| Records |
| Author |
Heyne, M.H.; de Marneffe, J.-F.; Nuytten, T.; Meersschaut, J.; Conard, T.; Caymax, M.; Radu, I.; Delabie, A.; Neyts, E.C.; De Gendt, S. |
| Title |
The conversion mechanism of amorphous silicon to stoichiometric WS2 |
Type |
A1 Journal article |
Year  |
2018 |
Publication |
Journal of materials chemistry C : materials for optical and electronic devices |
Abbreviated Journal |
J Mater Chem C |
| Volume |
6 |
Issue |
15 |
Pages |
4122-4130 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
The deposition of ultra-thin tungsten films and their related 2D chalcogen compounds on large area dielectric substrates by gas phase reactions is challenging. The lack of nucleation sites complicates the adsorption of W-related precursors and subsequent sulfurization usually requires high temperatures. We propose here a technique in which a thin solid amorphous silicon film is used as reductant for the gas phase precursor WF6 leading to the conversion to metallic W. The selectivity of the W conversion towards the underlying dielectric surfaces is demonstrated. The role of the Si surface preparation, the conversion temperature, and Si thickness on the formation process is investigated. Further, the in situ conversion of the metallic tungsten into thin stoichiometric WS2 is achieved by a cyclic approach based on WF6 and H2S pulses at the moderate temperature of 450 1C, which is much lower than usual oxide sulfurization processes. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Wos |
000430538000036 |
Publication Date |
2018-03-20 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
2050-7526 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
5.256 |
Times cited |
4 |
Open Access |
OpenAccess |
| Notes |
This work was supported throughout a strategic fundamental research grant for M. H. by the agency Flanders innovation & entrepreneurship (VLAIO). |
Approved |
Most recent IF: 5.256 |
| Call Number |
PLASMANT @ plasmant @c:irua:150968 |
Serial |
4921 |
| Permanent link to this record |
| |
|
| |
| Author |
Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; |
| Title |
Multilayer MoS2 growth by metal and metal oxide sulfurization |
Type |
A1 Journal article |
| Year |
2016 |
Publication |
Journal of materials chemistry C : materials for optical and electronic devices |
Abbreviated Journal |
J Mater Chem C |
| Volume |
4 |
Issue |
4 |
Pages |
1295-1304 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
We investigated the deposition of MoS2 multilayers on large area substrates. The pre-deposition of metal or metal oxide with subsequent sulfurization is a promising technique to achieve layered films. We distinguish a different reaction behavior in metal oxide and metallic films and investigate the effect of the temperature, the H2S/H-2 gas mixture composition, and the role of the underlying substrate on the material quality. The results of the experiments suggest a MoS2 growth mechanism consisting of two subsequent process steps. At first, the reaction of the sulfur precursor with the metal or metal oxide occurs, requiring higher temperatures in the case of metallic film compared to metal oxide. At this stage, the basal planes assemble towards the diffusion direction of the reaction educts and products. After the sulfurization reaction, the material recrystallizes and the basal planes rearrange parallel to the substrate to minimize the surface energy. Therefore, substrates with low roughness show basal plane assembly parallel to the substrate. These results indicate that the substrate character has a significant impact on the assembly of low dimensional MoS2 films. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Wos |
000370723300020 |
Publication Date |
2016-01-05 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
2050-7526; 2050-7534 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
5.256 |
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 5.256 |
| Call Number |
UA @ lucian @ c:irua:132327 |
Serial |
4211 |
| Permanent link to this record |
| |
|
| |
| Author |
Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
| Title |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
Type |
A1 Journal article |
| Year |
2013 |
Publication |
ECS solid state letters |
Abbreviated Journal |
Ecs Solid State Lett |
| Volume |
2 |
Issue |
11 |
Pages |
P104-P106 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
Electrochemical society |
Place of Publication |
Pennington (N.J.) |
Editor |
|
| Language |
|
Wos |
000324582600006 |
Publication Date |
2013-09-06 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
2162-8742;2162-8750; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.184 |
Times cited |
12 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.184; 2013 IF: 0.781 |
| Call Number |
UA @ lucian @ c:irua:111208 |
Serial |
1070 |
| Permanent link to this record |
| |
|
| |
| Author |
Ignatova, V.A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R. |
| Title |
Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation |
Type |
A1 Journal article |
| Year |
2005 |
Publication |
Applied physics A : materials science & processing |
Abbreviated Journal |
Appl Phys A-Mater |
| Volume |
81 |
Issue |
1 |
Pages |
71-77 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Heidelberg |
Editor |
|
| Language |
|
Wos |
000228794000013 |
Publication Date |
2005-04-11 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0947-8396;1432-0630; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.455 |
Times cited |
4 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.455; 2005 IF: 1.990 |
| Call Number |
UA @ lucian @ c:irua:60085 |
Serial |
1711 |
| Permanent link to this record |
| |
|
| |
| Author |
Ignatova, V.A.; Conard, T.; Möller, W.; Vandervorst, W.; Gijbels, R. |
| Title |
Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study |
Type |
A1 Journal article |
| Year |
2004 |
Publication |
Applied surface science |
Abbreviated Journal |
Appl Surf Sci |
| Volume |
231/232 |
Issue |
|
Pages |
603-608 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
