Abstract: 'Natural' platelets are planar defects in {001} planes found in natural type-IaA/B diamonds. 'Man-made' platelets are platelets formed in the laboratory by annealing type-IaA diamonds at temperatures over 2500 degrees C. Careful study shows that the infrared (IR) spectra of the 'man-made' platelets are different from the IR spectra of 'natural' platelets. High-temperature (T greater than or equal to 2000 degrees C) annealing of platelets containing type-IaA/B diamonds modifies the IR absorption spectrum owing to the 'natural' platelets and makes it similar to the IR spectrum of the 'man-made' platelets. It is suggested that such high-temperature annealing changes the structure of the 'natural' platelets. The changes are too subtle to be detected by electron microscopy techniques. Topographic electron-energy-loss spectroscopy shows that platelets contain nitrogen at an average density of 0.7 atoms per a(0)(2); however, high-temperature annealing does not seem to affect the concentration of the nitrogen in the platelets.

Abstract: It is shown that the infrared absorption spectra of pure type IaB diamonds, namely those that on cursory examination show only a B one-phonon component and neither A nor D, and the complete absence of a B' localized-mode platelet absorption peak, may be divided into two subgroups. The defect content of specimens of one of these subgroups has been studied before and comprises slip dislocations and voidites in random homogeneous distributions unconnected with the transformation of platelets to dislocation loops. Electron microscopy of a specimen of the other subgroup, which may be recognized by the presence of weak additional one-phonon absorption near 1100 cm-1, shows a population of dislocation loops resulting from the complete transformation of a former platelet population, plus accompanying voidites. It is suggested that the extra absorption is caused by the dislocation loops. Observation of the way in which loops and voidites are distributed suggests that voidite production and platelet transformation may not, after all, be interlinked phenomena, but parallel independent processes both promoted by the same unknown conditions.

Abstract: Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.