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Author Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Tafuri, F.; Granozio, F.M.; Di Chiara, A.; Bender, H.
Title A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction Type A1 Journal article
Year (down) 1999 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 74 Issue 7 Pages 1024-1026
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X].
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000078571400043 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 5 Open Access
Notes Approved Most recent IF: 3.411; 1999 IF: 4.184
Call Number UA @ lucian @ c:irua:102912 Serial 2686
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Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
Title Morphology and defects in shallow trench isolation structures Type A1 Journal article
Year (down) 1999 Publication Conference series of the Institute of Physics Abbreviated Journal
Volume 164 Issue Pages 443-446
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000166835300094 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29690 Serial 2206
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Author Verbist, K.; Lebedev, O.I.; Verhoeven, M.A.J.; Winchern, R.; Rijnders, A.J.H.M.; Blank, D.H.A.; Tafuri, F.; Bender, H.; Van Tendeloo, G.
Title Microstructure of YBa2Cu3O7-\delta Josephson junctions in relation to their properties Type A1 Journal article
Year (down) 1998 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech
Volume 11 Issue Pages 13-20
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000071820300005 Publication Date 2002-08-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.878 Times cited Open Access
Notes Approved Most recent IF: 2.878; 1998 IF: 2.050
Call Number UA @ lucian @ c:irua:22112 Serial 2075
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Author Vanhellemont, J.; Bender, H.; van Landuyt, J.
Title TEM studies of processed Si device materials Type A1 Journal article
Year (down) 1997 Publication Conference series of the Institute of Physics Abbreviated Journal
Volume 157 Issue Pages 393-402
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000071954600079 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21430 Serial 3486
Permanent link to this record