	2013-07-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2050-7526;2050-7534;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	5.256	Times cited	23	Open Access
	Notes	Ifox; Esteem2; Vortex; Countatoms; esteem2jra3 ECASJO;			Approved	Most recent IF: 5.256; 2013 IF: NA
	Call Number	UA @ lucian @ c:irua:110798UA @ admin @ c:irua:110798			Serial	2739
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	Author	Huijben, M.; Koster, G.; Kruize, M.K.; Wenderich, S.; Verbeeck, J.; Bals, S.; Slooten, E.; Shi, B.; Molegraaf, H.J.A.; Kleibeuker, J.E.; Van Aert, S.; Goedkoop, J.B.; Brinkman, A.; Blank, D.H.A.; Golden, M.S.; Van Tendeloo, G.; Hilgenkamp, H.; Rijnders, G.;
	Title	Defect engineering in oxide heterostructures by enhanced oxygen surface exchange			Type	A1 Journal article
	Year	2013	Publication	Advanced functional materials	Abbreviated Journal	Adv Funct Mater
	Volume	23	Issue	42	Pages	5240-5248
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, it is shown that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. It is proposed that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Weinheim	Editor
	Language		Wos	000327480900003	Publication Date	2013-06-10
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1616-301X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	12.124	Times cited	87	Open Access
	Notes	Countatoms; Vortex; Fwo; Ifox ECASJO_;			Approved	Most recent IF: 12.124; 2013 IF: 10.439
	Call Number	UA @ lucian @ c:irua:109273UA @ admin @ c:irua:109273			Serial	615
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	Author	Boschker, H.; Verbeeck, J.; Egoavil, R.; Bals, S.; Van Tendeloo, G.; Huijben, M.; Houwman, E.P.; Koster, G.; Blank, D.H.A.; Rijnders, G.
	Title	Preventing the reconstruction of the polar discontinuity at oxide heterointerfaces			Type	A1 Journal article
	Year	2012	Publication	Advanced functional materials	Abbreviated Journal	Adv Funct Mater
	Volume	22	Issue	11	Pages	2235-2240
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Perovskite oxide heteroepitaxy receives much attention because of the possibility to combine the diverse functionalities of perovskite oxide building blocks. A general boundary condition for the epitaxy is the presence of polar discontinuities at heterointerfaces. These polar discontinuities result in reconstructions, often creating new functionalities at the interface. However, for a significant number of materials these reconstructions are unwanted as they alter the intrinsic materials properties at the interface. Therefore, a strategy to eliminate this reconstruction of the polar discontinuity at the interfaces is required. We show that the use of compositional interface engineering can prevent the reconstruction at the La0.67Sr0.33MnO3/SrTiO3 (LSMO/STO) interface. The polar discontinuity at this interface can be removed by the insertion of a single La0.33Sr0.67O layer, resulting in improved interface magnetization and electrical conductivity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Weinheim	Editor
	Language		Wos	000304749600002	Publication Date	2012-03-23
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1616-301X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	12.124	Times cited	72	Open Access
	Notes	We wish to acknowledge the financial support of the Dutch Science Foundation (NWO) and the Dutch Nanotechnology program NanoNed. S. B. acknowledges the financial support from the European Union under the Framework 6 program under a contract for an Integrated Infrastructure Initiative. Reference 026019 ESTEEM. J. V. and G. V. T. acknowledge funding from the European Research Council under the 7th Framework Program (FP7), ERC grant N246791 – COUNTATOMS. R. E. acknowledges funding by the European Union Council under the 7th Framework Program (FP7) grant NNMP3-LA-2010-246102 IFOX. We thank Sandra Van Aert for stimulating discussions.			Approved	Most recent IF: 12.124; 2012 IF: 9.765
	Call Number	UA @ lucian @ c:irua:98907UA @ admin @ c:irua:98907			Serial	2712
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	Author	Boschker, H.; Huijben, M.; Vailinois, A.; Verbeeck, J.; Van Aert, S.; Luysberg, M.; Bals, S.; Van Tendeloo, G.; Houwman, E.P.; Koster, G.; Blank, D.H.A.; Rijnders, G.
