| Record |
| Author |
Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
| Title |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
Type |
P1 Proceeding |
Year  |
2004 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
|
| Volume |
798 |
Issue |
|
Pages |
Y10.22,1-6 |
| Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Wuhan |
Editor |
|
| Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0272-9172 |
ISBN |
|
Additional Links |
UA library record |
| Impact Factor |
|
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:54861 |
Serial |
1424 |
| Permanent link to this record |
