Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.

Abstract: Homogenized Ni39.6Mn47.5T12.9 material was investigated by different electron microscopy techniques. Apart from the martensite precursor distortions typical for B2 phase alloys undergoing a thermoelastic martensitic transformation upon cooling, coherent dodecahedron-shaped precipitates with sizes between 20 and 100 nm and faceted by lozenge shapes of {110}-type planes are observed. Selected-area and microdiffraction patterns reveal an overall unit cell with a size of 3 x 3 x 3 units of the bcc lattice of the matrix and a body-centred symmetry without screw axes. Finally a ternary gamma-brass-type atomic structure of space group 14(3) over bar m is suggested for these precipitates in accordance with the obtained symmetry constraints, the energy-dispersive X-ray measurements and high-resolution transmission electron microscopy images. This is the first time this type of structure is found in an alloy completely consisting of transition-metal elements.

Abstract: Thr structural, electronic, and magnetic properties of the highly mismatched perovskite oxides, Th(0.35)A(0.65)MnO(3), where Ais for the alkaline earth divalent cations (Ca, Ba, Sr), which are all characterized by the same large tolerance factor (t=0.934), have been investigated by using electron microscopy, electrical resistivity, magnetic susceptibility, and magnetization. It is clearly established that a transition from ferromagnetic metallic towards spin-glass insulator samples is induced as the A-site cationic size mismatch is increased. Moreover, the magnetoresistance (MR) properties of these manganites are strongly reduced for the spin-glass insulators, demonstrating that the A-sire cationic disorder is detrimental for the colossal MR properties. Based on these results, a new electronic and magnetic diagram is established that shows that the A-site disorder, rather than the A-site average cationic size (or t) is the relevant factor for generating spin-glass insulating manganites. [S0163-1829(99)01746-4].

Abstract: The giant isotope effect on the ferro- and antiferroelectric transition temperature upon deuteration of hydrogen-bonded systems is well known experimentally since various decades. Yet, theoretically only recently a microscopic understanding of this effect has been achieved which, specifically, took into account the geometry of the O ... H ... O bond. The implications of this modeling are multiple as numerous hydrogen-bonded organic systems show the same effects as ferro- and antiferroelectrics, i.e., cooperative proton tunneling at a well-defined temperature.