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“Measuring the absolute position of EELS ionisation edges in a TEM”. Potapov PL, Schryvers D, Ultramicroscopy 99, 73 (2004). http://doi.org/10.1016/S0304-3991(03)00185-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 29
DOI: 10.1016/S0304-3991(03)00185-2
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“Model based quantification of EELS spectra”. Verbeeck J, Van Aert S, Ultramicroscopy 101, 207 (2004). http://doi.org/10.1016/j.ultramic.2004.06.004
Abstract: Recent advances in model based quantification of electron energy loss spectra (EELS) are reported. The maximum likelihood method for the estimation of physical parameters describing an EELS spectrum, the validation of the model used in this estimation procedure, and the computation of the attainable precision, that is, the theoretical lower bound on the variance of these estimates, are discussed. Experimental examples on An and GaAs samples show the power of the maximum likelihood method and show that the theoretical prediction of the attainable precision can be closely approached even for spectra with overlapping edges where conventional EELS quantification fails. To provide end-users with a low threshold alternative to conventional quantification, a user friendly program was developed which is freely available under a GNU public license. (C) 2004 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 147
DOI: 10.1016/j.ultramic.2004.06.004
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“Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex>”. Kalitzova M, Vlakhov E, Marinov Y, Gesheva K, Ignatova VA, Lebedev O, Muntele C, Gijbels R, Vacuum: the international journal and abstracting service for vacuum science and technology 76, 325 (2004). http://doi.org/10.1016/j.vacuum.2004.07.055
Abstract: The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.53
Times cited: 2
DOI: 10.1016/j.vacuum.2004.07.055
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“EPMA and µ-SRXRF analysis and TEM-based microstructure characterization of a set of Roman glass fragments”. Fredrickx P, de Ryck I, Janssens K, Schryvers D, Petit J-P, Döcking H, X-ray spectrometry 33, 326 (2004). http://doi.org/10.1002/xrs.734
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 1.298
Times cited: 13
DOI: 10.1002/xrs.734
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“Grazing-exit electron probe x-ray microanalysis of light elements in particles”. Spolnik Z, Tsuji K, Van Grieken R, X-ray spectrometry 33, 16 (2004). http://doi.org/10.1002/XRS.656
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1002/XRS.656
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“Phase transitions: an alternative for stress accommodation in CMR manganate films”. Lebedev OI, Van Tendeloo G, Zeitschrift für Metallkunde 95, 244 (2004). http://doi.org/10.3139/146.017943
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.3139/146.017943
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