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Author Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O.
Title Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE Type A1 Journal article
Year (down) 1999 Publication Physica: B : condensed matter T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA Abbreviated Journal Physica B
Volume 273-4 Issue Pages 140-143
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved.
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Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000084452200031 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.386 Times cited 5 Open Access
Notes Approved Most recent IF: 1.386; 1999 IF: 0.725
Call Number UA @ lucian @ c:irua:102892 Serial 2925
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