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Author Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. pdf  doi
openurl 
  Title Photoelectric and electrical responses of several erbium silicide/silicon interfaces Type A1 Journal article
  Year (down) 1996 Publication Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 173-177  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996VJ86100039 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104392 Serial 2611  
Permanent link to this record
 

 
Author Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.; Frangis, N.; van Landuyt, J. doi  openurl
  Title High crystalline quality erbium silicide films on (100) silicon grown in high vacuum Type A1 Journal article
  Year (down) 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 151-155  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996VJ86100034 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 14 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15459 Serial 1423  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. doi  openurl
  Title Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate Type A1 Journal article
  Year (down) 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 163-168  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996VJ86100037 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15458 Serial 953  
Permanent link to this record
 

 
Author Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.; Briers, J.; Bao, Y.; Geise, H.J. pdf  doi
openurl 
  Title An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene) Type A1 Journal article
  Year (down) 1996 Publication Macromolecules Abbreviated Journal Macromolecules  
  Volume 29 Issue 5 Pages 1554-1561  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos A1996TY13900024 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0024-9297;1520-5835; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.8 Times cited 10 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15452 Serial 939  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. pdf  doi
openurl 
  Title Structural characterisation of erbium silicide thin films of an Si(111) substrate Type A1 Journal article
  Year (down) 1996 Publication Journal of alloys and compounds Abbreviated Journal J Alloy Compd  
  Volume 234 Issue 2 Pages 244-250  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996TX65100020 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.999 Times cited 14 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:15451 Serial 3213  
Permanent link to this record
 

 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. doi  openurl
  Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
  Year (down) 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B  
  Volume 120 Issue 1-4 Pages 186-189  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Amsterdam Editor  
  Language Wos A1996VZ24500040 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 2 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95882 Serial 947  
Permanent link to this record
 

 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. doi  openurl
  Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
  Year (down) 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B  
  Volume 112 Issue 1-4 Pages 325-329  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100069 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95886 Serial 1742  
Permanent link to this record
 

 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. doi  openurl
  Title Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope Type A1 Journal article
  Year (down) 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal Nucl Instrum Meth B  
  Volume B112 Issue Pages 133-138  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15453 Serial 2423  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. openurl 
  Title New erbium silicide superstructures: a study by high resolution electron microscopy Type A1 Journal article
  Year (down) 1996 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 158 Issue Pages 107-116  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1996VY72800013 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 6 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:15460 Serial 2313  
Permanent link to this record
 

 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. openurl 
  Title Ion beam synthesis of β-SiC at 9500C and structural characterization Type A3 Journal article
  Year (down) 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal  
  Volume B112 Issue Pages 325-329  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-5087 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15454 Serial 1740  
Permanent link to this record
 

 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. openurl 
  Title Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope Type P1 Proceeding
  Year (down) 1996 Publication Materials Research Society symposium proceedings Abbreviated Journal  
  Volume 404 Issue Pages 189-194  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Wuhan Editor  
  Language Wos A1996BG19E00025 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0272-9172 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15457 Serial 2424  
Permanent link to this record
 

 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. openurl 
  Title How to interpret short-range order HREM images Type P3 Proceeding
  Year (down) 1996 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords P3 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Dublin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:110168 Serial 1493  
Permanent link to this record
 

 
Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. openurl 
  Title A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals Type A1 Journal article
  Year (down) 1996 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn  
  Volume 40 Issue Pages 189-201  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Springfield, Va Editor  
  Language Wos A1996VL09200003 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.349 Times cited 4 Open Access  
  Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #  
  Call Number UA @ lucian @ c:irua:15428 Serial 418  
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Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. pdf  doi
openurl 
  Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
  Year (down) 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond  
  Volume 11 Issue 11 Pages 1194-1202  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.  
  Address  
  Corporate Author Thesis  
  Publisher Inst Materials Place of Publication London Editor  
  Language Wos A1995TQ95100016 Publication Date 2014-01-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.995 Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95911 Serial 2654  
Permanent link to this record
 

 
Author Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.; Ivanov, V.; Nagy, J.B. pdf  doi
openurl 
  Title Electron microscopy study of coiled carbon tubules Type A1 Journal article
  Year (down) 1995 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal  
  Volume 71 Issue 3 Pages 605-630  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1995QQ40400009 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610;1460-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 72 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13290 Serial 969  
Permanent link to this record
 

 
Author Vanhellemont, J.; Claeys, C.; van Landuyt, J. pdf  doi
openurl 
  Title In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces Type A1 Journal article
  Year (down) 1995 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 150 Issue Pages 497-506  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1995RQ21500043 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 6 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13293 Serial 1582  
Permanent link to this record
 

 
Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; Broeckx, J.; van Landuyt, J. pdf  doi
openurl 
  Title Modification of the multislice method for calculating coherent STEM images Type A1 Journal article
  Year (down) 1995 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 150 Issue Pages 13-22  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1995RQ21500002 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 5 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13292 Serial 2159  
Permanent link to this record
 