	Title	Optimized fabrication of high-quality La_0.67Sr_0.33MnO₃ thin films considering all essential characteristics			Type	A1 Journal article
	Year	2011	Publication	Journal of physics: D: applied physics	Abbreviated Journal	J Phys D Appl Phys
	Volume	44	Issue	20	Pages	205001-205001,9
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In this paper, an overview of the fabrication and properties of high-quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high-quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In the literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 µB/Mn, a Curie temperature of 350 K and a residual resistivity of 60 µΩ cm. These results indicate that high-quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in the literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high-quality films, all properties have to be adressed. For LSMO devices, the thin-film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000290150900001	Publication Date	2011-04-29
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-3727;1361-6463;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.588	Times cited	99	Open Access
	Notes	This research was financially supported by the Dutch Science Foundation, by NanoNed, a nanotechnology program of the Dutch Ministry of Economic Affairs, and by the NanOxide program of the European Science Foundation. This work is supported in part by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SF00515.			Approved	Most recent IF: 2.588; 2011 IF: 2.544
	Call Number	UA @ lucian @ c:irua:89557UA @ admin @ c:irua:89557			Serial	2491
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	Author	Verbeeck, J.; Bals, S.; Lamoen, D.; Luysberg, M.; Huijben, M.; Rijnders, G.; Brinkman, A.; Hilgenkamp, H.; Blank, D.H.A.; Van Tendeloo, G.
	Title	Electronic reconstruction at n-type SrTiO₃/LaAlO₃ interfaces			Type	A1 Journal article
	Year	2010	Publication	Physical review : B : condensed matter and materials physics	Abbreviated Journal	Phys Rev B
	Volume	81	Issue	8	Pages	085113,1-085113,6
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Electron-energy-loss spectroscopy (EELS) is used to investigate single layers of LaAlO3 grown on SrTiO3 having an n-type interface as well as multilayers of LaAlO3 and SrTiO3 in which both n- and p-type interfaces occur. Only minor changes in Ti valence at the n-type interface are observed. This finding seems to contradict earlier experiments for other SrTiO3/LaAlO3 systems where large deviations in Ti valency were assumed to be responsible for the conductivity of these interfaces. Ab initio calculations have been carried out in order to interpret our EELS results. Using the concept of Bader charges, it is demonstrated that the so-called polar discontinuity is mainly resolved by lattice distortions and to a far lesser extent by changes in valency for both single layer and multilayer geometries.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000275053300040	Publication Date	2010-02-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1098-0121;1550-235X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.836	Times cited	25	Open Access
	Notes	Esteem 026019; Fwo			Approved	Most recent IF: 3.836; 2010 IF: 3.774
	Call Number	UA @ lucian @ c:irua:81768UA @ admin @ c:irua:81768			Serial	1005
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	Author	Leca, V.; Blank, D.H.A.; Rijnders, G.; Bals, S.; Van Tendeloo, G.
	Title	Superconducting single-phase Sr_1-xLa_xCuO₂ thin films with improved crystallinity grown by pulsed laser deposition			Type	A1 Journal article
	Year	2006	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	89	Issue	9	Pages
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Sr1-xLaxCuO2-delta (x=0.10-0.20) thin films exhibiting an oxygen-deficient 2 root 2a(p)x2 root a(p) x c structure (a(p) and c represent the cell parameters of the perovskite subcell) were epitaxially grown by means of pulsed laser deposition in low-pressure oxygen ambient. (001) KTaO3 and (001) SrTiO3 single crystals were used as substrates, with BaTiO3 as buffer layer. The Sr1-xLaxCuO2-delta films were oxidized during cooling down in order to yield the infinite-layer-type structure. By applying this method, high quality single-phase Sr1-xLaxCuO2 thin films could be obtained for 0.10 <= x <= 0.175 doping range. The films grown on BaTiO3/KTaO3 show superconductivity for 0.15 <= x <= 0.175 with optimum doping at x=0.15, in contrast with previously reported data. (c) 2006 American Institute of Physics.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000240236600077	Publication Date	2006-08-31
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	32	Open Access
	Notes	Fom; Fwo			Approved	Most recent IF: 3.411; 2006 IF: 3.977
	Call Number	UA @ lucian @ c:irua:60817			Serial	3366
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	Author	Huijben, M.; Rijnders, G.; Blank, D.H.A.; Bals, S.; Van Aert, S.; Verbeeck, J.; Van Tendeloo, G.; Brinkman, A.; Hilgenkamp, H.
