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Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.

Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)

Impact Factor: 1.124

Times cited: 9

DOI: 10.1016/0168-583X(95)01236-2

Additional Links: UA library record; WoS full record; WoS citing articles

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	1–2 of 2 records found matching your query (RSS \| history):

	“Ion beam synthesis of β-SiC at 950⁰C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research B112, 325 (1996) Keywords: A3 Journal article; Electron microscopy for materials research (EMAT) Additional Links: UA library record Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Word XML
	“Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2 Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix. Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) Impact Factor: 1.124 Times cited: 9 DOI: 10.1016/0168-583X(95)01236-2 Additional Links: UA library record; WoS full record; WoS citing articles Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Word XML