This study is dedicated to a better understanding of the processes occurring under ion bombardment of ultra-thin ZrO2/SiO2/Si gate dielectric stacks. Complex-shaped depth profiles were obtained by using TOF-SIMS with dual beam (500 eV for sputtering and 10 keV for analysis) Ar+ ions. The SIMS intensities of all the elements depend critically on the amount of oxygen at any moment of the sputtering process. Increased intensity is observed at the surface and at the ZrO2/SiO2 interface. A long tail of the Zr signal is present in the Si substrate, even after the second (SiO2/Si) interface, and a double bump structure in the Zr-90 and ZrO dimer is observed, which is more pronounced with increasing thickness of the interfacial SiO2 layer. Computer simulations using the dynamic Monte Carlo code (TRIDYN) are performed in order to distinguish the ion bombardment-induced effects from changes in the ionization degree. The original code is extended with simple models for the ionization mechanism and for the molecular yield during sputtering. Oxygen preferential sputtering at the surface and ballistic transport of Zr towards and through the interface are clearly demonstrated, but there is also evidence that due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. (C) 2004 Elsevier B.V. All rights reserved. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
000222427700118 |
Publication Date |
2004-05-30 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.387 |
Times cited |
4 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.387; 2004 IF: 1.497 |
| Call Number |
UA @ lucian @ c:irua:51976 |
Serial |
651 |
| Permanent link to this record |
| |
|
| |
| Author |
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
| Title |
Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks |
Type |
A1 Journal article |
| Year |
2003 |
Publication |
Applied surface science |
Abbreviated Journal |
Appl Surf Sci |
| Volume |
203 |
Issue |
|
Pages |
523-526 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
000180527300119 |
Publication Date |
2002-12-30 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.387 |
Times cited |
15 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.387; 2003 IF: 1.284 |
| Call Number |
UA @ lucian @ c:irua:51975 |
Serial |
1743 |
| Permanent link to this record |
| |
|
| |
| Author |
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
| Title |
SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding |
Type |
A1 Journal article |
| Year |
2000 |
Publication |
Surface and interface analysis |
Abbreviated Journal |
Surf Interface Anal |
| Volume |
29 |
Issue |
|
Pages |
761-765 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
London |
Editor |
|
| Language |
|
Wos |
000165476500006 |
Publication Date |
2002-08-25 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0142-2421;1096-9918; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.132 |
Times cited |
4 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.132; 2000 IF: 1.215 |
| Call Number |
UA @ lucian @ c:irua:34072 |
Serial |
3007 |
| Permanent link to this record |
| |
|
| |
| Author |
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
| Title |
Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces |
Type |
A1 Journal article |
| Year |
2000 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
| Volume |
147 |
Issue |
5 |
Pages |
13-17 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
| Language |
|
Wos |
000087075200052 |
Publication Date |
2002-07-28 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0013-4651; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.259 |
Times cited |
14 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.259; 2000 IF: 2.293 |
| Call Number |
UA @ lucian @ c:irua:34073 |
Serial |
1089 |
| Permanent link to this record |
| |
|
| |
| Author |
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
| Title |
Interaction of a Ti-capped Co thin film with Si3N4 |
Type |
A1 Journal article |
| Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
| Volume |
77 |
Issue |
26 |
Pages |
4307-4309 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7]. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| Language |
|
Wos |
000166120500021 |
Publication Date |
2002-07-26 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.411 |
Times cited |
3 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
| Call Number |
UA @ lucian @ c:irua:104225 |
Serial |
1683 |
| Permanent link to this record |
| |
|
| |
| Author |
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
| Title |
Study of oxynitrides with dual beam TOF-SIMS |
Type |
P3 Proceeding |
| Year |
2000 |
Publication |
|
Abbreviated Journal |
|
| Volume |
|
Issue |
|
Pages |
611-614 |
| Keywords |
P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| Impact Factor |
|
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:34082 |
Serial |
3330 |
| Permanent link to this record |
| |
|
| |
| Author |
de Witte, H.; Conard, T.; Sporken, R.; Gouttebaron, R.; Magnee, R.; Vandervorst, W.; Caudano, R.; Gijbels, R. |
| Title |
XPS study of ion induced oxidation of silicon with and without oxygen flooding |
Type |
P3 Proceeding |
| Year |
2000 |
Publication |
|
Abbreviated Journal |
|
| Volume |
|
Issue |
|
Pages |
73-76 |
| Keywords |
P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| Impact Factor |
|
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:34079 |
Serial |
3927 |
| Permanent link to this record |
| |
|
| |
| Author |
Conard, T.; de Witte, H.; Loo, R.; Verheyen, P.; Vandervorst, W.; Caymax, M.; Gijbels, R. |
| Title |
XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers |
Type |
A1 Journal article |
| Year |
1999 |
Publication |
Thin solid films : an international journal on the science and technology of thin and thick films |
Abbreviated Journal |
Thin Solid Films |
| Volume |
343/344 |
Issue |
|
Pages |
583-586 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Amsterdam : Elsevier |
Editor |
|
| Language |
|
Wos |
000081103100149 |
Publication Date |
2002-07-26 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0040-6090; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.879 |
Times cited |
1 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.879; 1999 IF: 1.101 |
| Call Number |
UA @ lucian @ c:irua:24934 |
Serial |
3926 |
| Permanent link to this record |
| |
|
| |
| Author |
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
| Title |
Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution |
Type |
H1 Book chapter |
| Year |
1999 |
Publication |
|
Abbreviated Journal |
|
| Volume |
|
Issue |
|
Pages |
147-159 |
| Keywords |
H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
s.n. |
Place of Publication |
Leuven |
Editor |
|
| Language |
|
Wos |
000082287600013 |
Publication Date |
0000-00-00 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| Impact Factor |
|
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:28333 |
Serial |
275 |
| Permanent link to this record |