	Title	Electronically coupled complementary interfaces between perovskite band insulators			Type	A1 Journal article
	Year	2006	Publication	Nature materials	Abbreviated Journal	Nat Mater
	Volume	5	Issue		Pages	556-560
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000238708900021	Publication Date	2006-06-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1476-1122;1476-4660;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	39.737	Times cited	315	Open Access
	Notes	Fwo			Approved	Most recent IF: 39.737; 2006 IF: 19.194
	Call Number	UA @ lucian @ c:irua:59713UA @ admin @ c:irua:59713			Serial	1019
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	Author	Bals, S.; Van Tendeloo, G.; Rijnders, G.; Huijben, M.; Leca, V.; Blank, D.H.A.
	Title	Transmission electron microscopy on interface engineered superconducting thin films			Type	A1 Journal article
	Year	2003	Publication	IEEE transactions on applied superconductivity	Abbreviated Journal	Ieee T Appl Supercon
	Volume	13	Issue	2:3	Pages	2834-2837
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2Ox buffer layer can avoid a variable interface configuration in YBa2Cu3O7-delta thin films grown on SrTiO3. The growth can also be controlled at an atomic level by, using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0.85La0.15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000184242400101	Publication Date	2003-07-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	13	Open Access
	Notes	Iuap V-1; Fwo			Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:103292			Serial	3712
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	Author	Bals, S.; Van Tendeloo, G.; Rijnders, G.; Blank, D.H.A.; Leca, V.; Salluzzo, M.
	Title	Optimisation of superconducting thin films by TEM			Type	A1 Journal article
	Year	2002	Publication	Physica: C : superconductivity	Abbreviated Journal	Physica C
	Volume	372/376	Issue	part 2	Pages	711-714
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	High-resolution electron microscopy is used to study the initial growth of different REBa2CU3O7-5 thin films. In DyBa2CU3O7-5 ultra-thin films, deposited on TiO2 terminated SrTiO3, two different types of interface arrangements occur: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO-bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk. This variable growth sequence is the origin of the presence of antiphase boundaries. In Nd1+xBa2-xCu3O7-5 thin films, antiphase boundaries tend to annihilate by the insertion of extra Nd-layers. This annihilation is correlated with the flat morphology of the film and the absence of growth spirals at the surface of the Nd-rich films. (C) 2002 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000178018800033	Publication Date	2002-08-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4534;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.404	Times cited	6	Open Access
	Notes				Approved	Most recent IF: 1.404; 2002 IF: 0.912
	Call Number	UA @ lucian @ c:irua:54796			Serial	2485
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	Author	Bals, S.; Rijnders, G.; Blank, D.H.A.; Van Tendeloo, G.
	Title	TEM of ultra-thin DyBa₂Cu₃O_7-x films deposited on TiO₂ terminated SrTiO₃			Type	A1 Journal article
	Year	2001	Publication	Physica: C : superconductivity	Abbreviated Journal	Physica C
	Volume	355	Issue	3/4	Pages	225-230
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Using pulsed laser deposition ultra-thin DyBa2Cu3O7-x films were deposited on a single terminated (0 0 1) SrTiOr(3) substrate. The initial growth was studied by high-resolution electron microscopy. Two different types of interface arrangements occur and were determined as: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk This variable growth sequence causes structural shifts, resulting in antiphase boundaries with displacement vector R = [0 0 1/3]. as well as local chemical variations. (C) 2001 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000169479500006	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4534;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.404	Times cited	26	Open Access
	Notes				Approved	Most recent IF: 1.404; 2001 IF: 0.806
	Call Number	UA @ lucian @ c:irua:54793			Serial	3484
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	Author	Koster, G.; Verbist, K.; Rijnders, G.; Rogalla, H.; Van Tendeloo, G.; Blank, D.H.A.
	Title	Structure and properties of (Sr,Ca)CuO₂-BaCuO₂ superlattices grown by pulsed laser interval deposition			Type	A1 Journal article
	Year	2001	Publication	Physica: C : superconductivity	Abbreviated Journal	Physica C
	Volume	353	Issue	3-4	Pages	167-183
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We report on the preparation of CuBa(2)(Sr(x)Ca(1-x))(n)Cu(n-1)O(y) compounds by fabrication of (Ba,Sr,Ca)CuO(2) superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the applicability of PLD to atomic engineering as well as the fabrication of artificial superconductors is demonstrated. The (Sr,Ca)CuO(2)-BaCuO(2) superlattices are characterized by X-ray diffraction, high-resolution electron microscopy (HREM) and selected area electron diffraction. The superlattice period has been deduced from electron diffraction patterns and XRD measurements. For Sr containing films, the best growth behavior is observed and films with the highest degree of crystallinity are obtained, whereas superconductivity is only found in less crystalline, Ca containing films. Under some deposition conditions and depending on the amount of Ba containing layers in the superlattice, it was observed that the BaCuO(2) material is converted to Ba(2)CuO(4-delta). Image simulations to interpret the HREM contrast are performed. (C) 2001 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000168861100003	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4534;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.404	Times cited	8	Open Access
	Notes				Approved	Most recent IF: 1.404; 2001 IF: 0.806
	Call Number	UA @ lucian @ c:irua:103417			Serial	3293
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	Author	Van Tendeloo, G.; Lebedev, O.I.; Verbist, K.; Abakumov, A.M.; Shpanchenko, R.V.; Antipov, E.V.; Blank, D.H.A.
