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“HREM investigation of La1-xCaxMnO3- thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier H-U, Electron microscopy: vol. 2 , 517 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Structure of Y123 and Y247 fluorinated phases by HREM”. Lebedev OI, Van Tendeloo G, Abakumov AM, Shpanchenko RV, Rozova MG, Antipov EV, Electron microscopy: vol. 3 , 297 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“HREM investigation of La(1-x)Ca(x)MnO3-delta thin films”. Lebedev O, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier HU, , 517 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Defect characterization in high temperature implanted 6H-SiC using TEM”. Suvorov AV, Lebedev OI, Suvorova AA, van Landuyt J, Usov IO, Nuclear instruments and methods in physics research: B 127/128, 347 (1997). http://doi.org/10.1016/S0168-583X(96)00954-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.109
Times cited: 17
DOI: 10.1016/S0168-583X(96)00954-8
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“Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy”. Blank DHA, Rijnders AJHM, Verhoeven MAJ, Bergs RMH, Rogalla H, Verbist K, Lebedev O, Van Tendeloo G, Journal of alloys and compounds
T2 –, Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France 251, 206 (1997). http://doi.org/10.1016/S0925-8388(96)02799-5
Abstract: We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.133
DOI: 10.1016/S0925-8388(96)02799-5
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“Structural features, oxygen and fluorine doping in Cu-based superconductors”. Antipov EV, Putilin SN, Shpanchenko RV, Alyoshin VA, Rozova MG, Abakumov AM, Mikhailova DA, Balagurov AM, Lebedev O, Van Tendeloo G, Physica: C : superconductivity
T2 –, International Conference on Materials and Mechanisms of, Superconductivity –, High Temperature Superconductors V, Feb. 28-Mar. 04, 1997, Beijing, Peoples R. China 282, 61 (1997). http://doi.org/10.1016/S0921-4534(97)00210-4
Abstract: The variation of structures and superconducting properties by changing extra oxygen or fluorine atoms concentration in Hg-based Cu mixed oxides and YBa2Cu3O6+delta was studied. The data obtained by NPD study of Hg-1201 can be considered as an evidence of the conventional oxygen doping mechanism with 2 delta holes per (CuO2) layer. The extra oxygen atom was found to be located in the middle of the Hg mesh only. Different formal charges of oxygen and fluorine inserted into reduced 123 structure results in its distinct variations. The fluorine incorporation into strongly reduced YBa2Cu3O6+delta causes a significant structural rearrangement and the formation of a new compound with a composition close to YBa2Cu3O6F2 (tetragonal alpha = 3.87 Angstrom and c approximate to 13 Angstrom), which structure was deduced from the combined results of X-ray diffraction, electron diffraction and high resolution electron microscopy. Fluorination treatment by XeF2 of nonsuperconducting 123 samples causes an appearance of bulk superconductivity with T-c up to 94K.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 10
DOI: 10.1016/S0921-4534(97)00210-4
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“Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Rogalia H, Applied physics letters 70, 1167 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 8
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“Study of ramp-type Josephson junctions by HREM”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Electronic Applications, Vol 2: Large Scale And Power Applications , 49 (1997)
Abstract: Structural aspects of ramp-type Josephson junctions based on REBa2Cu3O7-delta high-T-c superconductors, are investigated by cross-section transmission electron microscopy and results related to fabrication process or physical properties. The barrier layer material is PrBa2Cu3-xGaxO7-delta. The ramp-geometry depends on the etching conditions. High levels of Ga doping (x>0.7) influence the microstructure of the barrier layer thereby changing the junctions properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Structure determination of YBCO fluorinated phases by HREM”. Van Tendeloo G, Lebedev OI, Shpanchenko RV, Antipov EV, Journal of electron microscopy 1, 23 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
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“Inducing superconductivity and structural transformations by fluorination of reduced YBCO”. Shpanchenko RV, Rozova MG, Abakumov AM, Ardashnikova EI, Kovba ML, Putilin SN, Antipov EV, Lebedev OI, Van Tendeloo G, Physica: C : superconductivity 280, 272 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 35
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“HREM study of ion implantation in 6H-SiC at high temperatures”. Lebedev OI, Van Tendeloo G, Suvorova AA, Usov IO, Suvorov AV, Journal of electron microscopy 46, 271 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 7
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“In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Conference series of the Institute of Physics 157, 55 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“The crystal structure of Ca3ReO6”. Abakumov AM, Shpanchenko RV, Antipov EV, Lebedev OI, Van Tendeloo G, Journal of solid state chemistry 131, 305 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 10
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“Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Superconductor science and technology 9, 978 (1996). http://doi.org/10.1088/0953-2048/9/11/009
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 10
DOI: 10.1088/0953-2048/9/11/009
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