 
Author Amelinckx, S.; Bernaerts, D.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. pdf  doi
openurl 
  Title A structure model and growth mechanism for multishell carbon nanotubes Type A1 Journal article
  Year (down) 1995 Publication Science Abbreviated Journal Science  
  Volume 267 Issue Pages 1334-1338  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos A1995QK06800041 Publication Date 2006-10-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0036-8075;1095-9203; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 33.611 Times cited 169 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:13309 Serial 3305  
Permanent link to this record
 

 
Author Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. doi  openurl
  Title Some examples of electron microscopy studies of microstructures and phase transitions in solids Type A1 Journal article
  Year (down) 1995 Publication Meccanica Abbreviated Journal Meccanica  
  Volume 30 Issue Pages 433-438  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Milano Editor  
  Language Wos A1995TD08800003 Publication Date 2005-04-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0025-6455;1572-9648; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.949 Times cited 1 Open Access  
  Notes Approved CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #  
  Call Number UA @ lucian @ c:irua:13170 Serial 3054  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Millan, A.; de Keyzer, R. doi  openurl
  Title Electron microscopical investigation of AgBr needle crystals Type A1 Journal article
  Year (down) 1995 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 151 Issue Pages 335-341  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995RE62100017 Publication Date 2003-05-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.698 Times cited 14 Open Access  
  Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #  
  Call Number UA @ lucian @ c:irua:13163 Serial 941  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R. doi  openurl
  Title Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals Type A1 Journal article
  Year (down) 1995 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 337 Issue Pages 153-165  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995RQ74900024 Publication Date 2003-05-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.925 Times cited 10 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13162 Serial 1836  
Permanent link to this record
 

 
Author Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. pdf  doi
openurl 
  Title Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 Type A1 Journal article
  Year (down) 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 114 Issue 2 Pages 560-574  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc,  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1995QH33100040 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.133 Times cited 23 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:13289 Serial 3261  
Permanent link to this record
 

 
Author Udoh, K.-I.; El- Araby, A.M.; Tanaka, Y.; Hisatsune, K.; Yasuda, K.; Van Tendeloo, G.; van Landuyt, J. doi  openurl
  Title Structural aspects of AuCu I or AuCu II and a cuboidal black configuration of f.c.c. disordered phase in AuCu-Pt and AuCu-Ag pseudobinary alloys Type A1 Journal article
  Year (down) 1995 Publication Materials science and engineering: part A: structural materials: properties, microstructure and processing Abbreviated Journal Mat Sci Eng A-Struct  
  Volume 203 Issue Pages 154-164  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos A1995TM62800016 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-5093; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.567 Times cited 15 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:13298 Serial 3205  
Permanent link to this record
 

 
Author Hole, D.E.; Townsend, P.D.; Barton, J.D.; Nistor, L.C.; van Landuyt, J. doi  openurl
  Title Gallium colloid formation during ion implantation of glass Type A1 Journal article
  Year (down) 1995 Publication Journal of non-crystalline solids Abbreviated Journal J Non-Cryst Solids  
  Volume 180 Issue Pages 266-274  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995QB59400018 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-3093; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.766 Times cited 34 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:13288 Serial 1313  
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Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. pdf  doi
openurl 
  Title On the interpretation of HREM images of partially ordered alloys Type A1 Journal article
  Year (down) 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 60 Issue 2 Pages 265-282  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995TZ14700008 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.436 Times cited 20 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13014 Serial 2438  
Permanent link to this record
 

 
Author De Meulenaere, P.; van Dyck, D.; Van Tendeloo, G.; van Landuyt, J. pdf  doi
openurl 
  Title Dynamical electron diffraction in substitutionally disordered column structures Type A1 Journal article
  Year (down) 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 60 Issue 1 Pages 171-185  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995TG59500017 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.436 Times cited 14 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13013 Serial 770  
Permanent link to this record
 

 
Author Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G. openurl 
  Title A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals Type A1 Journal article
  Year (down) 1995 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal  
  Volume 71 Issue 5 Pages 1177-1189  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1995QW79500016 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13296 Serial 3721  
Permanent link to this record
 

 
Author Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. openurl 
  Title Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope Type A3 Journal article
  Year (down) 1995 Publication Materials science and technology Abbreviated Journal  
  Volume 11 Issue Pages 1194-1204  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1995TQ95100016 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13297 Serial 2655  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. openurl 
  Title A temperature study of mixed AgBr-AgBrI tabular crystals Type H1 Book chapter
  Year (down) 1995 Publication Abbreviated Journal  
  Volume Issue Pages 70-76  
  Keywords H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Hawaii Editor  
  Language Wos A1995RY19900011 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume 39 Series Issue 1 Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes Approved PHYSICS, APPLIED 47/145 Q2 #  
  Call Number UA @ lucian @ c:irua:8459 Serial 3501  
Permanent link to this record
 

 
Author Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. openurl 
  Title Structural aspects of carbon nanotubes Type P3 Proceeding
  Year (down) 1995 Publication Abbreviated Journal  
  Volume Issue Pages 551-555  
  Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher World Scientific Place of Publication Singapore Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:13295 Serial 3206  
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