	Title	The local structure of YBCO based materials by TEM			Type	H1 Book chapter
	Year	1999	Publication		Abbreviated Journal
	Volume		Issue		Pages	11-19
	Keywords	H1 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Kluwer Academic	Place of Publication	Dordrecht	Editor
	Language		Wos	000079308200002	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29709			Serial	1833
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	Author	Verbist, K.; Lebedev, O.I.; Verhoeven, M.A.J.; Winchern, R.; Rijnders, A.J.H.M.; Blank, D.H.A.; Tafuri, F.; Bender, H.; Van Tendeloo, G.
	Title	Microstructure of YBa₂Cu₃O_7-\delta Josephson junctions in relation to their properties			Type	A1 Journal article
	Year	1998	Publication	Superconductor science and technology	Abbreviated Journal	Supercond Sci Tech
	Volume	11	Issue		Pages	13-20
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000071820300005	Publication Date	2002-08-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048;1361-6668;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.878	Times cited		Open Access
	Notes				Approved	Most recent IF: 2.878; 1998 IF: 2.050
	Call Number	UA @ lucian @ c:irua:22112			Serial	2075
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	Author	Blank, D.H.A.; Rijnders, A.J.H.M.; Verhoeven, M.A.J.; Bergs, R.M.H.; Rogalla, H.; Verbist, K.; Lebedev, O.; Van Tendeloo, G.
	Title	Characterisation of multilayer ramp-type REBa₂Cu₃O_7-\delta structures by scanning probe microscopy and high-resolution electron microscopy			Type	A1 Journal article
	Year	1997	Publication	Journal of alloys and compounds T2 – Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France	Abbreviated Journal	J Alloy Compd
	Volume	251	Issue	1-2	Pages	206-208
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier Science	Place of Publication	Lausanne	Editor
	Language		Wos	A1997XM34000046	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-8388;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	3.133	Times cited		Open Access
	Notes				Approved	Most recent IF: 3.133; 1997 IF: 1.035
	Call Number	UA @ lucian @ c:irua:95868			Serial	310
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	Author	Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.; Rogalia, H.
	Title	Ga segregation in DyBa₂Cu₃O_7-\delta/PrBa₂Cu_3-xGa_xO_7-\delta/DyBa₂Cu₃O_7-\delta ramp-type Josephson junctions			Type	A1 Journal article
	Year	1997	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	70	Issue	9	Pages	1167-1169
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	A1997WL14700036	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	8	Open Access
	Notes				Approved	Most recent IF: 3.411; 1997 IF: 3.033
	Call Number	UA @ lucian @ c:irua:21426			Serial	1312
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	Author	Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.
	Title	Study of ramp-type Josephson junctions by HREM			Type	A1 Journal article
	Year	1997	Publication	Electronic Applications; Vol 2: Large Scale And Power Applications	Abbreviated Journal
	Volume		Issue	158	Pages	49-52
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Structural aspects of ramp-type Josephson junctions based on REBa2Cu3O7-delta high-T-c superconductors, are investigated by cross-section transmission electron microscopy and results related to fabrication process or physical properties. The barrier layer material is PrBa2Cu3-xGaxO7-delta. The ramp-geometry depends on the etching conditions. High levels of Ga doping (x>0.7) influence the microstructure of the barrier layer thereby changing the junctions properties.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000071955200012	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-7503-0487-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:102941			Serial	3333
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	Author	Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.
	Title	Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions			Type	A1 Journal article
	Year	1996	Publication	Superconductor science and technology	Abbreviated Journal	Supercond Sci Tech
	Volume	9	Issue		Pages	978-984
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	A1996VR54700009	Publication Date	2002-08-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048;1361-6668;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.325	Times cited	10	Open Access
	Notes				Approved	COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #
	Call Number	UA @ lucian @ c:irua:15469			Serial	1851
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