| Records |
| Author |
Griffin, E.; Mogg, L.; Hao, G.-P.; Kalon, G.; Bacaksiz, C.; Lopez-Polin, G.; Zhou, T.Y.; Guarochico, V.; Cai, J.; Neumann, C.; Winter, A.; Mohn, M.; Lee, J.H.; Lin, J.; Kaiser, U.; Grigorieva, I., V; Suenaga, K.; Ozyilmaz, B.; Cheng, H.-M.; Ren, W.; Turchanin, A.; Peeters, F.M.; Geim, A.K.; Lozada-Hidalgo, M. |
| Title |
Proton and Li-Ion permeation through graphene with eight-atom-ring defects |
Type |
A1 Journal article |
Year  |
2020 |
Publication |
Acs Nano |
Abbreviated Journal |
Acs Nano |
| Volume |
14 |
Issue |
6 |
Pages |
7280-7286 |
| Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
| Abstract |
Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries, and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here, we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes similar to 1000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of eight-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to that of the six-atom rings of graphene and a relatively low barrier of similar to 0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
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Editor |
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| Language |
|
Wos |
000543744100086 |
Publication Date |
2020-05-19 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1936-0851 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
17.1 |
Times cited |
34 |
Open Access |
|
| Notes |
; The work was supported by the Lloyd's Register Foundation, EPSRC-EP/N010345/1, the European Research Council, the Graphene Flagship, the Deutsche Forschungsgemeinschaft project TRR 234 “CataLight” (Project B7, Grant No. 364549901), and the research infrastructure Grant No. INST 275/25 7-1 FUGG. E.G. and L.M. acknowledge the EPSRC NowNANO programme for funding. ; |
Approved |
Most recent IF: 17.1; 2020 IF: 13.942 |
| Call Number |
UA @ admin @ c:irua:170708 |
Serial |
6586 |
| Permanent link to this record |
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| Author |
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. |
| Title |
The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN |
Type |
A1 Journal article |
| Year |
2005 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
| Volume |
87 |
Issue |
6 |
Pages |
061905,1-3 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
|
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| Language |
|
Wos |
000231016900019 |
Publication Date |
2005-08-02 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
|
| ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.411 |
Times cited |
57 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.411; 2005 IF: 4.127 |
| Call Number |
UA @ lucian @ c:irua:54808 |
Serial |
2910 |
| Permanent link to this record |
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| |
| Author |
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. |
| Title |
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN |
Type |
A1 Journal article |
| Year |
2005 |
Publication |
Springer proceedings in physics |
Abbreviated Journal |
|
| Volume |
107 |
Issue |
|
Pages |
389-392 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Berlin |
Editor |
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| Language |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0930-8989 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
|
Times cited |
|
Open Access |
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| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:94775 |
Serial |
3707 |
| Permanent link to this record |
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| |
| Author |
Bogaerts, A.; Verscharen, W.; Steers, E. |
| Title |
Computer simulations of crater profiles in glow discharge optical emission spectrometry: comparison with experiments and investigation of the underlying mechanisms |
Type |
A1 Journal article |
| Year |
2004 |
Publication |
Spectrochimica acta: part B : atomic spectroscopy |
Abbreviated Journal |
Spectrochim Acta B |
| Volume |
59 |
Issue |
|
Pages |
1403-1411 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
|
Place of Publication |
Oxford |
Editor |
|
| Language |
|
Wos |
000224589900008 |
Publication Date |
2004-07-23 |
| Series Editor |
|
Series Title |
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Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0584-8547; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.241 |
Times cited |
14 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.241; 2004 IF: 3.086 |
| Call Number |
UA @ lucian @ c:irua:48103 |
Serial |
469 |
| Permanent link to this record |
| |
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| |
| Author |
Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
| Title |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
Type |
P1 Proceeding |
| Year |
2004 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
|
| Volume |
798 |
Issue |
|
Pages |
Y10.22,1-6 |
| Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| Abstract |
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| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Wuhan |
Editor |
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| Language |
|
Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
|
Edition |
|
| ISSN |
0272-9172 |
ISBN |
|
Additional Links |
UA library record |
| Impact Factor |
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Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:54861 |
Serial |
1424 |
| Permanent link to this record |
